Search Results (29)

In this study, structural optimization and trap effect analysis of a 4H-SiC–based p–i–n betavoltaic (BV) cell were performed using Silvaco ATLAS TCAD (version 5.30.0.R) simulations combined with an electron-beam (e-beam) irradiation model. First, the optimum device structure was derived by varying the thickness of the intrinsic layer (i-layer), the thickness of the p-layer, and the doping concentration of the i-layer. Under 17 keV e-beam irradiation, the electron–hole pairs generated in the i-layer were effectively separated and transported by the internal electric field, thereby contributing to the short-circuit current density (J_SC), open-circuit voltage (V_OC), and maximum output power density (P_{out_max}). Subsequently, to investigate the effects of traps, donor- and acceptor-like traps were introduced either individually or simultaneously, and their densities were varied to evaluate the changes in device performance. The simulation results revealed that traps degraded the performance through charge capture and recombination, with acceptor-like traps exhibiting the most pronounced impact. In particular, acceptor-like traps in the i-layer significantly reduced V_OC from 2.47 V to 2.07 V and P_{out_max} from 3.08 μW/cm² to 2.28 μW/cm², demonstrating that the i-layer is the most sensitive region to performance degradation. These findings indicate that effective control of trap states within the i-layer is a critical factor for realizing high-efficiency and high-reliability SiC-based betavoltaic cells. Full article

NO₂ is a toxic gas mainly generated by combustion processes, such as vehicle emissions and industrial activities. It is a key contributor to smog, acid rain, ground-level ozone, and particulate matter, all of which pose serious risks to human health and the environment. Conventional resistive gas sensors, typically based on metal oxide semiconductors, detect NO₂ by resistance modulation through surface interactions with the gas. However, they often suffer from low responsiveness and poor selectivity. This study investigates NO₂ detection using nanoporous zinc oxide thin films integrated into a resistor structure and floating-gate field-effect transistor (FGFET). Both Silvaco-Atlas simulations and experimental fabrication were employed to evaluate sensor behavior under NO₂ exposure. The results show that FGFET provides higher sensitivity, faster response times, and improved selectivity compared to resistor-based devices. In particular, FGFET achieves a detection limit as low as 89 ppb, with optimal performance around 400 °C, and maintains stability under varying humidity levels. The enhanced performance arises from quantum well effects at the floating-gate Schottky contact, combined with NO₂ adsorption on the ZnO surface. These interactions extend the depletion region and confine charge carriers, amplifying conductivity modulation in the channel. Overall, the findings demonstrate that FGFET is a promising platform for NO₂ sensors, with strong potential for environmental monitoring and industrial safety applications. Full article

This work presents a novel Gallium Nitride (GaN) high-electron-mobility transistor (HEMT)-based ultraviolet (UV) photodetector architecture that integrates advanced material and structural design strategies to enhance detection performance and stability under room-temperature operation. This study is conducted as a fully numerical simulation using the Silvaco Atlas platform, providing detailed electrothermal and optoelectronic analysis of the proposed device. The device is constructed on a high-thermal-conductivity silicon carbide (SiC) substrate and incorporates an n-GaN buffer, an indium nitride (InN) channel layer for improved electron mobility and two-dimensional electron gas (2DEG) confinement, and a dual-passivation scheme combining silicon nitride (SiN) and hexagonal boron nitride (h-BN). A p-GaN layer is embedded between the passivation interfaces to deplete the 2DEG in dark conditions. In the device architecture, the metal contacts consist of a 2 nm Nickel (Ni) adhesion layer followed by Gold (Au), employed as source and drain electrodes, while a recessed gate embedded within the substrate ensures improved electric field control and effective noise suppression. Numerical simulations demonstrate that the integration of a hexagonal boron nitride (h-BN) interlayer within the dual passivation stack effectively suppresses the gate leakage current from the typical literature values of the order of ${10}^{-8}$ A to approximately ${10}^{-10}$ A, highlighting its critical role in enhancing interfacial insulation. In addition, consistent with previous reports, the use of a SiC substrate offers significantly improved thermal management over sapphire, enabling more stable operation under UV illumination. The device demonstrates strong photoresponse under 360 nm ultraviolet (UV) illumination, a high photo-to-dark current ratio (PDCR) found at approximately ${10}^6$, and tunable performance via structural optimization of p-GaN width between 0.40 μm and 1.60 μm, doping concentration from $5\times {10}^{16}$ ${\mathrm{cm}}^{-3}$ to $5\times {10}^{18}$ ${\mathrm{cm}}^{-3}$, and embedding depth between 0.060 μm and 0.068 μm. The results underscore the proposed structure’s notable effectiveness in passivation quality, suppression of gate leakage, and thermal management, collectively establishing it as a robust and reliable platform for next-generation UV photodetectors operating under harsh environmental conditions. Full article

