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Nanomaterials
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Study on Photoelectric Properties and Applications of Nanostructured Materials
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Study on Photoelectric Properties and Applications of Nanostructured Materials

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanophotonics Materials and Devices".

Deadline for manuscript submissions: closed (10 November 2024) | Viewed by 5735

Special Issue Editors

Prof. Dr. Ping Yang

E-Mail Website
Guest Editor
School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013, China
Interests: microelectronic packaging; micro/nano/optoelectronic devices; cross scale modeling and design; life prediction and reliability design; dynamics design; lightweight technology
Prof. Dr. Yunqing Tang

E-Mail Website
Co-Guest Editor
School of Mechanical Engineering, Shandong University, Jinan 250061, China
Interests: material design; material machining; friction and wear; nanoscale heat transfer; computational materials science
Special Issues, Collections and Topics in MDPI journals
Dr. Yanfang Zhao

E-Mail Website
Co-Guest Editor
School of Mechanical Engineering, Jiangsu University of Technology, Changzhou 213001, China
Interests: semiconductor materials; optoelectronic devices; ultra-thin conductive film; calculated material
Dr. Bing Yang

E-Mail Website
Co-Guest Editor
Centre for Advanced Laser Manufacturing (CALM), School of Mechanical Engineering, Shandong University of Technology, Zibo 255000, China
Interests: nanoscale thermal transport; interfacial thermal conductance; computational materials; laser micro-/nano- processing
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

The advantages of photoelectric properties greatly expend applications of nanostructured materials in fields of biomedicine, optoelectronic devices, solar cells, and photocatalysis. Nanomaterials have a variety of structures such as films, nanowires (rods), nanosheets, nanoparticles, and quantum dots. Through precise synthesis, the regulation of nanostructures, and the control of the self-assembly of nanomaterials, the regulation of light absorption (reflection or transmission or excitation) bands and the enhancement of electrical properties can be realized, promoting the continuously improving photoelectric conversion efficiency and highly developed functionalization. Approaches such as defect recombination and surface modification are proven to be effective at inducing nanostructures for advanced photoelectric properties. Considering that the considerable heat generated during energy conversion would seriously affect photoelectric properties, reliability, and lifetime, thermal management is also critical for the design of nanostructured materials, especially for application in power devices.

We are pleased to invite you to contribute original and critical articles on the photoelectric properties and related applications of nanostructured materials.

This Special Issue aims to introduce the latest research on photoelectric properties and related applications of nanostructured materials. The photoelectric properties of nanostructured materials have broad application prospects in biomedicine, semiconductor optoelectronic devices, and new energy, and their further development is of great significance for breakthroughs in many fields.

In this Special Issue, original research articles and reviews are welcome. Research areas may include (but are not limited to) the following:

Synthesis and characterization of nanostructures, modification and enhancement of photoelectrical properties, absorption, reflection, or excitation properties of light, generation, transport, and transfer of charge carriers, applications of nanostructures in biomedicine, semiconductor optoelectronic devices, new energy, surface modification of nanostructures, interfacial charge transfer in nanostructured materials, preparation of new nanomaterials, and thermal management.

We look forward to receiving your contributions.

Prof. Dr. Ping Yang
Prof. Dr. Yunqing Tang
Dr. Yanfang Zhao
Dr. Bing Yang
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • nanostructured materials
  • low-dimensional materials
  • surface modification
  • hetero-/homo-junction
  • biomedical imaging
  • photoelectrocatalysis
  • photoelectric conversion
  • photoelectric sensing
  • thermal management
  • semiconductor optoelectronic devices

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Further information on MDPI's Special Issue policies can be found here.

Published Papers (5 papers)

