Special Issue "Luminescent Nanomaterials and Their Applications"

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Synthesis, Interfaces and Nanostructures".

Deadline for manuscript submissions: 31 May 2021.

Special Issue Editor

Dr. Ashish Arora
Website1 Website2
Guest Editor
Institute of Physics and Center for Nanotechnology, University of Münster, 48149 Münster, Germany
Interests: Transition metal dichalcogenides; monolayer; semiconductor; magneto-optics; optical spectroscopy; photoluminescence; absorption

Special Issue Information

Dear Colleagues,

In the past two decades, luminescence nanomaterials have attracted a considerable amount of interest because of their unique physicochemical, structural, and spectroscopic characteristics. Apart from their applications in classic phosphor technologies such as in fluorescent lamps, light emitting diodes, emission displays, X-ray detectors, and tomography, luminescent nanomaterials continue to provide breakthroughs in the areas of security (banknotes, identification documents, etc.), biological labeling (e.g., in research and for non-invasive medical diagnosis), sensing, and photovoltaics. It is possible to finely tune their spectroscopic and physicochemical properties suiting specific requirements. Important examples of these materials include semiconductor quantum dots, carbon dots, metal-doped nanomaterials, metal nanoclusters, or organic–inorganic composites and hybrids.

The present multidisciplinary Special Issue aims to publish state-of-the-art manuscripts concerning synthesis, investigations, and applications of luminescent nanomaterials in various areas of research. The topics of the issue tentatively include but are not limited to:

  • Synthesis of novel luminescent nanomaterials;
  • Nanostructured optical materials for biomedical applications, such as biological imaging, biosensors, and photothermal therapy;
  • Luminescent nanoparticles for lighting, imaging, security, and sensing applications from UV to mid-infrared spectral regions;
  • New inorganic and organic nanomaterials for spectral conversion;
  • Quantum cutting, upconversion, and luminescence downshifting nanomaterials;
  • Transition metal dichalcogenide single-photon emitters such as WSe2, hBN, etc.

Dr. Ashish Arora
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2200 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • luminescence
  • solid-state lighting
  • optical nanomaterials
  • nanoparticles synthesis
  • optical sensing
  • imaging
  • quantum cutting
  • spectral conversion
  • luminescence down shifting
  • upconversion
  • biological labeling
  • biosensing
  • photothermal therapy
  • quantum dots
  • carbon nanotubes
  • 2D materials
  • transition metal dichalcogenides
  • large band gap semiconductors
  • rare earth doped luminescent materials
  • spectroscopic properties
  • absorption
  • photovoltaics

Published Papers (2 papers)

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Research

Open AccessArticle
O-Band Emitting InAs Quantum Dots Grown by MOCVD on a 300 mm Ge-Buffered Si (001) Substrate
Nanomaterials 2020, 10(12), 2450; https://doi.org/10.3390/nano10122450 - 07 Dec 2020
Abstract
The epitaxy of III-V semiconductors on silicon substrates remains challenging because of lattice parameter and material polarity differences. In this work, we report on the Metal Organic Chemical Vapor Deposition (MOCVD) and characterization of InAs/GaAs Quantum Dots (QDs) epitaxially grown on quasi-nominal 300 [...] Read more.
The epitaxy of III-V semiconductors on silicon substrates remains challenging because of lattice parameter and material polarity differences. In this work, we report on the Metal Organic Chemical Vapor Deposition (MOCVD) and characterization of InAs/GaAs Quantum Dots (QDs) epitaxially grown on quasi-nominal 300 mm Ge/Si(001) and GaAs(001) substrates. QD properties were studied by Atomic Force Microscopy (AFM) and Photoluminescence (PL) spectroscopy. A wafer level µPL mapping of the entire 300 mm Ge/Si substrate shows the homogeneity of the three-stacked InAs QDs emitting at 1.30 ± 0.04 µm at room temperature. The correlation between PL spectroscopy and numerical modeling revealed, in accordance with transmission electron microscopy images, that buried QDs had a truncated pyramidal shape with base sides and heights around 29 and 4 nm, respectively. InAs QDs on Ge/Si substrate had the same shape as QDs on GaAs substrates, with a slightly increased size and reduced luminescence intensity. Our results suggest that 1.3 μm emitting InAs QDs quantum dots can be successfully grown on CMOS compatible Ge/Si substrates. Full article
(This article belongs to the Special Issue Luminescent Nanomaterials and Their Applications)
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Open AccessArticle
Femtosecond Pulse Ablation Assisted Mg-ZnO Nanoparticles for UV-Only Emission
Nanomaterials 2020, 10(7), 1326; https://doi.org/10.3390/nano10071326 - 06 Jul 2020
Abstract
The need for improved UV emitting luminescent materials underscored by applications in optical communications, sterilization and medical technologies is often addressed by wide bandgap semiconducting oxides. Among these, the Mg-doped ZnO system is of particular interest as it offers the opportunity to tune [...] Read more.
The need for improved UV emitting luminescent materials underscored by applications in optical communications, sterilization and medical technologies is often addressed by wide bandgap semiconducting oxides. Among these, the Mg-doped ZnO system is of particular interest as it offers the opportunity to tune the UV emission by engineering its bandgap via doping control. However, both the doped system and its pristine congener, ZnO, suffer from being highly prone to parasitic defect level emissions, compromising their efficiency as light emitters in the ultraviolet region. Here, employing the process of femtosecond pulsed laser ablation in a liquid (fs-PLAL), we demonstrate the systematic control of enhanced UV-only emission in Mg-doped ZnO nanoparticles using both photoluminescence and cathodoluminescence spectroscopies. The ratio of luminescence intensities corresponding to near band edge emission to defect level emission was found to be six-times higher in Mg-doped ZnO nanoparticles as compared to pristine ZnO. Insights from UV-visible absorption and Raman analysis also reaffirm this defect suppression. This work provides a simple and effective single-step methodology to achieve UV-emission and mitigation of defect emissions in the Mg-doped ZnO system. This is a significant step forward in its deployment for UV emitting optoelectronic devices. Full article
(This article belongs to the Special Issue Luminescent Nanomaterials and Their Applications)
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