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Search Results (1,406)

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Keywords = Silicon carbide

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16 pages, 2036 KiB  
Article
Scalable Chemical Vapor Deposition of Silicon Carbide Thin Films for Photonic Integrated Circuit Applications
by Souryaya Dutta, Alex Kaloyeros, Animesh Nanaware and Spyros Gallis
Appl. Sci. 2025, 15(15), 8603; https://doi.org/10.3390/app15158603 (registering DOI) - 2 Aug 2025
Viewed by 177
Abstract
Highly integrable silicon carbide (SiC) has emerged as a promising platform for photonic integrated circuits (PICs), offering a comprehensive set of material and optical properties that are ideal for the integration of nonlinear devices and solid-state quantum defects. However, despite significant progress in [...] Read more.
Highly integrable silicon carbide (SiC) has emerged as a promising platform for photonic integrated circuits (PICs), offering a comprehensive set of material and optical properties that are ideal for the integration of nonlinear devices and solid-state quantum defects. However, despite significant progress in nanofabrication technology, the development of SiC on an insulator (SiCOI)-based photonics faces challenges due to fabrication-induced material optical losses and complex processing steps. An alternative approach to mitigate these fabrication challenges is the direct deposition of amorphous SiC on an insulator (a-SiCOI). However, there is a lack of systematic studies aimed at producing high optical quality a-SiC thin films, and correspondingly, on evaluating and determining their optical properties in the telecom range. To this end, we have studied a single-source precursor, 1,3,5-trisilacyclohexane (TSCH, C3H12Si3), and chemical vapor deposition (CVD) processes for the deposition of SiC thin films in a low-temperature range (650–800 °C) on a multitude of different substrates. We have successfully demonstrated the fabrication of smooth, uniform, and stoichiometric a-SiCOI thin films of 20 nm to 600 nm with a highly controlled growth rate of ~0.5 Å/s and minimal surface roughness of ~5 Å. Spectroscopic ellipsometry and resonant micro-photoluminescence excitation spectroscopy and mapping reveal a high index of refraction (~2.7) and a minimal absorption coefficient (<200 cm−1) in the telecom C-band, demonstrating the high optical quality of the films. These findings establish a strong foundation for scalable production of high-quality a-SiCOI thin films, enabling their application in advanced chip-scale telecom PIC technologies. Full article
(This article belongs to the Section Materials Science and Engineering)
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12 pages, 8945 KiB  
Article
Effect of Si Addition on Microstructure and Mechanical Properties of SiC Ceramic Fabricated by Direct LPBF with CVI Technology
by Yipu Wang, Pei Wang, Liqun Li, Jian Zhang, Yulei Zhang, Jin Peng, Xingxing Wang, Nan Kang, Mohamed El Mansori and Konda Gokuldoss Prashanth
Appl. Sci. 2025, 15(15), 8585; https://doi.org/10.3390/app15158585 (registering DOI) - 1 Aug 2025
Viewed by 140
Abstract
In this paper, SiC and Si/SiC ceramics were fabricated using direct laser powder bed fusion with chemical vapor infiltration. Their microstructure, mechanical properties and the impacts of silicon addition were analyzed. The incorporation of silicon led to an increase in the relative density [...] Read more.
In this paper, SiC and Si/SiC ceramics were fabricated using direct laser powder bed fusion with chemical vapor infiltration. Their microstructure, mechanical properties and the impacts of silicon addition were analyzed. The incorporation of silicon led to an increase in the relative density of the silicon carbide ceramics from 76.4% to 78.3% and the compression strength increased from 39 ± 13 MPa to 90 ± 8 MPa after laser powder bed fusion with chemical vapor infiltration. The melting and re-solidification of silicon allows the silicon to encapsulate the silicon carbide grains, changing the microstructure and the failure mechanism of the silicon carbide ceramics, resulting in a small amount of silicon residue. In the LPBF-CVI SiC ceramic specimen, the LPBF-formed SiC exhibits a microhardness of 24.2 ± 1.0 GPa. In LPBF-CVI Si/SiC, the spherical dual-phase structure displays a moderately increased hardness (25.9 ± 4.4 GPa), and the CVI-formed SiC exhibits a hardness of 55.3 ± 9.3 GPa. Full article
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22 pages, 3440 KiB  
Article
Probabilistic Damage Modeling and Thermal Shock Risk Assessment of UHTCMC Thruster Under Transient Green Propulsion Operation
by Prakhar Jindal, Tamim Doozandeh and Jyoti Botchu
Materials 2025, 18(15), 3600; https://doi.org/10.3390/ma18153600 - 31 Jul 2025
Viewed by 189
Abstract
This study presents a simulation-based damage modeling and fatigue risk assessment of a reusable ceramic matrix composite thruster designed for short-duration, green bipropellant propulsion systems. The thruster is constructed from a fiber-reinforced ultra-high temperature ceramic matrix composite composed of zirconium diboride, silicon carbide, [...] Read more.