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Research

15 pages, 3309 KiB  
Article
Emission Enhancement of ZnO Thin Films in Ultraviolet Wavelength Region Using Au Nano-Hemisphere on Al Mirror Structures
by Shogo Tokimori, Kai Funato, Kenji Wada, Tetsuya Matsuyama and Koichi Okamoto
Nanomaterials 2025, 15(5), 400; https://doi.org/10.3390/nano15050400 - 6 Mar 2025
Viewed by 555
Abstract
Using a heterogeneous metal Nano Hemisphere on Mirror (NHoM) structure, composed of an Al2O3 thin film and Au nano-hemispheres formed on a thick Al film, we successfully generated two distinct surface plasmon resonance (SPR) peaks: one in the ultraviolet (UV) [...] Read more.
Using a heterogeneous metal Nano Hemisphere on Mirror (NHoM) structure, composed of an Al2O3 thin film and Au nano-hemispheres formed on a thick Al film, we successfully generated two distinct surface plasmon resonance (SPR) peaks: one in the ultraviolet (UV) wavelength range below 400 nm and another in the visible range between 600 and 700 nm. This NHoM structure can be fabricated through a straightforward process involving deposition, sputtering, and annealing, enabling rapid, large-area formation. By adjusting the thickness of the Al2O3 spacer layer in the NHoM structure, we precisely controlled the localized surface plasmon resonance (LSPR) wavelength, spanning a wide range from the UV to the visible spectrum. Through this tuning, we enhanced the band-edge UV emission of the ZnO thin film by a factor of 35. Temperature-dependent measurements of emission intensity revealed that the NHoM structure increased the internal quantum efficiency (IQE) of the ZnO thin film from 8% to 19%. The heterometallic NHoM structure proposed in this study enables wide-ranging control of SPR wavelengths and demonstrates significant potential for applications in enhancing luminescence in the deep ultraviolet (DUV) region, where luminescence efficiency is typically low. Full article
(This article belongs to the Special Issue Study on Photoelectric Properties and Applications of Nanostructured Materials)
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13 pages, 4086 KiB  
Article
Surface Microstructure Enhanced Cryogenic Infrared Light Emitting Diodes for Semiconductor Broadband Upconversion
by Peng Bai, Hanbin Wang, Rongrong Lv, Yi Wang, Yinqiao Li, Shangjie Han, Jiaxuan Cai, Ning Yang, Weidong Chu, Yan Xie, Meng Chen, Yingxin Wang and Ziran Zhao
Nanomaterials 2024, 14(24), 2039; https://doi.org/10.3390/nano14242039 - 19 Dec 2024
Viewed by 734
Abstract
Broadband upconversion has various applications in solar photovoltaic, infrared and terahertz detection imaging, and biomedicine. The low efficiency of the light-emitting diodes (LEDs) limits the broadband upconversion performance. In this paper, we propose to use surface microstructures to enhance the electroluminescence efficiency (ELE) [...] Read more.
Broadband upconversion has various applications in solar photovoltaic, infrared and terahertz detection imaging, and biomedicine. The low efficiency of the light-emitting diodes (LEDs) limits the broadband upconversion performance. In this paper, we propose to use surface microstructures to enhance the electroluminescence efficiency (ELE) of LEDs. Systematical investigations on the cryogenic-temperature performances of microstructure-coupled LEDs, including electroluminescence efficiency, luminescence spectrum, and recombination rate, have been carried out by elaborating their enhancement mechanism and light emitting characteristics both experimentally and theoretically. We have revealed that the reason for the nearly 35% ELE enhancement of the optimized structure under cryogenic temperature and weak injection current is the efficient carrier injection efficiency and the high recombination rate in the active region. We also compare studies of the surface luminescence uniformity of the optimized LED with that of the unoptimized device. This work gives a precise description, and explanation of the performance of the optimized microstructure coupled LED at low temperatures, providing important guidance and inspiration for the optimization of broadband upconverter in the cryogenic temperature region. Full article
(This article belongs to the Special Issue Study on Photoelectric Properties and Applications of Nanostructured Materials)
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15 pages, 5473 KiB  
Article
Microwave-Field-Optimized GO/TiO2 Nanomaterials for Enhanced Interfacial Charge Transfer in Photocatalysis
by Xu Duan, Weizao Liu and Jing Guo
Nanomaterials 2024, 14(23), 1912; https://doi.org/10.3390/nano14231912 - 28 Nov 2024
Cited by 1 | Viewed by 722
Abstract
The swift recombination of photo-induced electrons and holes is a major obstacle to the catalytic efficiency of TiO2 nanomaterials, but the incorporation of graphene oxide and out-field modification is considered a potent method to augment photocatalytic properties. In this work, a series [...] Read more.
