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Nanomaterials
Special Issues
Emerging Two-Dimensional Semiconductors and Magnetic Materials for Next-Generation Spintronics
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Emerging Two-Dimensional Semiconductors and Magnetic Materials for Next-Generation Spintronics

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "2D and Carbon Nanomaterials".

Deadline for manuscript submissions: 31 May 2024 | Viewed by 1771

Special Issue Editor

Dr. Jun Zhou

E-Mail Website
Guest Editor
A-Star, Institute of Materials Research and Engineering, Singapore City, Singapore
Interests: condensed matter theory; electronic structure; magnetic properties; VASP; density functional theory

Special Issue Information

Dear Colleagues,

Two-dimensional (2D) semiconducting magnetic materials have garnered widespread attention in condensed matter research due to their unique properties and vast potential applications in areas such as low-power spintronics, sensors, data storage, quantum computing, and optical communications. These materials have challenged fundamental concepts of magnetism by exhibiting unusual behavior at the single layer limit, including controllable magnetic phase transitions by external stimuli and spin–valley coupled excitonic physics, etc. Consequently, the field of 2D semiconducting magnets is expanding rapidly, offering an unprecedented opportunity for exploring fundamental concepts and developing the new spintronic technologies.

This Special Issue offers a premier interdisciplinary platform for novel and cutting-edge theoretical and experimental research on all aspects of 2D semiconducting magnets and their associated heterostructures and devices. Research topics of interest include, but are not limited to:

  • Data-driven, high-throughput screening and machine learning techniques for the discovery of new magnetic semiconducting 2D materials;
  • The coupling of magnetism to other degrees of freedom, such as ferrovalley, ferroelectricity, and ferroelasticity;
  • Tuning the properties of 2D semiconducting magnetism, such as by strain, defects, surface adsorbents, forming heterostructures, and sliding mechanisms;
  • The discovery and exploration of novel properties of 2D semiconducting magnets using in-depth first-principles and computational approaches;
  • The experimental growth and characterization of 2D semiconducting magnets.

By focusing on these research topics, this Special Issue aims to advance our understanding of 2D semiconducting magnets and their potential applications, paving the way for the development of new technologies in the field of spintronics and beyond.

Dr. Jun Zhou
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • 2D semiconducting magnet
  • data-driven approach
  • machine learning
  • structure engineering
  • multiferroic
  • computational investigation
  • synthesis
  • characterization

Published Papers (2 papers)

