Search Results (32)

The Kongco area of Nima in the northern part of the Lhasa terrane has a suite of alkaline granitic porphyry dykes associated with Early Cretaceous granites and accompanied by Cu/Mo mineralization. LA-ICP-MS ²⁰⁶Pb/²³⁸U zircon geochronology performed on the dykes produced an age of 104.15 ± 0.94 Ma (MSWD = 0.98), indicating the Early Cretaceous emplacement of the dykes. The dykes exhibit high silica (SiO₂ = 76.22~77.90 wt.%), high potassium (K₂O = 4.97~6.21 wt.%), high alkalinity (K₂O + Na₂O = 8.07~8.98 wt.%), low calcium (CaO = 0.24~0.83 wt.%), low magnesium (MgO = 0.06~0.20 wt.%), and moderate aluminum content (Al₂O₃ = 11.93~12.45 wt.%). The Rieterman index (σ) ranges from 1.93 to 2.34. A/NK (molar ratio Al₂O₃/(Na₂O + K₂O)) and A/CNK (molar ratio Al₂O₃/(CaO + Na₂O + K₂O)) values of the dykes range from 1.06 to 1.18 and 0.98 to 1.09, respectively. The dykes are relatively enriched in Rb, Th, U, K, Ta, Ce, Nd, Zr, Hf, Sm, Y, Yb, and Lu, and they show a noticeable relative depletion in Ba, Nb, Sr, P, Eu, and Ti, as well as an average differentiation index (DI) of 96.42. The dykes also exhibit high FeO_T/MgO ratios (3.60~10.41), Ga/Al ratios (2.22 × 10⁻⁴~3.01 × 10⁻⁴), Y/Nb ratios (1.75~2.40), and Rb/Nb ratios (8.36~20.76). Additionally, they have high whole-rock Zr saturation temperatures (884~914 °C), a pronounced Eu negative anomaly (δEu = 0.04~0.23), and a rightward-sloping “V-shaped” rare earth element pattern. These characteristics suggest that the granitic porphyry dykes can be classified as A2-type granites formed in a post-collisional tectonic environment and that they are weakly peraluminous, high-potassium, and Calc-alkaline basaltic rocks. Positive ε_Hf(t) values = 0.43~3.63 and a relatively young Hf crustal model age (T_DM2 = 826~1005 Ma, ⁸⁷Sr/⁸⁶Sr ratios = 0.7043~0.7064, and ε_Nd(t) = −8.60~−2.95 all indicate lower crust and mantle mixing. The lower crust and mantle mixing model is also supported by (²⁰⁶Pb/²⁰⁴Pb)t = 18.627~18.788, (²⁰⁷Pb/²⁰⁴Pb)t = 15.707~15.719, (²⁰⁸Pb/²⁰⁴Pb)t = 39.038~39.110). Together, the Hf, Sr and Pb isotopic ratios indicate that the Kongco granitic porphyry dykes where derived from juvenile crust formed by the addition of mantle material to the lower crust. From this, we infer that the Kongco granitic porphyry dykes are related to a partial melting of the lower crust induced by subduction slab break-off and asthenospheric upwelling during the collision between the Qiangtang and Lhasa terranes and that they experienced significant fractional crystallization dominated by potassium feldspar and amphibole. These dykes are also accompanied by significant copper mineralization (five samples, copper content 0.2%), suggesting a close relationship between the magmatism associated with these dykes and regional metallogenesis, indicating a high potential for mineral exploration. Full article

