Search Results (113)

The present study explores the production of metallized titanomagnetite briquettes, with a view to addressing two key issues. Firstly, it seeks to address the growing shortage of high-quality iron-bearing raw materials. Secondly, it looks at how to meet the increasingly stringent environmental constraints. The conventional blast-furnace treatment of titanomagnetite is hindered by the formation of refractory Ti-rich slags. It is hereby proposed that a single-cycle briquetting process in conjunction with a thermal reduction route should be utilized. This approach enables precise regulation of the Fe/flux ratio. Experiments were conducted on a low-grade titanomagnetite concentrate (68.5% Fe) from the Pervouralsk deposit (Russia). Cylindrical briquettes (D 15–20 mm, h 8–10 mm) were subjected to a pressure of 300 MPa during the pressing process, with the utilization of diverse binders comprising rubber cement, CaO, graphite + water, and basic oxygen-furnace (BOF) slag + sodium silicate. Following an oxidative pre-heating process at 1300 °C for two hours, followed by a gas-based reduction process at 1050 °C for three hours, with a CO/N₂ ratio of 90/10, the products demonstrated an oxidation rate of 85–95% and a cold compression strength of 16–80 MPa. The highest observed strength (80 MPa) was obtained with a binder comprising CaO·MgO·2SiO₂ (diopside/merwinite), which forms a low-viscosity melt, fills 90% of pores and crystallizes as acicular Mg-SFCA-I during cooling. Conversely, the CaO·TiO₂ and FeO·TiO₂ + Fe₃C associations yield brittle structures and a maximum strength of 16 MPa. The optimum briquette (0.55% CaO, D/H = 20/10 mm) exhibited a 95.7% metallization degree, a compressive strength of 48.9 MPa, and dimensional changes within acceptable limits, thus fulfilling the requirements for electric arc furnace feedstock. Further research is required in the form of a full Life Cycle Assessment and pilot-scale testing. However, the results obtained thus far confirm that titanomagnetite briquettes with a binder consisting of CaO, MgO and SiO₂ are a promising alternative to pellets for low-carbon steelmaking. Full article

4H-SiC wafers usually require polishing treatment after slicing to improve the surface quality. However, traditional polishing processes have problems such as low removal efficiency and easy surface damage, which affect the reliability of electronic devices. In this paper, picosecond laser polishing technology is used to study the 4H-SiC wafers after slicing. Numerical models of single-pulse ablation and moving heat source polishing were established to reveal the interaction mechanism between laser and material, including the dynamic evolution of free electron density and the remarkable spatiotemporal non-equilibrium heat transfer characteristics of the electron–lattice system. The sliced 4H-SiC surface with a roughness of 2265 nm was polished by a 1064 nm picosecond laser, and the influence of laser power and scanning speed on the surface quality was systematically studied. By collaboratively optimizing the polishing power and speed, the surface roughness of the sample can be significantly reduced to 207.33 nm (a decrease of 90.85%). The research results indicate that an ultrafast laser is suitable for the pretreatment process of sliced silicon carbide wafers, laying a foundation for further research in the future. This research has a certain research significance for promoting the development of ultrafast laser polishing technology for single crystal silicon carbide wafers and improving the performance and reliability of semiconductor devices. Full article

First examples of mononuclear homoleptic zinc aminopyridinates have been isolated by reacting the sterically bulky deprotonated 2-aminopyridine ligands, N-(2,6-diisopropylphenyl)-[6-(2,6-dimethylphenyl)-pyridine-2-yl]-amine (1) and N-(2,6-diisopropylphenyl)-[6-(2,4,6-triisopropylphenyl)-pyridine-2-yl]-amine (2) with [Zn{N(SiMe₃)₂}₂]. Single crystal X-ray analyses of the zinc bis(aminopyridinate) complexes (3 and 4) reveal two different orientations of the coordinated ligands most probably due to the steric variation of the of the applied ligands. For 3 not only the two ligands show rare head to head arrangement but also one of the ligand exhibit localized and the other ligand delocalized mode of coordination. In 4 the two ligands adopt the head to tail arrangement for the two coordinated aminopyridinato ligands with anionic function localized at the amido nitrogen atom of both the ligands. NMR tube reactions between equimolar ratios of 1 or 2 and [Zn{N(SiMe₃)₂}₂] show the possible synthesis of the mono(aminopyridnate) Zn amide complexes (5 and 6, respectively) in solution phase, however, the corresponding bis(aminopyridinate) Zn complexes are the selective products. Hirshfeld surface analysis and the two-dimensional fingerprint plots indicate that intermolecular H⋯H contacts and H⋯C/C⋯H π-interactions dominate the crystal packing. Full article