Intermediate-band photovoltaics promise single-junction efficiencies that exceed the Shockley and Queisser limit, yet viable material platforms and device geometries remain under debate. Here, we perform comprehensive two-dimensional device-scale simulations using Silvaco Atlas TCAD to analyze p-i-n In_0.20Ga_0.80N solar cells in which the intermediate band is supplied by In_0.35Ga_0.65N quantum dots located inside the intrinsic layer. Quantum-dot diameters from 1 nm to 10 nm and areal densities up to 116 dots per period are evaluated under AM 1.5G, one-sun illumination at 300 K. The baseline pn junction achieves a simulated power-conversion efficiency of 33.9%. The incorporation of a single 1 nm quantum-dot layer dramatically increases efficiency to 48.1%, driven by a 35% enhancement in short-circuit current density while maintaining open-circuit voltage stability. Further increases in dot density continue to boost current but with diminishing benefit; the highest efficiency recorded, 49.4% at 116 dots, is only 1.4 percentage points above the 40-dot configuration. The improvements originate from two-step sub-band-gap absorption mediated by the quantum dots and from enhanced carrier collection in a widened depletion region. These results define a practical design window centred on approximately 1 nm dots and about 40 dots per period, balancing substantial efficiency gains with manageable structural complexity and providing concrete targets for epitaxial implementation. Full article

We propose a novel ultraviolet (UV) phototransistor (PT) architecture based on an AlGaN/GaN high electron mobility transistor (HEMT) with a buried p-GaN layer. In the dark, the polarization-induced two-dimensional electron gas (2DEG) at the AlGaN/GaN heterojunction interface is depleted by the buried p-GaN and the conduction channel is closed. Under UV illumination, the depletion region shrinks to just beneath the AlGaN/GaN interface and the 2DEG recovers. The retraction distance of the depletion region during device turn-on operation is comparable to the thickness of the AlGaN barrier layer, which is an order of magnitude smaller than that in the conventional p-GaN/AlGaN/GaN PT, whose retraction distance spans the entire GaN channel layer. Consequently, the proposed device demonstrates significantly enhanced weak-light detection capability and improved switching speed. Silvaco Atlas simulations reveal that under a weak UV intensity of 100 nW/cm², the proposed device achieves a photocurrent density of 1.68 × 10⁻³ mA/mm, responsivity of 8.41 × 10⁵ A/W, photo-to-dark-current ratio of 2.0 × 10⁸, UV-to-visible rejection ratio exceeding 10⁸, detectivity above 1 × 10¹⁹ cm·Hz^1/2/W, and response time of 0.41/0.41 ns. The electron concentration distributions, conduction band variations, and 2DEG recovery behaviors in both the conventional and novel structures under dark and weak UV illumination are investigated in depth via simulations. Full article

