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Photonics
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Semiconductor Optoelectronic Devices: Characterizations, Design and Fabrication
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Semiconductor Optoelectronic Devices: Characterizations, Design and Fabrication

A special issue of Photonics (ISSN 2304-6732). This special issue belongs to the section "Optoelectronics and Optical Materials".

Deadline for manuscript submissions: 31 August 2026 | Viewed by 3684

Editors

Dr. Yining Mu

E-Mail Website
Guest Editor
College of Physics, Changchun University of Science and Technology, Changchun 130022, China
Interests: transient optoelectronic devices and systems; optical communication systems; infrared spectroscopic detection and analysis; infrared optical design; preparation and application of electro-vacuum optoelectronic devices; perovskite and emerging semiconductors
Dr. Jikai Yang

E-Mail Website
Guest Editor
College of Physics, Changchun University of Science and Technology, Changchun 130022, China
Interests: photoelectric thin film materials (storage, electrochromic); photoelectrochemical; thin-film physical technology; solar photocatalysis

Special Issue Information

Dear Colleagues,

The field of semiconductor optoelectronic devices has witnessed remarkable progress over the past decades, driven by the rapid advancement of materials synthesis, nanofabrication, and photonic integration technologies. These devices, including photodetectors, light-emitting diodes, lasers, and modulators, play crucial roles in optical communication, sensing, imaging, and energy applications. At the same time, the increasing demand for high performance, miniaturization, and multifunctionality continues to pose significant challenges for device design, characterization, and fabrication.

This Special Issue, "Semiconductor Optoelectronic Devices: Characterizations, Design and Fabrication," aims to provide a timely platform for researchers to share their latest achievements and perspectives in this rapidly evolving field. We welcome original research articles, communications, and review papers covering a broad range of topics, including but not limited to, the following:

Novel semiconductor materials and heterostructures for optoelectronic applications;

Advanced device architectures and fabrication strategies;

Optical and electrical characterization techniques;

Device physics and performance optimization;

Emerging applications in communication, sensing, imaging, and quantum photonics.

We sincerely invite contributions from both academic and industrial researchers worldwide. Through this Special Issue, we hope to foster collaboration, exchange innovative ideas, and advance the understanding and development of next-generation optoelectronic technologies.

We look forward to receiving your submissions.

Dr. Yining Mu
Dr. Jikai Yang
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 250 words) can be sent to the Editorial Office for assessment.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-anonymized peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Photonics is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • semiconductor optoelectronic devices
  • photodetectors and imaging sensors
  • light-emitting diodes and lasers
  • nanofabrication and device design
  • optical and electrical characterization
  • quantum and integrated photonics
  • perovskite and emerging semiconductors
  • device stability and reliability

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Published Papers (6 papers)

