Search Results (49)

Monolayer (ML) molybdenum disulfide (MoS₂) is a typical valleytronic material which has important applications in, for example, polarization optics and information technology. In this study, we examine the effect of continuous wave (CW) laser pumping on the basic optoelectronic properties of ML MoS₂ placed on a sapphire substrate, where the pump photon energy is larger than the bandgap of ML MoS₂. The pump laser source is provided by a compact semiconductor laser with a 445 nm wavelength. Through the measurement of THz time-domain spectroscopy, we obtain the complex optical conductivity for ML MoS₂, which are found to be fitted exceptionally well with the Drude–Smith formula. Therefore, we expect that the reduction in conductivity in ML MoS₂ is mainly due to the effect of electronic backscattering or localization in the presence of the substrate. Meanwhile, one can optically determine the key electronic parameters of ML MoS₂, such as the electron density n_e, the intra-band electronic relaxation time τ, and the photon-induced electronic localization factor c. The dependence of these parameters upon CW laser pump intensity is examined here at room temperature. We find that 445 nm CW laser pumping results in the larger n_e, shorter τ, and stronger c in ML MoS₂ indicating that laser excitation has a significant impact on the optoelectronic properties of ML MoS₂. The origin of the effects obtained is analyzed on the basis of solid-state optics. This study provides a unique and tractable technique for investigating photo-excited carriers in ML MoS₂. Full article

Terahertz (THz) metamaterials based on phase-change materials (PCMs) offer promising approaches to the dynamic modulation of electromagnetic responses. In this study, we design and experimentally demonstrate a tunable THz metamaterial composed of a symmetric split-ring resonator (SRR) pair, with the left halves covered by a 35 nm thick epitaxial vanadium dioxide (VO₂) film, enabling the simultaneous exploitation of both permittivity- and conductivity-induced modulation mechanisms. During the metal–insulator transition (MIT) of VO₂, cooperative changes in permittivity and conductivity lead to the excitation, redshift, and eventual disappearance of a quasi-bound state in the continuum (QBIC) resonance. Finite element simulations, using optical parameters of VO₂ film defined by the Drude–Smith model, predict the evolution of the transmission spectra well. These results indicate that the permittivity change originating from mesoscopic carrier confinement is a non-negligible factor in THz metamaterials hybridized with VO₂ film and also reveal the potential for developing reconfigurable THz metamaterials based on the dielectric modulation effects of VO₂ film. Full article

Tantalum is extensively used in inertial confinement fusion research for targets in radiation transport experiments, hohlraums in magnetized fusion experiments, and lining foams for hohlraums to suppress wall motions. To comprehend the physical processes associated with these applications, detailed information regarding the ionization composition and electrical conductivity of tantalum plasma across a wide range of densities and temperatures is essential. In this study, we calculate the densities of ionization species and the electrical conductivity of partially ionized, nonideal tantalum plasma based on a simplified theoretical model that accounts for high ionization states up to the atomic number of the element and the lowering of ionization energies. A comparison of the ionization compositions between tantalum and copper plasmas highlights the significant role of ionization energies in determining species populations. Additionally, the average electron–neutral momentum transfer cross-section significantly influences the electrical conductivity calculations, and calibration with experimental measurements offers a method for estimating this atomic parameter. The impact of electrical conductivity in the intermediate-density range on the laser absorption coefficient is discussed using the Drude model. Full article

In this research, Hall effect experiments and optical fittings were mainly conducted to elucidate the effect of hydrogen annealing on the electronic properties of polycrystalline Al-doped Zinc Oxide thin films by distinguishing the scattering by ion impurities and the scattering by grain boundaries. By comparing the carrier density and those mobilities of H₂-annealed samples with Ar-annealed samples, the effect of H₂ annealing was highlighted. AZO thin films were prepared on the quartz glass substrate at R.T. by an RF magnetron sputtering method, and the carrier density was controlled by changing the number of Al chips on the Zn target. After fabricating them, they were post-annealed in hydrogen or argon gas. Optical fitting was based on the Drude model using the experimental data of Near-Infrared spectroscopy, and the mobility at grain boundaries was analyzed by Seto’s theory. Other optical and crystalline properties were also checked by SEM, EDX, XRD and profilometer. It is indicated that the H₂ annealing would improve both carrier density and mobility. The analysis referring to Seto’s theory implied that the improvement of mobility was caused by the carrier generation from introduced hydrogen atoms both at the grain boundary and its intragrain region. Furthermore, the effect of H₂ annealing is relatively pronounced especially in low-doped region, which implies that Al and H have some interaction in AZO thin film. The interaction between Al and H in AZO thin film is still not confirmed, but this result implied that this interaction negatively affects the mobility at grain boundary. Full article