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Research

13 pages, 3937 KiB  
Article
Strain-Induced Ferromagnetism in Monolayer T″-Phase VTe2: Unveiling Magnetic States and Anisotropy for Spintronics Advancement
by Xiaoting Tang, Jun Zhou, Nancy Lai Mun Wong, Jianwei Chai, Yi Liu, Shijie Wang and Xiaohe Song
Nanomaterials 2024, 14(8), 704; https://doi.org/10.3390/nano14080704 - 18 Apr 2024
Viewed by 379
Abstract
Two-dimensional (2D) ferromagnets have attracted significant interest for their potential in spintronic device miniaturization, especially since the discovery of ferromagnetic ordering in monolayer materials such as CrI3 and Fe3GeTe2 in 2017. This study presents a detailed investigation into the [...] Read more.
Two-dimensional (2D) ferromagnets have attracted significant interest for their potential in spintronic device miniaturization, especially since the discovery of ferromagnetic ordering in monolayer materials such as CrI3 and Fe3GeTe2 in 2017. This study presents a detailed investigation into the effects of the Hubbard U parameter, biaxial strain, and structural distortions on the magnetic characteristics of T″-phase VTe2. We demonstrate that setting the Hubbard U to 0 eV provides an accurate representation of the observed structural, magnetic, and electronic features for both bulk and monolayer T″-phase VTe2. The application of strain reveals two distinct ferromagnetic states in the monolayer T″-phase VTe2, each characterized by minor structural differences, but notably different magnetic moments. The T″-1 state, with reduced magnetic moments, emerges under compressive strain, while the T″-2 state, featuring increased magnetic moments, develops under tensile strain. Our analysis also compares the magnetic anisotropy between the T and T″ phases of VTe2, highlighting that the periodic lattice distortion in the T″-phase induces an in-plane anisotropy, which makes it a material with an easy-axis of magnetization. Monte Carlo simulations corroborate our findings, indicating a high Curie temperature of approximately 191 K for the T″-phase VTe2. Our research not only sheds light on the critical aspects of the VTe2 system but also suggests new pathways for enhancing low-dimensional magnetism, contributing to the advancement of spintronics and straintronics. Full article
(This article belongs to the Special Issue Emerging Two-Dimensional Semiconductors and Magnetic Materials for Next-Generation Spintronics)
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11 pages, 3650 KiB  
Article
MoS2-Based Memristor: Robust Resistive Switching Behavior and Reliable Biological Synapse Emulation
by Yongfa Ling, Jiexin Li, Tao Luo, Ying Lin, Guangxin Zhang, Meihua Shou and Qing Liao
Nanomaterials 2023, 13(24), 3117; https://doi.org/10.3390/nano13243117 - 11 Dec 2023
Viewed by 947
Abstract
Memristors are recognized as crucial devices for future nonvolatile memory and artificial intelligence. Due to their typical neuron-synapse-like metal–insulator–metal(MIM) sandwich structure, they are widely used to simulate biological synapses and have great potential in advancing biological synapse simulation. However, the high switch voltage [...] Read more.
Memristors are recognized as crucial devices for future nonvolatile memory and artificial intelligence. Due to their typical neuron-synapse-like metal–insulator–metal(MIM) sandwich structure, they are widely used to simulate biological synapses and have great potential in advancing biological synapse simulation. However, the high switch voltage and inferior stability of the memristor restrict the broader application to the emulation of the biological synapse. In this study, we report a vertically structured memristor based on few-layer MoS2. The device shows a lower switching voltage below 0.6 V, with a high ON/OFF current ratio of 104, good stability of more than 180 cycles, and a long retention time exceeding 3 × 103 s. In addition, the device has successfully simulated various biological synaptic functions, including potential/depression propagation, paired-pulse facilitation (PPF), and long-term potentiation/long-term depression (LTP/LTD) modulation. These results have significant implications for the design of a two-dimensional transition-metal dichalcogenides composite material memristor that aim to mimic biological synapses, representing promising avenues for the development of advanced neuromorphic computing systems. Full article
(This article belongs to the Special Issue Emerging Two-Dimensional Semiconductors and Magnetic Materials for Next-Generation Spintronics)
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Planned Papers

The below list represents only planned manuscripts. Some of these manuscripts have not been received by the Editorial Office yet. Papers submitted to MDPI journals are subject to peer-review.

Title: Tuning of the band structure and magnetism of epitaxial magnetic topological materials Mn(BixSb1-x)2Te4
Authors: S.H. Su; F. C. Tai; P. Y. Chuang; C.M. Cheng; J. C. A. Huang
Affiliation: National Cheng Kung University
Abstract: Mn(BixSb1-x)2Te4 thin films have been grown by molecular beam epitaxy. By controlling the growth temperature and flux ratio of Bi and Sb, high-quality, single-crystalline c-axis oriented Mn(BixSb1-x)2Te4 samples can be prepared on Al2O3(0001) substrates, as verified by X-ray diffraction. The layered structure and thickness of the Mn(BixSb1-x)2Te4 films were characterized by transmission electron microscopy. The chemical composition was analyzed by energy-dispersive spectrometer, which verifies the stoichiometry of the films. The optical vibration modes were identified by Raman spectroscopy. The surface flatness of the films is strongly affected by the growth temperature and Bi/Sb flux ratio, as observed by atomic force microscopy. Angle-resolved photoemission spectroscopy reveals that topological surface states exist between the conduction band and valence band, indicating that Mn(BixSb1-x)2Te4 is a topological insulator. Moreover, the band structure can be tailored by changing the Bi/Sb ratio in Mn(BixSb1-x)2Te4, so that the films can be tuned from p-type (x=0) to n-type (0.65

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