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Photonics
Special Issues
Advances in Integrated Photonics: From Materials to Devices and Systems
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Advances in Integrated Photonics: From Materials to Devices and Systems

A special issue of Photonics (ISSN 2304-6732).

Deadline for manuscript submissions: closed (10 July 2024) | Viewed by 3710

Special Issue Editors

Dr. Hua-Ying Liu

E-Mail Website
Guest Editor
National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
Interests: quantum information; optical frequency comb; quantum optics; integrated optics
Dr. Xiao-Hui Tian

E-Mail Website
Guest Editor
National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
Interests: lithium niobate photonics; integrated chips; optical superlattice; quantum information

Special Issue Information

Dear Colleagues,

Integrated photonics is important and essential for photonic applications. Similar to integrated electronics, the integration technique can not only significantly reduce the sizes of optical systems, improving their robustness as a result, but also makes low-cost mass production impossible, which may bring about a revolution in both fundamental research and practical applications regarding photonics. In this area, plenty of exciting achievements have been reached in recent years, ranging from the low-loss and high-accuracy fabrication of various substrate materials, including III–V semiconductors, silicon, silica, silicon nitride, lithium niobate, aluminum nitride, polymers, metal optics, etc., to high-performance integrated photonic devices with both passive (modulators, switches, filters, etc.) and active (lasers, amplifier, detectors, etc.) aspects. With these constituent materials and building blocks, compact and cost-effective integrated optical systems can be created, resulting in breakthroughs in sensing, computation, and communication technologies and in many other areas in both classical and quantum scenarios, thereby helping to revolutionize photonics.

The aim of this Special Issue is to present recent the advances in the diverse aspects of integrated photonics, from materials to devices and systems.

Dr. Hua-Ying Liu
Dr. Xiao-Hui Tian
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Photonics is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • optical microstructures
  • photonic integrated circuits
  • microwave photonics
  • optical computation
  • optical communication
  • quantum computation
  • quantum communication
  • light detection and ranging

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Published Papers (3 papers)

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Research

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15 pages, 8081 KiB  
Article
Polarization Analysis of Vertically Etched Lithium Niobate-on-Insulator (LNOI) Devices
by Chenyu Wang, Yuchen Liu, Jingyuan Qiu, Zhilin Ye, Dongjie Guo, Mengwen Chen, Zhijun Yin, Xiao-Hui Tian, Hua-Ying Liu, Shi-Ning Zhu and Zhenda Xie
Photonics 2024, 11(8), 771; https://doi.org/10.3390/photonics11080771 - 19 Aug 2024
Viewed by 933
Abstract
LNOI devices have emerged as prominent contributors to photonic integrated circuits (PICs), benefiting from their outstanding performance in electro-optics, acousto-optics, nonlinear optics, etc. Due to the physical properties and current etching technologies of LiNbO3, slanted sidewalls are typically formed in LNOI [...] Read more.
LNOI devices have emerged as prominent contributors to photonic integrated circuits (PICs), benefiting from their outstanding performance in electro-optics, acousto-optics, nonlinear optics, etc. Due to the physical properties and current etching technologies of LiNbO3, slanted sidewalls are typically formed in LNOI waveguides, causing polarization-related mode hybridization and crosstalk. Despite the low losses achieved with fabrication advancements in LNOI, such mode hybridization and crosstalk still significantly limit the device performance by introducing polarization-related losses. In this paper, we propose a vertically etched LNOI construction. By improving the geometrical symmetry in the waveguides, vertical sidewalls could adequately mitigate mode hybridization in common waveguide cross sections. Taking tapers and bends as representatives of PIC components, we then conducted theoretical modeling and simulations, which showed that vertical etching effectively exempts devices from polarization-related mode crosstalk. This not only improves the polarization purity and input mode transmittance but also enables lower polarization-related losses within more compact structures. As a demonstration of fabrication feasibility, we innovatively proposed a two-step fabrication technique, and successfully fabricated waveguides with vertical sidewalls. Such vertical etching technology facilitates the development of next-generation high-speed modulators, nonlinear optical devices, and other advanced photonic devices with lower losses and a smaller footprint, driving further innovations in both academic research and industrial applications. Full article
(This article belongs to the Special Issue Advances in Integrated Photonics: From Materials to Devices and Systems)
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11 pages, 3151 KiB  
Communication
Scintillation and Luminescent Properties of the (Gd,Y)3Al2Ga3O12:Ce Ceramics Obtained by Compaction of Green Bodies Using Digital Light Processing 3D Printing
by Lydia V. Ermakova, Valentina G. Smyslova, Valery V. Dubov, Petr V. Karpyuk, Petr S. Sokolov, Ilia Yu. Komendo, Aliaksei G. Bondarau, Vitaly A. Mechinsky and Mikhail V. Korzhik
Photonics 2024, 11(8), 695; https://doi.org/10.3390/photonics11080695 - 26 Jul 2024
Viewed by 987
Abstract
Dense and transparent ceramic samples of a (Gd,Y)3Al2Ga3O12:Ce scintillator were obtained by using stereolithography-based Digital Light Processing (DLP) 3D printing for compacting, subsequent burnout, and pressureless sintering. The effects of stoichiometric deviations and green body [...] Read more.
Dense and transparent ceramic samples of a (Gd,Y)3Al2Ga3O12:Ce scintillator were obtained by using stereolithography-based Digital Light Processing (DLP) 3D printing for compacting, subsequent burnout, and pressureless sintering. The effects of stoichiometric deviations and green body compaction methods (uniaxial pressing versus DLP 3D printing) on the optical, luminescent, and scintillation properties of ceramics were analyzed. An excess of Y and Gd in the composition led to an increase in transmittance and to the acceleration of the scintillation kinetics. Moreover, transparent ceramics made of 3D-printed green bodies were found to be superior in light yield to the samples, which were prepared from the same powders and densified by uniaxial pressing. Full article
(This article belongs to the Special Issue Advances in Integrated Photonics: From Materials to Devices and Systems)
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Review

