Editor’s Choice Articles

Reported herein are the synthesis and crystal chemistry analysis of the Zintl phase Sr₂₁Cd₄Sb₁₈. Single crystals of this compound were grown using the Sn-flux method, and structural characterization was carried out using single-crystal X-ray diffraction. Crystal data: Monoclinic space group C2/m (No. 12, Z = 4); a = 18.2536(6) Å, b = 17.4018(5) Å, and c = 17.8979(6) Å, β = 92.024(1)°. The structure is based on edge- and corner-shared CdSb₄ tetrahedra, which ultimately form octameric [Cd₈Sb₂₂] fragments, where two symmetry-equivalent subunits are connected via a homoatomic Sb–Sb interaction. The electronic band structure calculations contained herein reveal the emergence of a direct gap between the valence and the conduction bands. Full article

In this study, we investigate the magnetization behavior of coaxial nanowires fabricated through the sol-gel electrospinning method. Our analysis uncovers a significant reduction in coercivity for CoFe${}_2$O${}_4$ nanowires when BaTiO${}_3$ is used as the shell material, effectively transforming them from hard to soft magnetic. This intriguing behavior is attributed to the magnetization reversal effect at the interface between ferromagnetic and paramagnetic regions, and it is also observed in NiFe${}_2$O${}_4$ and Fe${}_2$O${}_3$ nanowires. Surprisingly, introducing a GdBa${}_2$Cu${}_3$O${}_7$ shell induces a similar effect. Additionally, we employ magnetic impedance measurements on the coaxial nanowires, unveiling their potential for magnetic field sensing applications. Full article

Systematic results of lattice dynamical calculations are reported as a function of m and n for the novel (SiC)_m/(GeC)_n superlattices (SLs) by exploiting a modified linear-chain model and a realistic rigid-ion model (RIM). A bond polarizability method is employed to simulate the Raman intensity profiles (RIPs) for both the ideal and graded (SiC)_10-Δ/(Si_0.5Ge_0.5C)_Δ/(GeC)_10-Δ/(Si_0.5Ge_0.5C)_Δ SLs. We have adopted a virtual-crystal approximation for describing the interfacial layer thickness, Δ (≡0, 1, 2, and 3 monolayers (MLs)) by selecting equal proportions of SiC and GeC layers. Systematic variation of Δ has initiated considerable upward (downward) shifts of GeC-(SiC)-like Raman peaks in the optical phonon frequency regions. Our simulated results of RIPs in SiC/GeC SLs are agreed reasonably well with the recent analyses of Raman scattering data on graded short-period GaN/AlN SLs. Maximum changes in the calculated optical phonons (up to ±~47 cm⁻¹) with Δ = 3, are proven effective for causing accidental degeneracies and instigating localization of atomic displacements at the transition regions of the SLs. Strong Δ-dependent enhancement of Raman intensity features in SiC/GeC are considered valuable for validating the interfacial constituents in other technologically important heterostructures. By incorporating RIM, we have also studied the phonon dispersions [${{{\mathsf{\omega }}_{}}_{\mathrm{j}}^{\mathrm{S}\mathrm{L}}}_{}\left(\overrightarrow{\mathbf{q}}\right)$] of (SiC)_m/(GeC)_n SLs along the growth [001] as well as in-plane [100], [110] directions [i.e., perpendicular to the growth]. In the acoustic mode regions, our results of ${{{\mathsf{\omega }}_{}}_{\mathrm{j}}^{\mathrm{S}\mathrm{L}}}_{}\left(\overrightarrow{\mathbf{q}}\right)$ have confirmed the formation of mini-gaps at the zone center and zone edges while providing strong evidences of the anti-crossing and phonon confinements. Besides examining the angular dependence of zone-center optical modes, the results of phonon folding, confinement, and anisotropic behavior in (SiC)_m/(GeC)_n are compared and contrasted very well with the recent first-principles calculations of (GaN)_m/(AlN)_n strained layer SLs. Full article

Several ternary rare-earth metals containing titanium aluminum intermetallics in the RE₂TiAl₃ series (RE = Y, Gd–Lu) have been synthesized from the elements using arc-melting techniques. All compounds crystallize in the trigonal crystal system with rhombohedral space group R3m (Z = 3) and lattice parameters ranging between a = 582–570 and c = 1353–1358 pm. They adopt the Mg₂Ni₃Si-type structure, which is an ordered superstructure of the cubic Laves phase MgCu₂ and has been observed for Al intermetallics for the first time. Tetrahedral [TiAl₃] entities that are connected over all corners form a network where the empty [TiAl₃] tetrahedra exhibit a full Ti/Al ordering based on the single crystal results. The Al atoms are arranged into 6³ Kagomé nets, while the Ti atoms connect these nets over the triangular units. In the cavities of this three-dimensional arrangement, the RE cations can be found forming a distorted diamond-type substructure. Magnetic measurements revealed that Y₂TiAl₃ and Lu₂TiAl₃ are Pauli paramagnetic substances, in line with the metallic character. The other compounds exhibit paramagnetism with antiferromagnetic ordering at a maximum Néel temperature of T_N = 26.1(1) K for Gd₂TiAl₃. Full article