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Fabrication, Modeling and Integration of a Silicon Technology Based Sensor
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Fabrication, Modeling and Integration of a Silicon Technology Based Sensor

A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Physical Sensors".

Deadline for manuscript submissions: closed (31 March 2020) | Viewed by 15303

Special Issue Editor

Prof. Dr. Paddy J. French

E-Mail Website
Guest Editor
Department of Microelectronics, Delft University of Technology, 2628 CD Delft, The Netherlands
Interests: integrated sensor systems; micromachining; in particular for medical and environmental applications
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Silicon has been a key material in IC technology and sensors since the first silicon transistor in 1954. Before then, some transistors had been made in germanium. The development of silicon technology for ICs led to interest in silicon sensors.
In some cases, sensors can be fabricated using 100% standard IC processing. However, in many cases, special steps are required. When integrating sensors with electronics, extra care needs to be taken so that the additional steps do not adversely affect the device operation of either. This may also require additional modeling of the processing, the layers, and the device structure.
This Special Issue aims to highlight the technological advances in silicon sensor technology and modeling. Papers are encouraged on materials that are newer to the integrated sensor world, such as polymers and organic materials. Further, alternative processing steps such as 3D printing, inkjet printing, etc. are welcome. Topics include:

  • Modeling (process, material, and device structure);
  • All areas of technology for silicon-based sensors, including the addition of non-silicon materials;
  • Integration issues.

Prof. Dr. Paddy French
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Sensors is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Sensor technology
  • Modeling
  • Integration issues
  • Materials
  • Non-silicon materials

Published Papers (4 papers)

