Semiconductor Nanomaterials for Optoelectronic Applications
A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".
Deadline for manuscript submissions: closed (10 July 2024) | Viewed by 8915
Special Issue Editor
Special Issue Information
Dear Colleagues,
In the past decades, nanotechnology has been applied to reduce the size or dimension of optoelectronic devices in which the quantum confinement of electron and hole carriers will practically optimize energy consumption. In this new trend of sustainable optoelectronic applications, high-quality semiconductor nanomaterials are convincing candidates for the fabrication of nanometer-sized optoelectronic devices. There are two methods of nanomaterial fabrication for nanodevices: the top-down and the bottom-up approach. The top-down lithographed approach (e.g., by EUV, FIB, e-beam writer) is the favorite for the manufacturing process, but the bottom-up self-assembling approach (e.g., MOCVD, MBE) is more advantageous when it comes to sample growth of defect-free and homogenous chemical composition. Both approaches benefit from the quantum effect of nanodevices derived from these semiconductor nanomaterials.
Therefore, we cordially invite professors and researchers to submit original manuscripts or reviewed articles to this Special Issue, including but not limited to the topics of methodology, fabrication, characterization, and properties for optoelectronic nanodevice applications.
Prof. Dr. Ikai Lo
Guest Editor
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Keywords
- nanomaterials
- nanotechnology
- EUV
- FIB
- e-beam writer
- MOCVD
- MBE
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