Crystal Growth and Characterization of Electronic and Optoelectronic Materials
A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".
Deadline for manuscript submissions: closed (31 July 2021) | Viewed by 3108
Special Issue Editor
Special Issue Information
Dear Colleagues,
The aim of this Special Issue, devoted to the topic "Crystal Growth and Characterization of Electronic and Optoelectronic Materials" is to address current challenges and developments in the field of crystal growth for electronic and optoelectronic applications engaging the inherent technological benefits of growth materials. For this issue, we invite research contributions reporting advances on topics such as bulk crystals and substrate technologies, epitaxy, defect and doping, interface and surface analysis, structural characterization, and study of relevant properties (including morphological, physical, optical, electric, etc.) of growth materials (bulk, thin films, and nanostructure). The applications from the crystals cover various devices, e.g., power device, RF device, light-emitting diodes (LEDs), lasers, photodetectors, photovoltaic cells, transistors or others relevant devices suitable for electronics and optoelectronics.
Considering your outstanding contribution in this fascinating research field, I would like to cordially invite you to submit a paper to this Special Issue.
Dr. Si-Young Bae
Guest Editor
Manuscript Submission Information
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Keywords
- crystal growth
- epitaxy
- characterization
- electronics
- optoelectronics
- wide bandgap semiconductors
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