Search Results (887)

Thermal oxidative aging failure of high-temperature vulcanized silicone rubber (HTV) in high-voltage insulators is the core hidden danger of power grid security. In this study, terahertz time domain spectroscopy (THz-TDS) and attenuated total reflection infrared spectroscopy (ATR-FTIR) were combined to reveal the quantitative structure–activity relationship between dielectric response and chemical group evolution of HTV during accelerated aging at 200 °C for 80 days. In this study, HTV flat samples were made in the laboratory, and the dielectric spectrum of HTV in the range of 0.1 THz to 0.4 THz was extracted by a terahertz time–domain spectrum platform. ATR-FTIR was used to analyze the functional group change trend of HTV during aging, and the three-stage evolution of the dielectric real part (0.16 THz), the dynamics of the carbonyl group, the monotonic rise of the dielectric imaginary part (0.17 THz), and the linear response of silicon-oxygen bond breaking were obtained by combining the double Debye relaxation theory. Finally, three aging stages of HTV were characterized by dielectric loss angle data. The model can warn about the critical point of early oxidation and main chain fracture and identify the risk of insulation failure in advance compared with traditional methods. This study provides a multi-scale physical basis for nondestructive life assessment in a silicon rubber insulator. Full article

In this paper, we investigate the zero-temperature coefficient (ZTC) characteristics of polycrystalline silicon (poly-Si) single-gate transistors with a silicon-on-insulator (SOI)-like structure, which offers thermal stability over a wide temperature range. While ZTC characteristics have been primarily utilized in analog and memory circuits, systematic analyses for logic transistors remain limited. The ZTC characteristic is quantitatively evaluated by considering various process parameters, including high-density three-dimensional (3D)-stacked structures. The effects of grain boundary (GB) location within the poly-Si, body thickness, and doping concentration on both the ZTC point and its temperature sensitivity are systematically analyzed. A new metric, ΔZTC, is defined to quantify the sensitivity of the ZTC point to the presence or absence of GBs. This metric is applied throughout the analysis. As a result, ZTC characteristics can be effectively optimized through structural parameter adjustment, and these characteristics are maintained or even enhanced when extended to multi-layer architectures. Notably, when GBs are confined to specific layers, the ΔZTC value is reduced by approximately 64.1% at a body thickness of 25 nm and by 62.5% at 7 nm, compared to the single-layer structure, indicating that temperature sensitivity can be significantly suppressed. Full article

In this work, we investigate the electrical properties of a metal–insulator–semiconductor (MIS) heterojunction based on porous silicon dioxide (Ag/pSiO₂/Si). The porous silicon (PS) films were elaborated by electrochemical anodization under specific experimental conditions to obtain a porosity of about 55%. Porous silicon (PS) was oxidized by IR-RTP at different oxidation temperatures (Tox) ranging from 200 to 950 °C under an oxygen atmosphere. The morphology of the samples was analyzed using a scanning electron microscope (SEM). Ag/Al and Ag contacts were screen printed on the back and front sides of the heterojunction, respectively. Both the series and shunt resistances were derived from dark current–voltage (I–V) characteristics related to the various Ag/pSiO₂/Si heterojunctions. In this context, the reflectance was also measured at different oxidation temperatures to investigate its correlation with the series resistance (Rs) and shunt resistance (Rsh). The optimum electrical performance was obtained for an oxidation temperature close to 400 °C. Depending on the pSiO₂ thickness, two conduction mechanisms were highlighted within the devices. For a Tox below 200 °C, as well as for the non-oxidized devices, the conduction mechanism is governed by the tunneling current through the pSiO₂ film. However, when the Tox increases and exceeds 200 °C, the pSiO₂ thickness increases, leading to the switching of the conduction mechanism to a thermionic instead of a tunneling effect mechanism. Full article

Resistive switching (RS) phenomena are nowadays one of the most studied topics in the area of microelectronics. It can be observed in Metal–Insulator–Metal (MIM) structures that are the basis of resistive switching random-access memories (RRAMs). In the case of commercial use of RRAMs, it is beneficial that the applied materials would have to be compatible with Complementary Metal-Oxide-Semiconductor (CMOS) technology. Fabricating methods of these materials can determine their stoichiometry and structural composition, which can have a detrimental impact on the electrical performance of manufactured devices. In this study, we present the influence of the Ar/N₂ ratio during reactive magnetron sputtering of titanium nitride (TiN) electrodes on the resistive switching behavior of MIM devices. We used silicon oxide (SiOx) as a dielectric layer, which was characterized by the same properties in all fabricated MIM structures. The composition of TiN thin layers was controlled by tuning the Ar/N₂ ratio during the deposition process. The fabricated conductive materials were characterized in terms of chemical and structural properties employing X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) analysis. Structural characterization revealed that increasing the Ar content during the reactive sputtering process affects the crystallite size of the deposited TiN layer. The resulting crystallite sizes ranged from 8 Å to 757.4 Å. The I-V measurements of fabricated devices revealed that tuning the Ar/N₂ ratio during the deposition of TiN electrodes affects the RS behavior. Our work shows the importance of controlling the stoichiometry and structural parameters of electrodes on resistive switching phenomena. Full article

