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Photonics
Special Issues
Advances in Photonic Integrated Devices and Circuits
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Advances in Photonic Integrated Devices and Circuits

A special issue of Photonics (ISSN 2304-6732).

Deadline for manuscript submissions: closed (15 September 2022) | Viewed by 19453

Special Issue Editors

Prof. Dr. Ke Xu

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Guest Editor
Department of Electronic and Information Engineering, Harbin Institute of Technology, Harbin 518055, China
Interests: integrated photonics; nanophotonics; photonic integrated circuits; silicon photonics; optical modulators; photodetectors; optical interconnects; metasurface; inverse design; subwavelength gratings
Prof. Dr. Zhenzhou Cheng

E-Mail Website
Guest Editor
School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China
Interests: silicon photonics; nanophotonics
Special Issues, Collections and Topics in MDPI journals
Dr. Hongyan Fu

E-Mail Website
Guest Editor
Nano-Devices Laboratory, Tsinghua-Berkeley Shenzhen Institute, Tsinghua University, Shenzhen 518055, China
Interests: microcavity sensing; silicon photonics; optical nonlinearity; 3D sensing
Special Issues, Collections and Topics in MDPI journals
Dr. Lei Lei

E-Mail Website
Guest Editor
College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518061, China
Interests: integrated photonics; optical communications; all-optical signal processing; optical nonlinearity; metamaterials and metasurface

Special Issue Information

Dear Colleagues,

Photonic integration is a promising solution for low-cost and high-performance chip-based photonic devices and systems. Currently, it is commercially driven by the increasing demand for low-cost transceivers in telecommunications and optical interconnects. In the future, we believe it might also be attractive for applications in sensing, computing, light detection and ranging (LiDAR), quantum information, etc.

In this Special Issue, we will discuss advances in key enabling devices and applications for photonics integrated circuits, which includes but is not limited to light source, modulators, passive waveguide devices, fiber-chip interface, detectors, LiDAR chip, sensing chip, computing circuits, etc. This Special Issue plans to focus on representing a broad range of integrated photonic devices, circuits and various applications. We welcome your work in any form, including reviews, articles and communications. Topics of interest include but are not limited to:

  • Light sources;
  • Integrated modulators and detectors;
  • Passive wavelength/polarization controlling devices, multimode devices and waveguides;
  • Fiber-chip coupler and antennas;
  • Chip-based optical communications;
  • Optical phased arrays and chip-based LiDAR;
  • Chip-based biosensors, gyroscope, etc.;
  • Integrated optical neural network;
  • Inverse design in integrated photonics;
  • On-chip quantum information.

Dr. Ke Xu
Dr. Zhenzhou Cheng
Dr. Hongyan Fu
Dr. Lei Lei
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Photonics is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Integrated optics
  • Photonic integrated circuits
  • Silicon photonics
  • Waveguides
  • Light sources
  • Couplers
  • LiDAR
  • Inverse design

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  • Greater discoverability: Special Issues support the reach and impact of scientific research. Articles in Special Issues are more discoverable and cited more frequently.
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Further information on MDPI's Special Issue polices can be found here.

Published Papers (6 papers)