This study presents a simulation-based damage modeling and fatigue risk assessment of a reusable ceramic matrix composite thruster designed for short-duration, green bipropellant propulsion systems. The thruster is constructed from a fiber-reinforced ultra-high temperature ceramic matrix composite composed of zirconium diboride, silicon carbide, and carbon fibers. Time-resolved thermal and structural simulations are conducted on a validated thruster geometry to characterize the severity of early-stage thermal shock, stress buildup, and potential degradation pathways. Unlike traditional fatigue studies that rely on empirical fatigue constants or Paris-law-based crack-growth models, this work introduces a simulation-derived stress-margin envelope methodology that incorporates ±20% variability in temperature-dependent material strength, offering a physically grounded yet conservative risk estimate. From this, a normalized risk index is derived to evaluate the likelihood of damage initiation in critical regions over the 0–10 s firing window. The results indicate that the convergent throat region experiences a peak thermal gradient rate of approximately 380 K/s, with the normalized thermal shock index exceeding 43. Stress margins in this region collapse by 2.3 s, while margin loss in the flange curvature appears near 8 s. These findings are mapped into green, yellow, and red risk bands to classify operational safety zones. All the results assume no active cooling, representing conservative operating limits. If regenerative or ablative cooling is implemented, these margins would improve significantly. The framework established here enables a transparent, reproducible methodology for evaluating lifetime safety in ceramic propulsion nozzles and serves as a foundational tool for fatigue-resilient component design in green space engines. Full article
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14 pages, 4080 KiB  
Article
High-Compressive-Strength Silicon Carbide Ceramics with Enhanced Mechanical Performance
by Zijun Qian, Kang Li, Yabin Zhou, Hao Xu, Haiyan Qian and Yihua Huang
Materials 2025, 18(15), 3598; https://doi.org/10.3390/ma18153598 - 31 Jul 2025
Viewed by 189
Abstract
This study demonstrates the successful fabrication of high-performance reaction-bonded silicon carbide (RBSC) ceramics through an optimized liquid silicon infiltration (LSI) process employing multi-modal SiC particle gradation and nano-carbon black (0.6 µm) additives. By engineering porous preforms with hierarchical SiC distributions and tailored carbon [...] Read more.
This study demonstrates the successful fabrication of high-performance reaction-bonded silicon carbide (RBSC) ceramics through an optimized liquid silicon infiltration (LSI) process employing multi-modal SiC particle gradation and nano-carbon black (0.6 µm) additives. By engineering porous preforms with hierarchical SiC distributions and tailored carbon sources, the resulting ceramics achieved a compressive strength of 2393 MPa and a flexural strength of 380 MPa, surpassing conventional RBSC systems. Microstructural analyses revealed homogeneous β-SiC formation and crack deflection mechanisms as key contributors to mechanical enhancement. Ultrafine SiC particles (0.5–2 µm) refined pore architectures and mediated capillary dynamics during infiltration, enabling nanoscale dispersion of residual silicon phases and minimizing interfacial defects. Compared to coarse-grained counterparts, the ultrafine SiC system exhibited a 23% increase in compressive strength, attributed to reduced sintering defects and enhanced load transfer efficiency. This work establishes a scalable strategy for designing RBSC ceramics for extreme mechanical environments, bridging material innovation with applications in high-stress structural components. Full article
(This article belongs to the Section Advanced and Functional Ceramics and Glasses)
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22 pages, 5743 KiB  
Article
Effect of Grain Boundary Characteristics on Mechanical Properties and Irradiation Response in 3C-SiC: A Molecular Dynamics Simulation Study
by Wenying Liu, Fugen Deng, Jiajie Yu, Lin Chen, Yuyang Zhou, Yulu Zhou and Yifang Ouyang
Materials 2025, 18(15), 3545; https://doi.org/10.3390/ma18153545 - 29 Jul 2025
Viewed by 218
Abstract
Molecular dynamics (MD) simulations have been performed on the energetics, mechanical properties, and irradiation response of seventy-three 3C-SiC symmetric tilt grain boundaries (STGBs) with three tilt axes (<100>, <110> and <111>). The effect of GB characteristics on the STGB properties has been investigated. [...] Read more.
