Special Issue "Wide-Bandgap Materials and Applications"

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: 31 December 2020.

Special Issue Editors

Dr. Carlo De Santi
Website
Guest Editor
Department of Information Engineering, University of Padova, Via Gradenigo 6/B I-35131 Padova, Italy
Interests: device characterization; device modeling; device reliability; electronics; optoelectronics; wide-bandgap semiconductors
Prof. Dr. Matteo Meneghini
Website
Guest Editor
Department of Information Engineering, University of Padova, Via Gradenigo 6/B I-35131 Padova, Italy
Interests: LEDs, laser diodes, reliability, degradation, defects, characterization, HEMT, gallium nitride, GaN, GaO, GaAs, solar cells, photodetectors

Special Issue Information

Dear Colleagues,

Wide-bandgap semiconductors are rapidly emerging as disruptive materials for a wide range of applications. Even though some products are already available in the market, efforts are still needed to improve the performance and reliability of the devices as well as to identify novel materials and structures toward widening the possible application fields.
In order to showcase the most recent advancements, we are requesting submissions for a Special Issue on wide-bandgap materials and their applications. Topics of interest for this Special Issue include, but are not limited to:
• Wide-bandgap elemental and compound semiconductors: gallium nitride, silicon carbide, gallium oxide, aluminum nitride, boron nitride, diamond, to name but a few examples;
• Materials and devices for power electronics, RF applications, and optoelectronics, including extreme environments such as space applications;
• The full range of the fabrication process, from substrate, growth, and processing to electrical, optical, and defect characterization, as well as reliability and packaging;
• Device integration and novel device structures;
• Tutorials, reviews, and perspectives.

Dr. Carlo De Santi
Prof. Matteo Meneghini
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2000 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • wide-bandgap semiconductors
  • power electronics
  • RF electronics
  • optoelectronics
  • computer-assisted simulation

Published Papers (1 paper)

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Research

Open AccessArticle
Carbon-Based Band Gap Engineering in the h-BN Analytical Modeling
Materials 2020, 13(5), 1026; https://doi.org/10.3390/ma13051026 - 25 Feb 2020
Abstract
The absence of a band gap in graphene is a hindrance to its application in electronic devices. Alternately, the complete replacement of carbon atoms with B and N atoms in graphene structures led to the formation of hexagonal boron nitride (h-BN) and caused [...] Read more.
The absence of a band gap in graphene is a hindrance to its application in electronic devices. Alternately, the complete replacement of carbon atoms with B and N atoms in graphene structures led to the formation of hexagonal boron nitride (h-BN) and caused the opening of its gap. Now, an exciting possibility is a partial substitution of C atoms with B and N atoms in the graphene structure, which caused the formation of a boron nitride composite with specified stoichiometry. BC2N nanotubes are more stable than other triple compounds due to the existence of a maximum number of B–N and C–C bonds. This paper focused on the nearest neighbor’s tight-binding method to explore the dispersion relation of BC2N, which has no chemical bond between its carbon atoms. More specifically, the band dispersion of this specific structure and the effects of energy hopping in boron–carbon and nitrogen–carbon atoms on the band gap are studied. Besides, the band structure is achieved from density functional theory (DFT) using the generalized gradient approximations (GGA) approximation method. This calculation shows that this specific structure is semimetal, and the band gap energy is 0.167 ev. Full article
(This article belongs to the Special Issue Wide-Bandgap Materials and Applications)
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