We studied relaxation processes in heavily doped two-dimensional Dirac systems associated with electron scattering by acoustic and optical phonons and by static disorder. The frequency dependence of the real and imaginary parts of the relaxation function is calculated for different temperatures. The two-component low-frequency dynamical conductivity is found to be strongly dependent on temperature. At low temperatures, the imaginary part of the zero-frequency relaxation function and the DC resistivity are characterized by the scaling law $a{T}^x$ with the exponent x between 2.5 and 3. Full article

Percolating composites exhibiting negative permittivity have garnered considerable attention due to their promising applications in the realm of electromagnetic shielding, innovative capacitance devices, coil-less inductors, etc. Nano carbon powder/polyvinylidene fluoride (CP/PVDF) percolating composites were fabricated that exhibit Drude-type negative-permittivity behavior upon reaching the CP percolation threshold. This phenomenon is attributed to the formation of a plasmonic state within the interconnected CP network, enabling the delocalization of electrons under the alternating electric field. Furthermore, a significant (nearly two orders of magnitude) increase in the conductivity of sample is observed at a CP content of 12.5 wt%. This abrupt change coincides with the percolation phenomenon, suggesting a transition in the conduction mechanism. To elucidate this behavior, comprehensive analyses of the phase composition, microstructure, AC conductivity, and relative permittivity were performed. Additionally, the sample containing 5 wt% CP exhibits a remarkably high permittivity of 31.5, accompanied by a relatively low dielectric loss (tanδ < 0.2). The findings expand the potential applications of PVDF, while the fabricated percolating composites hold promise for electromagnetic shielding, antennas, and other electromagnetic devices. Full article

In this study, we explored the manipulation of optical properties in the terahertz (THz) frequency band of radio-frequency (RF) sputtered indium tin oxide (ITO) thin films on highly resistive silicon substrate by rapid thermal annealing (RTA). The optical constants of as-deposited and RTA-processed ITO films annealed at 400 °C, 600 °C and 800 °C are determined in the frequency range of 0.2 to 1.0 THz. The transmittance can be changed from ~27% for as-deposited to ~10% and ~39% for ITO films heat-treated at different annealing temperatures (T_a’s). Such variations of optical properties in the far infrared for the samples under study are correlated with their mobility and carrier concentration, which are extracted from Drude–Smith modeling of THz conductivity with plasma frequency, scattering time and the c-parameters as fitting parameters. Resistivities of the films are in the range of 10⁻³ to 10⁻⁴ Ω-cm, confirming that annealed ITO films can potentially be used as transparent conducting electrodes for photonic devices operating at THz frequencies. The highest mobility, μ = 47 cm²/V∙s, with carrier concentration, N_c = 1.31 × 10²¹ cm⁻³, was observed for ITO films annealed at T_a = 600 °C. The scattering times of the samples were in the range of 8–21 fs, with c-values of −0.63 to −0.87, indicating strong backscattering of the carriers, mainly by grain boundaries in the polycrystalline film. To better understand the nature of these films, we have also characterized the surface morphology, microscopic structural properties and chemical composition of as-deposited and RTA-processed ITO thin films. For comparison, we have summarized the optical properties of ITO films sputtered onto fused silica substrates, as-deposited and RTA-annealed, in the visible transparency window of 400–800 nm. The optical bandgaps of the ITO thin films were evaluated with a Tauc plot from the absorption spectra. Full article