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Research

22 pages, 1479 KB  
Article
Silicon-Thickness-Dependent Optimization of Ultra-Thin SOI Graphene–Plasmonic Slot Electro–Optic Modulators
by Amr G. AbdElKader and Kazutoshi Kato
Photonics 2026, 13(6), 581; https://doi.org/10.3390/photonics13060581 - 14 Jun 2026
Viewed by 306
Abstract
Graphene–plasmonic electro–optic (EO) modulators have attracted significant interest for compact and energy-efficient integrated photonic systems due to their electrically tunable optical response and strong light–matter interaction. In this work, an ultra-thin silicon-on-insulator (SOI) graphene–plasmonic slot modulator (G-PSM) is investigated using a combined semi-analytical [...] Read more.
Graphene–plasmonic electro–optic (EO) modulators have attracted significant interest for compact and energy-efficient integrated photonic systems due to their electrically tunable optical response and strong light–matter interaction. In this work, an ultra-thin silicon-on-insulator (SOI) graphene–plasmonic slot modulator (G-PSM) is investigated using a combined semi-analytical and numerical framework. The analysis integrates finite-temperature Kubo conductivity modeling, perturbation-based effective-index analysis, overlap-factor evaluation, eigenmode analysis, and full-wave simulations to study the influence of silicon thickness on the EO performance of the proposed structure. The obtained results demonstrate that geometry engineering strongly affects modal confinement, overlap enhancement, effective-index perturbation, transmission characteristics, extinction ratio (ER), insertion loss (IL), energy-per-bit consumption, and EO bandwidth. Under optimized operating conditions, the proposed G-PSM achieves an effective refractive-index variation of approximately 3.1×10−3, an ER of approximately 3.5 dB, an IL of 1.5–2 dB, an energy-per-bit consumption of approximately 7.5 fJ/bit, and a 3 dB EO bandwidth approaching 200 GHz. Strong electromagnetic confinement is achieved inside the plasmonic slot region near the graphene-active layer, enabling efficient electro–absorptive and electro–refractive modulation. Excellent agreement between the semi-analytical calculations and numerical simulations validates the developed framework and confirms the suitability of the proposed ultra-thin SOI G-PSM for compact broadband EO modulation in future integrated photonic systems. Full article
(This article belongs to the Special Issue Semiconductor Optoelectronic Devices: Characterizations, Design and Fabrication)
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12 pages, 21298 KB  
Article
Characteristics and Influencing Factors of Multiplication Noise in EBCMOS
by Gangcheng Jiao, Rongxuan Liang, Yuanhe Liu, Chongxiao Wang, Lei Yan, Weijun Chen, De Song and Ye Li
Photonics 2026, 13(6), 511; https://doi.org/10.3390/photonics13060511 - 24 May 2026
Viewed by 451
Abstract
Based on the theory of photon propagation and the principle of electron–semiconductor interaction, this paper proposes a formation mechanism model of multiplication noise in the electron multiplication layer of EBCMOS. Using the Monte Carlo method, the signal-to-noise ratio (SNR) of multiplied electrons is [...] Read more.
Based on the theory of photon propagation and the principle of electron–semiconductor interaction, this paper proposes a formation mechanism model of multiplication noise in the electron multiplication layer of EBCMOS. Using the Monte Carlo method, the signal-to-noise ratio (SNR) of multiplied electrons is calculated, and the effects of key structural design parameters (including the doping concentration of the P-type substrate, thickness of the electron multiplication layer, and the material and thickness of the passivation layer) along with the incident electron energy on multiplication noise are systematically analyzed. The results show that Al2O3 is the optimal passivation material for structural design, and the SNR can be effectively improved by increasing the incident electron energy, reducing the passivation layer thickness, decreasing the doping concentration, and thinning the electron multiplication layer. These findings provide theoretical insights for the electron multiplication layer structural optimization and performance improvement of EBCMOS. Full article
(This article belongs to the Special Issue Semiconductor Optoelectronic Devices: Characterizations, Design and Fabrication)
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13 pages, 2761 KB  
Article
Design of High-Speed MUTC-PD Under High Input Optical Power Utilizing Combined Analytical and Numerical Methods
by Xiyue Zhang and Xiaofeng Duan
Photonics 2026, 13(4), 370; https://doi.org/10.3390/photonics13040370 - 13 Apr 2026
Viewed by 778
Abstract
High-speed photodetectors with extended dynamic ranges are critical for emerging optical systems like LiDAR. This paper presents a design methodology for a modified uni-traveling-carrier photodetector (MUTC-PD) that integrates a physics-based analytical model with numerical simulations. The existing analytical models for MUTC-PDs rely on [...] Read more.
High-speed photodetectors with extended dynamic ranges are critical for emerging optical systems like LiDAR. This paper presents a design methodology for a modified uni-traveling-carrier photodetector (MUTC-PD) that integrates a physics-based analytical model with numerical simulations. The existing analytical models for MUTC-PDs rely on approximations that may not hold under high injection levels and high frequencies, leading to discrepancies between theoretical predictions and practical observations. To address this limitation, we re-examine the governing equations and derive a corrected frequency response analytical model based on drift–diffusion theory by decomposing the device into distinct transport regions, enabling a physically meaningful optimization of the epitaxial layer structure to maximize theoretical intrinsic bandwidth. The calculated results closely match the simulated bandwidth (maximum error less than 6%), demonstrating consistent peak positions and trends. Subsequently, numerical simulations reveal the dynamic evolution of the device’s bandwidth under varying incident optical intensities. The results demonstrate that the intrinsic bandwidth initially increases to a peak of 325.82 GHz at 7×104W/cm2 under −3.5 V, attributed to the drift-enhancement effect driven by the self-induced quasielectric field. Beyond this optimal regime, the space charge effect causes internal field collapse and significant bandwidth degradation. This study establishes bandwidth maintenance capability under high injection as a key metric for linearity, offering a transparent theoretical and practical framework for designing a high-speed MUTC-PD. Full article
(This article belongs to the Special Issue Semiconductor Optoelectronic Devices: Characterizations, Design and Fabrication)
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20 pages, 5934 KB  
Article
Effect of Chip Number on the Spatial Light Distribution of High-Power-Density LEDs
by Xinyu Yang, Chuanbing Xiong, Xirong Li, Yingwen Tang, Hui Yuan, Yihao Ma, Bulang Luo and Jiaxin Di
Photonics 2026, 13(4), 363; https://doi.org/10.3390/photonics13040363 - 10 Apr 2026
Viewed by 419
Abstract