The Ordovician/Silurian boundary (Wufeng/Longmaxi formations) in the Shizhu region, eastern Sichuan Basin, China hosts organic-rich black shales which are frequently interbedded with bentonite and hydrothermal minerals (e.g., pyrite). This study investigated the mineralogical, total organic carbon (TOC), total sulfur (TS), and major and trace element compositions of organic-rich samples. Non-visible volcanic input is identified to influence organic matter accumulation, as shown by the correlations between TOC and proxies, including Zr and Hf contents and the Cr/Al₂O₃, V/Al₂O₃, Ni/Al₂O₃, and SiO₂/Al₂O₃ ratios. Redox indicators (V/Cr, v/v + Ni, degree of pyritization (DOP), U/Th, and Mo contents) display positive correlations with TOC values, suggesting that an oxygen-depleted environment is necessary for organic matter (OM) preservation. The TOC values exhibit better regression coefficients (R²) against redox indicators, including DOP (0.43), U/Th (0.70), and Mo contents (0.62), than V/Cr (0.16) and v/v + Ni (0.21). This may because some V, Cr, and Ni is hosted in non-volcanic ashes within shales but not inherited from contemporaneous water columns. The greater scatter in TOC-DOP and TOC-Mo relative to TOC-U/Th relations may result from hydrothermal venting in shales, evidenced by the coexistence of framboid and euhedral pyrite and the previous finding of hydrothermally altered dolomites in the studied sections. There is no systematic relation between TOC and Ni/Co ratios, and this means that portions of Ni are contributed by non-visible volcanic ashes and Ni and Co are redistributed during the precipitation of hydrothermal pyrites due to their strong chalcophile affinities. Such a feature may further suggest that most pyrites are precipitated during hydrothermal venting. The DOP displays broad correlations with non-visible volcanic indicators, supporting that hydrothermal venting may be triggered by volcanic activities. The outcomes of this study highlight that caution is necessary when evaluating the sedimentary facies features of volcanism-affected organic-rich black shales with the used metallic proxies. Full article

The development of state-of-the-art gas sensors based on metal oxide semiconductors (MOS) to monitor hazardous and greenhouse gas (e.g., methane, CH₄, and carbon dioxide, CO₂) has been significantly advanced. Moreover, the morphological and topographical structures of MOSs have significantly influenced the gas sensors by means of surface catalytic activities. This work examines the impact of morphological and topological networked assembly of zinc oxide (ZnO) nanostructures, including microparticles and nanoparticles (0D), nanowires and nanorods (1D), nanodisks (2D), and hierarchical networks of tetrapods (3D). Gas sensors consisting of vertically aligned ZnO nanorods (ZnO–NR) and topologically interconnected tetrapods (T–ZnO) of varying diameter and arm thickness synthesized using aqueous phase deposition and flame transport method on interdigitated Pt electrodes are evaluated for methane detection. Smaller-diameter nanorods and tetrapod arms (nanowire-like), having higher surface-to-volume ratios with reasonable porosity, exhibit improved sensing behavior. Interestingly, when the nanorods’ diameter and interconnected tetrapod arm thickness were comparable to the width of the depletion layer, a significant increase in sensitivity (from 2 to 30) and reduction in response/recovery time (from 58 s to 5.9 s) resulted, ascribed to rapid desorption of analyte species. Additionally, nanoparticles surface-catalyzed with Pd (~50 nm) accelerated gas sensing and lowered operating temperature (from 200 °C to 50 °C) when combined with UV photoactivation. We modeled the experimental findings using a modified general formula for ZnO methane sensors derived from the catalytic chemical reaction between methane molecules and oxygen ions and considered the structural surface-to-volume ratios (S/V) and electronic depletion region width (L_d) applicable to other gas sensors (e.g., SnO₂, TiO₂, MoO₃, and WO₃). Finally, the effects of UV light excitation reducing detection temperature help to break through the bottleneck of ZnO-based materials as energy-saving chemiresistors and promote applications relevant to environmental and industrial harmful gas detection. Full article