We investigate emergent conductive phenomena triggered by collinear antiferromagnetic orderings. We show that an up-down-zero spin configuration in a triangle cluster leads to linear and nonlinear spin conductivities even without the relativistic spin–orbit coupling; the linear spin conductivity is Drude-type, while the nonlinear spin conductivity has Hall-type characterization. We demonstrate the emergence of both spin conductivities in a breathing kagome system consisting of a triangle cluster. The nonlinear spin conductivity becomes larger than the linear one when the Fermi level lies near the region where a small partial band gap opens. Our results indicate that collinear antiferromagnets with triangular geometry give rise to rich spin conductive phenomena. Full article

Tunability of properties is one of the most important features of 2D materials, among which graphene is attracting the most attention due to wide variety of its possible applications. Here, we demonstrated that the carrier concentration in graphene can be efficiently tuned by the material of the dielectric substrate on which it resides. To this end, we fabricated samples of CVD-grown graphene transferred onto silicon wafers covered with alumina, titanium dioxide, and silicon dioxide. We measured the transmission spectra of these samples using a time-domain terahertz spectrometer and extracted the Drude frequency-dependent graphene conductivity. We found that the sheet resistance of graphene is strongly affected by the underlying dielectric material, while the carrier scattering time remains the same. The carrier concentration value was found to range from $7\times {10}^{11}/{\mathrm{c}\mathrm{m}}^2$ in the case of alumina and $4.5\times {10}^{12}/{\mathrm{c}\mathrm{m}}^2$ in the case of titanium dioxide. These estimations are consistent with what can be extracted from the position of the G-peak in the Raman spectra of graphene. Our results show a way to control the graphene doping level in applications where it does not have to be adjusted. Full article

High-radio-frequency (RF) conductivity is required in advanced electronic materials to reduce the electromagnetic loss and power dissipation of electronic devices. Graphene/copper (Gr/Cu) multilayers possess higher conductivity than silver under direct current conditions. However, their RF conductivity and detailed mechanisms have rarely been evaluated at the micro scale. In this work, the RF conductivity of copper–copper (P-Cu), monolayer-graphene/copper (S-Gr/Cu), and multilayer-graphene/copper (M-Gr/Cu) multilayer structures were evaluated using scanning microwave impedance microscopy (SMIM) and dielectric resonator technique. The results indicated that the order of RF conductivity was M-Gr/Cu < P-Cu < S-Gr/Cu at 3 GHz, contrasting with P-Cu < M-Gr/Cu < S-Gr/Cu at DC condition. Meanwhile, the same trend of M-Gr/Cu < P-Cu < S-Gr/Cu was also observed using the dielectric resonator technique. Based on the conductivity-related Drude model and scattering theory, we believe that the microwave radiation can induce a thermal effect at S-Gr/Cu interfaces, leading to an increasing carrier concentration in S-Gr. In contrast, the intrinsic defects in M-Gr introduce additional carrier scattering, thereby reducing the RF conductivity in M-Gr/Cu. Our research offers a practical foundation for investigating conductive materials under RF conditions. Full article

In a conducting medium held at finite temperature, free carriers perform Brownian motion and generate fluctuating electromagnetic fields. In this paper, an averaged Lorentz force density is computed that turns out to be nonzero in a thin subsurface layer, pointing towards the surface, while it vanishes in the bulk. This is an elementary example of rectified fluctuations, similar to the Casimir force or radiative heat transport. The results obtained also provide an experimental way to distinguish between the Drude and so-called plasma models. Full article

We consider the two planes at zero temperature with isotropic conductivity that are in relative lateral motion with velocity v and interplane distance a. Two models of conductivity are taken into account—the constant and frequency-dependent Drude models. The normal (perpendicular to planes) Casimir force is analyzed in detail for two systems—(i) two planes with identical conductivity and (ii) one plane that is a perfect metal. The velocity correction to the Casimir energy, ${\Delta }_v\mathcal{E}$$\propto$$v^2$, for small enough velocities is used for all considered cases. In the case of constant conductivity, $\eta$, the energy correction is ${\Delta }_v\mathcal{E}$$\propto$$\eta /a^3{\left(v/\eta \right)}^2$ for $v\ll \eta \ll 1$. Full article