High-power-density LEDs can achieve many functions that are difficult for traditional light sources and conventional LEDs to realize, pushing the semiconductor lighting technology chain to a new level. Increasing the number of chips is an effective approach to improving the light output capability [...] Read more.
High-power-density LEDs can achieve many functions that are difficult for traditional light sources and conventional LEDs to realize, pushing the semiconductor lighting technology chain to a new level. Increasing the number of chips is an effective approach to improving the light output capability of LED devices. In this study, five high-power-density LED devices with different chip numbers (4, 9, 16, 25, and 64 chips) were fabricated using the same blue LED chips, and the effects of chip number on the light output capability, spatial light distribution characteristics, and spatially correlated color temperature distribution characteristics of high-power-density LED devices were systematically investigated. The temperature distribution characteristics of the internal chips were further analyzed in combination with infrared thermal imaging results. The results show that increasing the chip number significantly enhances the total light output capability of the device; however, due to the influence of thermal coupling among chips, the saturation current and saturated luminous intensity of devices with different chip numbers are not proportional to the chip number. Increasing the number of chips in the device does not alter the intrinsic spatial emission pattern. Under optical saturation conditions, the luminous intensity distribution curves of all five devices exhibit Lambertian spatial light distribution characteristics. In terms of correlated color temperature, the CCT of all devices increases with increasing current per chip, and devices with more chips exhibit higher CCT values and a faster increasing trend. The spatial CCT distribution results show that the correlated color temperature of the device reaches its maximum in the normal direction, decreases with increasing testing angle, and exhibits good spatial symmetry. The thermal imaging results show that devices with more chips exhibit higher average chip temperatures and a relatively more uniform temperature distribution, which improves the spatial CCT uniformity of the device to some extent. Full article
(This article belongs to the Special Issue Semiconductor Optoelectronic Devices: Characterizations, Design and Fabrication)
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11 pages, 1503 KB  
Article
Semiconductor Optoelectronic Polarization Imaging Approach for Enhanced Daytime Space Target Detection
by Guanyu Wen, Shuang Wang, Yukun Zeng, Shuzhuo Miao and Mingliang Zhang
Photonics 2026, 13(4), 355; https://doi.org/10.3390/photonics13040355 - 8 Apr 2026
Viewed by 582
Abstract
Daytime detection of space targets is challenging due to the strong skylight background and the limited resolution of conventional polarization imaging systems. In this work, we present a semiconductor-based polarization detection method that integrates a CMOS polarization imaging sensor with a Schmidt–Cassegrain telescope. [...] Read more.
Daytime detection of space targets is challenging due to the strong skylight background and the limited resolution of conventional polarization imaging systems. In this work, we present a semiconductor-based polarization detection method that integrates a CMOS polarization imaging sensor with a Schmidt–Cassegrain telescope. To compensate for the spatial resolution loss inherent in division-of-focal-plane semiconductor polarization detectors, a bicubic interpolation algorithm is applied to reconstruct the degree and angle of polarization images. Furthermore, a spectral filtering strategy is introduced to suppress skylight-induced stray radiation, improving image contrast and reducing the risk of detector saturation. The developed system combines semiconductor optoelectronic detection, optical filtering, and computational reconstruction into a compact experimental platform. Validation experiments on Polaris and low-Earth-orbit space targets under daytime conditions demonstrate that the proposed approach achieves clearer and sharper polarization images compared with traditional intensity-based methods. Objective evaluation metrics, including gradient, contrast, brightness, and spatial frequency, confirm significant improvements in image quality. These results highlight the potential of semiconductor optoelectronic devices for polarization-based imaging and provide an effective framework for enhancing daytime space target detection. Full article
(This article belongs to the Special Issue Semiconductor Optoelectronic Devices: Characterizations, Design and Fabrication)
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10 pages, 2680 KB  
Article
Effects of Device and Contact Dimension Scaling on the Performance of InGaN/GaN Quantum Dot Light-Emitting Diodes
by Muneeba Gul, Muhammad Usman, Shazma Ali and Ahmed Ali
Photonics 2026, 13(4), 320; https://doi.org/10.3390/photonics13040320 - 26 Mar 2026
Viewed by 679
Abstract
Inspired by the growing demand for small and effective optoelectronic devices, this paper presents a simulation-based analysis of InGaN/GaN quantum dot light-emitting diode, focusing on the effects of systematic variation in both anode and cathode contact regions, as well as overall device size. [...] Read more.
Inspired by the growing demand for small and effective optoelectronic devices, this paper presents a simulation-based analysis of InGaN/GaN quantum dot light-emitting diode, focusing on the effects of systematic variation in both anode and cathode contact regions, as well as overall device size. Two-dimensional simulations using APSYS software were used to examine the impact of scaling the device dimensions as well as the individual contact dimensions on significant performance parameters like internal quantum efficiency (IQE), optical output power, and current-voltage (IV) response. We simulated five LED device sizes that is 50 × 50 µm2, 100 × 100 µm2, 200 × 200 µm2, 300 × 300 µm2, and 400 × 400 µm2. As device size grows, so does the total current at each voltage. The highest current measurement is achieved by the device with dimensions 400 × 400 µm2 while the lowest is observed on the device with dimensions 50 × 50 µm2. In addition to changing the device dimensions, we ran extensive simulations on the sizes of p-type and n-type contacts. Notable changes were seen in the efficiency, optical power, and emission profile of the p-contact. The behavior of p-side contacts from 0 to 50 µm was the same, while contacts between 60 and 100 µm showed significant differences. The significant performance parameters were unaffected by changes to n-contact dimensions. The results of this study illustrate how the configuration of contacts and dimensions greatly influences the electrical and optical performance of quantum dot light-emitting diode. The results are believed to be helpful to researchers working on the design of next-generation compact and efficient solid-state lighting devices. Full article
(This article belongs to the Special Issue Semiconductor Optoelectronic Devices: Characterizations, Design and Fabrication)
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