Understanding the behavior of p-n junctions is fundamental in semiconductor physics and electronics engineering. Traditional teaching methods often focus on material-based definitions of p-type and n-type semiconductors by discussing doping. However, within the depletion region, an additional description is also applicable; this relates to the relative positioning of the energy, which depends on the energy discrepancy between the Fermi $\left(E_f\right)$ and intrinsic Fermi $\left(E_i\right)$ levels and is also based on carrier type. These two descriptions are at variance when describing the properties of the voltage drop and the energy band bending in the depletion regions of the p-n junction diode in equilibrium, and also when the doping is asymmetrical $(N_a\ne N_d$). Our experience teaching introductory semiconductor courses has revealed a lack of clarity regarding the behavior of the region types within the depletion region, which can, in turn, lead to confusion and hinder students’ understanding of the critical concept of voltage drop in the depletion region. This paper aims to underline the difference between the two descriptions above and propose specific terminology for the energy band-based definition in the depletion region; we suggest that instead of “n-type” and “p-type”, the terms “n-like” and “p-like” materials will be used. Further, building on the similarities in energy band bending and potential variations between p-n junctions and MOS capacitors, we suggest that studying the depletion region of p-n junctions can offer valuable insights into the formation and behavior of the inversion layer at the semiconductor surface of MOS capacitors. Full article

The non-equiatomic Al_0.32CrFeTi_0.73(Ni_1.50−xMo_x) (x = 0, 0.23) high-entropy alloy (HEA) coatings were prepared by the high-velocity oxygen fuel (HVOF) method. The microstructures and corrosion behaviors of the HVOF-prepared coatings were investigated. The corrosion behaviors were characterized by polarization, EIS and Mott-Schottky tests under a 3.5 wt.% sodium chloride aqueous solution open to air at room temperature. The Al_0.32CrFeTi_0.73Ni_1.50 coating is a simple BCC single-phase solid solution structure compared with the corresponding poly-phase composite bulk. The structure of the Al_0.32CrFeTi_0.73Ni_1.27Mo_0.23 coating, combined with the introduction of the Mo element, means that the (Cr,Mo)-rich sigma phase precipitates out of the BCC solid solution matrix phase, thus forming Cr-depleted regions around the sigma phases. The solid solution of large atomic-size Mo element causes the lattice expansion of the BCC solid solution matrix phase. Micro-hole and micro-crack defects are formed on the surface of both coatings. The growth of both coatings’ passivation films is spontaneous. Both passivation films are stable and Cr₂O₃-rich, P-type, single-layer structures. The Al_0.32CrFeTi_0.73Ni_1.50 coating has better corrosion resistance and much less pitting susceptibility than the corresponding bulk. The corrosion type of the Mo-free coating is mainly pitting, occurring in the coating’s surface defects. The Al_0.32CrFeTi_0.73Ni_1.27Mo_0.23 coating with the introduction of Mo element increases pitting susceptibility and deteriorates corrosion resistance compared with the Mo-free Al_0.32CrFeTi_0.73Ni_1.50 coating. The corrosion type of the Mo-bearing coating is mainly pitting, occurring in the coating’s surface defects and Cr-depleted regions. Full article

The effect of temperature on the localized corrosion resistance and passive film characteristics of laser powder-bed fusion (LPBF) 316L (UNS S31603) was studied in a buffered 3.5 wt% NaCl solution at 25, 50, and 75 °C. DC techniques such as cyclic potentiodynamic polarization showed lower passive current densities, high breakdown potentials, and a higher resistance to initial breakdown compared with wrought 316L samples at all temperatures. However, LPBF 316L was more susceptible to metastable pitting at potentials before film breakdown and higher damage accumulation post film breakdown. AC techniques, such as Mott–Schottky analysis and electrochemical impedance spectroscopy, showed that the formed passive film was more robust on the LPBF 316L samples at all temperatures, accounting for the higher initial resistance to pitting. However, with increasing temperatures, the film formed had an increasing concentration of defect density. Passive compositions at the various test temperatures studied using X-ray photoelectron spectroscopy (XPS) showed that the LPBF samples showed higher amounts of Cr and Fe oxides and hydroxides compared with the wrought samples, which made the passive films on the LPBF samples more compact and protective. Investigation of the pits formed on the LPBF showed the preferential regions of attack were the melt-pool boundaries and cell interiors due to their being depleted of Cr and Mo when compared with the boundaries and matrix. Full article

