Wide-Bandgap Semiconductors: From Materials to Radiation Detectors
A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D：Materials and Processing".
Deadline for manuscript submissions: 28 February 2026 | Viewed by 40
Special Issue Editor
Interests: preparation of wide bandgap semiconductor materials and their applications in nuclear detection and protection; multifunctional nanosensor materials and intelligent sensing systems; interface carrier transport studies
Special Issue Information
Dear Colleagues,
Wide-bandgap (WBG) semiconductors have emerged as a critical class of materials for next-generation electronic and optoelectronic applications, particularly in extreme environments such as high temperature, high voltage, and high radiation fields. Compared to conventional silicon-based semiconductors, WBG materials such as GaN, SiC, and hexagonal boron nitride (h-BN) offer superior properties, including higher breakdown voltage, wider bandgap energy, faster switching speeds, and stronger resistance to radiation-induced degradation. These features make them highly attractive for advanced radiation detectors, power electronics, and aerospace systems.
This Special Issue of Micromachines, titled “Wide-Bandgap Semiconductors: From Materials to Radiation Detectors”, aims to showcase recent progress in the synthesis, processing, device integration, and characterization of WBG semiconductors, as well as their application in radiation detection technologies. The scope includes fundamental material research, interface engineering, device modeling, and real-world implementations in neutron, X-ray, and beta particle detection.
Topics of interest include, but are not limited to the following:
- Growth and fabrication techniques for high-quality WBG semiconductors (e.g., GaN, SiC, h-BN, AlN);
- Material characterization and defect analysis related to radiation hardness and stability;
- Novel device structures for alpha, beta, gamma, or neutron detection;
- Integration of WBG semiconductors with advanced readout circuits and signal processing units;
- Interface and contact engineering for improved charge transport and sensitivity;
- Simulation and modeling of carrier dynamics in WBG-based radiation detectors.
This Special Issue invites contributions from researchers in materials science, solid-state physics, device engineering, and radiation sensing to present original research articles and reviews that bridge the gap between fundamental materials development and practical detector technologies.
Dr. Lu Zhang
Guest Editor
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Keywords
- wide-bandgap semiconductors
- radiation detectors
- high-temperature electronics
- radiation hardness
- material synthesis
- charge transport
- interface engineering
- device modeling
- defect characterization
- harsh environment electronics
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