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27 pages, 13095 KB  
Article
Process Optimization for Ultra-Precision Machining of HUD Freeform Surface Mold Cores Based on Slow Tool Servo
by Tianji Xing, Naiming Qi, Huanming Gao, Longkun Xu, Xuesen Zhao and Tao Sun
Micromachines 2026, 17(2), 164; https://doi.org/10.3390/mi17020164 - 27 Jan 2026
Viewed by 502
Abstract
With the rapid development of Head-Up Display (HUD) technology for vehicles, optical freeform mirrors, as its core optical components, are crucial for achieving system compactness and high imaging quality. However, their complex surface shapes and large-aperture characteristics pose significant challenges to ultra-precision manufacturing. [...] Read more.
With the rapid development of Head-Up Display (HUD) technology for vehicles, optical freeform mirrors, as its core optical components, are crucial for achieving system compactness and high imaging quality. However, their complex surface shapes and large-aperture characteristics pose significant challenges to ultra-precision manufacturing. This study presents a systematic optimization framework for the ultra-precision machining of HUD optical freeform mold cores, integrating surface design, tool path planning, vibration analysis, and process parameter optimization. Firstly, based on the XY polynomial freeform surface model, an off-axis three-mirror HUD system was designed, and the surface parameters and machining dimensions of the mold core were determined. For the Single-Point Diamond Turning (SPDT) Slow Tool Servo (STS) process, a hybrid trajectory planning method combining equidistant projection and cubic spline interpolation was proposed to ensure the smoothness and accuracy of the tool path. Through theoretical analysis and experimental verification, the selection criteria for tool parameters such as tool nose radius and effective cutting angle were clarified, and the mechanistic impact of Z-axis vibration on surface roughness and waviness was quantitatively revealed. Finally, through ultra-precision turning experiments and on-machine measurement, a high-precision freeform surface mold core was successfully fabricated. This validates the effectiveness and feasibility of the proposed process solution and provides technical support for the high-quality manufacturing of HUD optical elements. Full article
(This article belongs to the Special Issue Diamond Micro-Machining and Its Applications)
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27 pages, 4782 KB  
Review
Recent Advances in Hybrid Non-Conventional Assisted Ultra-High-Precision Single-Point Diamond Turning
by Shahrokh Hatefi, Yimesker Yihun and Farouk Smith
Processes 2026, 14(1), 84; https://doi.org/10.3390/pr14010084 - 26 Dec 2025
Viewed by 1118
Abstract
Ultra-precision single-point diamond turning (SPDT) remains the core process for fabricating optical-grade surfaces with nanometric roughness and sub-micrometer form accuracy. However, machining hard-to-cut or brittle materials such as high-entropy alloys, metals, ceramics, and semiconductors is limited by severe tool wear, high cutting forces, [...] Read more.
Ultra-precision single-point diamond turning (SPDT) remains the core process for fabricating optical-grade surfaces with nanometric roughness and sub-micrometer form accuracy. However, machining hard-to-cut or brittle materials such as high-entropy alloys, metals, ceramics, and semiconductors is limited by severe tool wear, high cutting forces, and brittle fracture. To overcome these challenges, a new generation of non-conventional assisted and hybrid SPDT platforms has emerged, integrating multiple physical fields, including mechanical, thermal, magnetic, chemical, or cryogenic methods, into the cutting zone. This review comprehensively summarizes recent advances in hybrid non-conventional assisted SPDT platforms that combine two or more assistive techniques such as ultrasonic vibration, laser heating, magnetic fields, plasma or gas shielding, ion implantation, and cryogenic cooling. The synergistic effects of these dual-field platforms markedly enhance machinability, suppress tool wear, and extend ductile-mode cutting windows, enabling direct ultra-precision machining of previously intractable materials. Recent key case studies are analyzed in terms of material response, surface integrity, tool life, and implementation complexity. Comparative analysis shows that hybrid SPDT can significantly reduce surface roughness, extend diamond tool life, and yield optical-quality finishes on hard-to-cut materials, including ferrous alloys, composites, and crystals. This review concludes by identifying major technical challenges and outlining future directions toward optimal hybrid SPDT platforms for next-generation ultra-precision manufacturing. Full article
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27 pages, 5663 KB  
Article
Spatiotemporal Transcriptome Profiling Reveals Nutrient Transport Dynamics in Rice Nodes and Roots During Reproductive Development
by Wan-Chun Lu, Xiu-Lan Zheng, Yue-Tong Xiao, Zhan-Fei Sun, Zhong Tang, Fang-Jie Zhao and Xin-Yuan Huang
Int. J. Mol. Sci. 2025, 26(19), 9357; https://doi.org/10.3390/ijms26199357 - 25 Sep 2025
Cited by 1 | Viewed by 1175
Abstract
Efficient allocation of mineral nutrients and photoassimilates is essential for grain development in rice. However, the transcriptional programs governing nutrient transport at key reproductive stages remain largely unresolved. Here, we performed a comprehensive transcriptome analysis of rice (Oryza sativa L.) across spatial [...] Read more.
