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Advances in Atomic Layer Deposition Process, Applications and Modeling

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Thin Films and Interfaces".

Deadline for manuscript submissions: 20 April 2026 | Viewed by 312

Special Issue Editor


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Guest Editor
Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
Interests: atomic layer deposition; lithium ion batteries; In situ Electron microscopy

Special Issue Information

Dear Colleagues,

Atomic Layer Deposition (ALD), with its precise control over the deposition of thin, conformal films at the atomic scale, is widely used for surface and interface modification, as well as for enhancing oxidation resistance in metals and functional materials. This Special Issue will explore the diverse applications of ALD, particularly in the enhancement in lithium (Li) and sodium (Na)-ion batteries, as well as solid-state batteries. Additionally, it will investigate various ALD film deposition processes and their influence on material properties and performance. Furthermore, the Special Issue will examine the failure mechanisms of materials before and after ALD modification, in conjunction with electron microscopy characterization. Advanced modeling approaches will also be discussed, offering a holistic understanding of how ALD can be optimized for next-generation energy storage technologies. This Special Issue is designed to provide a comprehensive overview of the latest advancements in ALD, focusing on its potential to revolutionize various fields.

Dr. Xiaopeng Cheng
Guest Editor

Manuscript Submission Information

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Keywords

  • atomic layer deposition
  • functional materials
  • metals
  • next-generation batteries
  • electron microscopy characterization

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Published Papers (1 paper)

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Research

18 pages, 9410 KB  
Article
Impact of Purge Regime and Reactor Volume on ALD ZnO and ZrO2 Growth: From Structural Properties to Applications
by Lukasz Wachnicki and Sylwia Gieraltowska
Materials 2026, 19(8), 1556; https://doi.org/10.3390/ma19081556 - 13 Apr 2026
Abstract
ALD is a precise thin-film deposition technique based on self-limiting surface reactions. A crucial stage in each ALD cycle is the purge step, which removes excess precursor molecules and reaction by-products from the reactor chamber, preventing uncontrolled gas-phase reactions that could degrade film [...] Read more.
ALD is a precise thin-film deposition technique based on self-limiting surface reactions. A crucial stage in each ALD cycle is the purge step, which removes excess precursor molecules and reaction by-products from the reactor chamber, preventing uncontrolled gas-phase reactions that could degrade film quality. Despite its fundamental importance, the impact of purge dynamics on film growth and structure remains insufficiently explored. ZnO and ZrO2 films were deposited in reactors with different effective chamber volumes (47 and 470 cm3), enabling a systematic study of gas residence time effects. Our results demonstrate that the purge mode—dynamic versus static vacuum—strongly affects the growth behavior, crystallinity, and surface morphology of ALD oxides. Dynamic purging leads to smoother, more uniform, and better-crystallized films, whereas static exposure results in lower structural and morphological quality, particularly for ZrO2. Importantly, these results demonstrate that purge-mode engineering provides a powerful and cost-effective route for tailoring oxide film structure without altering the precursor chemistry or deposition temperature. To validate the practical integration of these optimized films, functional phosphor and LED structures were fabricated, confirming that the controlled microstructure is well-suited for optoelectronic applications. This approach also offers new possibilities for controlling film properties in sensors and catalysts. Full article
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