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Nanomaterials
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Luminescent Rare-Earth Nanomaterials and Devices
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Luminescent Rare-Earth Nanomaterials and Devices

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanophotonics Materials and Devices".

Deadline for manuscript submissions: closed (30 April 2023) | Viewed by 3972

Special Issue Editors

Prof. Dr. Dang-Li Gao

E-Mail Website
Guest Editor
College of Science, Xi'an University of Architecture and Technology, Xi'an 710055, China
Interests: luminescence micro/nanomaterials; persistent phosphors; laser fabrication of luminescent heterojunction materials; energy conversion; anti-counterfeiting
Prof. Dr. Zuobin Tang

E-Mail Website
Guest Editor
School of Chemistry and Chemical Engineering, Xi'an University of Architecture and Technology, Xi'an 710055, China
Interests: luminescence materials; LED phosphors; persistent phosphors; NIR emission

Special Issue Information

Dear Colleagues,

In the past few decades, rare-earth-doped nanomaterials have attracted a worldwide research interest from academics and  researchers. Nanostructure design and engineering provide an additional dimension to control both physical and chemical interactions of rare-earths in the nanoscopic scale, leading to the development of diverse functional nanomaterials. These newly developed nanomaterials enable the multidisciplinary applications of bioimaging, drug delivery, therapeutics, neuroscience, sensing and detection, catalysis, light emission, information storage and encryption, anti-counterfeiting, nanolasing, and optical communication.

Further progress in this field will drive the integration of multidisciplinary knowledge and technologies to explore new functions of rare earth-doped nanomaterials. Moreover, the development of new rare earth-doped nanomaterials will further promote the discovery of optical properties for breakthrough applications in diverse fields, such as photodetectors, optogenetics, immunotherapy, super-resolution imaging, optoelectronics, and many others.

This Special Issue of Nanomaterials will attempt to cover the most recent advances in “Luminescent Rare-Earth Nanomaterials and Devices”, concerning not only the design, synthesis, and characterization of such luminescent nanomaterials, but also reports of their functional and smart properties to be applied in diverse areas.

Prof. Dr. Dang-Li Gao
Prof. Dr. Zuobin Tang
Guest Editors

Manuscript Submission Information

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Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • rare earth luminescent nanomaterials
  • upconversion luminescence
  • rare earth-based nanophosphors
  • luminescent properties
  • synthesis of luminescent nanoparticles
  • optoelectronic devices
  • bioimaging applications
  • biological applications

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Published Papers (4 papers)