Efficient allocation of mineral nutrients and photoassimilates is essential for grain development in rice. However, the transcriptional programs governing nutrient transport at key reproductive stages remain largely unresolved. Here, we performed a comprehensive transcriptome analysis of rice (Oryza sativa L.) across spatial (nodes, roots, and five other tissues) and temporal (seven reproductive stages) dimensions to elucidate the molecular basis of nutrient transport and allocation. RNA-seq profiling of node I identified stage-specific gene expression patterns, with the grain filling stage marked by strong induction of transporters involved in mineral allocation (e.g., OsYSL2, OsZIP3, OsSULTR3;3, SPDT) and carbohydrate distribution (e.g., OsSWEET13, OsSWEET14, OsMST6). Comparative analysis with the neck-panicle node (NPN) and root revealed tissue-specific regulatory networks, including nitrate (OsNRT1.1A, OsNRT2.3) and phosphate (OsPHT1;4, OsPHO1;3) transporters enriched at the grain filling stage. Root expression of Cd/As-related transporters (OsNRAMP5, OsCd1, OsLsi1, OsLsi2, OsLsi3) during grain filling highlights the contribution of belowground uptake to grain metal accumulation. Together, our study establishes a spatiotemporal atlas of nutrient transporter gene activity during rice reproductive development and identifies candidate genes regulating upward and lateral nutrient allocation. These findings provide insights into improving nutrient use efficiency and reducing toxic metal accumulation in rice grains through targeted manipulation of nodal and root transport systems. Full article
(This article belongs to the Special Issue Plant Physiology and Molecular Nutrition: 2nd Edition)
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16 pages, 3537 KB  
Article
A 5–18 GHz Four-Channel Multifunction Chip Using 3D Heterogeneous Integration of GaAs pHEMT and Si-CMOS
by Bai Du, Zhiyu Wang and Faxin Yu
Electronics 2025, 14(12), 2342; https://doi.org/10.3390/electronics14122342 - 7 Jun 2025
Viewed by 1559
Abstract
Compact, broadband, multi-channel RF chips with low loss and high integration are required for high-performance phased-array systems. Presented in this paper is a four-channel, multifunction RF chip operating in the 5–18 GHz frequency range that integrates broadband phase shifting, amplitude control, power amplification, [...] Read more.