Molecular dynamics (MD) simulations have been performed on the energetics, mechanical properties, and irradiation response of seventy-three 3C-SiC symmetric tilt grain boundaries (STGBs) with three tilt axes (<100>, <110> and <111>). The effect of GB characteristics on the STGB properties has been investigated. The GB energy is positively and linearly correlated with the excess volume, but the linearity in SiC is not as good as in metals, which stems from the inhomogeneous structural relaxation near GBs induced by orientation-sensitive covalent bonding. For <110>STGBs, the shear strength exhibits symmetry with respect to the misorientation angle of 90°, which is consistent with ab initio calculations for Al in similar shear orientations. Cascades are performed with 8 keV silicon as the primary knock-on atom (PKA). No direct correlation is found between the sink efficiency of GBs for defects and GB characteristics, which comes from the complexity of the diatomic system during the recovery phase. For GBs with smaller values of Σ, the GBs exhibit a weaker blocking effect on the penetration of irradiated defects, resulting in a lower number of defects in GBs and a higher number of total surviving defects. In particular, it is seen that the percentage decrease in tensile strength after irradiation is positively correlated with the Σ value. Taken together, these results help to elucidate the impact of GB behavior on the mechanical properties of as well as the primary irradiation damage in SiC and provide a reference for creating improved materials through GB engineering. Full article
(This article belongs to the Section Materials Simulation and Design)
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23 pages, 3210 KiB  
Article
Design and Optimization of Intelligent High-Altitude Operation Safety System Based on Sensor Fusion
by Bohan Liu, Tao Gong, Tianhua Lei, Yuxin Zhu, Yijun Huang, Kai Tang and Qingsong Zhou
Sensors 2025, 25(15), 4626; https://doi.org/10.3390/s25154626 - 25 Jul 2025
Viewed by 234
Abstract
In the field of high-altitude operations, the frequent occurrence of fall accidents is usually closely related to safety measures such as the incorrect use of safety locks and the wrong installation of safety belts. At present, the manual inspection method cannot achieve real-time [...] Read more.
In the field of high-altitude operations, the frequent occurrence of fall accidents is usually closely related to safety measures such as the incorrect use of safety locks and the wrong installation of safety belts. At present, the manual inspection method cannot achieve real-time monitoring of the safety status of the operators and is prone to serious consequences due to human negligence. This paper designs a new type of high-altitude operation safety device based on the STM32F103 microcontroller. This device integrates ultra-wideband (UWB) ranging technology, thin-film piezoresistive stress sensors, Beidou positioning, intelligent voice alarm, and intelligent safety lock. By fusing five modes, it realizes the functions of safety status detection and precise positioning. It can provide precise geographical coordinate positioning and vertical ground distance for the workers, ensuring the safety and standardization of the operation process. This safety device adopts multi-modal fusion high-altitude operation safety monitoring technology. The UWB module adopts a bidirectional ranging algorithm to achieve centimeter-level ranging accuracy. It can accurately determine dangerous heights of 2 m or more even in non-line-of-sight environments. The vertical ranging upper limit can reach 50 m, which can meet the maintenance height requirements of most transmission and distribution line towers. It uses a silicon carbide MEMS piezoresistive sensor innovatively, which is sensitive to stress detection and resistant to high temperatures and radiation. It builds a Beidou and Bluetooth cooperative positioning system, which can achieve centimeter-level positioning accuracy and an identification accuracy rate of over 99%. It can maintain meter-level positioning accuracy of geographical coordinates in complex environments. The development of this safety device can build a comprehensive and intelligent safety protection barrier for workers engaged in high-altitude operations. Full article
(This article belongs to the Section Electronic Sensors)
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23 pages, 16399 KiB  
Article
Design and Implementation of a Full SiC-Based Phase-Shifted Full-Bridge DC-DC Converter with Nanocrystalline-Cored Magnetics for Railway Battery Charging Applications
by Fatih Enes Gocen, Salih Baris Ozturk, Mehmet Hakan Aksit, Gurkan Dugan, Benay Cakmak and Caner Demir
Energies 2025, 18(15), 3945; https://doi.org/10.3390/en18153945 - 24 Jul 2025
Viewed by 243
Abstract
This paper presents the design and implementation of a high-efficiency, full silicon carbide (SiC)-based center-tapped phase-shifted full-bridge (PSFB) converter for NiCd battery charging applications in railway systems. The converter utilizes SiC MOSFET modules on the primary side and SiC diodes on the secondary [...] Read more.