Synthesis and characterization of undoped and samarium-doped CuO–SnO₂:F thin films using the spray pyrolysis technique are presented. The effect of the samarium doping level on the physical properties of these films was thoroughly analyzed. X-ray diffraction patterns proved the successful synthesis of pure CuO–SnO₂:F thin films, free from detectable impurities. The smallest crystallite size was observed in 6% Sm-doped CuO–SnO₂:F thin films. The 6% Sm-doped CuO–SnO₂films demonstrated an increasedsurface area of 40.6 m²/g, highlighting improved textural properties, which was further validated by XPS analysis.The bandgap energy was found to increase from 1.90 eV for undoped CuO–SnO₂:F to 2.52 eV for 4% Sm-doped CuO–SnO₂:F, before decreasing to 2.03 eV for 6% Sm-doped CuO–SnO2:F thin films. Photoluminescence spectra revealed various emission peaks, suggesting a quenching effect. A numerical simulation of a new solar cell based on FTO/ZnO/Sm–CuO–SnO₂:F/X/Mo was carried out using Silvaco Atlas software, where X represented the absorber layer CIGS, CdTe, and CZTS. The results showed that the solar cell with CIGS as the absorber layer achieved the highest efficiency of 15.98. Additionally, the thin films demonstrated strong photocatalytic performance, with 6% Sm-doped CuO–SnO₂:F showing 86% degradation of ampicillin after two hours. This comprehensive investigation provided valuable insights into the synthesis, properties, and potential applications of Sm-doped CuO–SnO₂ thin films, particularly for solar energy and pharmaceutical applications. Full article

With the advancement of the semiconductor industry into the sub-10 nm regime, high-performance, low-energy transistors have become important, and gate-all-around junctionless field-effect transistors (GAA-JLFETs) have been developed to meet the demands. Silicon (Si) is still the dominant semiconductor material, but other potential alternatives, such as gallium arsenide (GaAs), provide much higher electron mobility, improving the drive current and switching speed. In this study, our contributions include a comparative analysis of Si and GaAs-based cylindrical GAA-JLFETs, using threshold voltage behavior, electrostatic control, short channel effects, subthreshold slope, drain-induced barrier lowering, and leakage current as the metrics for performance evaluation. A comprehensive analytical modeling approach is employed, solving Poisson’s equation and utilizing numerical simulations to assess device characteristics using the ATLAS SILVACO tool under varying channel lengths and gate biases. Comparisons between Si and GaAs-based devices show what trade-offs exist and what the material engineering strategies are to use the advantages of GaAs while minimizing some disadvantages. The results of the study are a valuable contribution to the design and optimization of next-generation FET architectures, pointing the direction for enabling next-generation beyond CMOS technology. Full article

In this work, floating-gate organic field-effect transistor memory using the n-type semiconductor poly-{[N,N′-bis(2-octyldodecyl) naphthalene-1,4,5,8-bis (dicarbo- ximide)-2,6-dili]-alt-5,5′-(2,2′-bithiophene)} (N2200) as a charge-trapping layer is presented. With the assistance of a technology computer-aided design (TCAD) tool (Silvaco-Atlas), the storage characteristics of the device are numerically simulated by using the carrier injection and Fower–Nordheim (FN) tunneling models. The shift in the transfer characteristic curves and the charge-trapping mechanism after programming/erasing (P/E) operations under different P/E voltages and different pulse operation times are discussed. The impacts of different thicknesses of the tunneling layer on storage characteristics are also analyzed. The results show that the memory window with a tunneling layer thickness of 8 nm is 16.1 V under the P/E voltage of ±45 V, 5 s. After 1000 cycle tests, the memory shows good fatigue resistance, and the read current on/off ratio reaches 10³. Full article

This study proposes an AlGaN/GaN current aperture vertical electron transistor (CAVET) featuring a double superjunction (SJ) to enhance breakdown voltage (BV) and investigates its electrical characteristics via technology computer-aided design (TCAD) Silvaco Atlas simulation. An additional p-pillar was formed beneath the gate current blocking layer to create a lateral depletion region that provided a high off-state breakdown voltage. To address the tradeoff between the drain current and off-state breakdown voltage, the key design parameters were carefully optimized. The proposed device exhibited a higher off-state breakdown voltage (2933 V) than the device with a single SJ (2786 V), although the specific on-resistance of the proposed method (1.29 mΩ·cm⁻²) was slightly higher than that of the single SJ device (1.17 mΩ·cm⁻²). In addition, the reverse transfer capacitance was improved by 15.6% in the proposed device. Full article