Compact, broadband, multi-channel RF chips with low loss and high integration are required for high-performance phased-array systems. Presented in this paper is a four-channel, multifunction RF chip operating in the 5–18 GHz frequency range that integrates broadband phase shifting, amplitude control, power amplification, and switching functions. The chip is designed to have flip-chip bonding and stacked gold bumps to enable the compact 3D integration of the GaAs pHEMT and Si-CMOS. To ensure high-density interconnects with minimal parasitic effects, a fan-in redistribution process is implemented. The RF front-end part of this chip, fabricated through a 0.15 µm GaAs pHEMT process, integrates 6-bit digital phase shifters, 6-bit digital attenuators, low-noise amplifiers (LNAs), power amplifiers (PAs), and single-pole double-throw (SPDT) switches. To enhance multi-channel isolation and reduce crosstalk between RF chips and digital circuits, high isolation techniques, including a ground-coupled shield layer in the fan-in process and on-chip shield cavities, are utilized, which achieve isolation levels greater than 41 dB between adjacent RF channels. The measurement results demonstrate a reception gain of 0 dB with ±0.6 dB flatness, an NF below 11 dB, and transmit gain of more than 10 dB, with a VSWR of below 1.6 over the entire 5–18 GHz frequency band. The 6-bit phase shifter achieves a root mean square (RMS) phase error below 2.5° with an amplitude variation of less than 0.8 dB, while the 6-bit attenuator exhibits an RMS attenuation error of below 0.5 dB and a phase variation of less than 7°. The RF and digital chips are heterogeneously integrated using flip-chip and fan-in technology, resulting in a compact chip size of 6.2 × 6.2 × 0.33 mm3. These results validate that this is a compact, high-performance solution for advanced phased-array radar applications. Full article
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26 pages, 5460 KB  
Article
Adaptive Recombination-Based Control Strategy for Cell Balancing in Lithium-Ion Battery Packs: Modeling and Simulation
by Khalid Hassan, Siaw Fei Lu and Thio Tzer Hwai Gilbert
Electronics 2025, 14(11), 2217; https://doi.org/10.3390/electronics14112217 - 29 May 2025
Cited by 1 | Viewed by 1771
Abstract
This paper presents a novel adaptive cell recombination strategy for balancing lithium-ion battery packs, targeting electric vehicle (EV) applications. The proposed method dynamically adjusts the series–parallel configuration of individual cells based on instantaneous state of charge (SoC) and load demand, without relying on [...] Read more.
This paper presents a novel adaptive cell recombination strategy for balancing lithium-ion battery packs, targeting electric vehicle (EV) applications. The proposed method dynamically adjusts the series–parallel configuration of individual cells based on instantaneous state of charge (SoC) and load demand, without relying on conventional DC-DC converters or passive components. A hardware-efficient switching topology using SPDT (Single Pole Double Throw) switches enables flexible recombination and fault isolation with minimal complexity. The control algorithm, implemented in MATLAB/Simulink, evaluates multiple cell-grouping configurations to optimize balancing speed, energy retention, and operational safety. Simulation results under charging, discharging, and resting conditions demonstrate up to 80% faster balancing compared to sequential methods, with significantly lower component count and minimal energy loss. Validation using Panasonic NCR18650PF cells confirms the model’s real-world applicability. The method offers a scalable, high-speed, and energy-efficient solution for integration into next-generation battery management systems (BMS), achieving performance gains typically reserved for more complex converter-based architectures. Full article
(This article belongs to the Section Power Electronics)
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10 pages, 3458 KB  
Communication
Sub-6 GHz GaAs SPDT Switch Co-Designed with Shunt Inductor for ESD Protection
by Jaehyun Kwon, Jaeyong Lee, Jinho Yoo, Taehun Kim and Changkun Park
Electronics 2025, 14(9), 1707; https://doi.org/10.3390/electronics14091707 - 23 Apr 2025
Cited by 1 | Viewed by 1555
Abstract
In this study, a single-pole double-throw (SPDT) switch for Sub-6 GHz application is designed. In particular, a shunt inductor is connected to the antenna port of the switch for ESD (electrostatic discharge) protection in RF (radio frequency) front end module. The shunt inductor [...] Read more.
In this study, a single-pole double-throw (SPDT) switch for Sub-6 GHz application is designed. In particular, a shunt inductor is connected to the antenna port of the switch for ESD (electrostatic discharge) protection in RF (radio frequency) front end module. The shunt inductor not only serves as an ESD protection device, but also serves as a component of a parallel resonance circuit to suppress insertion loss of the switch. In addition, in order to secure the power handling capability, transistors turned off in the transmit (Tx) mode are implemented as quadruple-gate transistors. An SPDT switch is fabricated using GaAs pHEMT provided in the 500 nm GaAs BiFET process to verify the feasibility of the proposed switch structure. The operating frequency is set from 3 GHz to 5 GHz. The insertion loss and isolation measured in the Tx mode are lower than 0.35 dB and higher than 31.6 dB, respectively. The insertion loss and isolation measured in the Rx mode are lower than 0.32 dB and higher than 33.9 dB, respectively. The chip size including test pads is 0.890 × 0.875 mm2. Full article
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22 pages, 5496 KB  
Article
Design Optimization of RF MEMS-Driven Triangular Resonators with Sierpinski Geometry for Dual-Band Applications
by Alina Cismaru, Flavio Giacomozzi, Mircea Pasteanu and Romolo Marcelli
Micromachines 2025, 16(4), 446; https://doi.org/10.3390/mi16040446 - 9 Apr 2025
Cited by 1 | Viewed by 2670
Abstract
This paper proposes a detailed design study of resonating high-frequency notch filters driven by RF MEMS switches and their optimization for dual-band operation in the X-Band. Microstrip configurations will be considered for single and dual-band applications. An SPDT (single-pole-double-thru) switch composed of double-clamped [...] Read more.