This paper presents the design and implementation of a high-efficiency, full silicon carbide (SiC)-based center-tapped phase-shifted full-bridge (PSFB) converter for NiCd battery charging applications in railway systems. The converter utilizes SiC MOSFET modules on the primary side and SiC diodes on the secondary side, resulting in significant efficiency improvements due to the superior switching characteristics and high-temperature tolerance inherent in SiC devices. A nanocrystalline-cored center-tapped transformer is optimized to minimize voltage stress on the rectifier diodes. Additionally, the use of a nanocrystalline core provides high saturation flux density, low core loss, and excellent permeability, particularly at high frequencies, which significantly enhances system efficiency. The converter also compensates for temperature fluctuations during operation, enabling a wide and adjustable output voltage range according to the temperature differences. A prototype of the 10-kW, 50-kHz PSFB converter, operating with an input voltage range of 700–750 V and output voltage of 77–138 V, was developed and tested both through simulations and experimentally. The converter achieved a maximum efficiency of 97% and demonstrated a high power density of 2.23 kW/L, thereby validating the effectiveness of the proposed design for railway battery charging applications. Full article
(This article belongs to the Special Issue Advancements in Electromagnetic Technology for Electrical Engineering)
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18 pages, 4119 KiB  
Article
Structural Mechanics Calculations of SiC/Mo-Re Composites with Improved High Temperature Creep Properties
by Ke Li, Egor Kashkarov, Hailiang Ma, Ping Fan, Qiaoli Zhang, Andrey Lider and Daqing Yuan
Materials 2025, 18(15), 3459; https://doi.org/10.3390/ma18153459 - 23 Jul 2025
Viewed by 211
Abstract
In the present work, we design a laminated composite composed of molybdenum–rhenium alloy and silicon carbide ceramics for use in space reactors as a candidate structural material with neutron spectral shift properties. The influence of the internal microstructure on the mechanical properties is [...] Read more.
In the present work, we design a laminated composite composed of molybdenum–rhenium alloy and silicon carbide ceramics for use in space reactors as a candidate structural material with neutron spectral shift properties. The influence of the internal microstructure on the mechanical properties is investigated by finite element simulation based on scale separation. The results of the study showed that the incorporation of gradient transition layers between the metallic and ceramic phases effectively mitigates thermally induced local stresses arising from mismatches in coefficients of thermal expansion. By optimizing the composition of the gradient transition layers, the stress distribution within the composite under operating conditions has been adjusted. As a result, the stress experienced by the alloy phase is significantly reduced, potentially extending the high-temperature creep rupture life. Full article
(This article belongs to the Section Advanced Composites)
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18 pages, 5469 KiB  
Article
Site Application of Thermally Conductive Concrete Pavement: A Comparison of Its Thermal Effectiveness with Normal Concrete Pavement
by Joo-Young Kim and Jae-Suk Ryou
Materials 2025, 18(15), 3444; https://doi.org/10.3390/ma18153444 - 23 Jul 2025
Viewed by 277
Abstract
In this study, the thermal effectiveness of thermally conductive concrete pavements (TCPs) using silicon carbide (SiC) as a fine aggregate replacement was investigated, compared with that of ordinary Portland cement pavements (OPCPs). The most important purpose of this study is to improve the [...] Read more.
