Next-Generation Metal Halides: Luminescence, Stability, and Device Applications
A special issue of Molecules (ISSN 1420-3049). This special issue belongs to the section "Photochemistry".
Deadline for manuscript submissions: 31 August 2026
Special Issue Editor
Interests: material characterization; materials; materials processing; advanced materials; materials testing; radiation; radiation detection; metals; Monte Carlo simulation; solid state physics
Special Issue Information
Dear Colleagues,
Next-generation metal halides have rapidly evolved from laboratory curiosities into a major materials platform for modern optoelectronics and photonics. Their extraordinary tunability of electronic structure, strong light–matter interactions, and rich defect physics produce a wide range of luminescent behaviors—from narrowband excitonic emission to broad, high-efficiency self-trapped exciton (STE) luminescence. These properties make metal halides attractive for light-emitting diodes, lasers, scintillators, photodetectors, and other photonic technologies. Despite impressive progress, important challenges remain, limiting device lifetimes, performance reproducibility, and the transition of promising lead-free chemistries to applications.
Recent advances—such as compositional and dimensional engineering (0D–3D and quasi-2D architectures), innovative surface and bulk passivation strategies, and improved understanding of defect- and phonon-coupled emission mechanisms—have expanded the toolbox available to researchers. These developments have enabled record-level photoluminescence efficiencies, demonstration of stable LEDs and lasers under laboratory conditions, and new non-toxic material classes. Nevertheless, persistent issues related to material and interface stability under operating conditions still impede widespread technological deployment in real-world devices and large-scale manufacturing.
This Special Issue invites high-quality original research articles and incisive reviews that highlight the latest scientific advances and future directions in next-generation metal halides. Topics of interest include, but are not limited to, the following:
- fundamental luminescence mechanisms and their control (excitons, STEs, defect-mediated emission);
- strategies for improving chemical, thermal, and operational stability (passivation, encapsulation, compositional engineering);
- synthesis, processing and scalable fabrication methods (solution processing, vapor deposition, green/low-toxicity routes);
- dimensionality and compositional engineering (2D/quasi-2D, double perovskites, lead-free alternatives, alloying);
- advanced spectroscopic and microscopic characterization of excited-state dynamics and defect landscapes;
- theoretical and computational studies that connect structure, defects, and optical properties;
- device demonstrations and integration (LEDs, lasers, photodetectors, scintillators, integrated photonics, flexible/wearable platforms);
- ion migration, degradation mechanisms, and mitigation strategies under operational conditions;
- environmental, toxicity, and recyclability assessments and strategies for minimizing lead content.
By assembling interdisciplinary contributions spanning synthesis, characterization, theory, and device implementation, this collection aims to clarify the structure–property–stability relationships that will guide rational materials design and device engineering. We especially welcome manuscripts that address scalability, reproducibility, and long-term operation, in addition to studies that bridge the gap between fundamental photophysics and application-driven device metrics. Submissions may include original research articles, perspectives, and comprehensive reviews.
Prof. Dr. Rastgo Hawrami
Guest Editor
Manuscript Submission Information
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Keywords
- metal halide perovskites
- lead-free metal halides
- photoluminescence
- self-trapped excitons (STEs)
- stability engineering
- passivation strategies
- light-emitting diodes (LEDs)
- photodetectors
- dimensionality engineering
- ion migration
- defect physics
- scalable synthesis and device integration
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