To enhance the formation of hydroxyl radicals (•OH) when polishing single crystal silicon carbide (SiC), this study proposes a catalytic-assisted polishing approach based on a Fe₃O₄/ZnO/graphite hybrid system. Firstly, methyl orange degradation experiments were conducted using Fe₃O₄/ZnO/graphite hybrid catalysts. Secondly, a resin-based abrasive tool embedded with the Fe₃O₄/ZnO/graphite hybrid was developed. Subsequently, polishing experiments under dry, water, and hydrogen peroxide conditions were performed based on the abrasive tool. The corresponding surface roughness (Sa) were 26.51 nm, 12.955 nm and 4.593 nm, separately. The material removal rate were 0.733 mg/h (1.586 μm/h), 2.800 mg/h (6.057 μm/h) and 4.733 mg/h (10.239 μm/h), respectively. The results demonstrate that the Fe₃O₄/ZnO/graphite hybrid synergistically enhanced •OH generation through Fenton reactions and tribocatalysis of ZnO. Therefore, the increased •OH productivity contributes to SiC oxidation and SiO₂ removal, improving both polishing efficiency and surface finish. The catalytic-assisted polishing provides a novel approach for the high-efficiency ultra-precision machining for SiC. Full article

Influenza A viruses that cause pandemics, as well as other harmful pathogens (e.g., SARS-CoV-2 variants), are known as the ‘silent bioterrorists’ of the 21st century. Due to high mutability, anti-influenza chemotherapeutic treatment is a vital defense strategy to combat both seasonal and pandemic influenza strains, especially when vaccines fail. Consequently, the development of novel therapies to combat this serious threat is of great concern. Hence, in this study, 3-(2-thienyl) acrylic acid (TA) was converted into amides of anti-influenza drugs (aminoadamantanes and oseltamivir) through TBTU-mediated coupling. The crystal structures of the thienyl-based amide hybrids (TA-Am (1), TA-Rim (2), TA-Os-OEt (3), and TA-OsC (4)) were also investigated using single-crystal X-ray diffraction, powder X-ray diffraction (PXRD), and differential scanning calorimetry (DSC). Moreover, the antiviral activities of the hybrids against influenza virus A/Fort Monmouth/1/1947 (H1N1), clinically isolated influenza strain A/Wuhan/359/1995 (H3N2), and oseltamivir-resistant A/Jinnan/15/2009 (H1N1) were evaluated in vitro. Amongst the tested thienyl-based amides, bisamide 8 (Boc-Os-Hda-TA) exhibited the most potent activity against influenza virus A (A/Wuhan/359/1995) with an IC₅₀ value of 18.52 μg/mL and a selectivity index (SI) = 13.0. Full article

The 1:1 stoichiometric reactions of α-amino isobutyric acid (H₂Aib) and diaminosilanes of the type SiRR′(NR¹R²)₂ (SiMe₂(imidazol-1-yl)₂, SiMe₂(NHnPr)₂, and SiRR′(pyrrolidin-1-yl)₂ with R,R′ = Me,Me, Me,H, Me,Vi, and Et,Et) afforded the pentacoordinate silicon complexes (Aib)SiRR′(HNR¹R²) with the release of one equivalent of HNR¹R². Single-crystal X-ray diffraction analyses confirmed the coordination of the N-donor Lewis base (i.e., imidazole, n-propylamine, and pyrrolidine, respectively) in an axial position of the distorted trigonal-bipyramidal Si-coordination sphere, trans to the carboxylate O atom of the Si-chelating Aib-dianion. The N–H moieties of the adduct-forming Lewis bases are involved in N–H⋯O hydrogen bonds with carboxylate groups of adjacent complex molecules, thus supporting the supramolecular structures of these adducts. The equatorially bound NH group of the Aib-dianion is involved in N–H⋯O hydrogen bonds in most cases, and it gives rise to residual dipolar coupling of the ¹⁴N nucleus with its directly bound atoms C and Si, thus causing characteristic shapes of both the ²⁹Si and ¹³C NMR signals of these two atoms in the solid-state spectra. In contrast to the adduct-formation reactions, the analogous conversion of H₂Aib and SiMe₂(NHtBu)₂ did not afford an amine adduct. Instead, a second equivalent of H₂Aib entered the reaction, and the ionic silicon complex [tBuNH₃]⁺[(Aib)₂SiMe]⁻ was obtained and characterized by crystallography and solution NMR spectroscopy. Full article

