Nitride Semiconductors: Nanomaterials, Devices and Applications
A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanophotonics Materials and Devices".
Deadline for manuscript submissions: 23 January 2026 | Viewed by 8
Special Issue Editor
Interests: AlGaN superlattice; p-AlGaN; DUV; LED; HEMT
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
Gallium nitride and its associated alloys are extensively utilized in fabricating light-emitting diodes (LEDs), laser diodes (LDs), high-electron-mobility transistors (HEMTs), and photodetectors, which are essential for electronic applications requiring high power, high frequency, and operation at elevated temperatures. Concurrently, integrating III-nitride materials with two-dimensional materials, such as graphene, is anticipated to address the challenges associated with the traditional epitaxial processes, particularly the difficulty in detaching the grown layers.
As a result of advancements in epitaxial technology, the quality of Ⅲ-nitride materials has significantly improved; however, numerous challenges persist. These challenges encompass the growth of Ⅲ-nitride materials, managing defects, and the efficiency of doping processes.
This Special Issue concentrates on the scientific and engineering dimensions of III-nitride materials and their integration with two-dimensional materials, elucidating the novel physical phenomena manifesting within the fundamental properties of these materials, the methodologies for material growth, the design of device structures, and the achievement of cutting-edge electronic devices.
In this Special Issue, original research articles and reviews are welcome. Research areas may include (but are not limited to) the following:
- III-nitride materials growth;
- Defect control;
- Doping efficiency;
- Device design;
- Reliability analysis;
- III-nitride combination with two-dimensional materials.
We look forward to receiving your contributions.
Dr. Xiaowei Zhou
Guest Editor
Manuscript Submission Information
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Keywords
- III-nitride
- photoelectronic device
- electronic devices
- defect
- doping efficiency
- reliability analysis
- two-dimensional materials
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