Search Results (24)

The metal–insulator transition of vanadium dioxide (VO₂), a phase change material, has been utilized for various applications. The characterization of the VO₂ thin film structure, in both its optical properties and thickness, remains a critical problem. In this paper, VO₂ thin films were fabricated on silicon substrates by magnetron sputtering. By using temperature-varying spectroscopic ellipsometry, VO₂ thin films of different thicknesses were characterized in an energy range of 0.5–3.0 eV, and the phase change temperature was determined using ellipsometry data. The optical properties of these samples were determined from temperature-dependent ellipsometry measurements by using the Drude and multiple Tauc–Lorentz model. Broadband temperature-dependent reflectivity spectra were obtained. An analysis of the samples revealed that their bandgaps, plasma frequencies, and other modeling parameters demonstrated a pattern of change with increasing temperature, which could be explained by the underlying physics. This study will help with the design of VO₂-based structures for a broad range of applications. Full article

The narrow bandgap InN material, with exceptional physical properties, has recently gained considerable attention, encouraging many scientists/engineers to design infrared photodetectors, light-emitting diodes, laser diodes, solar cells, and high-power electronic devices. The InN/Sapphire samples of different film thicknesses that we have used in our methodical experimental and theoretical studies are grown by plasma-assisted molecular-beam epitaxy. Hall effect measurements on these samples have revealed high-electron-charge carrier concentration, η. The preparation of InN epifilms is quite sensitive to the growth temperature T, plasma power, N/In ratio, and pressure, P. Due to the reduced distance between N atoms at a higher P, one expects the N-flow kinetics, diffusion, surface components, and scattering rates to change in the growth chamber which might impact the quality of InN films. We believe that the ionized N, rather than molecular, or neutral species are responsible for controlling the growth of InN/Sapphire epifilms. Temperature- and power-dependent photoluminescence measurements are performed, validating the bandgap variation (~0.60–0.80 eV) of all the samples. High-resolution X-ray diffraction studies have indicated that the increase in growth temperature caused the perceived narrow peaks in the X-ray-rocking curves, leading to better-quality films with well-ordered crystalline structures. Careful simulations of the infrared reflectivity spectra provided values of η and mobility μ, in good accordance with the Hall measurements. Our first-order Raman scattering spectroscopy study has not only identified the accurate phonon values of InN samples but also revealed the low-frequency longitudinal optical phonon plasmon-coupled mode in excellent agreement with theoretical calculations. Full article

This study is dedicated to the development of a new type of cesium tungsten bronze energy-saving laminated glass and explores its application in insulating glass combinations, offering innovative ideas and practical solutions for advancing energy-saving glass technology. Experimental results show that both Cs_xWO₃ (CWO) dispersions exhibit good visible light transmittance and near-infrared shielding properties, with CWO1 demonstrating superior shielding in the 650–950 nm range, attributed to differences in shape and size distribution and verified by simulations using the Drude–Lorentz model and the finite element method. Full article

Tetrachlorodiethyl Benzimidazo Carbocyanine (TDBC) layers are very interesting for photonics applications due to their huge oscillator strength, narrow absorption and low-cost fabrication. They are mainly used in strong coupling studies but also for wavelength selective grating fabrication, light concentration, absorption enhancement and so on. However, these intrinsic properties, particularly the refractive index, require further investigation. In this work, we first reviewed the values of the refractive index of TDBC layers reported in the literature. Using fitting with the Drude–Lorentz model, differences are highlighted. We then fabricated pure TDBC layers and measured their properties using ellipsometry and absorption spectroscopy. Finally, we also evaluated the refractive index as a function of the layer bleaching. This work shows that although the precise refractive index evaluation of pure TDBC layers is dependent on the measurement method, their oscillator strength force still remains very high without bleaching. Full article

In a conducting medium held at finite temperature, free carriers perform Brownian motion and generate fluctuating electromagnetic fields. In this paper, an averaged Lorentz force density is computed that turns out to be nonzero in a thin subsurface layer, pointing towards the surface, while it vanishes in the bulk. This is an elementary example of rectified fluctuations, similar to the Casimir force or radiative heat transport. The results obtained also provide an experimental way to distinguish between the Drude and so-called plasma models. Full article

