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Nanomaterials
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Two-Dimensional Semiconductor Nanomaterials and Nanodevices
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Two-Dimensional Semiconductor Nanomaterials and Nanodevices

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: closed (20 February 2024) | Viewed by 32046

Special Issue Editor

Prof. Dr. Mengtao Sun

E-Mail Website
Guest Editor
School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
Interests: two-dimensional semiconductor; two-dimensional semiconductor heterostructure; synthesis; optical properties; photocatalysis; nanomaterials and nanodevices
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Two-dimensional semiconductor nanomaterials and nanodevices are the subject of great attention in scientific research due to their possession of special physical and chemical properties when compared with the bulk nanomaterial. Two-dimensional semiconductor nanomaterials can be potentially used in the design of optical devices, optical sensors, and photocatalysts. Two-dimensional semiconductor heterostructures are especially interesting in terms of superlattices and interfacial charge transfer and can be manipulated by pressure, electric potential, and current, among other stimuli.

In consideration of their many fascinating properties and applications, we are preparing a devoted Special Issue entitled “Two-Dimensional Semiconductor Nanomaterials and Nanodevices”, for which we are seeking submissions on topics including, but not limited to, those mentioned above.

Prof. Dr. Mengtao Sun
Guest Editor

Manuscript Submission Information

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Keywords

  • two-dimensional semiconductor nanomaterials
  • two-dimensional semiconductor nanodevices
  • synthesis
  • optical properties
  • photocatalysis
  • heterostructure
  • interfacial charge transfer
  • surface plasmons of two-dimensional semiconductor nanomaterials

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Published Papers (6 papers)

