Search Results (40)

A broadband, efficient monolithic microwave integrated circuit power amplifier (MMIC PA) in OMMIC’s 0.1 μm GaN-on-Si technology for 5G millimeter-wave communication is presented. This study concentrates on the output matching design, which has an important influence on the PA’s performance. A compact one-order synthesized transformer network (STN) is adopted to match the 50 Ω load to the extracted large-signal output model of the transistor. A dual-objective strategy is developed for parameter optimization, incorporating the impedance transformation trajectory inside the predefined optimal impedance domain (OID) that satisfies the required specifications, with approximation to selected optimal load impedances. By introducing a custom adjustment factor β into the error function, coupled with an automated iterative tuning process based on S-parameter simulations, desired broadband matching results can be rapidly achieved. The proposed two-stage PA occupies a small chip area of only 1.23 mm² and demonstrates good frequency consistency over the 24–31 GHz band. Continuous-wave characterization shows a flat small-signal gain of 19.7 ± 0.5 dB; both the output power (P_out) and the power-added efficiency (PAE) at the 4 dB compression point remain smooth, ranging from 32.3 to 32.7 dBm and 35.5% to 37.8%, respectively. The peak PAE reaches up to nearly 40% at the center frequency. Full article

High-frequency (h. f.) harmonic distortion (HD) of advanced SiGe heterojunction bipolar transistor (HBT)-based power cells (PwCs), featuring optimized metallization interconnections between individual HBTs, was investigated. Single tone input power (P_in) excitations at 1, 2, 5, and 10 GHz frequencies were employed. The output power (P_out) of the fundamental tone and its harmonics were analyzed in both the frequency and time domains. A rapid increase in the third harmonic of P_out was observed at input powers exceeding −8 dBm for a fundamental frequency of 10 GHz in two different PwC technologies. This increase in the third harmonic was analyzed in terms of nonlinear current waveforms, the nonlinearity of the HBT p-n junction diffusion capacitances, substrate current behavior versus P_in, and avalanche multiplication current. To assess the RF power performance of the PwCs, scalar and vectorial load-pull (LP) measurements were conducted and analyzed. Under matched conditions, the SiGe PwCs demonstrated good linearity, particularly at high frequencies. The key power performance of the PwCs was measured and simulated as follows: input power 1 dB compression point (P_{in_1dB}) of −3 dBm, transducer power gain (G_T) of 15 dB, and power added efficiency (PAE) of 50% at 30 GHz. All measured data were corroborated with simulations using the compact model HiCuM L2. Full article

A survey was conducted to assess the impact of on-board gutting in the pouting fishery, Trisopterus luscus (L.), from the Bay of Biscay (area FAO 27.VIII) on the parasite burden of macroscopic ascaridoid nematodes, including anisakids (causing anisakidosis) and raphidascaridids (causing consumer rejection) in these fish. The fish were caught in the Bay of Biscay and collected from the fish market in Granada (southern Spain). Fish larger than 25 cm were gutted on board after capture. A detailed examination of the fish revealed the presence of nematode larvae, which were identified morphologically and molecularly (PCR-RFLP: polymerase chain reaction with restriction fragment polymorphism). Results revealed that ungutted fish harbored only third-stage larvae of ascaridoids (Anisakis and Hysterothylacium) while prevalence reached up to 91%. In contrast, gutted fish exhibited a significant reduction in both the prevalence (36%) and mean abundance (MA, 4.44 vs. 0.91) of these larvae. The prevalence of Anisakis spp. larvae was reduced by over 20%, with a more pronounced reduction in abundance of more than 40% (MA, 1.56 vs. 0.91). Hysterothylacium larvae were completely absent (MA 2.88 vs. 0.00). These findings indicate that gutting, while not highly efficient, lowers Anisakis larvae presence, thereby reducing the risk of anisakiasis to consumers. Additionally, the complete removal of Hysterothylacium larvae enhances the fish’s appearance, making it more appealing and increasing its commercial value, as well as reducing the risk of seizure by health authorities. Further research on these on-board evisceration practices is needed to enhance effectiveness and reduce zoonotic nematodes in commercial fishes. Full article

