Search Results (18)

Multimode VCSELs coupled into waveguides can be a practical path toward realizing commercially viable photonic interposer chips. The experimental coupling of multimode VCSEL light to a non-silicon waveguide fabricated using a CMOS-compatible process is demonstrated. The GaP prism was tested and adopted as a coupling method. Both conventional and cavity-type optical waveguides, fabricated from CMOS-compatible PECVD SiO₂, Si₃N₄, and SiO_xN_y materials, were evaluated. The average propagation loss transmitted through the cavity-type waveguide was measured as 0.444 dB/cm. A polyimide micro-lens, cavity-type waveguide, and a GaP prism coupler are developed to inject the multimode VCSEL light into the waveguide measuring the net coupling loss of 0.762 dB. The packaged size of VCSEL has an area of 0.4 mm² and a height of 0.64 mm. MUX/DeMUX was designed on the bottom of the prism. A light source, a modulator, and MUX/DeMUX are all located in the same area of the prism bottom in VCSEL-based interconnections. Full article

An electrically injected vertical-cavity surface-emitting laser (VCSEL) with quantum-well-embedded InGaN quantum dots (QDs) as the active region was designed. The InGaN QD size and cavity length were optimized using PICS3D simulation software to achieve a high-performance InGaN QD-embedded VCSEL. A comparative analysis between the InGaN QD VCSEL and the traditional InGaN quantum well VCSEL was conducted, and the results demonstrated that the InGaN QD VCSEL achieved higher stimulated recombination radiation and internal quantum efficiency. The threshold current was reduced to 4 mA, corresponding to a threshold current density of 5.1 kA/cm², and the output power reached 4.4 mW at an injection current of 20 mA. A stable single-longitudinal-mode output was also achieved with an output wavelength of 436 nm. The proposed novel quantum-well-embedded QD active-region VCSEL was validated through theoretical simulations, confirming its feasibility. This study provides theoretical guidance and key epitaxial structural parameters for preparing high-performance VCSEL epitaxial materials. Full article

Vertical-cavity surface emitting lasers in UVA band (UVA VCSELs) operating at a central wavelength of 395 nm are designed by employing PICS3D(2021) software. The simulation results indicate that the thickness of the InGaN quantum well and GaN barrier layers affect the emission efficiency of UVA VCSELs greatly, suggesting an optimal thicknesses of 2.2 nm for the well layer and 2.7 nm for the barrier layer. Additionally, an overall consideration of threshold current, series resistance, photoelectric conversion efficiency, and optical output power results in the optimized thickness of the ITO current spreading layer, ~20 nm. Furthermore, by employing a five-pair Al_0.15Ga_0.85N/GaN multi-quantum barrier electron blocking layer (EBL) instead of a single Al_0.2Ga_0.8N EBL, the device shows a ~51% enhancement in the optical output power and a ~48% reduction in the threshold current. The number of distributed Bragg reflector (DBR) pairs also plays crucial roles in the device’s photoelectric performance. The device designed in this study demonstrates a minimum lasing threshold of 1.16 mA and achieves a maximum wall plug efficiency of approximately 5%, outperforming other similar studies. Full article

This article presents the results of a numerical analysis of a nitride-based vertical-cavity surface-emitting laser (VCSEL). The analyzed laser features an upper mirror composed of a monolithic high-contrast grating (MHCG) and a dielectric bottom mirror made of SiO₂ and Ta₂O₅ materials. The emitter was designed for light emission at a wavelength of 403 nm. We analyze the influence of the size of the dielectric bottom mirrors on the operation of the laser, including its power–current–voltage (LIV) characteristics. We also study the effect of changing the electrical aperture radius (active area dimensions). We demonstrate that the appropriate selection of these two parameters enables the temperature inside the laser to be reduced, lowering the laser threshold current and increasing its optical power output significantly. Full article

We propose a highly polarized vertical-cavity surface-emitting laser (VCSEL) consisting of staggered InGaN multiple quantum wells (MQWs), with the resonance cavity and polarization enabled by a bottom nanoporous (NP) n-GaN distributed Bragg reflectors (DBRs), and top TiO₂ high-index contrast gratings (HCGs). Optoelectronic simulations of the 612 nm VCSEL were systematically and numerically investigated. First, we investigated the influences of the NP DBR and HCG geometries on the optical reflectivity. Our results indicate that when there are more than 17 pairs of NP GaN DBRs with 60% air voids, the reflectance can be higher than 99.7%. Furthermore, the zeroth-order reflectivity decreases rapidly when the HCG’s period exceeds 518 nm. The optimal ratios of width-to-period (52.86 ± 1.5%) and height-to-period (35.35 ± 0.14%) were identified. The staggered MQW design also resulted in a relatively small blue shift of 5.44 nm in the emission wavelength under a high driving current. Lastly, we investigated the cavity mode wavelength and optical threshold gain of the VCSEL with a finite size of HCG. A large threshold gain difference of approximately 67.4–74% between the 0th and 1st order transverse modes can be obtained. The simulation results in this work provide a guideline for designing red VCSELs with high brightness and efficiency. Full article