Historically, multi-junction solar cells have evolved to capture a broader spectrum of sunlight, significantly enhancing efficiency beyond conventional solar technologies. In this study, we utilized Silvaco TCAD tools to optimize a five-junction solar cell composed of AlInP, AlGaInP, AlGaInAs, GaInP, GaAs, InGaAs, and Ge, drawing on advancements documented in the literature. Our research focused on optimizing these cells through sophisticated statistical modeling and material innovation, particularly examining the relationship between layer thickness and electrical yield under one sun illumination. Employing III-V tandem solar cells, renowned for their superior efficiency in converting sunlight to electricity, we applied advanced statistical models to a reference solar cell configured with predefined layer thicknesses. Our analysis revealed significant positive correlations between layer thickness and electrical performance, with correlation coefficients (R² values) impressively ranging from 0.86 to 0.96 across different regions. This detailed statistical insight led to an improvement in overall cell efficiency to 44.2. A key innovation in our approach was replacing the traditional germanium (Ge) substrate with Copper Indium Gallium Selenide (CIGS), known for its adjustable bandgap and superior absorption of long-wavelength photons. This strategic modification not only broadened the absorption spectrum but also elevated the overall cell efficiency to 47%. Additionally, the optimization process involved simulations using predictive profilers and Silvaco Atlas tools, which systematically assessed various configurations for their spectral absorption and current–voltage characteristics, further enhancing the cell’s performance. These findings underscore the critical role of precise material engineering and sophisticated statistical analyses in advancing solar cell technology, setting new efficiency benchmarks, and driving further developments in the field. Full article

This paper investigates the behavior of SiC MOSFETs body diode reverse recovery as a function of different operating conditions. The knowledge of their effects is crucial to properly designing and driving power converters based on SiC devices, in order to optimize the MOSFETs commutations aiming at improving efficiency. Indeed, reverse recovery is a part of the switching transient, but it has a significant role due to its impact on recovery energy and charge. The set of different operating conditions has been properly chosen to prevent or force the snappy recovery of the device under testing. The experimental results and specific software simulations have revealed phenomena unknown in the literature. More specifically, the analysis of the reverse recovery charge, Q_rr, revealed two unexpected phenomena at high temperatures: it decreased with increasing gate voltage; the higher the device threshold, the higher the Q_rr. TCAD-Silvaco (ATLAS v. 5.29.0.C) simulations have shown that this is due to a displacement current flowing in the drift region due to the output capacitance voltage variation during commutation. From the analysis of the snappy recovery, it has emerged that there is a minimum forward current slope, below which the reverse recovery cannot be snappy, even for a high current level. Once this current slope is reached, Q_rr varies with the forward current only. Full article

This paper examines advances in ultra-high concentration photovoltaics (UHCPV), focusing specifically on vertical multijunction (VMJ) solar cells. The use of gallium arsenide (GaAs) in these cells increases their efficiency in a range of applications, including terrestrial and space settings. Several multijunction structures are designed to maximize conversion efficiency, including a vertical tunnel junction, which minimizes resistive losses at high concentration levels compared with standard designs. Therefore, careful optimization of interconnect layers in terms of thickness and doping concentration is needed. Homo-multijunction GaAs solar cells have been simulated and analyzed by using ATLAS Silvaco 5.36 R, a sophisticated technology computer-aided design (TCAD) tool aimed to ensure the reliability of simulation by targeting a high conversion efficiency and a good fill factor for our proposed structure model. Several design parameters, such as the dimensional cell structure, doping density, and sun concentrations, have been analyzed to improve device performance under direct air mass conditions AM1.5D. The optimized conversion efficiency of 30.2% has been achieved with investigated GaAs solar cell configuration at maximum concentration levels. Full article