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Research

11 pages, 2931 KiB  
Article
A Novel Chemical Gas Vapor Sensor Based on Photoluminescence Enhancement of Rugate Porous Silicon Filters
by Zicheng Zhou and Honglae Sohn
Sensors 2020, 20(9), 2722; https://doi.org/10.3390/s20092722 - 10 May 2020
Cited by 3 | Viewed by 2737
Abstract
In this study, an innovative rugate filter configuration porous silicon (PSi) with enhanced photoluminescence intensity was fabricated. The fabricated PSi exhibited dual optical properties with both sharp optical reflectivity and sharp photoluminescence (PL), and it was developed for use in organic vapor sensing. [...] Read more.
In this study, an innovative rugate filter configuration porous silicon (PSi) with enhanced photoluminescence intensity was fabricated. The fabricated PSi exhibited dual optical properties with both sharp optical reflectivity and sharp photoluminescence (PL), and it was developed for use in organic vapor sensing. When the wavelength of the resonance peak from the rugate PSi filters is engineered to overlap with the emission band of the PL from the PSi quantum dots, the PL intensity is amplified, thus reducing the full width at half maximum (FWHM) of the PL band from 154 nm to 22 nm. The rugate PSi filters samples were fabricated by electrochemical etching of highly doped n-type silicon under illumination. The etching solution consisted of a 1:1 volume mixture of 48% hydrofluoric acid and absolute ethanol and photoluminescent rugate PSi filter was fabricated by etching while using a periodic sinusoidal wave current with 10 cycles. The obtained samples were characterized by scanning electron microscopy (SEM), and both reflection redshift and PL quenching were measured under exposure to organic vapors. The reflection redshift and PL quenching were both affected by the vapor pressure and dipole moment of the organic species. Full article
(This article belongs to the Special Issue Fabrication, Modeling and Integration of a Silicon Technology Based Sensor)
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10 pages, 7263 KiB  
Article
Fabrication of Microbolometer Arrays Based on Polymorphous Silicon–Germanium
by Ricardo Jimenez, Mario Moreno, Alfonso Torres, Alfredo Morales, Arturo Ponce, Daniel Ferrusca, Jose Rangel-Magdaleno, Jorge Castro-Ramos, Julio Hernandez-Perez and Eduardo Cano
Sensors 2020, 20(9), 2716; https://doi.org/10.3390/s20092716 - 09 May 2020
Cited by 14 | Viewed by 4805
Abstract
This work reports the development of arrays of infrared sensors (microbolometers) using a hydrogenated polymorphous silicon–germanium alloy (pm-SixGe1-x:H). Basically, polymorphous semiconductors consist of an amorphous semiconductor matrix with embedded nanocrystals of about 2–3 nm. The pm-SixGe1-x [...] Read more.
This work reports the development of arrays of infrared sensors (microbolometers) using a hydrogenated polymorphous silicon–germanium alloy (pm-SixGe1-x:H). Basically, polymorphous semiconductors consist of an amorphous semiconductor matrix with embedded nanocrystals of about 2–3 nm. The pm-SixGe1-x:H alloy studied has a high temperature coefficient of resistance (TCR) of 4.08%/K and conductivity of 1.5 × 10−5 S∙cm−1. Deposition of thermosensing film was made by plasma-enhanced chemical vapor deposition (PECVD) at 200 °C, while the area of the devices is 50 × 50 μm2 with a fill factor of 81%. Finally, an array of 19 × 20 microbolometers was packaged for electrical characterization. Voltage responsivity values were obtained in the range of 4 × 104 V/W and detectivity around 2 × 107 cm∙Hz1/2/W with a polarization current of 70 μA at a chopper frequency of 30 Hz. A minimum value of 2 × 10−10 W/Hz1/2 noise equivalent power was obtained at room temperature. In addition, it was found that all the tested devices responded to incident infrared radiation, proving that the structure and mechanical stability are excellent. Full article
(This article belongs to the Special Issue Fabrication, Modeling and Integration of a Silicon Technology Based Sensor)
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14 pages, 5274 KiB  
Article
Laser-based Thickness Control in a Double-Side Polishing System for Silicon Wafers
by Liang Zhu, Biao Mei, Weidong Zhu and Wei Li
Sensors 2020, 20(6), 1603; https://doi.org/10.3390/s20061603 - 13 Mar 2020
Cited by 2 | Viewed by 4198
Abstract
Thickness control is a critical process of automated polishing of large and thin Si wafers in the semiconductor industry. In this paper, an elaborate double-side polishing (DSP) system is demonstrated, which has a polishing unit with feedback control of wafer thickness based on [...] Read more.
Thickness control is a critical process of automated polishing of large and thin Si wafers in the semiconductor industry. In this paper, an elaborate double-side polishing (DSP) system is demonstrated, which has a polishing unit with feedback control of wafer thickness based on the scan data of a laser probe. Firstly, the mechanical structure, as well as the signal transmission and control of the DSP system, are discussed, in which the thickness feedback control is emphasized. Then, the precise positioning of the laser probe is explored to obtain the continuous and valid scan data of the wafer thickness. After that, a B-spline model is applied for the characterization of the wafer thickness function to provide the thickness control system with credible thickness deviation information. Finally, experiments of wafer-thickness evaluation and control are conducted on the presented DSP system. With the advisable number of control points in B-spline fitting, the thickness variation can be effectively controlled in wafer polishing with the DSP system, according to the experimental results of curve fitting and the statistical analysis of the experimental data. Full article
(This article belongs to the Special Issue Fabrication, Modeling and Integration of a Silicon Technology Based Sensor)
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11 pages, 4616 KiB  
Article
Temperature Gradient Method for Alleviating Bonding-Induced Warpage in a High-Precision Capacitive MEMS Accelerometer
by Dandan Liu, Huafeng Liu, Jinquan Liu, Fangjing Hu, Ji Fan, Wenjie Wu and Liangcheng Tu
Sensors 2020, 20(4), 1186; https://doi.org/10.3390/s20041186 - 21 Feb 2020
Cited by 7 | Viewed by 3121
Abstract
Capacitive MEMS accelerometers with area-variable periodic-electrode displacement transducers found wide applications in disaster monitoring, resource exploration and inertial navigation. The bonding-induced warpage, due to the difference in the coefficients of thermal expansion of the bonded slices, has a negative influence on the precise [...] Read more.
Capacitive MEMS accelerometers with area-variable periodic-electrode displacement transducers found wide applications in disaster monitoring, resource exploration and inertial navigation. The bonding-induced warpage, due to the difference in the coefficients of thermal expansion of the bonded slices, has a negative influence on the precise control of the interelectrode spacing that is essential to the sensitivity of accelerometers. In this work, we propose the theory, simulation and experiment of a method that can alleviate both the stress and the warpage by applying different bonding temperature on the bonded slices. A quasi-zero warpage is achieved experimentally, proving the feasibility of the method. As a benefit of the flat surface, the spacing of the capacitive displacement transducer can be precisely controlled, improving the self-noise of the accelerometer to 6 ng/√Hz @0.07 Hz, which is about two times lower than that of the accelerometer using a uniform-temperature bonding process. Full article
(This article belongs to the Special Issue Fabrication, Modeling and Integration of a Silicon Technology Based Sensor)
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