The swift recombination of photo-induced electrons and holes is a major obstacle to the catalytic efficiency of TiO2 nanomaterials, but the incorporation of graphene oxide and out-field modification is considered a potent method to augment photocatalytic properties. In this work, a series of GO/TiO2 photocatalysts were successfully optimized by a microwave field. As determined by transient photocurrent response and electrochemical impedance spectroscopy (EIS) tests, microwave irradiation at 600 W for 5 min on the GO/TiO2 photocatalyst promoted interfacial charge transfer and suppressed charge recombination. Through systematic characterizations, GT(600/5) exhibited the highest photooxidation rate (81.5%, 60 min) of Rhodamine B under visible light compared to other homologous samples, owing to the minimum grain size (16.914 nm), enlarged specific surface area (151 m2/g), maximum light response wavelength (510 nm), narrowest bandgap width (2.90 eV), and stronger oxidized hydroxyl radicals (•OH). Given the environmental friendliness, greenness, and sustainability, this study could present an efficient and economical strategy for synthesizing and fine-tuning photocatalysts. Full article
(This article belongs to the Special Issue Study on Photoelectric Properties and Applications of Nanostructured Materials)
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13 pages, 5766 KiB  
Article
First Principles Study of p-Type Transition and Enhanced Optoelectronic Properties of g-ZnO Based on Diverse Doping Strategies
by Kaiqi Bao, Yanfang Zhao, Wei Ding, Yuanbin Xiao and Bing Yang
Nanomaterials 2024, 14(23), 1863; https://doi.org/10.3390/nano14231863 - 21 Nov 2024
Viewed by 786
Abstract
By utilizing first principles calculations, p-type transition in graphene-like zinc oxide (g-ZnO) through elemental doping was achieved, and the influence of different doping strategies on the electronic structure, energy band structure, and optoelectronic properties of g-ZnO was investigated. This research study delves into [...] Read more.
By utilizing first principles calculations, p-type transition in graphene-like zinc oxide (g-ZnO) through elemental doping was achieved, and the influence of different doping strategies on the electronic structure, energy band structure, and optoelectronic properties of g-ZnO was investigated. This research study delves into the effects of strategies such as single-acceptor doping, double-acceptor co-doping, and donor–acceptor co-doping on the properties of g-ZnO. This study found that single-acceptor doping with Li and Ag elements can form shallow acceptor levels, thereby facilitating p-type conductivity. Furthermore, the introduction of the donor element F can compensate for the deep acceptor levels formed by double-acceptor co-doping, transforming them into shallow acceptor levels and modulating the energy band structure. The co-doping strategy involving double-acceptor elements and a donor element further optimizes the properties of g-ZnO, such as reducing the bandgap and enhancing carrier mobility. Additionally, in terms of optical properties, g-Zn14Li2FO15 demonstrates outstanding performance in the visible-light region compared with other doping systems, especially generating a higher absorption peak around the wavelength of 520 nm. These findings provide a theoretical foundation for the application of g-ZnO in optoelectronic devices. Full article
(This article belongs to the Special Issue Study on Photoelectric Properties and Applications of Nanostructured Materials)
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11 pages, 5003 KiB  
Article
High-Energy Mode-Locked Pulse Er-Doped Fiber Laser-Based GeTe as Saturable Absorber
by Shouqian Tang, Qiuyan Sheng, Faming Ye, Qi Li, Siyuan Xiong, Caixun Bai, Cheng Lu, Huanian Zhang, Guomei Wang and Wenfei Zhang
Nanomaterials 2023, 13(16), 2331; https://doi.org/10.3390/nano13162331 - 14 Aug 2023
Cited by 1 | Viewed by 1670
Abstract
High-energy Er-doped fiber laser with high conversion efficiency is reported, which is mode-locked by a germanium telluride (GeTe)-based saturable absorber (SA). By adjusting the direction of the polarization controller (PC), a high-energy pulse with a central wavelength of 1533.1 nm and a fundamental [...] Read more.
High-energy Er-doped fiber laser with high conversion efficiency is reported, which is mode-locked by a germanium telluride (GeTe)-based saturable absorber (SA). By adjusting the direction of the polarization controller (PC), a high-energy pulse with a central wavelength of 1533.1 nm and a fundamental repetition frequency of 1.58 MHz is achieved. Under the pump power of 450.1 mW, the maximum average output power is 50.48 mW, and the single-pulse energy is 32 nJ. It is worth noting that the optical-to-optical conversion efficiency has reached about 11.2%. The experimental results indicate that GeTe performs excellently as SAs for obtaining mode-locked fiber lasers and plays an extremely important role in high-energy fiber lasers. Full article
(This article belongs to the Special Issue Study on Photoelectric Properties and Applications of Nanostructured Materials)
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