In this study, the thermal effectiveness of thermally conductive concrete pavements (TCPs) using silicon carbide (SiC) as a fine aggregate replacement was investigated, compared with that of ordinary Portland cement pavements (OPCPs). The most important purpose of this study is to improve the thermal performance of concrete pavement. Additionally, this study utilized improved thermal properties to enhance the efficiency of pavement heating to prevent icing and snow stacking. Both mixtures met the Korean standards for air content (4.5–6%) and slump (80–150 mm), demonstrating adequate workability. TCP exhibited a higher mechanical performance, with average compressive and flexural strengths of 42.88 MPa and 7.35 MPa, respectively, exceeding the required targets of a 30 MPa compressive strength and a 4.5 MPa flexural strength. The improved strength was mainly attributed to the filler effect and partly due to the van der Waals interactions of the SiC particles. Thermal conductivity tests showed a significant improvement in the TCP (3.20 W/mK), which was approximately twice that of OPCP (1.59 W/mK), indicating an enhanced heat transfer efficiency. In winter field tests, TCP effectively maintained high surface temperatures, overcoming heat loss and outperforming the OPCP. In the site experiment, thermal efficiency was clearly shown in the temperature at the center of the TCP, which was 3.5 °C higher than at the center of the OPCP at the coldest time. These improvements suggest that SiC-reinforced concrete pavements can be practically utilized for effective snow removal and ice mitigation in road systems. Full article
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23 pages, 6645 KiB  
Article
Encapsulation Process and Dynamic Characterization of SiC Half-Bridge Power Module: Electro-Thermal Co-Design and Experimental Validation
by Kaida Cai, Jing Xiao, Xingwei Su, Qiuhui Tang and Huayuan Deng
Micromachines 2025, 16(7), 824; https://doi.org/10.3390/mi16070824 - 19 Jul 2025
Viewed by 432
Abstract
Silicon carbide (SiC) half-bridge power modules are widely utilized in new energy power generation, electric vehicles, and industrial power supplies. To address the research gap in collaborative validation between electro-thermal coupling models and process reliability, this paper proposes a closed-loop methodology of “design-simulation-process-validation”. [...] Read more.
Silicon carbide (SiC) half-bridge power modules are widely utilized in new energy power generation, electric vehicles, and industrial power supplies. To address the research gap in collaborative validation between electro-thermal coupling models and process reliability, this paper proposes a closed-loop methodology of “design-simulation-process-validation”. This approach integrates in-depth electro-thermal simulation (LTspice XVII/COMSOL Multiphysics 6.3) with micro/nano-packaging processes (sintering/bonding). Firstly, a multifunctional double-pulse test board was designed for the dynamic characterization of SiC devices. LTspice simulations revealed the switching characteristics under an 800 V operating condition. Subsequently, a thermal simulation model was constructed in COMSOL to quantify the module junction temperature gradient (25 °C → 80 °C). Key process parameters affecting reliability were then quantified, including conductive adhesive sintering (S820-F680, 39.3 W/m·K), high-temperature baking at 175 °C, and aluminum wire bonding (15 mil wire diameter and 500 mW ultrasonic power/500 g bonding force). Finally, a double-pulse dynamic test platform was established to capture switching transient characteristics. Experimental results demonstrated the following: (1) The packaged module successfully passed the 800 V high-voltage validation. Measured drain current (4.62 A) exhibited an error of <0.65% compared to the simulated value (4.65 A). (2) The simulated junction temperature (80 °C) was significantly below the safety threshold (175 °C). (3) Microscopic examination using a Leica IVesta 3 microscope (55× magnification) confirmed the absence of voids at the sintering and bonding interfaces. (4) Frequency-dependent dynamic characterization revealed a 6 nH parasitic inductance via Ansys Q3D 2025 R1 simulation, with experimental validation at 8.3 nH through double-pulse testing. Thermal evaluations up to 200 kHz indicated 109 °C peak temperature (below 175 °C datasheet limit) and low switching losses. This work provides a critical process benchmark for the micro/nano-manufacturing of high-density SiC modules. Full article
(This article belongs to the Special Issue Recent Advances in Micro/Nanofabrication, 2nd Edition)
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18 pages, 7056 KiB  
Article
Control of the SiC Polytypes in SiC Bonded Diamond Materials
by Mathias Herrmann, Jesus Andres Quintana Freire, Björn Matthey, Steffen Kunze and Sören Höhn
Ceramics 2025, 8(3), 90; https://doi.org/10.3390/ceramics8030090 - 18 Jul 2025
Viewed by 229
Abstract
Silicon carbide-bonded diamond materials produced by pressureless reaction infiltration of diamond preforms have high wear resistance and thermal conductivity, making them ideal for a range of industrial applications. During infiltration, the Si is typically converted to cubic β-SiC. The aim of the work [...] Read more.