Fe-Mn carbonate is the dominant mineral in the Erdaokan Ag deposit, which represents the first large independent silver deposit during the Late Triassic Period in the Duobaoshan Cu-Mo-Au mineralization concentrated area of Heilongjiang Province, NE China. The Fe-Mn carbonates in the deposit frequently co-exist with Ag minerals. Thus, the presence of Fe-Mn carbonates plays a crucial role in the ore-formation process, making their analysis essential for obtaining valuable metallogenic information about the Erdaokan deposit. Through microexamination, SEM and EDS analysis, a clear relationship between Fe-Mn carbonate minerals and Ag minerals was established. Furthermore, electron probe microanalysis, LA-ICP-MS, and Sr-Nd isotope tests were conducted to analyze Fe-Mn carbonates for significant metallogenic insights. The distribution pattern of trace elements and rare-earth elements in Fe-Mn carbonates is similar, characterized by Zr depletion (below 0.131 ppm), enrichment of light rare-earth elements, a noticeable deficit of Eu (δEu = 0.06–0.63), and an average Y/Ho value of 34.29, indicating the involvement of upper mantle-derived deep magma in the formation of ore-forming materials. The samples had a Sm-Nd isochron age of 233.7 ± 1.2 Ma, suggesting that the Erdaokan Ag deposit was formed during the Late Triassic Period. This study highlights the significance of Fe-Mn carbonate as a valuable mineral indicator for regional silver prospecting purposes, and confirms the Late Triassic Period as another important metallogenic stage in the Duobaoshan Cu-Mo-Au mineralization concentrated area. Full article

TID effects occur in MOS-gated transistors in radiation environments where proton and gamma-rays irradiate the devices. TID effects seriously affect the electrical characteristics of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). They can eventually result in the malfunction of power systems when exposed to long-term radiation conditions. We irradiated gamma-rays and protons into 1.2 kV SiC MOSFETs and evaluated the change in electrical properties to analyze the TID’s effects. As a result of the experiment, the threshold voltage (V_T) and on-resistance (R_on) of 1.2 kV SiC MOSFETs decreased because positive fixed charges inside the oxide increased depending on the radiation dose of the gamma-ray and fluence of the proton irradiations. The degradation of breakdown voltage (BV) occurred owing to a change in the depletion curvature at the edge of termination regions owing to the trapping of the charge in the field’s oxide. Full article

The Aolunhua Mo deposit is a typical porphyry deposit, which is located in the middle southern section of the Da Hinggan Range metallogenic belt. Here, we report LA-ICP-MS zircon U-Pb age data from the Mo-associated granitoid, together with the element geochemistry of the zircons, discussing the source material of the ore-forming rock of the deposit. The zircon data constrain the crystallization age of the granite porphyry as 135.0 ± 1.0 Ma, correlating it with the widespread Yanshanian intermediate–felsic magmatic activity. The Th/U ratio of the zircon is greater than 0.1, with a significant positive Ce anomaly (Ce* = 1.72–188.71) and a negative Eu anomaly (Eu* = 0.05–0.57). The zircons show depleted LREE and enriched HREE patterns, as well as low La and Pr contents, suggesting crystallization from crust-derived magmas. Based on the geology of the ore deposit and the age data, in combination with the regional geodynamic evolution, we infer that the Aolunhua Mo deposit was formed near the peak stage of Sn poly-metallic metallogenesis in the Da Hinggan Range region at around 140 Ma, associated with a tectonic setting, characterized by the transition from compression to extension. Based on a comparison with the newly found Mo deposits along the banks of the Xilamulun River, we propose that the Tianshan–Linxi is an important Mo-metallogenic belt. It also suggests an increased likelihood for the occurrence of Mo along the north bank of the Xilamulun River. Full article