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30 pages, 6944 KiB  
Review
Modeling Electronic and Optical Properties of InAs/InP Quantum Dots
by Fujuan Huang, Gaowen Chen and Xiupu Zhang
Photonics 2024, 11(8), 749; https://doi.org/10.3390/photonics11080749 - 10 Aug 2024
Viewed by 1140
Abstract
A theoretical investigation of electronic properties of self-assembled InAs/InP quantum dots (QDs) is presented, utilizing a novel two-step modeling approach derived from a double-capping procedure following QD growth processes, a method pioneered in this study. The electronic band structure of the QD is [...] Read more.
A theoretical investigation of electronic properties of self-assembled InAs/InP quantum dots (QDs) is presented, utilizing a novel two-step modeling approach derived from a double-capping procedure following QD growth processes, a method pioneered in this study. The electronic band structure of the QD is calculated by the newly established accurate two-step method, i.e., the improved strain-dependent, eight-band k p method. The impact of various QD structural parameters (e.g., height, diameter, material composition, sublayer, and inter-layer spacer) on electronic states’ distribution and transition energies is investigated. Analysis of carrier dynamics within QDs includes intraband and interband transitions. The calculation of the carrier transitions between two atomic states, providing insights into optical gain or loss within QDs, is in terms of dipole matrix element, momentum matrix element, and oscillation strength, etc. In addition, the time-domain, traveling-wave method (i.e., rate equations coupled with traveling-wave equations) is used to investigate the optical properties of QD-based lasers. Several optical properties of the QD-based lasers are investigated, such as polarization, gain bandwidth, two-state lasing, etc. Based on the aforementioned method, our key findings include the optimization of carrier non-radiative intraband relaxation through sublayer manipulation, wavelength control through emission blue-shifting and gain bandwidth via variation of sublayer, polarization control of QDs photoluminescence via excited states’ transitions, and the enhancement of two-state lasing in InAs/InP QD lasers by thin inter-layer spacers. This review offers comprehensive insights into QDs electronic band structures and carrier dynamics, providing valuable guidance for optimizing QD-based lasers and their potential designs. Full article
(This article belongs to the Special Issue Advances in Integrated Photonics: From Materials to Devices and Systems)
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