III-Nitride Nanomaterials and Devices
A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanophotonics Materials and Devices".
Deadline for manuscript submissions: 25 February 2026 | Viewed by 1744
Special Issue Editor
Interests: topological insulators; topological phase transition; theory of semiconductor nanostructures; k∙p method; ab-initio calculations
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
Group-III nitride nanostructures, such as GaN/AlGaN and InGaN/GaN quantum wells, quantum wires, and quantum dots, have become one of the most important semiconductor nanomaterials since the discovery of GaN-based light-emitting diodes and laser diodes in the 1990s. Due to the large differences between the direct band gaps of InN, GaN, and AlN, they can emit light in a very wide spectral region from the far infrared to the deep ultraviolet. Currently, InGaN/GaN and GaN/AlGaN quantum wells operating in the blue and near-ultraviolet spectral region are widely used in the active regions of commercial light emitters. However, for nitride quantum wells emitting light from the infrared to green spectral region and in the deep ultraviolet, the efficiency of emission is usually poor due to a number of physical and technological problems, such as large strains, strong built-in electric fields, localization of carriers due to alloy fluctuations, generation of a large number of point defects, low p-type doping efficiency. These problems can be overcome by using nitride quantum wires or quantum dots, which offer several advantages over planar quantum well structures, including a large surface-to-volume ratio and additional quantum confinement of carriers, leading to better structural, electrical and optical properties of these nanostructures. Moreover, nitride quantum wires and quantum dots are very promising nanomaterials for a new generation of optoelectronic devices, such as single photon emitters and nano-light-emitting diodes and ultra-small lasers.
This Special Issue focuses on the most recent advances in group-III nitride nanomaterials and devices. The potential topics of this Special Issue include the epitaxial growth of nitride nanomaterials, theoretical modelling and numerical simulations of nitride nanostructures and devices, structural, electrical and optical properties of nitride nanomaterials, nano-light-emitting diodes and ultra-small lasers, and III-nitride single photon emitters.
Prof. Dr. Sławomir P. Łepkowski
Guest Editor
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Keywords
- III-nitride quantum wells
- III-nitride quantum wires
- III-nitride quantum dots
- III-nitride nanomaterials
- epitaxial growth
- strain-related effects
- electrical and optical properties
- nano-light-emitting diodes
- ultra-small lasers
- single photon emitters
- theoretical modelling and numerical simulations
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