Advances in Design and Applications of RF/MM-Wave Devices and Circuits

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Circuit and Signal Processing".

Deadline for manuscript submissions: 15 September 2025 | Viewed by 270

Special Issue Editors


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Guest Editor
Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, China
Interests: RF/MMIC design; micro-system integration

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Guest Editor
Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
Interests: high-efficiency power amplifier; front-end module design

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Guest Editor
Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119077, Singapore
Interests: MMIC design and layout optimization algorithm

Special Issue Information

Dear Colleagues,

We can announce a Special Issue of Electronics dedicated to the latest advancements in the design and applications of RF and MM-Wave devices and circuits. This Special Issue will bring together cutting-edge research and innovative developments in this rapidly evolving field, providing a platform for researchers, engineers, and industry professionals to share their insights and findings.

This Special Issue encompasses a wide range of topics related to RF- and MM-Wave technologies, including but not limited to the following:

Device and Modeling: Novel designs and modeling techniques for RF- and MM-Wave devices, including transistors, diodes, and passive components;

Circuit Design: Advanced circuit design methodologies for amplifiers, oscillators, mixers, and other RF/MM-Wave circuits;

System Integration: Techniques for integrating RF/MM-Wave devices and circuits into larger systems, including System-on-Chip (SoC) and System-in-Package (SiP) solutions;

Emerging Technologies: The exploration of new materials, fabrication techniques, and technologies that push the boundaries of RF/MM-Wave performance;

Applications: Practical applications of RF/MM-Wave devices and circuits in communication systems, radar, imaging, and other fields.

Dr. Xu Yan
Dr. Guansheng Lv
Dr. Jingyuan Zhang
Guest Editors

Manuscript Submission Information

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Keywords

  • RF/MMIC
  • FEM
  • system integration
  • emerging technologies

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Published Papers (1 paper)

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Research

10 pages, 3458 KiB  
Communication
Sub-6 GHz GaAs SPDT Switch Co-Designed with Shunt Inductor for ESD Protection
by Jaehyun Kwon, Jaeyong Lee, Jinho Yoo, Taehun Kim and Changkun Park
Electronics 2025, 14(9), 1707; https://doi.org/10.3390/electronics14091707 - 23 Apr 2025
Viewed by 142
Abstract
In this study, a single-pole double-throw (SPDT) switch for Sub-6 GHz application is designed. In particular, a shunt inductor is connected to the antenna port of the switch for ESD (electrostatic discharge) protection in RF (radio frequency) front end module. The shunt inductor [...] Read more.
In this study, a single-pole double-throw (SPDT) switch for Sub-6 GHz application is designed. In particular, a shunt inductor is connected to the antenna port of the switch for ESD (electrostatic discharge) protection in RF (radio frequency) front end module. The shunt inductor not only serves as an ESD protection device, but also serves as a component of a parallel resonance circuit to suppress insertion loss of the switch. In addition, in order to secure the power handling capability, transistors turned off in the transmit (Tx) mode are implemented as quadruple-gate transistors. An SPDT switch is fabricated using GaAs pHEMT provided in the 500 nm GaAs BiFET process to verify the feasibility of the proposed switch structure. The operating frequency is set from 3 GHz to 5 GHz. The insertion loss and isolation measured in the Tx mode are lower than 0.35 dB and higher than 31.6 dB, respectively. The insertion loss and isolation measured in the Rx mode are lower than 0.32 dB and higher than 33.9 dB, respectively. The chip size including test pads is 0.890 × 0.875 mm2. Full article
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