Search Results (31)

To overcome the physical constraints during the miniaturization of conventional semiconductor devices, spintronics is playing an increasingly prominent role. The Rashba effect, characterized by spin–momentum locking, has emerged as a promising solution to address challenges. Two-dimensional (2D) Janus transition metal dichalcogenides (TMDCs) break spatial inversion symmetry, creating favorable conditions for the Rashba effect. Based on first-principles calculations, 2D Janus materials XMoYZ₂ (X = S/Se/Te; Y = Si/Ge; Z = N/P) were investigated, with strain, external electric field and charge doping employed to modulate the Rashba effect. The strain results reveal that the Rashba constants of XMoYZ₂ increase significantly with compressive strain. Specifically, after applying uniaxial strain, the Rashba constant of TeMoSiP₂ is enhanced to ~2.2 times its initial value. Compressive strain reduces atomic spacing, enhances orbital overlap, and increases spin–orbit coupling (SOC) strength. All the TeMoYZ₂ materials exhibit significant anisotropy under uniaxial strain, which is favorable for spin-oriented transport. SeMoGeP₂ shows an almost linear Rashba constant–electric field correlation, while TeMoGeP₂ and TeMoSiP₂ show non-monotonic variation. The Rashba constant of TeMoSiP₂ can be enhanced to ~2.7 times its intrinsic value under either positive or negative applied electric fields. Charge doping induces negligible changes in the SOC effect. Finally, the optical absorption properties of TeMoGeP₂, TeMoSiN₂, and TeMoSiP₂ were investigated. This study clarifies the mechanism underlying the enhancement of Rashba constants in XMoYZ₂ materials, enriching the research landscape of spintronics. Full article

Spin–orbit interaction enables the generation and manipulation of spin currents without external magnetic fields, providing opportunities for spin–orbitronic devices. Here, we theoretically investigate a two-dimensional Rashba channel embedded in a Hall geometry with ferromagnetic probes. We demonstrate that symmetry breaking in this configuration leads to experimentally accessible electrical signals, such as open-circuit voltages and short-circuit currents. By analyzing the mirror symmetry of the system, we identified the FM magnetization configurations that maximize these signals. These signals arise from two distinct mechanisms: the Edelstein spin density and spin interference generated by multiple reflections at the Rashba–ferromagnet interfaces. Importantly, the interference is governed solely by the spin-precessional phase, with orbital contributions canceled out. By tuning the channel width, the interference produces Fabry–Perot resonances that allow controllable enhancement of these electrical signals. The resulting Hall responses is well within the range of experimentally reported spin Hall angles, confirming their experimental feasibility. Our results highlight how coherent spin interference, combined with the Edelstein effect, provides a controllable pathway for spin current engineering. Full article

Revealing singular quantum phenomena in various non-Hermitian systems is a hot topic in condensed matter physics research, with the bulk-boundary correspondence being one of the core issues in non-Hermitian topological states. In addition, the spin-orbit coupling (SOC) applied to electrons moving in the electric field in the material can bring unique topological properties to the energy band of the material. We investigated the topological phase transition of a non-Hermitian Su–Schrieffer–Heeger (SSH) model with SOC in the generalized Brillouin zone (GBZ). We demonstrate that SOC can alter the position and number of phase transition points. Due to the non-Hermitian skin effect, the bulk-boundary correspondence is broken, and the local positions of zero mode and bulk eigenstates will also change. By unitary transformation, two subspaces were obtained, and the exact solution of topological phase transition was obtained in the GBZ. The exact solution of non-Hermitian systems with the Dresselhaus and Rashba types of SOC is consistent with the numerical solutions. This result can be applied to more complex non-Hermitian models, providing a strong reference for experimental researchers in topological materials. Full article

We investigate spin-to-charge conversion via the Edelstein effect in a 2D Rashba electron gas using the semiclassical Boltzmann approach. We analyze the magnetization arising from the direct Edelstein effect, taking into account an anisotropic Rashba model. We study how this effect depends on the effective masses and Rashba spin–orbit coupling parameters, extracting analytical expressions for the high electronic density regime. Indeed, it is possible to manipulate the anisotropy introduced into the system through these parameters to achieve a boost in the Edelstein response compared to the isotropic Rashba model. We also discuss the theoretical framework to study the inverse Edelstein effect and calculate self-consistently the electric current induced by the proximity of the system to a ferromagnet. These results provide insights into the role of Rashba spin–orbit coupling and anisotropic effects in spin–charge conversion phenomena. Full article

In this paper, we review our work on the manipulation of magnetization in ferromagnetic semiconductors (FMSs) using electric-current-induced spin-orbit torque (SOT). Our review focuses on FMS layers from the (Ga,Mn)As zinc-blende family grown by molecular beam epitaxy. We describe the processes used to obtain spin polarization of the current that is required to achieve SOT, and we briefly discuss methods of specimen preparation and of measuring the state of magnetization. Using specific examples, we then discuss experiments for switching the magnetization in FMS layers with either out-of-plane or in-plane easy axes. We compare the efficiency of SOT manipulation in single-layer FMS structures to that observed in heavy-metal/ferromagnet bilayers that are commonly used in magnetization switching by SOT. We then provide examples of prototype devices made possible by manipulation of magnetization by SOT in FMSs, such as read-write devices. Finally, based on our experimental results, we discuss future directions which need to be explored to achieve practical magnetic memories and related applications based on SOT switching. Full article