This paper proposes a detailed design study of resonating high-frequency notch filters driven by RF MEMS switches and their optimization for dual-band operation in the X-Band. Microstrip configurations will be considered for single and dual-band applications. An SPDT (single-pole-double-thru) switch composed of double-clamped ohmic microswitches has been introduced to connect triangular resonators with Sierpinski geometry, symmetrically placed with respect to a microstrip line to obtain a dual notch response. Close frequencies or spans as wide as 2 GHz can be obtained depending on the internal complexity and the edge side. The internal complexity has been modified to introduce the possibility of using the same edge size for the frequency tuning of an elementary cell, maintaining a fixed footprint, and allowing coupled structures to implement high-frequency filters of the same size and variable operational frequencies. Preliminary experimental results have been obtained as a confirmation of the predicted device functionality. Full article
(This article belongs to the Special Issue The 15th Anniversary of Micromachines)
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16 pages, 7312 KB  
Article
Retrospective Spectrum-Conversion Method Based on Time-Modulated Van Atta Array
by Feng Zhao, Junjie Wang, Jinrong Wang, Weihong Hu, Dejun Feng and Kunpeng Song
Remote Sens. 2025, 17(7), 1257; https://doi.org/10.3390/rs17071257 - 2 Apr 2025
Viewed by 1644
Abstract
Spectrum conversion is one of the important applications in the non-linear electromagnetic (EM) field, which is widely used in antennas, wireless communication, radar imaging, etc. However, controlling spectrum conversion with excellent retrospective characteristics at oblique incidence directions remains a major issue in microwave [...] Read more.
Spectrum conversion is one of the important applications in the non-linear electromagnetic (EM) field, which is widely used in antennas, wireless communication, radar imaging, etc. However, controlling spectrum conversion with excellent retrospective characteristics at oblique incidence directions remains a major issue in microwave systems. In this paper, a time-modulated Van Atta array is proposed to manipulate the spectral distribution of the echo signal. The array prototype experiments are conducted to demonstrate the variation properties of the monostatic radar cross section (RCS) at oblique incidence directions. On this basis, the periodic modulation model of the retrospective signal is established for the time-modulated Van Atta array. Several discrete harmonic components are symmetrically distributed on both sides of the original spectra. The influence of modulation parameters on the generated harmonics is analyzed in detail. The array prototype experiment is carried out, and the variation characteristics of the monostatic RCS in the oblique incidence direction are verified. Full article
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32 pages, 1004 KB  
Article
Highly Adaptive Reconfigurable Receiver Front-End for 5G and Satellite Applications
by Mfonobong Uko, Sunday Ekpo, Sunday Enahoro, Fanuel Elias, Rahul Unnikrishnan and Yasir Al-Yasir
Technologies 2025, 13(4), 124; https://doi.org/10.3390/technologies13040124 - 22 Mar 2025
Cited by 4 | Viewed by 2561
Abstract
The deployment of fifth-generation (5G) and beyond-5G wireless communication systems necessitates advanced transceiver architectures to support high data rates, spectrum efficiency, and energy-efficient designs. This paper presents a highly adaptive reconfigurable receiver front-end (HARRF) designed for 5G and satellite applications, integrating a switchable [...] Read more.