Millimeter-wave (mm-Wave) phased array systems need to meet the transmitter (Tx) equivalent isotropic radiated power (EIRP) requirement, and that depends mainly on the design of two key sub-components: (1) the antenna array and (2) the Tx power amplifier (PA) in the front-end-modules (FEMs). Simulations using an electromagnetic (EM) solver carried out in Cadence AWR with AXIEM suggest that for two uniform square patch antenna arrays at 24 GHz, the 4 element array has ~6 dB lower antenna gain and twice the half power beam width (HPBW) compared to the 16 element array. We also present measurements and post-layout parasitic-extracted (PEX) EM simulation data taken on two broadband mm-Wave PAs designed in our lab that cover the key portions of the fifth-generation (5G) FR2-band (i.e., 24.25–52.6 GHz) that lies between the super-high-frequency (SHF, i.e., 3–30 GHz) band and the extremely-high-frequency (EHF, i.e., 30–300 GHz) band: one designed in a 22 nm fully depleted silicon on insulator (FD-SOI) CMOS process, and the other in an advanced 40 nm Gallium Nitride (GaN) high-electron-mobility transistor (HEMT) process. The FD-SOI PA achieves saturated output power (P_OUT,SAT) of ~14 dBm and peak power-added efficiency (PAE) of ~20% with ~14 dB of gain and 3 dB bandwidth (BW) from ~19.1 to 46.5 GHz in measurement, while the GaN PA achieves measured P_OUT,SAT of ~24 dBm and peak PAE of ~20% with ~20 dB gain and 3 dB BW from ~19.9 to 35.2 GHz. The PAs’ measured data are in good agreement with the PEX EM simulated data, and 3rd Watt-level GaN PA design data are also presented, but with simulated PEX EM data only. Assuming each antenna element will be driven by one FEM and each phased array targets the same 65 dBm EIRP, millimeter wave (mm-Wave) antenna arrays using the Watt-level GaN PAs and FEMs are expected to achieve roughly 2× wider HPBW with 4× reduction in the array size compared with the arrays using Si FEMs, which shall alleviate the thorny mm-Wave line-of-sight (LOS)-blocking problems significantly. Full article

In order to improve the off-state and breakdown characteristics of double-channel GaN HEMTs, an ultra-thin barrier layer was chosen as the second barrier layer. The strongly polarized and ultra-thin AlN sub-barrier and the InAlN sub-barrier are great candidates. In this article, the two epitaxial structures, AlGaN/GaN/AlN/GaN (sub-AlN) HEMTs and AlGaN/GaN/InAlN/GaN (sub-InAlN) HEMTs, were compared to select a more suitable sub-barrier layer. Through TEM images of the InAlN barrier layer, the segregation of In components can be seen, which decreases the mobility of the second channel. Thus, the sub-AlN HEMTs have a higher output current density and transconductance than those of the sub-InAlN HEMTs. Because the high-quality AlN barrier layer shields the gate leakage current, a 294 V breakdown voltage was achieved by the sub-AlN HEMTs, which is higher than the 121 V of the sub-InAlN HEMTs. The current gain cut-off frequency (f_T) and maximum oscillation frequency (f_max) of the sub-AlN HEMTs are higher than that of the sub-InAlN HEMTs from low to high bias voltage. The power-added efficiency (PAE) and output power density (P_out) of the sub-AlN HEMTs are 57% and 11.3 W/mm at 3.6 GHz and 50 V of drain voltage (V_d), respectively. For the sub-InAlN HEMTs, the PAE and P_out are 41.4% and 8.69 W/mm, because of the worse drain lag ratio. Thus, the P_out of the sub-AlN HEMTs is higher than that of the sub-InAlN HEMTs. Full article