Optical absorption spectra of 9 MeV electron-irradiated GaSe crystals were studied. Two absorption bands with the low-photon-energy threshold at 1.35 and 1.73 eV (T = 300 K) appeared in the transparency region of GaSe after the high-energy-electron irradiation. The observed absorption bands were attributed to the defect states induced by Ga vacancies in two charge states, having the energy positions at 0.23 and 0.61 eV above the valence band maximum at T = 300 K. The optical pump-terahertz probe technique (OPTP) was employed to study the dark and photoexcited terahertz conductivity and charge carrier recombination dynamics at two-photon excitation of as-grown and 9 MeV electron-irradiated GaSe crystals. The measured values of the differential terahertz transmission at a specified photoexcitation condition were used to extract the terahertz charge carrier mobilities. The determined terahertz charge carrier mobility values were ~46 cm²/V·s and ~14 cm²/V·s for as-grown and heavily electron-irradiated GaSe crystals, respectively. These are quite close to the values determined from the Lorentz–Drude–Smith fitting of the measured dielectric constant spectra. The photo-injection-level-dependent charge carrier lifetimes were determined from the measured OPTP data, bearing in mind the model injection-level dependencies of the recombination rates governed by interband and trap-assisted Auger recombination, bulk and surface Shockley–Read–Hall (SRH) recombination and interband radiative transitions in the limit of a high injection level. It was found that GaSe possesses a long charge carrier lifetime (a~1.9 × 10⁻⁶ ps⁻¹, b~2.7 × 10⁻²¹ cm³ps⁻¹ and c~1.3 × 10⁻³⁷ cm⁶ps⁻¹), i.e., τ~0.53 μs in the limit of a relatively low injection, when the contribution from SRH recombination is dominant. The electron irradiation of as-grown GaSe crystals reduced the charge carrier lifetime at a high injection level due to Auger recombination through radiation-induced defects. It was found that the terahertz spectra of the dielectric constants of as-grown and electron-irradiated GaSe crystals can be fitted with acceptable accuracy using the Lorentz model with the Drude–Smith term accounting for the free-carrier conductivity. Full article

The exceptional thermoelectric properties of PbTe are believed to be associated with the incipient ferroelectricity of this material, which is caused by strong electron–phonon coupling that connects phononic and electronic dynamics. Here, we have used terahertz time-domain spectroscopy measurements to generate complex permittivity spectra for a set of epitaxially grown PbTe thin films with thicknesses between 100 nm and 500 nm at temperatures from 10 $\mathrm{K}$ to 300 $\mathrm{K}$. Using a Drude–Lorentz model, we retrieved the physical parameters of both the phononic and electronic contributions to the THz permittivity. We observed a strong decrease, or softening, of the transverse optical phonon mode frequency with decreasing temperature, determining a thickness-independent negative ferroelectric-transition critical temperature, while we found a thickness-dependent anharmonic phonon decay lifetime. The electronic contribution to the permittivity was larger in thinner films, and both the carrier density and mobility increased with decreasing temperature in all films. Finally, we detected a thickness-dependent longitudinal optical phonon mode frequency, indicating the presence of plasmon–phonon coupling. Full article

The lattice dynamical properties of dilute InAs_1−xN_x/InP (001) epilayers (0 ≤ x ≤ 0.03) grown by gas-source molecular beam epitaxy were carefully studied experimentally and theoretically. A high-resolution Brüker IFS 120 v/S spectrometer was employed to measure the room-temperature infrared reflectivity (IRR) spectra at near-normal incidence (θ_i = 0). The results in the frequency range of 180–500 cm⁻¹ revealed accurate values of the characteristic In-As-like and In-N-like vibrational modes. For InAs_1−xN_x alloys, a classical “Drude–Lorentz” model was constructed to obtain the dielectric functions $\tilde{\mathsf{\epsilon }}\left(\mathsf{\omega }\right)$ in the far IR regions by incorporating InAs-like and InN-like transverse optical ${\mathsf{\omega }}_{\mathrm{T}\mathrm{O}}$ modes. Longitudinal optical ${\mathsf{\omega }}_{\mathrm{L}\mathrm{O}}$ phonons were achieved from the imaginary parts of the simulated dielectric loss functions. The theoretical results of IRR spectra for InAs_1−xN_x/InP (001) epilayers using a multi-layer optics methodology provided a very good agreement with the experimental data. At oblique incidence (θ_i ≠ 0), our study of s- and p-polarized reflectance (R_s,p(ω)) and transmission (T_s,p(ω)) spectra allowed the simultaneous perception of the ${\mathsf{\omega }}_{\mathrm{T}\mathrm{O}}$ and ${\mathsf{\omega }}_{\mathrm{L}\mathrm{O}}$ phonons of the InAs, InN and InAs_0.97N_0.03 layers. Based on the average t-matrix Green’s function theory, the results of local vibrational modes for light ${\mathrm{S}\mathrm{i}}_{\mathrm{I}\mathrm{n}}^{+}$ donors and ${\mathrm{S}\mathrm{i}}_{\mathrm{A}\mathrm{s}}^{-}, {\mathrm{C}}_{\mathrm{A}\mathrm{s}}^{-}$ acceptors in InAs were found in good agreement with the existing Raman scattering and infrared spectroscopy data. $\mathrm{I}\mathrm{n}\mathrm{I}\mathrm{n}\mathrm{N}$, however, the method predicted an in-band mode for the ${\mathrm{M}\mathrm{g}}_{\mathrm{I}\mathrm{n}}^{-}$ acceptor while projecting an impurity mode of the ${\mathrm{S}\mathrm{i}}_{\mathrm{I}\mathrm{n}}^{+}$ donor to appear just above the maximum ${\mathsf{\omega }}_{\mathrm{m}\mathrm{a}\mathrm{x}}^{\mathrm{I}\mathrm{n}\mathrm{N}}[\equiv 595 {\mathrm{c}\mathrm{m}}^{-1}$] phonon frequency region. In InAs_1−xN_x/InP (001) epifilms, the comparison of reflectivity/transmission spectra with experiments and the predictions of impurity modes for isoelectronic donor and acceptor impurities in InAs and InN can be valuable for appraising the role of defects in other technologically important semiconductors. Full article