Palm oil production in Southeast Asia often occurs on nutrient-poor, acidic soils converted from primary forest. Both the agricultural conversion and the production of oil palm are subsidised in Indonesia. As well as depleting soil organic C and plant nutrients, agricultural production on these soils can result in the accumulation of trace elements (TEs)—including micronutrients and non-essential trace elements—from the use of TE-containing agrichemicals including phosphate fertilisers and Cu fungicides. We tested the hypothesis that palm soils will have lower C concentrations than forest soils, as well as accumulation of TEs including Cu, Zn and Cd. Soil samples from active and abandoned oil palm plantations in Sumatra, Indonesia, were analysed for general soil properties as well as TE concentrations. Soils were acidic and low in key nutrients, with production likely to be limited by deficiencies of N, P, K, Mg and Mo, present at some sites in mean concentrations as low as 0.021%, 118 mg kg⁻¹, 778 mg kg⁻¹, 1023 mg kg⁻¹ and 0.095 mg kg⁻¹, respectively. Mean organic C was lower (2.0–3.3%) than reported values in nearby forest soils (7.7%). Soils under palm production contained elevated levels of Cu, Zn, As and Pb up to 38, 91, 9.0 and 28 mg kg⁻¹, respectively, likely due to agrichemical use. The correction of nutrient deficiencies in palm production would require significant fertiliser inputs, which would exacerbate TE accumulation and reduce the net economic revenue from oil production. Our data have shown that in the plantations we have sampled, soils have become degraded. These tropical, weathered, and naturally nutrient-poor soils are ill suited to intensive production that requires high ongoing nutrient inputs. These findings have implications for the sustainability of a regionally significant production system across Southeast Asia. Full article

A novel 4H-SiC trench metal-oxide-semiconductor field-effect transistor (TMOS) with depletion-mode pMOS (D-pMOS) is proposed and investigated via TCAD simulation. It has an auxiliary gate electrode that controls the electrical connections of P-shield layers under the trench bottom through the D-pMOS. In linear operation, the D-pMOS is turned off and then the potential of the P-shield layers is raised with the auxiliary gate, which shrinks the width of the depletion region of the P-shield/N-drift junction to reduce the resistance of the JFET region. In the saturation operation, the saturation current density of the proposed TMOS is reduced, benefiting from its relatively large cell pitch. The design concept eases the tension between specific on-resistance and short circuit capabilities. Numerical simulation results show that the proposed TMOS exhibits a short circuit withstand time that is 1.92 times longer than that of the conventional TMOS. In addition, a drive tactic is introduced and optimized for the proposed TMOS, which requires only one set of gate drivers. Compared with the conventional TMOS, the switching performance is improved and the switching loss is reduced by 40%. Full article

A novel super-junction (SJ) double-trench metal oxide semiconductor field effect transistor (DT-MOS) is proposed and studied using Synopsys Sentaurus TCAD in this article. The simulation results show that the proposed MOSFET has good static performance and a longer short-circuit withstand time (t_sc). The super-junction structure enables the device to possess an excellent compromise of breakdown voltage (BV) and specific on-resistance (R_on,sp). Under short-circuit conditions, the depletion of p-pillar, p-shield, and floating p regions can effectively reduce saturation current and improve short-circuit capability. The proposed device has minimum gate-drain charge (Q_gd) and gate-drain capacitance (C_gd) compared with other devices. Moreover, the formation of floating p regions will not lead to an increase in process complexity. Therefore, the proposed MOSFET can maintain good dynamic and static performance and short-circuit ability together without increasing the difficulty of the process. Full article