In this study, tin oxide (SnO₂) resistive random-access memory (RRAM) thin films were fabricated using the thermal evaporation and radiofrequency and dc frequency sputtering techniques for metal–insulator–metal (MIM) structures. The fabrication process began with the deposition of a silicon dioxide (SiO₂) layer onto a silicon (Si) substrate, followed by the deposition of a titanium nitride (TiN) layer to serve as the bottom electrode. Subsequently, the tin oxide (SnO₂) layer was deposited as the resistive switching insulator. Two types of top electrodes were developed to investigate the influence of different oxygen concentrations on the bipolar switching, electrical characteristics, and performance of memory devices. An aluminum (Al) top electrode was deposited using thermal evaporation, while a platinum (Pt) top electrode was deposited via dc sputtering. As a result, two distinct metal–insulator–metal (MIM) memory RRAM device structures were formed, i.e., Al/SnO₂/TiN/SiO₂/Si and Pt/SnO₂/TiN/SiO₂/Si. In addition, the symmetry bipolar switching characteristics, electrical conduction mechanism, and oxygen concentration factor of the tin oxide-based memory devices using rapid thermal annealing and different top electrodes were determined and investigated by ohmic, space-charge-limit-current, Schottky, and Poole–Frenkel conduction equations in this study. Full article

The development of compact, CMOS-compatible gas sensors is critical for advancing real-time environmental monitoring and industrial diagnostics. In this study, we present a detailed numerical investigation of integrated photonic waveguide designs—such as ridge and slot—optimized for overtone-based gas spectroscopy in the near-infrared range. By evaluating both the evanescent-field confinement and curvature-induced losses across multiple silicon-on-insulator platforms, we identify optimal geometries that maximize light–analyte interactions while minimizing bending attenuation. Our findings provide essential design guidelines for high-performance, low-footprint gas sensors. Full article

Optical fiber composite insulators are essential for photoelectric current measurement, yet insulation failure at embedded optical fiber interfaces remains a major challenge to long-term stability. This study proposes a strategy to replace conventional silicone rubber with cycloaliphatic-like epoxy resin (CEP) as the shed-sheathing material. Three optical fibers with distinct outer coatings, ethylene-tetrafluoroethylene copolymer (ETFE), thermoplastic polyester elastomer (TPEE), and epoxy acrylate resin (EA), were evaluated for their interfacial compatibility with CEP. ETFE, with low surface energy and weak polarity, exhibited poor wettability with CEP, resulting in an interfacial tensile strength of 0 MPa, pronounced dye penetration, and rapid electrical tree propagation. Its average interfacial breakdown voltage was only 8 kV, and the interfacial leakage current reached 35 μA after hygrothermal aging. In contrast, TPEE exhibited high surface energy and strong polarity, enabling strong bonding with CEP, yielding an average interfacial tensile strength of approximately 46 MPa. Such a strong interface effectively suppressed electrical tree growth, increased the average interfacial breakdown voltage to 27 kV, and maintained the interfacial leakage current below 5 μA even after hygrothermal aging. EA exhibited moderate interfacial performance. Mechanism analysis revealed that polar ester and ether groups in TPEE enhanced interfacial electrostatic interactions, restricted the mobility of CEP molecular chain segments, and increased charge traps. These synergistic effects suppressed interfacial charge transport and improved insulation strength. This work offers valuable insight into structure–property relationships at fiber–resin interfaces and provides a useful reference for the design of composite insulation materials. Full article

This systematic literature review explores recent advancements in polymer-based composite materials designed for thermal insulation in automotive applications, with a particular focus on sustainability, performance optimization, and scalability. The methodology follows PRISMA 2020 guidelines and includes a comprehensive bibliometric and thematic analysis of 229 peer-reviewed articles published over the past 15 years across major databases (Scopus, Web of Science, ScienceDirect, MDPI). The findings are structured around four central research questions addressing (1) the functional role of insulation in automotive systems; (2) criteria for selecting suitable polymer systems; (3) optimization strategies involving nanostructuring, self-healing, and additive manufacturing; and (4) future research directions involving smart polymers, bioinspired architectures, and AI-driven design. Results show that epoxy resins, polyurethane, silicones, and polymeric foams offer distinct advantages depending on the specific application, yet each presents trade-offs between thermal resistance, recyclability, processing complexity, and ecological impact. Comparative evaluation tables and bibliometric mapping (VOSviewer) reveal an emerging research trend toward hybrid systems that combine bio-based matrices with functional nanofillers. The study concludes that no single material system is universally optimal, but rather that tailored solutions integrating performance, sustainability, and cost-effectiveness are essential for next-generation automotive thermal insulation. Full article