A detailed experimental analysis of the impact of device topology on the performance of 1550 nm VCSELs with an active region based on thin InGaAs/InAlGaAs quantum wells and a composite InAlGaAs buried tunnel junction is presented. The high-speed performance of the lasers with L-type device topology (with the largest double-mesa sizes) is mainly limited by electrical parasitics showing noticeable damping of the relaxation oscillations. For the S-type device topology (with the smallest double-mesa sizes), the decrease in the parasitic capacitance of the reverse-biased p⁺n-junction region outside the buried tunnel junction region allowed to raise the parasitic cutoff frequency up to 13–14 GHz. The key mechanism limiting the high-speed performance of such devices is thus the damping of the relaxation oscillations. VCSELs with S-type device topology demonstrate more than 13 GHz modulation bandwidth and up to 37 Gbps nonreturn-to-zero data transmission under back-to-back conditions at 20 °C. Full article

We report long-cavity (60.5 λ) GaN-based vertical-cavity surface-emitting lasers with a topside monolithic GaN concave mirror, a buried tunnel junction current aperture, and a bottomside nanoporous GaN distributed Bragg reflector. Under pulsed operation, a VCSEL with a 9 µm aperture had a threshold current density of 6.6 kA/cm², a differential efficiency of 0.7%, and a maximum output power of 290 µW for a lasing mode at 411 nm and a divergence angle of 8.4°. Under CW operation, the threshold current density increased to 7.3 kA/cm², the differential efficiency decreased to 0.4%, and a peak output power of 130 µW was reached at a current density of 23 kA/cm². Full article

In this paper, we introduce how gallium nitride-based (GaN-based) VCSELs with curved mirrors have evolved. The discussion starts with reviewing the fundamentals of VCSELs and GaN-based materials and then introducing the curved-mirror cavity’s principle and history and the latest research where the structure is applied to GaN-based materials to form VCSELs. We prepared these parts so that readers understand how VCSELs with this cavity work and provide excellent characteristics such as efficiency, life, stabilized mode behavior, etc. Finally, we discussed the challenges and prospects of these devices by touching on their potential applications. Full article

We propose an all-monolithically integrated self-scanning addressable vertical-cavity surface-emitting laser array for time-of-flight measurement. Some advantages of addressable VCSELs for ToF measurement applications include large reductions in power consumption, heat generation, multi-pass noise, and flare noise. In this paper, we discuss the characteristics of the proposed self-scanning addressable VCSEL array. All layers in the epilayer structure of the proposed VCSEL array were formed at once by metal-organic chemical vapor deposition. The device consists of an (Al)GaAs-based thyristor and a conventional top-emitting 940-nm oxide-confined VCSEL on an n-type GaAs substrate. The array contained 12 blocks (4 × 3) that have more than 40 emitters each. The device required only four signals from a field-programmable gate array to select the emitting blocks and one emission signal from a conventional VCSEL driver, even for arrays containing hundreds of blocks. The proposed module is capable of one-block sequential emission, parallel emission from several blocks, and emission from all blocks. The rise and fall times of the fabricated VCSEL array were observed to be 200 and 400 ps, respectively, for each emission mode. The influence of flare noise from an obstacle in front of the camera was dramatically reduced by avoiding emission to the obstacle. Full article

This paper attempts to describe a laser diode driver circuit using the depletion mode gallium nitride high electron mobility transistor (D-mode GaN HEMT) to generate nanosecond pulses at a repetition rate up to 10 MHz from the vertical-cavity surface-emitting laser (VCSEL). The feature of this driver circuit is a large instantaneous laser power output designed in the most efficient way. The design specifications include a pulse duration between 10 ns and 100 ns and a peak power up to above 100 W. The pulsed laser diode driver uses the D-mode GaN HEMT, which has very small C_oss difference between turn-on and turn-off states. The analysis is according to a laser diode model that is adjusted to match the VCSEL, made in National Yang Ming Chiao Tung University (NYCU). A design guide is summarized from the derivations and analysis of the proposed laser diode driver. According to the design guide, we selected the capacitor, resistor, and diode components to achieve 10 ns to 100 ns pulse duration for laser lighting. The experiment demonstrated that the maximum power-to-light efficiency can be as high as 86% and the maximum peak power can be 150 W, which matches the specifications of certain applications such as light detection and ranging (LiDAR). Full article