Silicon carbide-bonded diamond materials produced by pressureless reaction infiltration of diamond preforms have high wear resistance and thermal conductivity, making them ideal for a range of industrial applications. During infiltration, the Si is typically converted to cubic β-SiC. The aim of the work was to investigate the extent to which the formation of hexagonal α-SiC can be achieved by adding α-SiC or AlN nuclei to the preform. Detailed microstructural investigations using XRD, high-resolution FE-SEM, and EBSD analyses show that both AlN and SiC serve as nuclei for α-SiC. Regardless of this, a large proportion of β-SiC forms on the surface of the diamonds. However, the added nuclei change the structure of the SiC framework that forms. Full article
(This article belongs to the Special Issue Advances in Ceramics, 3rd Edition)
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24 pages, 6475 KiB  
Review
Short-Circuit Detection and Protection Strategies for GaN E-HEMTs in High-Power Applications: A Review
by Haitz Gezala Rodero, David Garrido Díez, Iosu Aizpuru Larrañaga and Igor Baraia-Etxaburu
Electronics 2025, 14(14), 2875; https://doi.org/10.3390/electronics14142875 - 18 Jul 2025
Viewed by 392
Abstract
Gallium nitride (GaN) enhancement-mode high-electron-mobility transistors ( E-HEMTs) deliver superior performance compared to traditional silicon (Si) and silicon carbide (SiC) counterparts. Their faster switching speeds, lower on-state resistances, and higher operating frequencies enable more efficient and compact power converters. However, their integration into [...] Read more.
Gallium nitride (GaN) enhancement-mode high-electron-mobility transistors ( E-HEMTs) deliver superior performance compared to traditional silicon (Si) and silicon carbide (SiC) counterparts. Their faster switching speeds, lower on-state resistances, and higher operating frequencies enable more efficient and compact power converters. However, their integration into high-power applications is limited by critical reliability concerns, particularly regarding their short-circuit (SC) withstand capability and overvoltage (OV) resilience. GaN devices typically exhibit SC withstand times of only a few hundred nanoseconds, needing ultrafast protection circuits, which conventional desaturation (DESAT) methods cannot adequately provide. Furthermore, their high switching transients increase the risk of false activation events. The lack of avalanche capability and the dynamic nature of GaN breakdown voltage exacerbate issues related to OV stress during fault conditions. Although SC-related behaviour in GaN devices has been previously studied, a focused and comprehensive review of protection strategies tailored to GaN technology remains lacking. This paper fills that gap by providing an in-depth analysis of SC and OV failure phenomena, coupled with a critical evaluation of current and next-generation protection schemes suitable for GaN-based high-power converters. Full article
(This article belongs to the Special Issue Advances in Semiconductor GaN and Applications)
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14 pages, 5155 KiB  
Article
Erosion of AISI 4340 and AISI 8620 Steels with High Ductility Caused by SiC Particles
by Juan R. Laguna-Camacho, Ezequiel A. Gallardo-Hernández, Manuel Vite-Torres, Celia M. Calderón-Ramón, Víctor Velázquez-Martínez, Silvia M. Sánchez-Yáñez and Karla I. Zermeño-De Lojo
Metals 2025, 15(7), 800; https://doi.org/10.3390/met15070800 - 16 Jul 2025
Viewed by 229
Abstract
In this study, solid particle erosion tests were conducted to evaluate the resistance of AISI 4340 (EN24) and 8620 alloy steels against silicon carbide (SiC). These steels were selected due to their high hardness, yield strength (σy), ultimate tensile strength (σ [...] Read more.