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Research

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15 pages, 2492 KiB  
Article
Mathematical Modeling of Drain Current Estimation in a CSDG MOSFET, Based on La2O3 Oxide Layer with Fabrication—A Nanomaterial Approach
by Naveenbalaji Gowthaman and Viranjay M. Srivastava
Nanomaterials 2022, 12(19), 3374; https://doi.org/10.3390/nano12193374 - 27 Sep 2022
Cited by 12 | Viewed by 1770
Abstract
In this work, three-dimensional modeling of the surface potential along the cylindrical surrounding double-gate (CSDG) MOSFET is proposed. The derived surface potential is used to predict the values of electron mobility along the length of the device, thereby deriving the drain current equation [...] Read more.
In this work, three-dimensional modeling of the surface potential along the cylindrical surrounding double-gate (CSDG) MOSFET is proposed. The derived surface potential is used to predict the values of electron mobility along the length of the device, thereby deriving the drain current equation at the end of the device. The expressions are used for modeling the symmetric doped and undoped channel CSDG MOSFET device. This model uses Pao-Sah’s double integral to derive the current equation for the concentric cylindrical structure of the CSDG MOSFET. The three-dimensional surface potential estimation is performed analytically for doped and undoped device parameters. The maximum oxidant concentration of the oxide layer is observed to be 4.37 × 1016 cm−3 of the thickness of 0.82 nm for (100) and 3.90 × 1016 cm−3 of the thickness of 0.96 nm for (111) for dry oxidation, and 2.56 × 1019 cm−3 of thickness 0.33 nm for (100) and 2.11 × 1019 cm−3 of thickness 0.49 nm for (111) for wet oxidation environment conditions. Being an extensive analytical approach, the drain current serves the purpose of electron concentration explicitly inside the concentric cylindrical structures. The behavior of the device is analyzed for various threshold conditions of the gate voltage and other parameters. Full article
(This article belongs to the Special Issue Two-Dimensional Semiconductor Nanomaterials and Nanodevices)
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15 pages, 5237 KiB  
Article
Testing and Analysis of MOSFET-Based Absorber Integrated Antenna for 5G/WiMAX/WLAN Applications
by Elliot O. Omoru and Viranjay M. Srivastava
Nanomaterials 2022, 12(17), 2911; https://doi.org/10.3390/nano12172911 - 24 Aug 2022
Cited by 4 | Viewed by 1614
Abstract
A 3D electromagnetic circuit design and analysis of a MOSFET-based absorber active integrated antenna has been performed. It integrates a transmitting dual-band double material substrate (DMS) cylindrical surrounding patch antenna (CSPA) with a MOSFET-based absorber of reflected radio frequency power. It is a [...] Read more.
A 3D electromagnetic circuit design and analysis of a MOSFET-based absorber active integrated antenna has been performed. It integrates a transmitting dual-band double material substrate (DMS) cylindrical surrounding patch antenna (CSPA) with a MOSFET-based absorber of reflected radio frequency power. It is a solution to the problem of performance degradation in the power amplifier (PA) resulting from antenna and PA impedance mismatch. This fully integrated MOSFET-based absorber antenna can absorb reflected RF power with a diode-based quasi-circulator as part of the integrated design circuitry. The antenna used for the proposed integrated design will operate at frequencies ranging from 2 GHz to 3 GHz and from 4.6 GHz to 6.1 GHz, thus providing a bandwidth of 1 GHz and 1.5 GHz at a resonance frequency of 2.5 GHz and 5.3 GHz, respectively. This makes it suitable for use in lower and upper bands of WLAN/WiMAX medium RF front-end applications. Furthermore, the condition for MOSFET connected to the absorber (IS ≤ ID and VDS = 0) has been satisfied at both instances of resonance. In this proposed design, an antenna radiation efficiency of 84% has been observed. Full article
(This article belongs to the Special Issue Two-Dimensional Semiconductor Nanomaterials and Nanodevices)
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16 pages, 4924 KiB  
Article
A First-Principles Study on the Electronic, Thermodynamic and Dielectric Properties of Monolayer Ca(OH)2 and Mg(OH)2
by Mehrdad Rostami Osanloo, Kolade A. Oyekan and William G. Vandenberghe
Nanomaterials 2022, 12(10), 1774; https://doi.org/10.3390/nano12101774 - 23 May 2022
Cited by 8 | Viewed by 3100
Abstract
We perform first-principles calculations to explore the electronic, thermodynamic and dielectric properties of two-dimensional (2D) layered, alkaline-earth hydroxides Ca(OH)2 and Mg(OH)2. We calculate the lattice parameters, exfoliation energies and phonon spectra of monolayers and also investigate the thermal properties of [...] Read more.
We perform first-principles calculations to explore the electronic, thermodynamic and dielectric properties of two-dimensional (2D) layered, alkaline-earth hydroxides Ca(OH)2 and Mg(OH)2. We calculate the lattice parameters, exfoliation energies and phonon spectra of monolayers and also investigate the thermal properties of these monolayers, such as the Helmholtz free energy, heat capacity at constant volume and entropy as a function of temperature. We employ Density Functional Perturbation Theory (DFPT) to calculate the in-plane and out-of-plane static dielectric constant of the bulk and monolayer samples. We compute the bandgap and electron affinity values using the HSE06 functional and estimate the leakage current density of transistors with monolayer Ca(OH)2 and Mg(OH)2 as dielectrics when combined with HfS2 and WS2, respectively. Our results show that bilayer Mg(OH)2 (EOT∼0.60 nm) with a lower solubility in water offers higher out-of-plane dielectric constants and lower leakage currents than does bilayer Ca(OH)2 (EOT∼0.56 nm). Additionally, the out-of-plane dielectric constant, leakage current and EOT of Mg(OH)2 outperform bilayer h-BN. We verify the applicability of Anderson’s rule and conclude that bilayers of Ca(OH)2 and Mg(OH)2, respectively, paired with lattice-matched monolayer HfS2 and WS2, are effective structural combinations that could lead to the development of innovative multi-functional Field Effect Transistors (FETs). Full article
(This article belongs to the Special Issue Two-Dimensional Semiconductor Nanomaterials and Nanodevices)
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17 pages, 6440 KiB  
Article
Linear and Nonlinear Photon-Induced Cross Bridge/Space Charge Transfer in STC Molecular Crystals
by Chen Lu, Jing Yu, Hao Sheng, Yongjian Jiang, Fengyang Zhao and Jingang Wang
Nanomaterials 2022, 12(3), 535; https://doi.org/10.3390/nano12030535 - 4 Feb 2022
Cited by 9 | Viewed by 1767
Abstract
In this work, we theoretically studied the optical absorption properties of a layer-stacked cocrystal heterogeneous material Spe-TCNB cocrystal (STC) which is produced by supramolecular self-assembly of organic conjugated monomers SPE and TCNB. The highly ordered aggregate structure in the cocrystal STC will lead [...] Read more.
In this work, we theoretically studied the optical absorption properties of a layer-stacked cocrystal heterogeneous material Spe-TCNB cocrystal (STC) which is produced by supramolecular self-assembly of organic conjugated monomers SPE and TCNB. The highly ordered aggregate structure in the cocrystal STC will lead to intermolecular interactions such as π∼π, hydrogen bonds and van der Waals forces, resulting in significant charge transfer characteristics and large cross-sectional two-photon absorption characteristics. The physical mechanism of one-photon and two-photon charge transfer of cocrystal molecules is specifically discussed and the interaction between molecules and their role in charge transfer are quantitatively analyzed. We found that the charge transfer between molecular junctions composed of hydrogen bonds is mainly cross-bridge charge transfer, while the charge transfer between molecular junctions caused by accumulation is mainly cross-space charge transfer. This discovery is of great significance to the design of organic photoelectric functional materials. Full article
(This article belongs to the Special Issue Two-Dimensional Semiconductor Nanomaterials and Nanodevices)
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11 pages, 4174 KiB  
Article
Manipulable Electronic and Optical Properties of Two-Dimensional MoSTe/MoGe2N4 van der Waals Heterostructures
by Jiali Wang, Xiuwen Zhao, Guichao Hu, Junfeng Ren and Xiaobo Yuan
Nanomaterials 2021, 11(12), 3338; https://doi.org/10.3390/nano11123338 - 8 Dec 2021
Cited by 14 | Viewed by 2815
Abstract
van der Waals heterostructures (vdWHs) can exhibit novel physical properties and a wide range of applications compared with monolayer two-dimensional (2D) materials. In this work, we investigate the electronic and optical properties of MoSTe/MoGe2N4 vdWH under two different configurations using [...] Read more.
van der Waals heterostructures (vdWHs) can exhibit novel physical properties and a wide range of applications compared with monolayer two-dimensional (2D) materials. In this work, we investigate the electronic and optical properties of MoSTe/MoGe2N4 vdWH under two different configurations using the VASP software package based on density functional theory. The results show that Te4-MoSTe/MoGe2N4 vdWH is a semimetal, while S4-MoSTe/MoGe2N4 vdWH is a direct band gap semiconductor. Compared with the two monolayers, the absorption coefficient of MoSTe/MoGe2N4 vdWH increases significantly. In addition, the electronic structure and the absorption coefficient can be manipulated by applying biaxial strains and changing interlayer distances. These studies show that MoSTe/MoGe2N4 vdWH is an excellent candidate for high-performance optoelectronic devices. Full article
(This article belongs to the Special Issue Two-Dimensional Semiconductor Nanomaterials and Nanodevices)
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Review

