Preparation of Semiconductor Materials and Their Application in Photoelectronic Devices

A special issue of Processes (ISSN 2227-9717). This special issue belongs to the section "Materials Processes".

Deadline for manuscript submissions: 15 May 2026 | Viewed by 860

Special Issue Editor


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Guest Editor
School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710072, China
Interests: UV photodetector; bismuth-based semiconductor materials
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Special Issue Information

Dear Colleagues,

Semiconductor materials with satisfying photoelectric properties can convert light energy to electrical energy. These materials could be fabricated into functional optoelectronic devices such as solar cells, light-emitting diodes (LED), X-ray detectors, and photodetectors, which show great potential in image congnition, information transmission, automatic control systems, etc. To assemble optoelectronic devices with high performance, not only the morphology and microstructure of the semiconductor material but also the adoption of reasonable device structures and suitable electrode configurations are vital because of their impacts on the behaviors of charge carriers. Herein, the preparation process of semiconductor material and the assembly process of corresponding photoelectronic devices are worthy of great attention from researchers.

This Special Issue, “Preparation of Semiconductor Materials and Their Application in Photoelectronic Devices,” seeks high-quality work focusing on semiconductor materials in various optoelectronic devices. Topics include, but are not limited to:

  • Synthesis of semiconductor materials with novel morphology and microstructure;
  • Effects of preparation conditions on the morphology and microstructure of the semiconductor material;
  • Semiconductor materials utilized in solar cells, LEDs, and phototransistors;
  • Semiconductor materials applied in UV, visible, and infrared-light photodetectors;
  • Semiconductor materials used in lasers and display devices;
  • Semiconductor materials utilized in X-ray and Terahertz detection;
  • Optimized photoelectric performance achieved by modified preparation process of semiconductor materials;
  • Effects of material preparation and device assembly on the charge carrier behaviors in photoelectronic devices.

Dr. Weixin Ouyang
Guest Editor

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Keywords

  • semiconductor materials
  • photoelectronic devices
  • charge carriers
  • material preparation
  • device assembly
  • solar cells
  • photodetectors
  • LEDs
  • lasers

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Published Papers (1 paper)

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Research

18 pages, 7910 KB  
Article
Mixed-Dimensional 3D BiOCl Nanosheet Arrays/2D ZnO Nanoparticle Film Heterojunction Photodetectors with High Self-Powered Performance for Light Communication
by Mingmin Zhang and Weixin Ouyang
Processes 2025, 13(11), 3428; https://doi.org/10.3390/pr13113428 - 25 Oct 2025
Viewed by 412
Abstract
High-performance self-powered ultraviolet (UV) photodetectors (PDs) based on mixed-dimensional 3D BiOCl nanosheet array/2D ZnO nanoparticle films heterojunction were fabricated via facile spin-coating and impregnation methods. Under zero bias, compared to the pristine ZnO PD exhibiting a large dark current (≈2 μA) and slow [...] Read more.
High-performance self-powered ultraviolet (UV) photodetectors (PDs) based on mixed-dimensional 3D BiOCl nanosheet array/2D ZnO nanoparticle films heterojunction were fabricated via facile spin-coating and impregnation methods. Under zero bias, compared to the pristine ZnO PD exhibiting a large dark current (≈2 μA) and slow response time (>20 s/>20 s), the optimized 2-BiOCl-ZnO heterojunction PD demonstrated a dramatically suppressed dark current (≈1 nA), along with an ultrahigh on/off ratio (22,748) and a shorter response time (17.44 ms/14 ms) under 365 nm light illumination. This optimized device also achieved a remarkable responsivity of 1.08 A·W−1 and a detectivity of 2.48 × 1013 Jones at 354 nm. The built-in electric field formed at the BiOCl-ZnO heterojunction interface, the improved light absorption enabled by the mixed-dimensional heterostructure, and the optimized charge carrier separation and transport within the device were responsible for the enhanced self-powered performance. Due to its fascinating photoelectric properties, this PD was applied as a self-powered signal receiver in a UV optical communication system, demonstrating the ability to achieve efficient and high-speed message transmission. The rational construction of BiOCl-based heterojunction has proved to be an efficient pathway to achieving self-powered photodetection. These results demonstrate that the rational construction of heterojunctions holds great potential for fabricating high-performance PDs. Full article
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