The present study focused on the use of pouting (Trisopterus luscus), an underutilized gadoid fish species, as a fresh product of potential commercial interest. Accordingly, non-degutted pouting specimens (145–195 g and 15–22 cm) were stored under chilling conditions (0 °C) for microbial, chemical and sensory analyses to evaluate their commercial quality and shelf life. A progressive quality loss (p < 0.05) was detected for this lean species (5.58 g lipids·kg⁻¹ muscle) as the storage time increased, as determined through microbial (aerobes, psychrotrophs and Enterobacteriaceae counts), lipid hydrolysis (free fatty acid value), lipid oxidation (conjugated diene and triene, thiobarbituric acid reactive substance, and fluorescence values) and sensory acceptance assessment. A detailed comparison to related lean fish species revealed that the pouting exhibited a fast quality breakdown under refrigeration conditions. Thus, after 9 d of chilled storage, the psychrotroph counts exceeded the acceptable limits (8.54 log CFU·g⁻¹), and the fish specimens were found to be rejectable, with the sensory panel, external odor and eye appearance being the limiting factors. In contrast, the pouting specimens exhibited high quality after 3 d of storage, with the quality being still acceptable after 6 d. According to the current search for novel, underutilized species, pouting is proposed as a promising source. Full article

A millimeter-wave (mmWave) gallium nitride (GaN) high-power amplifier (HPA) monolithic microwave-integrated circuit (MMIC) was implemented, considering a source via effect. In this paper, we introduce guidelines for designing GaN HPA MMICs, from device sizing to meeting high-power specifications, power matching considering source via effects, schematic design of three-stage amplifier structures, and electromagnetic (EM) simulation. Based on the results of load pull simulation and small-signal maximum stable gain (MSG) simulation, the GaN high-electron-mobility transistor (HEMT) size was selected to be 8 × 70 μm. However, since the source via model provided by the foundry was significantly different from the EM results, it was necessary to readjust the power matching considering this. Additionally, when selecting the source via size, the larger the size, the easier the matching, but since the layout of the peripheral bias circuit is not possible, a compromise was required considering the actual layout. To prevent in-band oscillation, an RC parallel circuit was added to the input matching circuit, and low-frequency oscillation was solved by adding a gate resistor on the PCB module. The proposed PA was fabricated with a commercial 0.1 μm GaN HEMT MMIC process. It exhibited 38.56 to 39.71 dBm output power (P_out), 14.2 to 16.7 dB linear gain, and 14.1% to 18.2% power-added efficiency (PAE) in the upper Ka band. The fabricated GaN power amplifier MMIC shows competitive P_out in the upper Ka band above 33 GHz. Full article

Channel modeling is a first step towards the successful projecting of any wireless communication system. Hence, in this paper, we analyze the performance at the output of a multi-branch selection combining (SC) diversity receiver in a wireless environment that has been distracted by fading and co-channel interference (CCI), whereby the fading is modelled by newer Beaulieu-Xie (BX) distribution, and the CCI is modelled by the κ-µ distribution. The BX distribution provides the ability to include in consideration any number of line-of-sight (LOS) useful signal components and non-LOS (NLOS) useful signal components. This distribution contains characteristics of some other fading models thanks to its flexible fading parameters, which also applies to the κ-µ distribution. We derived here the expressions for the probability density function (PDF) and cumulative distribution function (CDF) for the output signal-to-co-channel interference ratio (SIR). After that, other performances are obtained, namely: outage probability (Pout), channel capacity (CC), moment-generating function (MGF), average bit error probability (ABEP), level crossing rate (LCR), and average fade duration (AFD). Numerical results are presented in several graphs versus the SIR for different values of fading and CCI parameters, as well as the number of input branches in the SC receiver. Then, the impact of parameters on all performance is checked. From our numerical results, it is possible to directly obtain the performance for all derived and displayed quantities for cases of previously known distributions of fading and CCI by inserting the appropriate parameter values. In the second part of the paper, a workflow for automated network experimentation relying on the synergy of Large Language Models (LLMs) and model-driven engineering (MDE) is presented, while the previously derived expressions are used for evaluation. Due to the aforementioned, the biggest value of the obtained results is the applicability to the cases of a large number of other distributions for fading and CCI by replacing the corresponding parameters in the formulas for the respective performances. Full article