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38 pages, 11628 KiB  
Review
Carbon Dots: Synthesis, Properties and Applications
by Lin Cui, Xin Ren, Mengtao Sun, Haiyan Liu and Lixin Xia
Nanomaterials 2021, 11(12), 3419; https://doi.org/10.3390/nano11123419 - 16 Dec 2021
Cited by 169 | Viewed by 20012
Abstract
Carbon dots (CDs) are known as the rising star of carbon-based nanomaterials and, by virtue of their unique structure and fascinating properties, they have attracted considerable interest in different fields such as biological sensing, drug delivery, photodynamic therapy, photocatalysis, and solar cells in [...] Read more.
Carbon dots (CDs) are known as the rising star of carbon-based nanomaterials and, by virtue of their unique structure and fascinating properties, they have attracted considerable interest in different fields such as biological sensing, drug delivery, photodynamic therapy, photocatalysis, and solar cells in recent years. Particularly, the outstanding electronic and optical properties of the CDs have attracted increasing attention in biomedical and photocatalytic applications owing to their low toxicity, biocompatibility, excellent photostability, tunable fluorescence, outstanding efficient up-converted photoluminescence behavior, and photo-induced electron transfer ability. This article reviews recent progress on the synthesis routes and optical properties of CDs as well as biomedical and photocatalytic applications. Furthermore, we discuss an outlook on future and potential development of the CDs based biosensor, biological dye, biological vehicle, and photocatalysts in this booming research field. Full article
(This article belongs to the Special Issue Two-Dimensional Semiconductor Nanomaterials and Nanodevices)
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