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Advanced Optoelectronic and Photonic Devices for Next-Generation Sensing and Communication

A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Optical Sensors".

Deadline for manuscript submissions: 30 June 2026 | Viewed by 1041

Special Issue Editors

State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
Interests: nano-optoelectronics; nanophotonics; terahertz devices; inverse design; AI for materials

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Guest Editor
State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, No. 10, Xi Tucheng Road, Beijing, China
Interests: optical interconnection technologies for data centers; optical communication; photonic integration technologies; advanced photonic and optoelectronic devices

Special Issue Information

Dear Colleagues,

Sensing and communication are two key technologies of Internet of Things (IoT). With the popularization of terminal devices and the explosive growth of data volume, there is an urgent demand for advanced sensors and communication devices with ultra-small size, ultra-high performance, ultra-fast response, and ultra-low power consumption. As Moore's Law gradually approaches its physical bottleneck, optoelectronic and photonic devices are regarded as the building blocks for next-generation information systems. In recent years, optoelectronic and photonic devices based on novel structures such as nanowires, quantum dots, two-dimensional materials, metamaterials, and perovskites have shown great potential in sensing and communications. The aim of this Special Issue is to compile original research and review articles on the topics of advanced optoelectronic and photonic devices for sensing and communication systems. Research on theoretical analysis, structure design, device fabrication, and system application of optoelectronic and photonic devices are all welcome.

Dr. Xin Yan
Dr. Kai Liu
Guest Editors

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Keywords

  • advanced optoelectronic devices
  • advanced photonic devices
  • nano-optoelectronics
  • nanophotonics
  • sensing
  • optical communication
  • optical interconnection

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Published Papers (1 paper)

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Research

12 pages, 2727 KB  
Article
A Photovoltaic-Integrated Broadband Photodetector Based on Vertically-Stacked Lateral-Aligned Nanowire Arrays
by Ke Jin, Xin Yan, Yao Li and Xia Zhang
Sensors 2025, 25(23), 7308; https://doi.org/10.3390/s25237308 - 1 Dec 2025
Viewed by 753
Abstract
A photovoltaic-integrated broadband photodetector based on vertically-stacked lateral-aligned III–V nanowire arrays is proposed and investigated. The staggered arrangement configuration drastically reduces the competition between solar cell and photodetector that is difficult to avoid in vertically-stacked planar structures, which enables broadband strong absorption. The [...] Read more.
A photovoltaic-integrated broadband photodetector based on vertically-stacked lateral-aligned III–V nanowire arrays is proposed and investigated. The staggered arrangement configuration drastically reduces the competition between solar cell and photodetector that is difficult to avoid in vertically-stacked planar structures, which enables broadband strong absorption. The lower GaAs nanowires (NWs) act as Mie scattering centers, which scatter the incident light passing through the gaps back to the upper layer, enhancing the absorption of InAs NWs over a wide wavelength range from the ultraviolet to the infrared. Meanwhile, the light trapping effect of the upper InAs nanowires improves the absorption of lower GaAs NWs. At a near-infrared wavelength of 1400 nm, the photovoltaic-integrated InAs nanowire photodetector exhibits a photocurrent density of 168.83 mA/cm2 and responsivity of 0.168 A/W, 90% and 93% higher than the single layer InAs nanowires. The conversion efficiency of the GaAs nanowire solar cell is also improved after integration. This work may pave the way for the development of self-powered miniaturized broadband photodetectors. Full article
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