Short-range Internet of Things (IoT) sensor nodes operating at 2.4 GHz must provide ubiquitous wireless sensor networks (WSNs) with energy-efficient, wide-range output power (POUT). They must also be fully integrated on a single chip for wireless body area networks (WBANs) and wireless personal area networks (WPANs) using low-power Bluetooth (BLE) and Zigbee standards. The proposed fully integrated transmitter (TX) utilizes a digitally controllable current-mode class-D (CMCD) power amplifier (PA) with a second harmonic distortion (HD2) suppression to reduce VCO pulling in an integrated system while meeting harmonic limit regulations. The CMCD PA is divided into 7-bit slices that can be reconfigured between differential and single-ended topologies. Duty cycle distortion compensation is performed for HD2 suppression, and an HD2 rejection filter and a modified C-L-C low-pass filter (LPF) reduce HD2 further. Implemented in a 28 nm CMOS process, the TX achieves a wide P_OUT range of from 12.1 to −31 dBm and provides a maximum efficiency of 39.8% while consuming 41.1 mW at 12.1 dBm P_OUT. The calibrated HD2 level is −82.2 dBc at 9.93 dBm P_OUT, resulting in a transmitter figure of merit (TX_FoM) of −97.52 dB. Higher-order harmonic levels remain below −41.2 dBm even at 12.1 dBm P_OUT, meeting regulatory requirements. Full article

Many control algorithms have been applied to manage the flow of products in supply chains. However, in the era of thriving globalization, even a small disruption can be fatal for some companies. On the other hand, the rising environmental impact of a rapid industry is imposing limitations on energy usage and waste generation. Therefore, taking into account the mentioned perspectives, there is a need to explore the research directions that concern product perishability together with different demand patterns and their uncertain character. This study aims to propose a robust control approach that combines neural networks and optimal controller tuning with the use of both different demand patterns and fuzzy logic. Firstly, the demand forecast is generated, following which the parameters of the neural controller are optimized, taking into account the different demand patterns and uncertainty. As part of the verification of the designated controller, the sensitivity to parameter changes has been determined using the OAT method. It turns out that the proposed approach can provide significant waste reductions compared to the well-known POUT method while maintaining low stocks, a high fill rate, and providing lower sensitivity for parameter changes in most considered cases. The effectiveness of this approach is verified by using a dataset from a worldwide retailer. The simulation results show that the proposed approach can effectively improve the control of uncertain perishable inventories. Full article

The narrowband Internet-of-Things (NB-IoT) has been developed to provide low-power, wide-area IoT applications. The efficiency of a power amplifier (PA) in a transmitter is crucial for a longer battery lifetime, satisfying the requirements for output power and linearity. In addition, the design of an internal complementary metal-oxide semiconductor (CMOS) PA is typically required when considering commercial applications to include the operation of an optional external PA. This paper presents a dual-mode CMOS PA with an external PA driver for NB-IoT applications. The proposed PA supports an external PA mode without degrading the performances of output power, linearity, and stability. In the operation of an external PA mode, the PA provides a sufficient gain to drive an external PA. A parallel-combined transistor method is adopted for a dual-mode operation and a third-order intermodulation distortion (IMD3) cancellation. The proposed CMOS PA with an external PA driver was implemented using 40 nm-CMOS technology. The PA achieves a gain of 20.4 dB, a saturated output power of 28.8 dBm, and a power-added efficiency (PAE) of 57.8% in high-power (HP) mode at 920 MHz. With an NB-IoT signal (200 kHz π/4-differential quadrature phase shift keying (DQPSK)), the proposed PA achieves 24.2 dBm output power (Pout) with a 31.0% PAE, while satisfying −45 dBc adjacent channel leakage ratio (ACLR). More than 80% of the current consumption at 12 dBm Pout could be saved compared to that in HP mode when the proposed PA operates in low-power (LP) mode. The implemented dual-mode CMOS PA provides high linear output power with high efficiency, while supporting an external PA mode. The proposed PA is a good candidate for NB-IoT applications. Full article