Single-crystal 4H silicon carbide (4H-SiC) is a key substrate material for third-generation semiconductor devices, where surface and subsurface integrity critically affect performance and reliability. This study systematically examined the evolution of surface morphology and subsurface damage (SSD) during nanoscratching of 4H-SiC under varying normal loads (0–100 mN) using a nanoindenter equipped with a diamond Berkovich tip. Scratch characteristics were assessed using scanning electron microscopy (SEM), while cross-sectional SSD was characterised via focused ion beam (FIB) slicing and transmission electron microscopy (TEM). The results revealed three distinct material removal regimes: ductile removal below 14.5 mN, a brittle-to-ductile transition between 14.5–59.3 mN, and brittle removal above 59.3 mN. Notably, substantial subsurface damage—including median cracks exceeding 4 μm and dislocation clusters—was observed even within the transition zone where the surface appeared smooth. A thin amorphous layer at the indenter-substrate interface suppressed immediate surface defects but promoted subsurface damage nucleation. Crack propagation followed slip lines or their intersections, demonstrating sensitivity to local stress states. These findings offer important insights into nanoscale damage mechanisms, which are essential for optimizing precision machining processes to minimise SSD in SiC substrates. Full article

The content of modified materials in multicomponent gel phase change materials directly affects their performance characteristics. To investigate the influence of different contents of modified materials on the performance features of Na₂HPO₄·12H₂O-based multicomponent Gel Phase Change Materials, four single factors (Na₂SiO₃·9H₂O, C₃₅H₄₉O₂₉, KCl, and nano-α-Fe₂O₃) and their interactions were selected as influencing factors. Using the Taguchi method with an L₂₇(3¹³) orthogonal array, multi-step melt–blending experiments were conducted to prepare a novel multi-component phase change material. The characteristics of the new multi-component phase change material, including supercooling degree (ΔT), phase change temperature (T_m), latent heat of phase change (ΔH_m), and cooling time (CT), were obtained. In addition, characterization techniques such as DSC, SEM, FT-IR, and XRD were employed to analyze its thermal properties, microscopic morphology, chemical stability, and crystal structure. Based on the experimental results, the signal-to-noise ratio (S/N) was used to rank the influence of each factor on the quality characteristics, and the p-value from analysis of variance (ANOVA) was employed to evaluate the significance of each factor on the performance characteristics. Then, the effects of each significant factor on the characteristics of the multiple gel phase change materials were analyzed in detail, and the optimal mixing ratio of the new multiple gel phase change materials was selected. The results showed that Na₂SiO₃·9H₂O, KCl, and α-Fe₂O₃ were the most critical process parameters. This research work enriches the selection of composite gel phase change materials for solar greenhouses and provides guidance for the selection of different modified material contents using Na₂HPO₄·12H₂O as the starting material. Full article

The crystal–chemical behavior of two layered titanosilicate minerals with porous crystal structures, kupletskite, K₂NaMn₇²⁺Ti₂(Si₄O₁₂)₂O₂(OH)₄F, and kupletskite-(Cs), Cs₂NaMn₇²⁺Ti₂(Si₄O₁₂)₂O₂(OH)₄F, was investigated under high-temperature conditions using single-crystal and powder X-ray diffraction; infrared and optical absorption spectroscopy and electron-microprobe analysis. Both minerals undergo topotactic transformation to dehydroxylated and oxidized high-temperature (HT) modifications at temperature above 500 °C while maintaining the basic bond topology of the astrophyllite structure-type. The high-temperature structures show contraction of the unit-cell parameters similar to that of Fe²⁺-dominant astrophyllite, indicating that Mn²⁺ oxidizes along with Fe²⁺ in M(2)–M(4) sites. The oxidation of Mn²⁺ is confirmed by the increase of the Mn³⁺-related absorption (in optical spectra) that is inversely correlated with the intensity of O–H bands in the infrared spectra. The Fe,Mn-oxidation is also evident by the contraction of the M(2), M(3), and M(4)O₆ octahedra. The M(1)–O bond length increases slightly, indicating a preference for mono- and divalent cations to occupy the M(1) site in the heated structure; this may be due to site-selective oxidation and/or migration of unoxidized cations (as previously shown for lobanovite) to this site. The role of extra framework A-site cations (K, Cs) in thermal expansion of these minerals is discussed. Full article

For solution growth of 6-inch 4H-SiC bulk crystals, the surface step morphology of the crystals grown on Si-face, C-face and ($10\overline{1}\overline{2}$) plane was systematically characterized by laser confocal microscopy. The 2D-nucleation and step-bunching were likely to occur during the 30 h growth on Si-face, leading to a rough surface with a macro-step height over 60 μm. By contrast, the step heights were maintained at 0.1–1 μm during 60 h growth on C-face, exhibiting good morphological stability for long-term growth. Moreover, the SiC crystal grown on the ($10\overline{1}\overline{2}$) plane illustrated its excellence in producing fine steps, which is attributed to the smaller interfacial energy between the solution and ($10\overline{1}\overline{2}$) substrates, suggesting that it offers a better approach to growing SiC single bulk crystals. Full article