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Research

8 pages, 8742 KiB  
Communication
Grazing-Angle Fiber-to-Waveguide Coupler
by Yeolheon Seong, Jinwook Kim and Heedeuk Shin
Photonics 2022, 9(11), 799; https://doi.org/10.3390/photonics9110799 - 26 Oct 2022
Viewed by 2412
Abstract
The silicon photonics market has grown rapidly over recent decades due to the demand for high bandwidth and high data-transfer capabilities. Silicon photonics leverage well-developed semiconductor fabrication technologies to combine various photonic functionalities on the same chip. Complicated silicon photonic integrated circuits require [...] Read more.
The silicon photonics market has grown rapidly over recent decades due to the demand for high bandwidth and high data-transfer capabilities. Silicon photonics leverage well-developed semiconductor fabrication technologies to combine various photonic functionalities on the same chip. Complicated silicon photonic integrated circuits require a mass-producible packaging strategy with broadband, high coupling efficiency, and fiber-array fiber-to-chip couplers, which is a big challenge. In this paper, we propose a new approach to fiber-array fiber-to-chip couplers which have a complementary metal-oxide semiconductor-compatible silicon structure. An ultra-high numerical aperture fiber is polished at a grazing angle and positioned on a taper-in silicon waveguide. Our simulation results demonstrate a coupling efficiency of more than 90% over hundreds of nanometers and broad alignment tolerance ranges, supporting the use of a fiber array for the packaging. We anticipate that the proposed approach will be able to be used in commercialized systems and other photonic integrated circuit platforms, including those made from lithium niobate and silicon nitride. Full article
(This article belongs to the Special Issue Advances in Photonic Integrated Devices and Circuits)
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13 pages, 2684 KiB  
Article
Electric Field Sensor Based on High Q Fano Resonance of Nano-Patterned Electro-Optic Materials
by Xiaowei Yin, Fengli Liu, Wentao Qiu, Can Liu, Heyuan Guan and Huihui Lu
Photonics 2022, 9(6), 431; https://doi.org/10.3390/photonics9060431 - 17 Jun 2022
Cited by 3 | Viewed by 3547
Abstract
This paper presents theoretical studies of Fano resonance based electric-field (E-field) sensors. E-field sensor based on two electro-optical (EO) materials i.e., barium titanate (BaTiO3, BTO) nanoparticles and relaxor ferroelectric material Pb(Mg1/3Nb2/3)O3-PbTiO [...] Read more.
This paper presents theoretical studies of Fano resonance based electric-field (E-field) sensors. E-field sensor based on two electro-optical (EO) materials i.e., barium titanate (BaTiO3, BTO) nanoparticles and relaxor ferroelectric material Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) combined with nanostructure are studied. As for the BTO based E-field sensor, a configuration of filling the BTO nanoparticles into a nano-patterned thin film silicon is proposed. The achieved resonance quality factor (Q) is 11,855 and a resonance induced electric field enhancement factor is of around 105. As for the design of PMN-PT based E-field sensor, a configuration by combining two square lattice air holes in PMN-PT thin film but with one offsetting hole left is chosen. The achieved resonance Q is of 9,273 and an electric field enhancement factor is of around 96. The resonance wavelength shift sensitivity of PMN-PT nanostructured can reach up to 4.768 pm/(V/m), while the BTO based nanostructure has a sensitivity of 0.1213 pm/(V/m). If a spectrum analyzer with 0.1 pm resolution is considered, then the minimum detection of the electric field Emin is 20 mV/m and 0.82 V/m for PMN-PT and BTO based nanostructures, respectively. The nano-patterned E-field sensor studied here are all dielectric, it has therefore the advantage of large measurement bandwidth, high measurement fidelity, high spatial resolution and high sensitivity. Full article
(This article belongs to the Special Issue Advances in Photonic Integrated Devices and Circuits)
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12 pages, 1641 KiB  
Article
Parity-Time Symmetry Enabled Band-Pass Filter Featuring High Bandwidth-Tunable Contrast Ratio
by Xinda Lu, Nuo Chen, Boqing Zhang, Haofan Yang, Yuntian Chen, Xinliang Zhang and Jing Xu
Photonics 2022, 9(6), 380; https://doi.org/10.3390/photonics9060380 - 26 May 2022
Cited by 5 | Viewed by 2328
Abstract
Integrated optical filters based on microring resonators play a critical role in many applications, ranging from wavelength division multiplexing and switching to channel routing. Bandwidth tunable filters are capable of meeting the on-demand flexible operations in complex situations, due to their advantages of [...] Read more.
Integrated optical filters based on microring resonators play a critical role in many applications, ranging from wavelength division multiplexing and switching to channel routing. Bandwidth tunable filters are capable of meeting the on-demand flexible operations in complex situations, due to their advantages of scalability, multi-functionality, and being energy-saving. Recent studies have investigated how parity-time (PT) symmetry coupled-resonant systems can be applied to the bandwidth-tunable filters. However, due to the trade-off between the bandwidth-tunable contrast ratio and insertion loss of the system, the bandwidth-tunable contrast ratio of this method is severely limited. Here, the bandwidth-tunable contrast ratio is defined as the maximum bandwidth divided by the minimum bandwidth. In this work, we show that a high bandwidth-tunable contrast ratio and low insertion loss of the system can be achieved simultaneously by increasing the coupling strength between the input port and the resonant. Theoretical analysis under different coupling states reveals that the low insertion loss can be obtained when the system initially operates at the over-coupling condition. A high bandwidth-tunable contrast ratio PT-symmetry band-pass filter with moderate insertion loss is shown on the Silicon platform. Our scheme provides an effective method to reduce the insertion loss of on-chip tunable filters, which is also applicable to the high-order cascaded microring systems. Full article
