Semiconductor Materials for Nanoelectronic and Optoelectronic Quantum Devices

Dear Colleagues,

In a Si-MOSFET device, a conducting channel has been created by applying gate voltage for current flow between the source and drain; moreover, a fin field-effect transistor (FinFET) has now been well-established with a channel length from 2nm to 1.8nm, even down to 1.4nm (so-called 18A technology, 1.8 nm = 18 angstroms) to challenge Golden Moore's Law. Quantum mechanics plays a significant role in nanoelectronic systems. The diameter of a Si atom is about 2 angstroms, indicating that the channel (shorter than nine Si atoms) is involved with carrier transportation that has a quantum ballistic model instead of the traditional Drude model. Compound semiconductors are prospectively applied to high-temperature power devices, high-efficiency micro-LEDs, or quantum computer qubits. To engineer the band profile of semiconductor materials, one can select the host materials of IV-IV (e.g., SiC, SiGe), III-V (e.g., III-Arenites, III-Nitrides), or II-VI compounds (e.g., ZnO, ZnS, ZnSe, CdS, CdSe, CdTe, HgTe, etc.) by means of DUV lithography or self-assembling nanotechnology. For instance, in the context of a band gap versus lattice constant, the binary and ternary compounds of the III-nitride system can cover a wide range of the electromagnetic spectrum, from deep ultraviolet to far-infrared for applications of nanoelectronics or micro-LEDs.

This Special Issue will compile recent developments in the field of semiconductor materials including IV-IV, III-V, and II-VI compounds.  The articles presented in this Special Issue will cover various topics, ranging from but not limited to the optimization of deposition methods, thin-film preparations, nanosensors, catalysis, self-assembly, and characterization for the development of nanoelectronic and optoelectronic device applications.

Prof. Dr. Ikai Lo
Guest Editor

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