The deployment of fifth-generation (5G) and beyond-5G wireless communication systems necessitates advanced transceiver architectures to support high data rates, spectrum efficiency, and energy-efficient designs. This paper presents a highly adaptive reconfigurable receiver front-end (HARRF) designed for 5G and satellite applications, integrating a switchable low noise amplifier (LNA) and a single pole double throw (SPDT) switch. The HARRF architecture supports both X-band (8–12 GHz) and K/Ka-band (23–28 GHz) operations, enabling seamless adaptation between radar, satellite communication, and millimeter-wave (mmWave) 5G applications. The proposed receiver front-end employs a 0.15 μm pseudomorphic high electron mobility transistor (pHEMT) process, optimised through a three-stage cascaded LNA topology. A switched-tuned matching network is utilised to achieve reconfigurability between X-band and K/Ka-band. Performance evaluations indicate that the X-band LNA achieves a gain of 23–27 dB with a noise figure below 7 dB, whereas the K/Ka-band LNA provides 23–27 dB gain with a noise figure ranging from 2.3–2.6 dB. The SPDT switch exhibits low insertion loss and high isolation, ensuring minimal signal degradation across operational bands. Network analysis and scattering parameter extractions were conducted using advanced design system (ADS) simulations, demonstrating superior return loss, power efficiency, and impedance matching. Comparative analysis with state-of-the-art designs shows that the proposed HARRF outperforms existing solutions in terms of reconfigurability, stability, and wideband operation. The results validate the feasibility of the proposed reconfigurable RF front-end in enabling efficient spectrum utilisation and energy-efficient transceiver systems for next-generation communication networks. Full article
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16 pages, 3706 KB  
Article
Development of a Web-Based e-Portal for Freeform Surfaced Lens Design and Manufacturing and Its Implementation Perspectives
by Shangkuan Liu, Kai Cheng and Negin Dianat
Machines 2025, 13(1), 59; https://doi.org/10.3390/machines13010059 - 16 Jan 2025
Cited by 1 | Viewed by 1474
Abstract
In modern freeform surfaced optics manufacturing, ultraprecision machining through single-point diamond turning (SPDT) plays a crucial role due to its ability to meet the high accuracy demands of optical design and stringent surface quality requirements of the final optic. The process involves meticulous [...] Read more.
In modern freeform surfaced optics manufacturing, ultraprecision machining through single-point diamond turning (SPDT) plays a crucial role due to its ability to meet the high accuracy demands of optical design and stringent surface quality requirements of the final optic. The process involves meticulous steps, including optic surface modeling and analysis, optic design, machining toolpath generation, and manufacturing. This paper presents an integrated approach to customized precision design and the manufacturing of freeform surfaced varifocal lenses through a web-based e-portal. The approach implements an e-portal-driven manufacturing system that seamlessly integrates lens design, modeling and analysis, toolpath generation for ultraprecision machining, mass personalized customization, and service delivery. The e-portal is specifically designed to meet the stringent demands of personalized mass customization, and to offer a highly interactive and transparent experience for the lens users. By using Shiny and R-script programming for platform development and combining COMSOL Multiphysics for the ray tracing simulation, the e-portal leverages open-source technologies to provide manufacturing service agility, responsiveness, and accessibility. Furthermore, the integration of R-script and Shiny programming allows for advanced interactive information processing, which also enables the e-portal-driven manufacturing system to be well suited for personalized complex products such as freeform surfaced lenses. Full article
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13 pages, 5511 KB  
Article
A Novel 4H-SiC SGT MOSFET with Improved P+ Shielding Region and Integrated Schottky Barrier Diode
by Xiaobo Cao, Jing Liu, Yingnan An, Xing Ren and Zhonggang Yin
Micromachines 2024, 15(7), 933; https://doi.org/10.3390/mi15070933 - 22 Jul 2024
Cited by 2 | Viewed by 2507
Abstract
A silicon carbide (SiC) SGT MOSFET featuring a “一”-shaped P+ shielding region (PSR), named SPDT-MOS, is proposed in this article. The improved PSR is introduced as a replacement for the source trench to enhance the forward performance of the device. Its improvement consists [...] Read more.