(This article belongs to the Special Issue Advances in Photonic Integrated Devices and Circuits)
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9 pages, 3732 KiB  
Article
An Ultra-Broadband Polarization Beam Splitter Based on the Digital Meta-Structure at the 2 µm Waveband
by Jiefeng Xu, Yingjie Liu, Xiaoyuan Guo, Jiangbing Du and Ke Xu
Photonics 2022, 9(5), 361; https://doi.org/10.3390/photonics9050361 - 22 May 2022
Cited by 4 | Viewed by 3503
Abstract
The 2 μm waveband is considered to have great potential in optical communications. Driven by the demands on high-performance functional devices in this spectral band, various integrated photonic components have been demonstrated. In this work, an analog and digital topology optimization method is [...] Read more.
The 2 μm waveband is considered to have great potential in optical communications. Driven by the demands on high-performance functional devices in this spectral band, various integrated photonic components have been demonstrated. In this work, an analog and digital topology optimization method is proposed to design an ultra-broadband polarization beam splitter at the 2 μm waveband. Within an optical bandwidth of 213 nm, the excess losses of TE and TM modes are <0.53 dB and 0.3 dB, respectively. The corresponding polarization extinction ratios are >16.5 dB and 18.1 dB. The device has a very compact footprint of only 2.52 µm × 5.4 µm. According to our best knowledge, this is a benchmark demonstration of an ultra-broadband and ultra-compact polarization beam splitter enabled by the proposed optimization method. Full article
(This article belongs to the Special Issue Advances in Photonic Integrated Devices and Circuits)
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13 pages, 2846 KiB  
Article
Design of a Multi-Functional Integrated Optical Switch Based on Phase Change Materials
by Jie He, Junbo Yang, Hansi Ma, Xinpeng Jiang, Huan Yuan and Yang Yu
Photonics 2022, 9(5), 320; https://doi.org/10.3390/photonics9050320 - 7 May 2022
Cited by 9 | Viewed by 3004
Abstract
An optical switch based on silicon-on-insulator (SOI) technology is proposed that works in the C-band and switches by amorphous (Am) to crystalline (Cr) and Cr-to-Am phase transitions. The optical switch integrates the functions of polarization beam splitting and mode conversion, and consists of [...] Read more.
An optical switch based on silicon-on-insulator (SOI) technology is proposed that works in the C-band and switches by amorphous (Am) to crystalline (Cr) and Cr-to-Am phase transitions. The optical switch integrates the functions of polarization beam splitting and mode conversion, and consists of two asymmetric directional couplers (ADCs). The TM0 mode is converted to the TM1 mode through an asymmetric coupler to achieve the polarization splitting of the TM0 mode and TE0 mode. The output of the TE0 mode is then controlled by Ge2Sb2Se4Te1 (GSST). When the TE0 mode is input and the wavelength is 1550 nm, the insertion loss (IL) is lower than 0.62 dB and the crosstalk (CT) is lower than −9.88 dB for a directional coupler loaded with GSST that realizes the optical switch function in both amorphous and crystalline GSST. The extinction ratio (ER) of the two waveguides of the directional coupler is lower than −11.40 dB, simultaneously. When the TM0 mode is input and the wavelength is 1550 nm, the IL is lower than 0.62 dB for a directional coupler loaded without GSST. Full article
(This article belongs to the Special Issue Advances in Photonic Integrated Devices and Circuits)
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14 pages, 3157 KiB  
Article
Thin-Film Lithium Niobate Based Acousto-Optic Modulation Working at Higher-Order TE1 Mode
by Yang Yang, Yin Xu, Dongmei Huang, Feng Li, Yue Dong, Bo Zhang, Yi Ni and P. K. A. Wai
Photonics 2022, 9(1), 12; https://doi.org/10.3390/photonics9010012 - 28 Dec 2021
Cited by 4 | Viewed by 3262
Abstract
Acousto-optic modulation (AOM) is regarded as an effective way to link multi-physical fields on-chip. We propose an on-chip AOM scheme based on the thin-film lithium niobate (TFLN) platform working at the higher-order TE1 mode, rather than the commonly used fundamental TE0 [...] Read more.
Acousto-optic modulation (AOM) is regarded as an effective way to link multi-physical fields on-chip. We propose an on-chip AOM scheme based on the thin-film lithium niobate (TFLN) platform working at the higher-order TE1 mode, rather than the commonly used fundamental TE0 mode. Multi-physical field coupling analyses were carried out to obtain the refractive index change of the optical waveguide (>6.5×10−10 for a single phonon) induced by the enhanced acousto-optic interaction between the acoustic resonator mode and the multimode optical waveguide. By using a Mach-Zehnder interferometer (MZI) structure, the refractive index change is utilized to modulate the output spectrum of the MZI, thus achieving the AOM function. In the proposed AOM scheme, efficient mode conversion between the TE0 and TE1 mode is required in order to ensure that the AOM works at the higher-order TE1 mode in the MZI structure. Our results show that the half-wave-voltage-length product (VπL) is <0.01 V·cm, which is lower than that in some previous reports on AOM and electro-optic modulation (EOM) working at the fundamental TE0 mode (e.g., VπL > 0.04 V·cm for AOM, VπL > 1 V·cm for EOM). Finally, the proposed AOM has lower loss when compared with EOM because the electrode of the AOM can be placed far from the optical waveguide. Full article
(This article belongs to the Special Issue Advances in Photonic Integrated Devices and Circuits)
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