In this paper, AlGaN/GaN high-electron-mobility transistors (HEMTs) with ohmic etching patterns (OEPs) “fabricated to improve device radio frequency (RF) performance for Ka-band applications” are reported. The fabricated AlGaN/GaN HEMTs with OEP structures were used to reduce the source and drain resistances (R_s and R_d) for RF performance improvements. Within the proposed study using 1 μm hole, 3 μm hole, 1 μm line, and 3 μm line OEP HEMTs with 2 × 25 μm gate widths, the small signal performance, large signal performance, and minimum noise figure (NF_min) with optimized values were measured for 1 μm line OEP HEMTs. The cut-off frequency (f_T) and maximum oscillation frequency (f_max) value of the 1 μm line OEP device exhibited optimized values of 36.4 GHz and 158.29 GHz, respectively. The load–pull results show that the 1 μm line OEP HEMTs exhibited an optimized maximum output power density (P_{out, max}) of 1.94 W/mm at 28 GHz. The 1 μm line OEP HEMTs also exhibited an optimized NF_min of 1.75 dB at 28 GHz. The increase in the contact area between the ohmic metal and the AlGaN barrier layer was used to reduce the contact resistance of the OEP HEMTs, and the results show that the 1 μm line OEP HEMT could be fabricated, producing the best improvement in RF performance for Ka-band applications. Full article

Flash evaporation processes are widely adopted in the desalination, food processing, waste heat recovery and other industries for heat extraction or product separation. In this paper, a pressure-driven phase transition model is developed by improving the Lee model and combined with the VOF (Volume of Fluid) method to numerically simulate the flash evaporation process. In this modified Lee phase transition model, the driving force for the rates of the local phase transition is calculated using the local temperature and static pressure magnitude. Numerical simulations are carried out in a water-circulating flash chamber and compared with the experimental results to obtain the values of the time relaxation parameters. And the non-equilibrium fraction of the outlet water can be effectively obtained under different conditions of flow rate, inlet temperature and initial liquid level height. The time relaxation factor takes values from 0.195 to 0.43 (P_out,v = 19.9 kPa) and from 0.31 to 0.92 (P_out,v = 31.2 kPa) with increasing superheat. In addition, the model can effectively represent the evolution of the unstable flow flash evaporation from the initial rapid boiling state to dynamic equilibrium. Full article

The effect of different SiN_x thicknesses on the performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) was investigated in this paper. The current, transconductance (G_m), cut-off frequency (f_T), maximum oscillation frequency (f_max), power performance, and output third-order intercept point (OIP3) of devices with three different SiN_x thicknesses (150 nm, 200 nm, and 250 nm) were measured and analyzed. The DC measurements revealed an increase in both the drain-source current (I_DS) and G_m values of the device with increasing SiN_x thickness. The S-parameter measurement results show that devices with a higher SiN_x thickness exhibit improved f_T and f_max. Regarding power performance, thicker SiN_x devices also improve the output power density (P_out) and power-added efficiency (PAE) in the Ka-band. In addition, the two-tone measurement results at 28 GHz show that the OIP3 increased from 35.60 dBm to 40.87 dBm as the SiN_x thickness increased from 150 nm to 250 nm. The device’s characteristics improved by appropriately increasing the SiN_x thickness. Full article

In order to study the temperature reliability of high-power amplifiers under high cand cold conditions, a 400 W solid-state power amplifier was taken as an example to explore the variation in its performance. The test results showed that its output power, gain, and power-added efficiency increased with the increase in temperature at a fixed frequency. Under a fixed input power, Pout and gain both showed different trends with the rising temperature. Within the frequency band of 2–10 MHz, the higher the temperature, the better the output power and gain. However, within the frequency range of 10–30 MHz, the higher the temperature, the worse the performance. Moreover, with the increasing temperature, its power-added efficiency, the second harmonic and the third harmonic also showed a decreasing trend. Detailed analysis showed that the degradation and inversion of performance parameters are closely related to the zero temperature coefficient and self-heating effect of the lateral double-diffused metal–oxide–semiconductor field-effect transistor. Meanwhile, it is also affected by the circuit structure and thermal design of the PA. In order to ensure stable performance in different environments, performance degradation can be improved by hardware compensation. Therefore, analyzing the working parameters at different temperatures for high-power PAs is the key to achieving temperature control and ensuring their long-term stability and reliability. This can provide relatively accurate reference data for subsequent heat dissipation optimization, greatly improve design efficiency, and even shorten the development cycle and reduce costs. Full article