Analytical modeling presents symmetries and aesthetic-mathematical characteristics which are not catchable in numerical computation for science and technology; nanoscience plays a significant role in unification attempts, considering also models including holistic aspects of reality. In this paper we present new discovered results about the complete analytical quantum-relativistic form of the mean square deviation of position $R^2(t)$ related to a recently introduced Drude–Lorentz-like model (DS model), already performed at classical, quantum and relativistic level. The function $R^2(t)$ gives precise information about the distance crossed by carriers (electrons, ions, etc.) inside a nanostructure, considering both quantum effects and relativistic velocities. The model has a wide scale range of applicability; the nanoscale is considered in this paper, but it holds application from sub-pico-level to macro-level because of the existence of a gauge factor, making it applicable to every oscillating process in nature. Examples of application and suggestions supplement this paper, as well as interesting developments to be studied related to the model and to one of the basic elements of a current unified holistic approach based on vacuum energy. Full article

The response of plasmonic metal particles to an electromagnetic wave produces significant features at the nanoscale level. Different properties of the internal composition of a metal, such as its ionic background and the free electron gas, begin to manifest more prominently. As the dimensions of the nanostructures decrease, the classical local theory gradually becomes inadequate. Therefore, Maxwell’s equations need to be supplemented with a relationship determining the dynamics of current density which is the essence of nonlocal plasmonic models. In this field of physics, the standard (linearized) hydrodynamic model (HDM) has been widely adopted with great success, serving as the basis for a variety of simulation methods. However, ongoing efforts are also being made to expand and refine it. Recently, the GNOR (general nonlocal optical response) modification of the HDM has been used, with the intention of incorporating the influence of electron gas diffusion. Clearly, from the classical description of fluid dynamics, a close relationship between viscosive damping and diffusion arises. This offers a relevant motivation for introducing the GNOR modification in an alternative manner. The standard HDM and its existing GNOR modification also do not include the influence of interband electron transitions in the conduction band and other phenomena that are part of many refining modifications of the Drude–Lorentz and other models of metal permittivity. In this article, we present a modified version of GNOR-HDM that incorporates the viscosive damping of the electron gas and a generalized Drude–Lorentz term. In the selected simulations, we also introduce Landau damping, which corrects the magnitude of the standard damping constant of the electron gas based on the size of the nanoparticle. We have chosen a spherical particle as a suitable object for testing and comparing HD models and their modifications because it allows the calculation of precise analytical solutions for the interactions and, simultaneously, it is a relatively easily fabricated nanostructure in practice. Our contribution also includes our own analytical method for solving the HDM interaction of a plane wave with a spherical particle. This method forms the core of calculations of the characteristic quantities, such as the extinction cross-sections and the corresponding components of electric fields and current densities. Full article