Since the first demonstration of (Al, In, Ga)N-based blue vertical-cavity surface-emitting lasers (VCSELs) in 2008, the maximum output power (P_max) and threshold current density (J_th) has been improved significantly after a decade of technology advancements. This article reviewed the key challenges for the realization of VCSELs with III-nitride materials, such as inherent polarization effects, difficulties in distributed Bragg’s reflectors (DBR) fabrication for a resonant cavity, and the anti-guiding effect due to the deposited dielectrics current aperture. The significant tensile strain between AlN and GaN hampered the intuitive cavity design with two epitaxial DBRs from arsenide-based VCSELs. Therefore, many alternative cavity structures and processing technologies were developed; for example, lattice-matched AlInN/GaN DBR, nano-porous DBR, or double dielectric DBRs via various overgrowth or film transfer processing strategies. The anti-guiding effect was overcome by integrating a fully planar or slightly convex DBR as one of the reflectors. Special designs to limit the emission polarization in a circular aperture were also summarized. Growing VCSELs on low-symmetry non-polar and semipolar planes discriminates the optical gain along different crystal orientations. A deliberately designed high-contrast grating could differentiate the reflectivity between the transverse-electric field and transverse-magnetic field, which restricts the lasing mode to be the one with the higher reflectivity. In the future, the III-nitride based VCSEL shall keep advancing in total power, applicable spectral region, and ultra-low threshold pumping density with the novel device structure design and processing technologies. Full article

The vertical-cavity surface-emitting laser (VCSEL) has unique advantages over the conventional edge-emitting laser and has recently attracted a lot of attention. However, the output power of GaN-based VCSEL is still low due to the large electron leakage caused by the built-in polarization at the heterointerface within the device. In this paper, in order to improve the output power, a new structure of p-type composition-graded Al_xGa_1−xN electron blocking layer (EBL) is proposed in the VCSEL, by replacing the last quantum barrier (LQB) and EBL in the conventional structure. The simulation results show that the proposed EBL in the VCSEL suppresses the leaking electrons remarkably and contributes to a 70.6% increase of the output power, compared with the conventional GaN-based VCSEL. Full article

In this paper, we consider several designs for nitride-based vertical-cavity surface-emitting lasers (VCSELs) with a top semiconductor-metal subwavelength grating (SMSG) as the facet mirror. The constructions of the bottom distributed Bragg reflectors (DBRs) used in the VCSEL designs were inspired by devices demonstrated recently by several research groups. A multiparameter numerical analysis was performed, based on self-consistent thermal and electrical simulations. The results show that, in the case of small aperture VCSEL designs, dielectric-based DBRs with metallic or GaN channels enable equally efficient heat dissipation to designs with monolithically integrated DBRs. In the case of broad aperture designs enabled by SMSGs, monolithically integrated DBRs provide much more efficient heat dissipation in comparison to all other considered designs. Full article

A 365-nm UV LED was fabricated based on embedded nanoporous AlGaN distributed Bragg reflectors (DBR) by electrochemical etching. The porous DBR had a reflectance of 93.5% at the central wavelength of 365 nm; this is the highest value of porous AlGaN DBRs below 370 nm which has been reported so far. An innovative two-step etching method with a SiO₂ sidewall protection layer (SPL) was proposed to protect the n-AlGaN layer and active region of UV LED from being etched by the electrolyte. The DBR-LED with SPL showed 54.3% improvement of maximal external quantum efficiency (EQE) and 65.7% enhancement of optical power at 100 mA without any degeneration in electrical properties, compared with the un-etched standard LED sample. This work has paved the way for the application of electrically-pumped UV LEDs and VCSELs based on nanoporous AlGaN DBRs. Full article

A distributed Bragg reflector (DBR) is a key building block in the formation of semiconductor microcavities and vertical cavity surface emitting lasers (VCSELs). The success in epitaxial GaAs DBR mirrors paved the way for the ubiquitous deployment of III-V VCSELs in communication and mobile applications. However, a similar development of GaN-based blue VCSELs has been hindered by challenges in preparing DBRs that are mass producible. In this article, we provide a review of the history and current status of forming DBRs for GaN VCSELs. In general, the preparation of DBRs requires an optimization of epitaxy/fabrication processes, together with trading off parameters in optical, electrical, and thermal properties. The effort of epitaxial DBRs commenced in the 1990s and has evolved from using AlGaN, AlN, to using lattice-matched AlInN with GaN for DBRs. In parallel, dielectric DBRs have been studied since 2000 and have gone through a few design variations including epitaxial lateral overgrowth (ELO) and vertical external cavity surface emitting lasers (VECSEL). A recent trend is the use of selective etching to incorporate airgap or nanoporous GaN as low-index media in an epitaxial GaN DBR structure. The nanoporous GaN DBR represents an offshoot from the traditional epitaxial approach and may provide the needed flexibility in forming manufacturable GaN VCSELs. The trade-offs and limitations of each approach are also presented. Full article