A silicon carbide (SiC) SGT MOSFET featuring a “一”-shaped P+ shielding region (PSR), named SPDT-MOS, is proposed in this article. The improved PSR is introduced as a replacement for the source trench to enhance the forward performance of the device. Its improvement consists of two parts. One is to optimize the electric field distribution of the device, and the other is to expand the current conduction path. Based on the improved PSR and grounded split gate (SG), the device remarkably improves the conduction characteristics, gate oxide reliability, and frequency response. Moreover, the integrated sidewall Schottky barrier diode (SBD) prevents the inherent body diode from being activated and improves the reverse recovery characteristics. As a result, the gate-drain capacitance, gate charge, and reverse recovery charge (Qrr) of the SPDT-MOS are 81.2%, 41.2%, and 90.71% lower than those of the DTMOS, respectively. Compared to the double shielding (DS-MOS), the SPDT-MOS exhibits a 20% reduction in on-resistance and an 8.1% increase in breakdown voltage. Full article
(This article belongs to the Special Issue Power Semiconductor Devices and Applications, 2nd Edition)
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16 pages, 8372 KB  
Article
Design and Analysis of K-Band Single-Pole Double-Throw Switches Based on GaAs Technology
by Sida Tang, Xiaoqing Liu, Mengye Cai, Jiahui Guan, Kaili Wang, Peng Li and Jitai Han
Crystals 2024, 14(7), 657; https://doi.org/10.3390/cryst14070657 - 17 Jul 2024
Cited by 1 | Viewed by 1733
Abstract
Two K-band switch circuits, each consisting of a single-pole double-throw (SPDT) switch, have been built using a 0.15 μm GaAs process. One circuit utilizes diode techniques while the other utilizes field effect transistor (FET) techniques. The diode single-pole double-throw switches that have been [...] Read more.
Two K-band switch circuits, each consisting of a single-pole double-throw (SPDT) switch, have been built using a 0.15 μm GaAs process. One circuit utilizes diode techniques while the other utilizes field effect transistor (FET) techniques. The diode single-pole double-throw switches that have been devised exhibit exceptional linearity and are capable of withstanding high power levels. The switches exhibit a return loss of 10 dB or higher, an insertion loss of 3 dB or lower, and operate within a frequency range of 19 GHz to 25 GHz. They have a compact design with a core size of only 1.05 mm2 and consume a total power of 136.8 mW. The FET SPDT switch circuits are created utilizing a parallel–parallel quarter-wavelength transmission line architecture. This design allows for a higher power output compared to using a diode. The transistorized single-pole double-throw switch circuit is designed using a parallel–parallel quarter-wavelength transmission line architecture. This design ensures a low insertion loss. By adjusting the length of the transmission line, the circuit can operate in both frequency bands; the K-band and Ka-band. Full article
(This article belongs to the Section Inorganic Crystalline Materials)
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19 pages, 6990 KB  
Article
A Reconfigurable Phase-Shifted Full-Bridge DC–DC Converter with Wide Range Output Voltage
by Jhon Brajhan Benites Quispe, Marcello Mezaroba, Alessandro Luiz Batschauer and Jean Marcos de Souza Ribeiro
Energies 2024, 17(14), 3483; https://doi.org/10.3390/en17143483 - 15 Jul 2024
Cited by 9 | Viewed by 4198
Abstract
This paper analyzes, designs and implements a reconfigurable phase-shifted full-bridge (PSFB) converter. It adopts the topology of the traditional PSFB converter and incorporates clamping circuits to solve some fundamental problems of conventional topology. In addition, auxiliary switches are employed for output reconfiguration, which [...] Read more.
This paper analyzes, designs and implements a reconfigurable phase-shifted full-bridge (PSFB) converter. It adopts the topology of the traditional PSFB converter and incorporates clamping circuits to solve some fundamental problems of conventional topology. In addition, auxiliary switches are employed for output reconfiguration, which allows expanding the output voltage range without compromising the system efficiency. Single pole double throw (SPDT) mechanical switches are used to realize series and parallel connections. In this paper, the characterization of the PSFB converter with clamping circuit and its design considerations are discussed. A 10 kW prototype with a power density of 0.485 W/cm3, 900 V input voltage and 400/800 V nominal output voltage was manufactured. The experimental results validated the analysis and confirmed the high conversion efficiency for a wide load range; an efficiency of 96.69% was obtained for the full load condition. Full article
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15 pages, 13835 KB  
Article
Wdr17 Regulates Cell Proliferation, Cell Cycle Progression and Apoptosis in Mouse Spermatocyte Cell Line
by Xin Zhao, Taili Jin, Xi Ji, Qiuyan Zhang, Xianyu Zhang, Zhenfang Wu, Zicong Li and Huaqiang Yang
Animals 2024, 14(10), 1418; https://doi.org/10.3390/ani14101418 - 9 May 2024
Cited by 1 | Viewed by 1756
Abstract
We identified Wdr17 as a highly expressed gene in pachytene spermatocytes by transcriptomic analysis of mouse testis. Germ cell-deficient infertile mouse models had significantly reduced Wdr17 expression. We performed gene interference and overexpression in the mouse spermatocyte cell line GC-2spd(ts) and investigated how [...] Read more.
