Reliability and Degradation in Power Transistors
A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".
Deadline for manuscript submissions: 31 December 2026 | Viewed by 416
Editors
Interests: physics of semiconductor devices; failure physics; failure analysis; power VDMOS transistors; bias-temperature instabilities; irradiation; degradation mechanisms
Special Issue Information
Dear Colleagues,
Power transistors are core components in modern power electronic systems, widely used in critical fields such as electric vehicles, renewable energy conversion, industrial automation, and consumer electronics. In addition, they can be used in electronic systems operating in harsh environments. With the advancement of technologies toward higher power densities, faster switching speeds, and the widespread adoption of wide-bandgap semiconductors like silicon carbide (SiC) and gallium nitride (GaN), ensuring long-term reliability under increasingly demanding multi-stress operating conditions has become a major challenge.
This Special Issue focuses on degradation and failure mechanisms in power transistors, exploring the complex interplay of electrical, thermal, mechanical, and environmental stresses and their impact on device lifespan. We invite original research and review articles covering topics such as an in-depth understanding of failure physics, accurate lifetime prediction models (particularly those accounting for competing or sequential degradation mechanisms), and novel experimental, simulation, or data-driven approaches for reliability assessment. Contributions addressing condition monitoring, prognostic health management, design-for-reliability strategies, and the influence of emerging materials and device architectures are also highly encouraged.
By bridging fundamental degradation science with practical reliability engineering, this Special Issue aims to advance the development of more robust, predictable, and durable next-generation power electronic systems for future energy and mobility applications.
Prof. Dr. Snezana Djoric-Veljkovic
Prof. Dr. Danijel Dankovic
Guest Editors
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Keywords
- high-k dielectrics
- degradation mechanisms in solid oxide cells (SOC)
- radiation hardness
- reliability of electronic devices
- power VDMOS transistors
- lifetime estimation
- failure mechanisms of electronic power devices
- bias-temperature instabilities
- power transistors
- failure analysis
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