The spin Hall effect for the model Hamiltonian of graphene with Rashba spin–orbit coupling is analyzed by means of a recently derived quantum kinetic theory of the linear response for multi-band electron systems. The latter expresses the interband part of the density matrix in terms of the intraband occupation numbers, which can be obtained as solutions of a Boltzmann transport equation. The analysis, which, in the case of the model here considered, can be carried out in a completely analytical way, thus provides an effective pedagogical illustration of the general theory. While our results agree with those previously obtained with alternative approaches for the same model, our comparatively simpler and more physically transparent derivation illustrates the advantages of our formalism when dealing with non trivial multi-band Hamiltonians. Full article

We study theoretically the supercurrent and the superconducting diode effect (SDE) in a structure comprising parallel-coupled double quantum dots (DQDs) sandwiched between two superconductor leads in the presence of a magnetic flux. The influence of the Rashba spin–orbit interaction (RSOI), which induces a spin-dependent phase factor in the dot–superconductor coupling strength, is taken into account by adopting the nonequilibrium Green’s function technique. This RSOI-induced phase factor serves as a driving force for the supercurrent in addition to the usual superconducting phase difference, and it leads to the system’s left/right asymmetry. Correspondingly, the magnitude of the positive and negative critical currents become different from each other: the so-called SDE. Our results show that the period, magnitude, and direction of the supercurrents depend strongly on the RSOI-induced phase factor, dots’ energy levels, interdot coupling strengths, and the magnetic flux. In the absence of magnetic flux, the diode efficiency is negative and may approach $-2$, which indicates the perfect diode effect with only negative flowing supercurrent in the absence of a positive one. Interestingly enough, both the sign and magnitude of the diode efficiency can be efficiently adjusted with the help of magnetic flux, the dots’ energy levels and the interdot coupling strength and thus provide a controllable SDE by rich means, such as gate voltage or host materials of the system. Full article

Two-dimensional (2D) materials have shown outstanding potential for new devices based on their interesting electrical properties beyond conventional 3D materials. In recent years, new concepts such as the valley degree of freedom have been studied to develop valleytronics in hexagonal lattice 2D materials. We investigated the valley degree of freedom of GaX and Janus GaXY (X, Y = S, Se, Te). By considering the spin–orbit coupling (SOC) effect in the band structure calculations, we identified the Rashba-type spin splitting in band structures of Janus Ga₂SSe and Ga₂STe. Further, we confirmed that the Zeeman-type spin splitting at the K and K’ valleys of GaX and Janus Ga₂XY show opposite spin contributions. We also calculated the Berry curvatures of GaX and Janus GaXY. In this study, we find that GaX and Janus Ga₂XY have a similar magnitude of Berry curvatures, while having opposite signs at the K and K’ points. In particular, GaTe and Ga₂SeTe have relatively larger Berry curvatures of about 3.98 Ų and 3.41 Ų, respectively, than other GaX and Janus Ga₂XY. Full article

We study theoretically the Josephson diode effect (JDE) when realized in a system composed of parallel-coupled double-quantum dots (DQDs) sandwiched between two semiconductor nanowires deposited on an s-wave superconductor surface. Due to the combined effects of proximity-induced superconductivity, strong Rashba spin–orbit interaction, and the Zeeman splitting inside the nanowires, a pair of Majorana bound states (MBSs) may possibly emerge at opposite ends of each nanowire. Different phase factors arising from the superconductor substrate can be generated in the coupling amplitudes between the DQDs and MBSs prepared at the left and right nanowires, and this will result in the Josephson current. We find that the critical Josephson currents in positive and negative directions are different from each other in amplitude within an oscillation period with respect to the magnetic flux penetrating through the system, a phenomenon known as the JDE. It arises from the quantum interference effect in this double-path device, and it can hardly occur in the system of one QD coupled to MBSs. Our results also show that the diode efficiency can reach up to $50\%$, but this depends on the overlap amplitude between the MBSs, as well as the energy levels of the DQDs adjustable by gate voltages. The present model is realizable within current nanofabrication technologies and may find practical use in the interdisciplinary field of Majorana and Josephson physics. Full article

