Polar Semiconductors: Effects of Polarity on Crystal Growth and Electronic Devices
A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".
Deadline for manuscript submissions: closed (31 December 2021) | Viewed by 1857
Special Issue Editor
Interests: semiconductor material physics; surface science; wide bandgap semiconductors; polar semiconductors; ZnO; GaN; nanowire growth; semiconductor electronic devices; optical spectroscopies
Special Issue Information
Dear Colleagues,
Awareness of the special physics of polar semiconductors is ever-increasing, along with their use as electronic materials. Nonetheless, it is still quite low compared to that of well-studied, non-polar semiconductors. This is, in part, due to their absence in core-curriculum courses of electrical engineering and materials science. As a result, many crystal growth and device phenomena in polar semiconductors are often misinterpreted. At the same time, growing awareness to the effects of polarity leads to novel applications in new electronic devices. The aim of the forthcoming “Polar Semiconductors: Effects of Polarity on Crystal Growth and Electronic Devices” Special Issue is to present an up-to-date multidisciplinary overview of materials, structures (layered or nanostructures), and device aspects of polarity effects. The purpose of this issue is to gather studies and reviews on effects of polarity on crystal growth and electronic devices in polar semiconductors and their applications. Research articles, review articles, and communications relating to theory, simulation, processes, properties, and applications of polarity effects in polar semiconductors are all invited to this Special Issue.
Dr. Ilan Shalish
Guest Editor
Manuscript Submission Information
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Keywords
- polarity
- polar semiconductors
- piezoelectricity
- pyroelectricity
- spontaneous polarization
- crystal growth
- heterostructure
- nanostructures
- wurtzite
- polar charge
- polar built-in field