Herein, we present hybrid crown ether ligands with siloxane and ethylene oxide units and their coordination with the cations Li⁺, Na⁺, Mg²⁺ and Ca²⁺. The compounds prepared are (SiMe₂O)₂(C₂H₄O)₃ (1, TrEGDS = Triethylenglycoldisiloxane) and (SiMe₂O)₂(C₂H₄O)₄ (2, TeEGDS = Tetraethylenglycoldisiloxane)), as well as the metal complexes [Li(TrEGDS][GaI₄] (3), [Na(TeEGDS)][GaI₄] (4), [Mg(TrEGDS)][GaI₄]₂ (5) and [Ca(TeEGDS)][GaI₄]₂ (6). Single-crystal X-ray diffraction was used to study the prepared complexes and coordination modes in the solid state. Full article

The slip mechanism between the chunk and wafer during high-speed dynamic scanning of the extreme ultraviolet lithography (EUV) motion stage remains unclear. Considering real-machined roughness, molecular dynamics (MD) simulations were performed to investigate the nanotribological behavior of 6H-SiC sliders on single-crystal silicon substrates. The effects of sinusoidal asperity parameters and normal loads on wear and slip were systematically analyzed. Results indicate that, for friction between sinusoidal asperities and ideal flat surfaces, the amplitude of surface parameters exhibits negligible influence on friction. In contrast, reduced normal loads and lower periods significantly increase both friction force and coefficient of friction (COF). Full article

The incorporation of transition metal atoms into [Ge₉] clusters is a widely studied area of Zintl-cluster chemistry. Recently, it was shown that clusters comprising single transition metal atoms in the cluster surface show catalytic properties. Here, we present a synthetic approach to four new compounds comprising silylated Ge₉ clusters with organometallic ruthenium complexes. [η⁵-Ge₉Hyp₃]RuCp* (1), [η¹-Ge₉(Si^tBu₂H)₃]RuCp(PPh₃)₂ (2), and [Hyp₃Ge₉][RuCp(PPh₃)₂(MeCN)] (3b) (Cp = cyclopentadienyl, Cp* = pentamethylcyclopentadienyl, Hyp = Si(SiMe₃)₃, Ph = C₆H₅, ^tBu = tert-butyl) were characterized by means of NMR spectroscopy and single-crystal structure determination. In the case of 2, a new isomer with an approximated C_4v symmetric monocapped square antiprism of nine Ge atoms with an unexpected ligand arrangement comprising three ditertbutylsilane ligands attached to the open square was obtained. [Hyp₃Ge₉][RuCp(PPh₃)₂] (3a) was characterized via NMR spectroscopy and LIFDI mass spectrometry. Overall, we were able to show that the steric demand of the ligands Cp vs. Cp* and hypersilylchloride vs. ditertbutylsilane strongly influence the arrangement of the atoms and ligands on the cluster. In addition, the solvent also affects the cluster, as it appears that the ruthenium atom in 3a dissociates from the cluster surface upon acetonitrile coordination to form 3b. These results show that choosing the right synthetic tools and ligands makes a big difference in the outcome of the metalation reaction. Full article

A recent study reported the rapid growth of SiC single crystals of ~1.5 mm/h using high-purity SiC sources obtained by recycling CVD-SiC blocks used as materials in semiconductor processes. This method has gained attention as a way to improve the productivity of the physical vapor transport (PVT) method, widely used for manufacturing single crystal substrates for power semiconductors. When recycling CVD-SiC blocks by crushing them for use as sources for growing SiC single crystals, the properties and the particle size distribution of the material differ from those of conventional commercial SiC powders, making it necessary to study their effects. Therefore, in this study, SiC single crystals were grown using the PVT method with crushed CVD-SiC blocks of various sizes as the source material, and the growth behavior was analyzed. Simulation results of the temperature distribution in the PVT system confirmed that using large, crushed blocks as the SiC source material generates a greater temperature gradient within the source compared to conventional commercial SiC powder, making it advantageous for rapid growth processes. Additionally, when the large, crushed blocks were vertically aligned, good crystal quality was experimentally achieved at high growth rates, even under non-optimized growth conditions. Full article

This study aims to develop a reference material that enables precise management of dopant distribution in power semiconductors. We thoroughly investigate the structural and surface properties of 4H-silicon carbide (4H-SiC) single crystals implanted without annealing using aluminum (Al) and phosphorus (P) ions. Ion-implanted 4H-SiC was thoroughly evaluated using advanced techniques, including X-ray diffraction (XRD), field emission transmission electron microscopy (FE-TEM), atomic force microscopy (AFM), time of flight medium energy ion scattering (ToF-MEIS), and secondary ion mass spectrometry (SIMS). The evaluated results indicate that, without post-annealing, ion-implanted 4H-SiC can serve as an effective reference material for the precise control of trace elements and the quantitative monitoring of dopant distribution in power semiconductor applications. Full article