In this paper, in order to address the problem of electron leakage in AlGaN ultra-violet light-emitting diodes, we have proposed an electron-blocking free layer AlGaN ultra-violet (UV) light-emitting diode (LED) using polarization-engineered heart-shaped AlGaN quantum barriers (QB) instead of conventional barriers. This novel structure has decreased the downward band bending at the interconnection between the consecutive quantum barriers and also flattened the electrostatic field. The parameters used during simulation are extracted from the referred experimental data of conventional UV LED. Using the Silvaco Atlas TCAD tool; version 8.18.1.R, we have compared and optimized the optical as well as electrical characteristics of three varying LED structures. Enhancements in electroluminescence at 275 nm (52.7%), optical output power (50.4%), and efficiency (61.3%) are recorded for an EBL-free AlGaN UV LED with heart-shaped Al composition in the barriers. These improvements are attributed to the minimized non-radiative recombination on the surfaces, due to the progressively increasing effective conduction band barrier height, which subsequently enhances the carrier confinement. Hence, the proposed EBL-free AlGaN LED is the potential solution to enhance optical power and produce highly efficient UV emitters. Full article

In this work, 1 eV Ga_0.7In_0.3As inverted metamorphic (IMM) solar cells were analyzed to achieve a deeper understanding of the mechanism limiting their improvement. For this purpose, high-resolution X-ray diffraction (HRXRD), transmission electron microscopy (TEM), high-resolution cross-sectional cathodoluminescence (CL), and transient in situ surface reflectance were carried out. Additionally, the photovoltaic responses of the complete devices were measured using the external quantum efficiency (EQE) and numerically simulated through Silvaco TCAD ATLAS. The combination of structural characterization of the semiconductor layers and measurements of the solar cell photovoltaic behavior, together with device modeling, allows us to conclude that the lifetime of the bulk minority carriers is the limiting factor influencing the PV response since the recombination at the interfaces (GaInP window–GaInAs emitter and GaInAs base–GaInP back surface field (BSF)) does not impact the carrier recombination due to the favorable alignment between the conduction and the valance bands. The advanced characterization using cross-sectional cathodoluminescence, together with transient in situ surface reflectance, allowed the rejection of the formation of traps related to the GaInAs growth conditions as being responsible for the decrement in the minority-carrier lifetime. Conversely, the TEM and HRXRD revealed that the presence of misfit dislocations in the GaInAs layer linked to strain relaxation, which were probably formed due to an excessive tensile strain in the virtual substrate or an incorrect combination of alloy compositions in the topmost layers, was the dominant factor influencing the GaInAs layer’s quality. These results allow an understanding of the contributions of each characterization technique in the analysis of multi-junction solar cells. Full article

A Schottky barrier high-electron-mobility avalanche transit time (HEM-ATT) structure is proposed for terahertz (THz) wave generation. The structure is laterally oriented and based on AlGaN/GaN two-dimensional electron gas (2-DEG). Trenches are introduced at different positions of the top AlGaN barrier layer for realizing different sheet carrier density profiles at the 2-DEG channel; the resulting devices are equivalent to high–low, low–high and low-high–low quasi-Read structures. The DC, large-signal and noise simulations of the HEM-ATTs were carried out using the Silvaco ATLAS platform, non-sinusoidal-voltage-excited large-signal and double-iterative field-maximum small-signal simulation models, respectively. The breakdown voltages of the devices estimated via simulation were validated by using experimental measurements; they were found to be around 17–18 V. Under large-signal conditions, the series resistance of the device is estimated to be around 20 Ω. The large-signal simulation shows that the HEM-ATT source is capable of delivering nearly 300 mW of continuous-wave peak power with 11% conversion efficiency at 1.0 THz, which is a significant improvement over the achievable THz power output and efficiency from the conventional vertical GaN double-drift region (DDR) IMPATT THz source. The noise performance of the THz source was found to be significantly improved by using the quasi-Read HEM-ATT structures compared to the conventional vertical Schottky barrier IMPATT structure. These devices are compatible with the state-of-the-art medium-scale semiconductor device fabrication processes, with scope for further miniaturization, and may have significant potential for application in compact biomedical spectroscopy systems as THz solid-state sources. Full article