Electronics | Highly Cited Papers in 2024 in the “Semiconductor Devices” Section
The “Semiconductor Devices” Section of Electronics (ISSN: 2079-9292) publishes original and significant contributions to the theory and performance of semiconductor devices and related materials. It covers various aspects, including devices, the fabrication process, simulation, quantum devices, hybrid devices, flexible electronic devices, novel semiconductors, semiconductor material, and device physics. We publish reviews and Special Issues that address specific topics in this area of research.
Our readers can enjoy free and unlimited access to the full texts of all of the open access articles published in our journal. We welcome you to read our most highly cited papers published in 2024, which are listed below:
1. “A Brief Review of Single-Event Burnout Failure Mechanisms and Design Tolerances of Silicon Carbide Power MOSFETs”
by Christopher A. Grome and Wei Ji
Electronics 2024, 13(8), 1414; https://doi.org/10.3390/electronics13081414
Available online: https://www.mdpi.com/2079-9292/13/8/1414
2. “Steady-State Temperature-Sensitive Electrical Parameters’ Characteristics of GaN HEMT Power Devices”
by Kaihong Wang, Yidi Zhu, Hao Zhao, Ruixue Zhao and Binxin Zhu
Electronics 2024, 13(2), 363; https://doi.org/10.3390/electronics13020363
Available online: https://www.mdpi.com/2079-9292/13/2/363
3. “Thin Film Semiconductor Metal Oxide Oxygen Sensors: Limitations, Challenges, and Future Progress”
by Wojciech Bulowski, Rafał Knura, Robert P. Socha, Maciej Basiura, Katarzyna Skibińska and Marek Wojnicki
Electronics 2024, 13(17), 3409; https://doi.org/10.3390/electronics13173409
Available online: https://www.mdpi.com/2079-9292/13/17/3409
4. “Ballistic Performance of Quasi-One-Dimensional Hafnium Disulfide Field-Effect Transistors”
by Mislav Matić and Mirko Poljak
Electronics 2024, 13(6), 1048; https://doi.org/10.3390/electronics13061048
Available online: https://www.mdpi.com/2079-9292/13/6/1048
5. “Interface Contact Thermal Resistance of Die Attach in High-Power Laser Diode Packages”
by Liting Deng, Te Li, Zhenfu Wang, Pu Zhang, Shunhua Wu, Jiachen Liu, Junyue Zhang, Lang Chen, Jiachen Zhang, Weizhou Huang et al.
Electronics 2024, 13(1), 203; https://doi.org/10.3390/electronics13010203
Available online: https://www.mdpi.com/2079-9292/13/1/203
6. “Spike Dynamics Analysis in Semiconductor Ring Laser”
by Penghua Mu, Kun Wang, Guopeng Liu, Yiqiao Wang, Xintian Liu, Gang Guo and Guosi Hu
Electronics 2024, 13(2), 260; https://doi.org/10.3390/electronics13020260
Available online: https://www.mdpi.com/2079-9292/13/2/260
7. “Impact of Al Alloying/Doping on the Performance Optimization of HfO2-Based RRAM”
by Huikai He, Xiaobo Yuan, Wenhao Wu, Choonghyun Lee, Yi Zhao and Zongfang Liu
Electronics 2024, 13(12), 2384; https://doi.org/10.3390/electronics13122384
Available online: https://www.mdpi.com/2079-9292/13/12/2384
8. “Control of Threshold Voltage in ZnO/Al2O3 Thin-Film Transistors through Al2O3 Growth Temperature”
by Dongki Baek, Se-Hyeong Lee, So-Young Bak, Hyeongrok Jang, Jinwoo Lee and Moonsuk Yi
Electronics 2024, 13(8), 1544; https://doi.org/10.3390/electronics13081544
Available online: https://www.mdpi.com/2079-9292/13/8/1544