Graphene quantum dots (GQDs) with a band gap have been widely applied in many fields owing to their unique optical properties. To better utilize the optical advantages of GQDs, it is important to understand their optical characteristics. Our study demonstrates the optical properties and carrier behaviors of synthesized graphene oxide quantum dot (GOQD) and reduced graphene oxide quantum dot (rGOQD) pellets via Terahertz time-domain spectroscopy (THz-TDS). The complex permittivity and optical conductivity are obtained in the terahertz region, indicating that the optical conductivity of the GOQD is higher than that of the rGOQD. Although rGOQD has a higher carrier density, approximately 1.5-times than that of GOQD, the lower charge carrier mobility of the rGOQD, which is obtained using Drude–Lorentz oscillator model fitting contributes to a decrease in optical conductivity. This lower mobility can be attributed to the more significant number of defect states within the rGOQD compared to GOQD. To the best of our knowledge, our study initially demonstrates the optical property and carrier behaviors of GOQD and rGOQD in the THz region. Moreover, this study provides important information on factors influencing carrier behavior to various fields in which carrier behavior plays an important role. Full article

The hybrid implicit–explicit finite-difference time-domain (HIE-FDTD) method is a weakly conditionally stable finite-difference time-domain (FDTD) method that has attracted much attention in recent years. However due to the dispersion media such as water, soil, plasma, biological tissue, optical materials, etc., the application of the HIE-FDTD method is still relatively limited. Therefore, in this paper, the HIE-FDTD method was extended to solve typical dispersion media by combining the Drude, Debye, and Lorentz models with hybrid implicit–explicit difference techniques. The advantage of the presented method is that it only needs to solve a set of equations, and then different dispersion media including water, soil, plasma, biological tissue, and optical materials can be analyzed. The convolutional perfectly matched layer (CPML) boundary condition was introduced to truncate the computational domain. Numerical examples were used to validate the absorbing performance of the CPML boundary and prove the accuracy and computational efficiency of the dispersion HIE-FDTD method proposed in this paper. The simulated results showed that the dispersion HIE-FDTD method could not only obtain accurate calculation results, but also had a much higher computational efficiency than the finite-difference time-domain (FDTD) method. Full article

It is of great technological importance in the field of plasmonic color generation to establish and understand the relationship between optical responses and the reflectance of metallic nanoparticles. Previously, a series of indium nanoparticle ensembles were fabricated using electron beam evaporation and inspected using spectroscopic ellipsometry (SE). The multi-oscillator Lorentz–Drude model demonstrated the optical responses of indium nanoparticles with different sizes and size distributions. The reflectance spectra and colorimetry characteristics of indium nanoparticles with unimodal and bimodal size distributions were interpreted based on the SE analysis. The trends of reflectance spectra were explained by the transfer matrix method. The effects of optical constants n and k of indium on the reflectance were demonstrated by mapping the reflectance contour lines on the n-k plane. Using oscillator decomposition, the influence of different electron behaviors in various indium structures on the reflectance spectra was revealed intuitively. The contribution of each oscillator on the colorimetry characteristics, including hue, lightness and saturation, were determined and discussed from the reflectance spectral analysis. Full article

In this work, we proposed a method for creating an Ag/Si composite structure consisting of an array of vertical silicon nanowires (SiNWs) decorated with silver nanoparticles (AgNPs). A two-stage metal-assisted chemical etching of Si was used to obtain the SiNW array, and atomic layer deposition was used to fabricate the AgNPs. A uniform distribution of AgNPs along the SiNW height was achieved. The measured characteristics by spectroscopic ellipsometry directly established the presence of AgNPs deposited on the SiNWs. The height of the sublayers and the fractions of Si and Ag in them were determined using the multilayer model and the effective Bruggeman medium approximation in the interpretation of the experimental data. For AgNP layers deposited on an Si wafer surface, the thickness (from 2.3 to 7.8 nm) and complex dielectric functions were verified within the framework of the Drude–Lorentz model. The optical properties of Ag/SiNW structures with complex spatial geometry were simulated in the COMSOL Multiphysics software. The expected localization of the electric field on the surface and near the AgNP was observed as a result of the plasmon resonance excitation. The calculated enhancement factor reached 10¹⁰, which indicates the possibility of using such structures as substrates for surface-enhanced Raman scattering. Full article

A pellicle is a thin membrane structure that protects an extreme ultraviolet (EUV) mask from contamination during the exposure process. However, its limited transmittance induces unwanted heating owing to the absorption of EUV photons. The rupture of the EUV pellicle can be avoided by improving its thermal stability, which is achieved by improving the emissivity of the film. However, the emissivity data for thin films are not easily available in the literature, and its value is very sensitive to thickness. Therefore, we investigated the dependence of emissivity on structural parameters, such as thickness, surface roughness, and grain size. We found a correlation between resistivity and emissivity using theoretical and experimental approaches. By changing the grain size of the Ru thin film, the relationship between resistivity and emissivity was experimentally verified and confirmed using the Lorentz–Drude model. Finally, we present a method to develop an EUV pellicle with better thermal stability that can withstand high-power EUV light sources. Full article