Silicene is a two-dimensional silicon monolayer with a band gap caused by relatively strong spin–orbit coupling. This band gap can be steered using a vertical electric field. In turn, the change in this electric field value leads to a transition from a topological insulator to a bulk insulator regime. This study aims to develop a phase-space approach to detecting the topological phase transitions in silicene induced by the presence of parallel magnetic and electric fields with the aid of the concept of topological quantum number based on the Wigner–Rényi entropy. A reinterpreted definition of the Wigner distribution function is employed to determine this indicator. The topological phase transition in silicene as a function of the electric field in the presence of the magnetic field is confirmed through the use of the topological quantum number determined for the one-half, Shannon and collision entropies. Full article

We present a highly sensitive and selective gas sensor based on an advanced silicon-on-insulator tunnel field-effect transistor (SOI-TFET) architecture, enhanced through the integration of customized conducting polymers. In this design, traditional metal gates are replaced with distinct functional polymers—PPP-TOS/AcCN, PP-TOS/AcCN, PP-FE(CN)₆³⁻/H₂O, PPP-TCNQ-TOS/AcCN, and PPP-ClO₄/AcCN—which enable precise molecular recognition and discrimination of various target gases. To further enhance sensitivity, the device employs an oppositely doped source region, significantly improving gate control and promoting stronger band-to-band tunneling. This structural modification amplifies sensing signals and improves noise immunity, allowing reliable detection at trace concentrations. Additionally, optimization of the subthreshold swing contributes to faster switching and response times. Thermal stability is addressed by embedding a P-type buffer layer within the buried oxide, which increases thermal conductivity and reduces lattice temperature, further stabilizing device performance. Experimental results demonstrate that the proposed sensor outperforms conventional SOI-TFET designs, exhibiting superior sensitivity and selectivity toward analytes such as methanol, chloroform, isopropanol, and hexane. Beyond gas sensing, the unique polymer-functionalized gate design enables integration of microbial biosensing capabilities, making the platform highly versatile for biochemical detection. This work offers a promising pathway toward ultra-sensitive, low-power sensing technologies for environmental monitoring, industrial safety, and medical diagnostics. Full article

Experimental and simulation analysis was conducted on the effects of 532 nm nanosecond laser-induced thermal damage on the front-side illuminated CMOS detector. The study examined CMOS detector output images at different stages of damage, including point damage, line damage, and complete failure, and correlated these with microscopic structural changes observed through optical and scanning electron microscopy. A finite element model was used to study the thermal–mechanical coupling effect during laser irradiation. The results indicated that at a laser energy density of 78.9 mJ/cm², localized melting occurs within photosensitive units in the epitaxial layer, manifesting as an irreversible white bright spot appearing in the detector output image (point damage). When the energy density is further increased to 241.9 mJ/cm², metal routings across multiple pixel units melt, resulting in horizontal and vertical black lines in the output image (line damage). Upon reaching 2005.4 mJ/cm², the entire sensor area failed to output any valid image due to thermal stress-induced delamination of the silicon dioxide insulation layer, with cracks propagating to the metal routing and epitaxial layers, ultimately causing structural deformation and device failure (complete failure). Full article

To improve the efficiency and stability of the system, this paper proposes a monolithic integrated optical path design for a cavity optomechanical accelerometer based on a 250 nm top silicon thickness silicon-on-insulator (SOI) wafer instead of readout through U-shape fiber coupling. Finite Element Analysis (FEA) and Finite-Difference Time-Domain (FDTD) methods are employed to systematically investigate the performance of key optical structures, including the resonant modes and bandgap characteristics of photonic crystal (PhC) microcavities, transmission loss of strip waveguides, coupling efficiency of tapered-lensed fiber-to-waveguide end-faces, coupling characteristics between strip waveguides and PhC waveguides, and the coupling mechanism between PhC waveguides and microcavities. Simulation results demonstrate that the designed PhC microcavity achieves a quality factor (Q-factor) of 2.26 × 10⁵ at a 1550 nm wavelength while the optimized strip waveguide exhibits a low loss of merely 0.2 dB over a 5000 μm transmission length. The strip waveguide to PhC waveguide coupling achieves 92% transmittance at the resonant frequency, corresponding to a loss below 0.4 dB. The optimized edge coupling structure exhibits a transmittance of 75.8% (loss < 1.2 dB), with a 30 μm coupling length scheme (60% transmittance, ~2.2 dB loss) ultimately selected based on process feasibility trade-offs. The total optical path system loss (input to output) is 5.4 dB. The paper confirms that the PhC waveguide–microcavity evanescent coupling method can effectively excite the target cavity mode, ensuring optomechanical coupling efficiency for the accelerometer. This research provides theoretical foundations and design guidelines for the fabrication of high-precision monolithic integrated cavity optomechanical accelerometers. Full article