Lead halide perovskites (LHPs) containing organic parts are emerging optoelectronic materials with a wide range of applications thanks to their high optical absorption, carrier mobility, and easy preparation methods. They possess spin-dependent properties, such as strong spin–orbit coupling (SOC), and are promising for spintronics. The Rashba effect in LHPs can be manipulated by a magnetic field and a polarized light field. Considering the surfaces and interfaces of LHPs, light polarization-dependent optoelectronics of LHPs has attracted attention, especially in terms of spin-dependent photocurrents (SDPs). Currently, there are intense efforts being made in the identification and separation of SDPs and spin-to-charge interconversion in LHP. Here, we provide a comprehensive review of second-order nonlinear photocurrents in LHP in regard to spintronics. First, a detailed background on Rashba SOC and its related effects (including the inverse Rashba–Edelstein effect) is given. Subsequently, nonlinear photo-induced effects leading to SDPs are presented. Then, SDPs due to the photo-induced inverse spin Hall effect and the circular photogalvanic effect, together with photocurrent due to the photon drag effect, are compared. This is followed by the main focus of nonlinear photocurrents in LHPs containing organic parts, starting from fundamentals related to spin-dependent optoelectronics. Finally, we conclude with a brief summary and future prospects. Full article

The Rashba effect appears in the semiconductors with an inversion–asymmetric structure and strong spin-orbit coupling, which splits the spin-degenerated band into two sub-bands with opposite spin states. The Rashba effect can not only be used to regulate carrier relaxations, thereby improving the performance of photoelectric devices, but also used to expand the applications of semiconductors in spintronics. In this mini-review, recent research progress on the Rashba effect of two-dimensional (2D) organic–inorganic hybrid perovskites is summarized. The origin and magnitude of Rashba spin splitting, layer-dependent Rashba band splitting of 2D perovskites, the Rashba effect in 2D perovskite quantum dots, a 2D/3D perovskite composite, and 2D-perovskites-based van der Waals heterostructures are discussed. Moreover, applications of the 2D Rashba effect in circularly polarized light detection are reviewed. Finally, future research to modulate the Rashba strength in 2D perovskites is prospected, which is conceived to promote the optoelectronic and spintronic applications of 2D perovskites. Full article

Intercalation of noble metals can produce giant Rashba-type spin–orbit splittings in graphene. The spin–orbit splitting of more than 100 meV has yet to be achieved in graphene on metal or semiconductor substrates. Here, we report the p-type graphene obtained by Pt intercalation of zero-layer graphene on SiC substrate. The spin splitting of ∼200 meV was observed at a wide range of binding energies. Comparing the results of theoretical studies of different models with the experimental ones measured by spin-ARPES, XPS and STM methods, we concluded that inducing giant spin–orbit splitting requires not only a relatively close distance between graphene and Pt layer but also the presence of graphene corrugation caused by a non-flat Pt layer. This makes it possible to find a compromise between strong hybridization and increased spin–orbit interaction. In our case, the Pt submonolayer possesses nanometer-scale lateral ordering under graphene. Full article

The main advantage of using ferroelectric materials as a component of complex heterostructures is the ability to tune various properties of the whole system by means of an external electric field. In particular, the electric field may change the polarization direction within the ferroelectric material and consequently affect the structural properties, which in turn affects the electronic and magnetic properties of the neighboring material. In addition, ferroelectrics allow the electrostriction phenomenon to proceed, which is promising and can be used to affect the magnetic states of the interface state in the heterostructure through a magnetic component. The interfacial phenomena are of great interest, as they provide extended functionality useful for next-generation electronic devices. Following the idea of utilizing ferroelectrics in heterostructural components in the present works, we consider 2DEG, the Rashba effect, the effect of magnetoelectric coupling, and magnetostriction in order to emphasize the advantages of such heterostructures as components of devices. For this purpose, model systems of LaMnO${}_3$/BaTiO${}_3$, La${}_2$CuO${}_4$/BaTiO${}_3$, Bi/BaTiO${}_3$, and Bi/PbTiO${}_3$, Fe/BaTiO${}_3$ heterostructures are investigated using density functional theory calculations. Full article

We investigate the electronic properties of a semiconductor quantum ring with an elliptical shape and non-uniform height, allowing for distributed quantum-dot-like bulges along its perimeter. The adiabatic approximation and the finite element method are combined to calculate the allowed electron states in the structure under the effective mass approximation, considering the contributions from Rashba and Dresselahaus spin–orbit interactions and the Zeeman effect in the presence of an applied magnetic field. We discuss the features of the calculated spectra for two different ring geometries: a symmetric one with four dot-like bulges, and an asymmetric one with three hilled protuberances. The information about those states allows us to evaluate the linear optical absorption response associated with interlevel transitions between the ground and lowest excited states. This phenomenon takes place at resonant energies of only a few milielectronvolts. It is observed that spin–orbit interactions tend to quench this response under zero-field conditions in the case of symmetric confinement. Full article

We theoretically investigate the properties of an electron energy spectrum in a double GaAs-Al_0.3Ga_0.7As quantum ring by using the effective mass and adiabatic approximations, together with a realistic description of the confining potential profile, which is assumed to be deformed due to the application of an intense nonresonant laser field. The effects of the applied magnetic field and spin-orbit interaction are included. We discuss the features of the lowest confined energy levels under a variation of magnetic field strengths and intense laser parameters. The influence of this external probe on the linear optical absorption response associated with interlevel transitions is analyzed by considering both the presence and absence of spin-orbit effects. Full article