In this study, solid particle erosion tests were conducted to evaluate the resistance of AISI 4340 (EN24) and 8620 alloy steels against silicon carbide (SiC). These steels were selected due to their high hardness, yield strength (σy), ultimate tensile strength (σuts) and elongation (%), which are significant parameters, influencing wear resistance. An erosion rig based on the ASTM G76-95 standard was used to perform the testing. Tests were carried out using different impact angles, 30°, 45°, 60° and 90°, with a particle velocity of 24 ± 2 m/s. The abrasive flow rate was 0.7 ± 0.5 g/min and the temperature was between 35 °C and 40 °C. Characterization techniques such as SEM were employed to identify the chemical composition of AISI 4340 and AISI 8620 steels and optical microscopy to determine the morphology of SiC abrasive particles. In addition, the SiC particle size was between 350 and 450 µm; it was determined by the particle size distribution technique. SEM micrographs were obtained to classify the wear mechanisms, characterized by micro-cutting, micro-ploughing, grooves, pitting actions and embedded particles on the surface at 30° and 90°. The results showed that AISI 8620 steel exhibited higher erosion resistance than AISI 4340 steel. Finally, AFM was used to evaluate the roughness variations before and after erosion tests, specifically in the central zone of the wear scars at 30° and 90° for both materials. Full article
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34 pages, 1638 KiB  
Review
Recent Advances in Bidirectional Converters and Regenerative Braking Systems in Electric Vehicles
by Hamid Naseem and Jul-Ki Seok
Actuators 2025, 14(7), 347; https://doi.org/10.3390/act14070347 - 14 Jul 2025
Viewed by 659
Abstract
As electric vehicles (EVs) continue to advance toward widespread adoption, innovations in power electronics are playing a pivotal role in improving efficiency, performance, and sustainability. This review presents recent progress in bidirectional converters and regenerative braking systems (RBSs), highlighting their contributions to energy [...] Read more.
As electric vehicles (EVs) continue to advance toward widespread adoption, innovations in power electronics are playing a pivotal role in improving efficiency, performance, and sustainability. This review presents recent progress in bidirectional converters and regenerative braking systems (RBSs), highlighting their contributions to energy recovery, battery longevity, and vehicle-to-grid integration. Bidirectional converters support two-way energy flow, enabling efficient regenerative braking and advanced charging capabilities. The integration of wide-bandgap semiconductors, such as silicon carbide and gallium nitride, further enhances power density and thermal performance. The paper evaluates various converter topologies, including single-stage and multi-stage architectures, and assesses their suitability for high-voltage EV platforms. Intelligent control strategies, including fuzzy logic, neural networks, and sliding mode control, are discussed for optimizing braking force and maximizing energy recuperation. In addition, the paper explores the influence of regenerative braking on battery degradation and presents hybrid energy storage systems and AI-based methods as mitigation strategies. Special emphasis is placed on the integration of RBSs in advanced electric vehicle platforms, including autonomous systems. The review concludes by identifying current challenges, emerging trends, and key design considerations to inform future research and practical implementation in electric vehicle energy systems. Full article
(This article belongs to the Special Issue Feature Papers in Actuators for Surface Vehicles)
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12 pages, 3006 KiB  
Article
A Comparative Study on Synthesizing SiC via Carbonization of Si (001) and Si (111) Substrates by Chemical Vapor Deposition
by Teodor Milenov, Ivalina Avramova, Vladimir Mehandziev, Ivan Zahariev, Georgi Avdeev, Daniela Karashanova, Biliana Georgieva, Blagoy Blagoev, Kiril Kirilov, Peter Rafailov, Stefan Kolev, Dimitar Dimov, Desislava Karaivanova, Dobromir Kalchevski, Dimitar Trifonov, Ivan Grozev and Valentin Popov
Materials 2025, 18(14), 3239; https://doi.org/10.3390/ma18143239 - 9 Jul 2025
Viewed by 261
Abstract
This work presents a comparative analysis of the results of silicon carbide synthesis through the carbonization of Si (001) and Si (111) substrates in the temperature range 1130–1140 °C. The synthesis involved chemical vapor deposition utilizing thermally stimulated methane reduction in a hydrogen [...] Read more.
This work presents a comparative analysis of the results of silicon carbide synthesis through the carbonization of Si (001) and Si (111) substrates in the temperature range 1130–1140 °C. The synthesis involved chemical vapor deposition utilizing thermally stimulated methane reduction in a hydrogen gas stream. The experiments employed an Oxford Nanofab Plasmalab System 100 apparatus on substrates from which the native oxide was removed according to established protocols. To minimize random experimental variations (e.g., deviations from set parameters), short synthesis durations of 3 and 5 min were analyzed. The resultant thin films underwent evaluations through several techniques, including X-ray photoelectron spectroscopy, X-ray diffractometry, optical emission spectroscopy with glow discharge, and transmission electron microscopy. A comparison and analysis were conducted between the results from both substrate orientations. Full article
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