We identified Wdr17 as a highly expressed gene in pachytene spermatocytes by transcriptomic analysis of mouse testis. Germ cell-deficient infertile mouse models had significantly reduced Wdr17 expression. We performed gene interference and overexpression in the mouse spermatocyte cell line GC-2spd(ts) and investigated how Wdr17 affects spermatocyte growth and development. Our results showed that Wdr17 suppression significantly decreased cell growth rate and increased cell apoptosis in GC-2spd(ts) cells. Wdr17 suppression also arrested the cell cycle at the G1 phase. On the contrary, Wdr17 overexpression significantly promoted cell proliferation and inhibited cell apoptosis in GC-2spd(ts) cells. More cells were enriched at the S stage with a concomitant reduction of cells at the G1 stage. Wdr17 promotes mouse spermatocyte proliferation by advancing cell cycle progression and inhibiting cell apoptosis, indicating its potential role in regulating spermatogenesis in the mouse. Full article
(This article belongs to the Section Animal Reproduction)
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15 pages, 5079 KB  
Article
Machinability and Surface Properties of Cryogenic Poly(methyl methacrylate) Machined via Single-Point Diamond Turning
by Xiaoyu Wu, Qiang Kang, Xiaoxing Jiang and Xudong Fang
Materials 2024, 17(4), 866; https://doi.org/10.3390/ma17040866 - 13 Feb 2024
Cited by 6 | Viewed by 2704
Abstract
Poly(methyl methacrylate) (PMMA), with a glass transition temperature (Tg) over 100 °C, shows good mechanical and optical properties and has broad applications after being machined with single-point diamond turning (SPDT) at room temperature. Because of the high Tg, current efforts mostly focus on [...] Read more.
Poly(methyl methacrylate) (PMMA), with a glass transition temperature (Tg) over 100 °C, shows good mechanical and optical properties and has broad applications after being machined with single-point diamond turning (SPDT) at room temperature. Because of the high Tg, current efforts mostly focus on optimizing machining parameters to improve workpiece precision without considering the modification of material properties. Cryogenic cooling has been proven to be an effective method in assisting ultra-precision machining for certain types of metals, alloys, and polymers, but has never been used for PMMA before. In this work, cryogenic cooling was attempted during the SPDT of PMMA workpieces to improve surface quality. The machinability and surface properties of cryogenically cooled PMMA were investigated based on the mechanical properties at corresponding temperatures. Nanoindentation tests show that, when temperature is changed from 25 °C to 0 °C, the hardness and Young’s modulus are increased by 37% and 22%, respectively. At these two temperature points, optimal parameters including spindle speed, feed rate and cut depth were obtained using Taguchi methods to obtain workpieces with high surface quality. The surface quality was evaluated based on the total height of the profile (Pt) and the arithmetic mean deviation (Ra). The measurement results show that the values of Pt and Ra of the workpiece machined at 0 °C are 124 nm and 6 nm, respectively, while the corresponding values of that machined at 25 °C are 291 nm and 11 nm. The test data show that cryogenic machining is useful for improving the form accuracy and reducing the surface roughness of PMMA. Moreover, the relationship between temperature, material properties and machinability weas established with dynamic mechanical analysis (DMA) data and a theoretical model. This can explain the origin of the better surface quality of the cryogenic material. The basis of this is that temperature affects the viscoelasticity of the polymer and the corresponding mechanical properties due to relaxation. Then, the material property changes will affect surface profile formation during machining. The experimental results and theoretical analysis show that cryogenically cooled PMMA has good machinability and improved surface quality when using SPDT compared to that at ambient temperature. Full article
(This article belongs to the Topic Advanced Composites Manufacturing and Plastics Processing)
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