Highly integrable silicon carbide (SiC) has emerged as a promising platform for photonic integrated circuits (PICs), offering a comprehensive set of material and optical properties that are ideal for the integration of nonlinear devices and solid-state quantum defects. However, despite significant progress in nanofabrication technology, the development of SiC on an insulator (SiCOI)-based photonics faces challenges due to fabrication-induced material optical losses and complex processing steps. An alternative approach to mitigate these fabrication challenges is the direct deposition of amorphous SiC on an insulator (a-SiCOI). However, there is a lack of systematic studies aimed at producing high optical quality a-SiC thin films, and correspondingly, on evaluating and determining their optical properties in the telecom range. To this end, we have studied a single-source precursor, 1,3,5-trisilacyclohexane (TSCH, C₃H₁₂Si₃), and chemical vapor deposition (CVD) processes for the deposition of SiC thin films in a low-temperature range (650–800 °C) on a multitude of different substrates. We have successfully demonstrated the fabrication of smooth, uniform, and stoichiometric a-SiCOI thin films of 20 nm to 600 nm with a highly controlled growth rate of ~0.5 Å/s and minimal surface roughness of ~5 Å. Spectroscopic ellipsometry and resonant micro-photoluminescence excitation spectroscopy and mapping reveal a high index of refraction (~2.7) and a minimal absorption coefficient (<200 cm⁻¹) in the telecom C-band, demonstrating the high optical quality of the films. These findings establish a strong foundation for scalable production of high-quality a-SiCOI thin films, enabling their application in advanced chip-scale telecom PIC technologies. Full article

As transistor dimensions continue to scale below 10 nm, traditional MOSFET architectures face increasing limitations from short-channel effects, gate leakage, and variability. FinFETs, especially junctionless FinFETs on silicon-on-insulator (SOI) substrates, offer improved electrostatic control and simplified fabrication, making them attractive for deeply scaled nodes. In this work, we propose a novel Stepped-Spacer Structured FinFET (S³-FinFET) that incorporates a three-layer HfO₂/Si₃N₄/HfO₂ spacer configuration designed to enhance electrostatics and suppress parasitic effects. Using 2D TCAD simulations, the S³-FinFET is evaluated in terms of key performance metrics, including transfer/output characteristics, ON/OFF current ratio, subthreshold swing (SS), drain-induced barrier lowering (DIBL), gate capacitance, and cut-off frequency. The results show significant improvements in leakage control and high-frequency behavior. These enhancements make the S³-FinFET particularly well-suited for Field-Programmable Gate Arrays (FPGAs), where power efficiency, speed, and signal integrity are critical to performance in reconfigurable logic environments. Full article

Nanoparticle floating gate (NPFG) transistors have gained attention as synaptic devices due to their discrete charge storage capability, which minimizes leakage currents and enhances the memory window. In this study, we propose and evaluate a mesh-type floating gate transistor (Mesh-FGT) designed to emulate the characteristics of NPFG transistors. Individual floating gates with dimensions of 3 µm × 3 µm are arranged in an array configuration to form the floating gate structure. The Mesh-FGT is composed of an Al/Pt/Cr/HfO₂/Pt/Cr/HfO₂/SiO₂/SOI (silicon-on-insulator) stack. Threshold voltages (Vth) extracted from the transfer and output curves followed Gaussian distributions with means of 0.063 V (σ = 0.100 V) and 1.810 V (σ = 0.190 V) for the erase (ERS) and program (PGM) states, respectively. Synaptic potentiation and depression were successfully demonstrated in a multi-level implementation by varying the drain current (I_ds) and Vth. The Mesh-FGT exhibited high immunity to leakage current, excellent repeatability and retention, and a stable memory window that initially measured 2.4 V. These findings underscore the potential of the Mesh-FGT as a high-performance neuromorphic device, with promising applications in array device architectures and neuromorphic neural network implementations. Full article