Special Issue "Transmission Electron Microscopy for Nanomaterials Research Advances"

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Synthesis, Interfaces and Nanostructures".

Deadline for manuscript submissions: 30 November 2023 | Viewed by 762

Special Issue Editors

Dr. Antonietta Taurino
E-Mail Website
Guest Editor
Institute for Microelectronics and Microsystems, National Research Council, Via Monteroni, 73100 Lecce, Italy
Interests: physics of matter; transmission electron microscopy (TEM); scanning electron microscopy (SEM); analytical techniques in SEM and TEM; focused ion beam (FIB); nanostructured metal oxides; low-dimensional semiconducting materials; nanoplasmonic materials
Dr. Elvio Carlino
E-Mail Website
Guest Editor
Institute of Crystallography, National Research Council, Via Amendola 122/O, 70126 Bari, Italy
Interests: physics; electron microscopy; solid state physics; atomic resolution imaging and spectroscopies in TEM; electron diffraction; convergent beam electron diffraction (CBED); coherent electron diffraction imaging; in-line electron holography; low-dose atomic resolution imaging in TEM
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Since Ruska and Knoll proof of concept of transmission electron microscope, in 1931, technological advances and methodological development have made Transmission Electron Microscopy (TEM) a complex discipline, counting a vast variety of approaches to understand the morphological, structural, chemical and magnetic properties of the matter at the highest spatial resolution. Due to its strong transversality and high flexibility, TEM enables to solve fundamental and applied research problems, contributing to the progress in many fields of knowledge, such as physics, materials science, biology, medicine, engineering, chemistry, nanoscience and nanotechnology.

The last years have seen a further boost in TEM thanks to the introduction of effective aberration correctors for electron lenses, new detectors for imaging, diffraction and spectroscopies, monochromators on primary beam, new capabilities for in operando experiments, new tools for cryoEM, all complemented by the huge progress in computer science, pressing the development of novel methods to investigate organic and inorganic matter.

This special issue focuses on TEM studies for nanomaterials research advances. An upcoming aim is to show how the most recent technological and methodological developments in TEM impact on the comprehension of fundamental and subtle properties of nanomaterials, supplying the necessary knowledge for basic understanding of the nanoscience phenomena and for conscious design of new nanomaterials.

It is our pleasure to announce the opening of the submission for this special issue.

Full papers, communications, and reviews are all welcome.

Dr. Antonietta Taurino
Dr. Elvio Carlino
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.


  • electron diffraction
  • 4DSTEM
  • electron holography
  • TEM tomography
  • EELS
  • EDS
  • in operando
  • cryoEM

Published Papers (1 paper)

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Role of Interdiffusion and Segregation during the Life of Indium Gallium Arsenide Quantum Dots, from Cradle to Grave
Nanomaterials 2022, 12(21), 3850; https://doi.org/10.3390/nano12213850 - 31 Oct 2022
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This article summarizes our understanding of the interplay between diffusion and segregation during epitaxial growth of InGaAs and InAs quantum dots. These quantum dots form spontaneously on flat GaAs (001) single-crystalline substrates by the so-called Stranski-Krastanow growth mechanism once a sufficient amount of [...] Read more.
This article summarizes our understanding of the interplay between diffusion and segregation during epitaxial growth of InGaAs and InAs quantum dots. These quantum dots form spontaneously on flat GaAs (001) single-crystalline substrates by the so-called Stranski-Krastanow growth mechanism once a sufficient amount of indium has accumulated on the surface. Initially a perfectly flat wetting layer is formed. This strained layer then starts to roughen as strain increases, leading first to small, long-range surface undulations and then to tiny coherent islands. These continue to grow, accumulating indium both from the underlying wetting layer by lateral indium segregation and from within these islands by vertical segregation, which for InGaAs deposition results in an indium-enriched InGaAs alloy in the centre of the quantum dots. For pure InAs deposition, interdiffusion also results in an InGaAs alloy. Further deposition can lead to the formation of misfit dislocations that nucleate at the edges of the islands and are generally sought to be avoided. Overgrowth by GaAs or InGaAs alloys with low indium content commences preferentially between the islands, avoiding their strained edges, which initially leads to trench formation. Further deposition is necessary to cap these quantum dots effectively and to re-gain an almost flat surface that can then be used for subsequent deposition of multiple layers of quantum dots as needed for many optoelectronic devices. Full article
(This article belongs to the Special Issue Transmission Electron Microscopy for Nanomaterials Research Advances)
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