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Research

12 pages, 5304 KiB  
Article
Surface Vertical Multi-Emission Laser with Distributed Bragg Reflector Feedback from CsPbI3 Quantum Dots
by Xueqiong Su, Yong Pan, Dongwen Gao, Jin Wang, Huimin Yu, Ruixiang Chen, Baolu Guan, Xinyu Yang, Yimeng Wang and Li Wang
Nanomaterials 2023, 13(10), 1669; https://doi.org/10.3390/nano13101669 - 18 May 2023
Cited by 5 | Viewed by 2123
Abstract
Quantum dots (QDs) laser has become an important way to solve micro-application problems in many fields. However, single wavelength distributed Bragg reflector (DBR) has many limitations in practical applications, such as signal transmission. How to realize multiwavelength DBR lasing output simply is a [...] Read more.
Quantum dots (QDs) laser has become an important way to solve micro-application problems in many fields. However, single wavelength distributed Bragg reflector (DBR) has many limitations in practical applications, such as signal transmission. How to realize multiwavelength DBR lasing output simply is a challenge. To achieve a stable multi-wavelength quantum dots laser in the near-infrared region, the perovskite CsPbI3 QDs laser with DBR structure is developed in this paper. A tetragonal crystal structure with complete bonding information and no defect is explained by X-ray diffractions (XRD) and Raman spectrum. The cross-section morphology of the DBR laser and the surface morphology of QDs is measured by scanning electron microscope (SEM) and transmission electron microscope (TEM), respectively. An elliptical light propagation field and a double wavelength laser radiation are obtained from the finite-difference time-domain (FDTD) simulation. The output of the three wavelength lasers at 770 nm, 823 nm, and 873 nm is measured. The emission time of a DBR laser is about 2 h, and the average fluorescence quantum yield is 60%. The cavity length selection and energy level model are put in place to clearly see the working mechanism. All the results suggest that an effective and stable CsPbI3 quantum dots DBR laser is realized. Full article
(This article belongs to the Special Issue Luminescent Rare-Earth Nanomaterials and Devices)
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9 pages, 7916 KiB  
Article
Enhanced Photoluminescence of Gd3Al4GaO12: Cr3+ by Energy Transfers from Co-Doped Dy3+
by Yu Zhang, Xiang Li, Dahai Hu, Qier Sa, Xinran Wang, Fengxiang Wang, Kaixuan Wang, Xuelian Zhou, Zhiqiang Song, Yongfu Liu and Kefu Chao
Nanomaterials 2022, 12(23), 4183; https://doi.org/10.3390/nano12234183 - 25 Nov 2022
Cited by 8 | Viewed by 2181
Abstract
LEDs for plant lighting have attracted wide attention and phosphors with good stability and deep-red emission are urgently needed. Novel Cr3+ and Dy3+ co-doped Gd3Al4GaO12 garnet (GAGG) phosphors were successfully prepared through a conventional solid-state reaction. [...] Read more.
LEDs for plant lighting have attracted wide attention and phosphors with good stability and deep-red emission are urgently needed. Novel Cr3+ and Dy3+ co-doped Gd3Al4GaO12 garnet (GAGG) phosphors were successfully prepared through a conventional solid-state reaction. Using blue LEDs, a broadband deep-red emission at 650–850 nm was obtained due to the Cr3+ 4T2 → 4A2 transition. When the Cr3+ concentration was fixed to 0.1 mol, the crystal structure did not change with an increase in the Dy3+ doping concentration. The luminous intensity of the optimized GAGG:0.1Cr3+, 0.01Dy3+ was 1.4 times that of the single-doped GAGG:0.1Cr3+. Due to the energy transfer from Dy3+ to Cr3+, the internal quantum efficiency reached 86.7%. The energy transfer from Dy3+ to Cr3+ can be demonstrated through luminescence spectra and fluorescence decay. The excellent properties of the synthesized phosphor indicate promising applications in the agricultural industry. Full article
(This article belongs to the Special Issue Luminescent Rare-Earth Nanomaterials and Devices)
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12 pages, 5526 KiB  
Article
In-Plane Strain Tuned Electronic and Optical Properties in Germanene-MoSSe Heterostructures
by Qing Pang, Hong Xin, Ruipeng Chai, Dangli Gao, Jin Zhao, You Xie and Yuling Song
Nanomaterials 2022, 12(19), 3498; https://doi.org/10.3390/nano12193498 - 6 Oct 2022
Cited by 14 | Viewed by 2135
Abstract
DFT calculations are performed to investigate the electronic and optical absorption properties of two-dimensional heterostructures constructed by Janus MoSSe and germanene. It is found that a tiny gap can be opened up at the Dirac point in both Ge/SMoSe and Ge/SeMoS heterostructures, with [...] Read more.
DFT calculations are performed to investigate the electronic and optical absorption properties of two-dimensional heterostructures constructed by Janus MoSSe and germanene. It is found that a tiny gap can be opened up at the Dirac point in both Ge/SMoSe and Ge/SeMoS heterostructures, with intrinsic high-speed carrier mobility of the germanene layer being well preserved. An n-type Schottky contact is formed in Ge/SMoSe, while a p-type one is formed in Ge/SeMoS. Compared to corresponding individual layers, germanene-MoSSe heterostructures can exhibit extended optical absorption ability, ranging from ultraviolet to infrared light regions. The position of the Dirac cone, the Dirac gap value as well as the position of the optical absorption peak for both Ge/SMoSe and Ge/SeMoS heterostructures can be tuned by in-plane biaxial strains. It is also predicted that a Schottky–Ohmic transition can occur when suitable in-plane strain is imposed (especially tensile strain) on heterostructures. These results can provide a helpful guide for designing future nanoscale optoelectronic devices based on germanene-MoSSe vdW heterostructures. Full article
(This article belongs to the Special Issue Luminescent Rare-Earth Nanomaterials and Devices)
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9 pages, 4038 KiB  
Article
Influence of NaYF4 Inert and Active Layer on Upconversion Luminescence
by Zhaojin Wang, Shebao Lin, Yajun Liu, Jin Hou, Xinyi Xu, Xin Zhao and Biying Wei
Nanomaterials 2022, 12(19), 3288; https://doi.org/10.3390/nano12193288 - 21 Sep 2022
Cited by 8 | Viewed by 1969
Abstract
NaYF4:Yb,Er@NaYF4 core–shell nanostructures were prepared to investigate their influence on upconversion (UC) luminescence. Tests revealed green radiation (4S3/2→4I15/2) and red radiation (4F9/2→4I15/2) first increased [...] Read more.
NaYF4:Yb,Er@NaYF4 core–shell nanostructures were prepared to investigate their influence on upconversion (UC) luminescence. Tests revealed green radiation (4S3/2→4I15/2) and red radiation (4F9/2→4I15/2) first increased and then gradually decreased as Yb concentration increased in the NaYF4 shell. The strongest fluorescent radiation occurred at an Yb concentration of 5%. To investigate the complicated variation of luminescence, we designed a set of experiments to study the impact of Yb ion concentration on luminescence intensity, and we analyzed the corresponding enhancement mechanism. It is probable that the energy transfers between both Yb and Er ions and Yb and Yb ions are involved in the UC processes. The enhancement of hybrid nanostructures has huge potential in biological detection and solar cells. Full article
(This article belongs to the Special Issue Luminescent Rare-Earth Nanomaterials and Devices)
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