With the increasing popularity of wearable devices, flexible electronics with a negative permittivity property have been widely applied to wearable devices, sensors, and energy storage. In particular, a low-frequency dispersion negative permittivity in a wide frequency range can effectively contribute to the stable working performance of devices. In this work, polyvinylidene fluoride (PVDF) was selected as the flexible matrix, and copper nanowires (CuNWs) were used as the conductive functional filler to prepare a flexible CuNWs/PVDF composite film with a low-frequency dispersion negative permittivity. As the content of CuNWs increased, the conductivity of the resulting composites increased sharply and presented a metal-like behavior. Moreover, the negative permittivity consistent with the Drude model was observed when CuNWs formed a percolative network. Meanwhile, the negative permittivity exhibited a low-frequency dispersion in the whole test frequency range, and the fluctuation of the permittivity spectra was relatively small (−760 to −584) at 20 kHz–1 MHz. The results revealed that the high electron mobility of CuNWs is reasonable for the low-frequency dispersion of negative permittivity. CuNWs/PVDF composite films with a frequency-independent negative permittivity provide a new idea for the development of flexible wearable electronic devices. Full article

Silver (Ag) thin films have garnered significant attention due to their unique optical properties. This paper systematically investigates the optical characteristics of Ag films prepared using the electron beam evaporation method. The investigation was conducted using spectroscopic ellipsometry and covers a broad wavelength range of 1679 nm to 36 µm (0.738–0.034 eV), spanning from near-infrared to far-infrared regions. Optical and dispersion models were developed to analyze the impacts of Ag nanostructures on the complex refractive indices, dielectric functions, and reflectance. The results indicate that Ag particles and coalescence films exhibit non-metallic and low absorption properties, while Ag percolation and continuous films present a typical Drude model. The reflectance of Ag films increases as the film coverage ratio increases, and it can reach close to 100% in continuous film. Additionally, a non-destructive, non-contact, and vacuum-free means of confirming the percolation threshold of Ag films was proposed based on the slope of the imaginary part curve. This work is useful to guide simulations and provide a basis for the applications of Ag films in different fields. Full article

Optical absorption spectra of 9 MeV electron-irradiated GaSe crystals were studied. Two absorption bands with the low-photon-energy threshold at 1.35 and 1.73 eV (T = 300 K) appeared in the transparency region of GaSe after the high-energy-electron irradiation. The observed absorption bands were attributed to the defect states induced by Ga vacancies in two charge states, having the energy positions at 0.23 and 0.61 eV above the valence band maximum at T = 300 K. The optical pump-terahertz probe technique (OPTP) was employed to study the dark and photoexcited terahertz conductivity and charge carrier recombination dynamics at two-photon excitation of as-grown and 9 MeV electron-irradiated GaSe crystals. The measured values of the differential terahertz transmission at a specified photoexcitation condition were used to extract the terahertz charge carrier mobilities. The determined terahertz charge carrier mobility values were ~46 cm²/V·s and ~14 cm²/V·s for as-grown and heavily electron-irradiated GaSe crystals, respectively. These are quite close to the values determined from the Lorentz–Drude–Smith fitting of the measured dielectric constant spectra. The photo-injection-level-dependent charge carrier lifetimes were determined from the measured OPTP data, bearing in mind the model injection-level dependencies of the recombination rates governed by interband and trap-assisted Auger recombination, bulk and surface Shockley–Read–Hall (SRH) recombination and interband radiative transitions in the limit of a high injection level. It was found that GaSe possesses a long charge carrier lifetime (a~1.9 × 10⁻⁶ ps⁻¹, b~2.7 × 10⁻²¹ cm³ps⁻¹ and c~1.3 × 10⁻³⁷ cm⁶ps⁻¹), i.e., τ~0.53 μs in the limit of a relatively low injection, when the contribution from SRH recombination is dominant. The electron irradiation of as-grown GaSe crystals reduced the charge carrier lifetime at a high injection level due to Auger recombination through radiation-induced defects. It was found that the terahertz spectra of the dielectric constants of as-grown and electron-irradiated GaSe crystals can be fitted with acceptable accuracy using the Lorentz model with the Drude–Smith term accounting for the free-carrier conductivity. Full article