β-Ga₂O₃ Schottky barrier diodes (SBDs) suffer from the electric field crowding and barrier height lowering effect, resulting in a low breakdown voltage (BV) and high reverse leakage current. Here, we developed β-Ga₂O₃ trench MOS-type Schottky barrier diodes (TMSBDs) on β-Ga₂O₃ single-crystal substrates with halide vapor phase epitaxial layers based on ultraviolet lithography and dry etching. The $1/C^2-V$ plots are deflected at 2.24 V, which is caused by the complete depletion in the mesa region of the TMSBDs. A close-to-unity ideality factor of 1.02 and a low turn-on voltage of 0.72 V are obtained. This is due to the low interface trap density in the metal/semiconductor interface of TMSBDs, as confirmed by the current–voltage ($I–V$) hysteresis measurements. The specific on-resistance calculated with the actual Schottky contact area increases as the area ratio ($AR$) increases because of the current spreading phenomenon. Furthermore, the reverse leakage current of the TMSBDs is smaller and the BV is increased by 120 V compared with the regular SBD. This work paves the way for further improving the overall performance of β-Ga₂O₃ TMSBDs. Full article

High porosity phenomena of U-10Mo fuel foil appear in the U–Mo/Al monolithic fuel plate under deep burnup. In this study, the fuel skeleton creep-based bubble growth model is further improved with the intrusion effect of solid fission products, multiplying the reduction factor in the bubble volume to obtain the bubble pressure. With the locally enhanced irradiation creep of the Mo-depleted region considered, a simulation of the thermo-mechanical coupling behaviors of the monolithic fuel plate L1P7A0 is carried out, based on the commercial finite element (FE) analysis code ABAQUS. A fission-induced creep rate coefficient of 250 × 10⁻²² mm³/(fission·MPa) is identified for the Mo-depleted region, with the predictions of porosity and the thickness deformation of U–Mo fuel foil agreeing well with the experimental data. The research results indicate that: (1) the locally enhanced fuel skeleton creep ability is responsible for the higher porosities near the U–Mo/Zr interface; (2) the entrance of solid fission products into the fission bubbles at high burnup is the dominant factor in inducing high porosity in the regions of the most heavily irradiated fuel foil, especially near the fuel foil edge bearing the elevated external hydrostatic pressures; (3) with the intrusion effect of solid fission products considered, the prediction of the porosity increases from ~15% to ~35% near the fuel foil edge; (4) the intrusion of solid fission products leads to extra differences between the bubble pressure and the external pressure, and simultaneously results in the strengthened fuel skeleton creep deformation contributions to the bubble growth. Full article

THz detection in a silicon structure can be an effective instrument not only for image detection, and material and gas sensing, but also for communications. Next-generation 6G communications assume the possibility of achieving a large-band transmission, using free space propagation with THz carriers. This possibility relies on the availability of an effective, low-cost detector technology. THz detection by self-mixing can provide an effective amplitude demodulation of the incoming carrier, with antennas directly fabricated on the chip. In this case, the speed of the detectors represents a crucial point in the definition of the bandwidth whereby several GHz are indeed required by the communication systems. The self-mixing process is intrinsically very fast, since it depends on the non-linear interaction of the radiation with the majority carriers inside the semiconductor structure. In this paper, we evaluate analytically the time dependence of the onset of the rectified voltage. A potential propagation along the detector channel follows the self-mixing rectification, accompanied by the charging of the parasitic capacitances of the structure. A numerical simulator can easily evaluate the delay due to this propagation along the structure, but the transient of the true origin of the signal, i.e., the establishment of the self-mixing voltage, at the current time, can be only inferred by analytical approach. In this work, we use the model developed for the THz rectification in the depletion region of an MOS capacitance to develop a transient model of the formation of the characteristic self-mixing charge dipole, and of the generation of the rectified potential. Subsequently, we show by TCAD simulations the propagation of the effect on the semiconductor structure, which surrounds the rectifying barrier, and evaluate the overall time response of a detector. Full article