Advanced Infrared Technology and Applications

A special issue of Photonics (ISSN 2304-6732).

Deadline for manuscript submissions: closed (31 January 2024) | Viewed by 1113

Special Issue Editors

Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, ON M5S 3G4, Canada
Interests: inorganic materials; chemistry; organics; thin-film transistors; nanocrystals; ultrafast spectroscopy

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Guest Editor
Photonic Devices Group, University of Virginia, 351 McCormick Rd, Charlottesville, VA 22904, USA
Interests: avalanche photodetector; infrared metamaterials; Monte Carlo simulation for quantum transport

Special Issue Information

Dear Colleagues,

There are lots of applications for infrared light in the chemical, biological, and optoelectronic fields. In the field of chemistry, chemical bond vibrations fall within this range, enabling the infrared light-involved chemistry research methodology. In the field of optoelectronics, infrared light-emitting diodes, infrared lasers, and photodetectors are extensively utilized for remote sensing and control. Due to the thermal effect of infrared light, it is also utilized in the photothermal field to determine temperature remotely, such as in thermography, and to generate electricity, hence the term "thermophotovoltaic". In the biological field, the ability of infrared to penetrate deeply into human tissue enables a variety of non-destructive tests, such as infrared imaging, and the ability of infrared light to induce physiological effects enables a variety of infrared therapies.

Due to the high demand, suitable infrared-range materials, such as 2D materials and infrared quantum materials, are still being developed. In the meantime, the use of infrared light in photodetectors, thermography, and LEDs is being studied with the development of new materials for performance improvement.

This Special Issue on "Advanced Infrared Technology and Applications" encourages research ranging from the fundamentals of infrared materials to cutting-edge research uses of infrared light in a variety of fields, in the form of regular and review papers.

  • The development of infrared light-absorbing and -emitting materials;
  • The advancement of infrared light spectroscopy, such as atomic force microscopy-based infrared spectroscopy and ultrafast infrared light spectroscopy;
  • The application of infrared light-absorbing/emitting materials in optoelectronic devices;
  • The application of infrared light in the biological and medicinal domains;
  • The development of infrared light-range photothermal materials and applications, including thermophotovoltaics.

Dr. Pan Xia
Dr. Dongxia Wei
Guest Editors

Manuscript Submission Information

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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Photonics is an international peer-reviewed open access monthly journal published by MDPI.

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Published Papers (1 paper)

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Research

12 pages, 1741 KiB  
Article
Interface Engineering and Electron-Hole Wave Function Overlap of InAs/AlSb Superlattice Infrared Detectors
by Jing Yu, Lianqing Zhu, Lidan Lu, Weiqiang Chen, Xiantong Zheng, Dongliang Zhang, Yuegang Fu and Jianzhen Ou
Photonics 2023, 10(11), 1268; https://doi.org/10.3390/photonics10111268 - 16 Nov 2023
Viewed by 803
Abstract
InAs/AlSb is a material system that can be used as a low-noise avalanche detector and operates in the short-wave infrared band. The interface parameters determine the wave function overlap (WFO). Maximizing the WFO of InAs/AlSb superlattices improves the quantum efficiency (QE) of infrared [...] Read more.
InAs/AlSb is a material system that can be used as a low-noise avalanche detector and operates in the short-wave infrared band. The interface parameters determine the wave function overlap (WFO). Maximizing the WFO of InAs/AlSb superlattices improves the quantum efficiency (QE) of infrared avalanche photodetectors (APDs). However, this remains a huge challenge. Here, the 8-band k·p perturbation method based on Bloch wave envelope function approximation was used to calculate the energy level structure of InAs/AlSb superlattices. The results indicate that the WFO is enhanced with increasing InSb interface thickness or when the InSb (or AlAs) interface is far from the intersection of InAs and AlSb. As the AlAs interface thickness increases, the WFO enhances and then reduces. The maximum increase in WFO is 15.7%, 93%, and 156.8%, respectively, with three different models. Based on the stress equilibrium condition, we consider the interface engineering scheme proposed for enhancing WFO with an increase of 16%, 114%, and 159.5%, respectively. Moreover, the absorption wavelength shift is less than ±0.1 μm. Therefore, the interface layer thickness and position can be designed to enhance the WFO without sacrificing other properties, thereby improving the QE of the device. It provides a new idea for the material epitaxy of APDs. Full article
(This article belongs to the Special Issue Advanced Infrared Technology and Applications)
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