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Synthesis and Advanced Characterization of Low-Dimensional and Quantum Materials

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Advanced Materials Characterization".

Deadline for manuscript submissions: closed (20 February 2022) | Viewed by 11626

Special Issue Editors


E-Mail Website
Guest Editor
IMM-CNR Agrate Unit, 95121 Catania, Italy
Interests: two-dimensional materials; Xenes; electronics; photonics

E-Mail Website
Guest Editor
IMM-CNR Agrate Unit, 95121 Catania, Italy
Interests: two-dimensional materials; Xenes; transition metal dichalcogenides; light-matter interaction, electronics

Special Issue Information

Dear Colleagues,

Reducing dimensionality in matter to an atomic-scale opens the door to physical and chemical properties inaccessible in its bulk counterpart.

From 2-dimensional to 0-dimensional materials, novel and unexpected behaviors are observed in the electronic band structures, thermal and electronic transport, light–matter interaction, chemical reactivity, and mechanical stiffness, as well as quantum mechanical effects related to spatial confinement and nontrivial topological state of the matter.

An interesting aspect is that all these properties are widely tunable by playing with the size, thickness, doping, strain, external fields, and environmental frameworks.

Nevertheless, the path towards the full comprehension and exploitation of low-dimensional and quantum materials in technological applications is punctuated by countless challenges. Significant issues at stake include the development of synthesis and processing approaches, in the top-down and bottom-up configurations, able to provide extreme reliability, versatility, and control of the fundamental properties down to the nanoscale. Similarly, the ongoing development of investigation techniques and theoretical modeling suitable for the advanced characterization of the systems is becoming an urgent task.

In this Special Issue, the experimental and theoretical state-of-the-art approaches for the synthesis and advanced characterization of low-dimensional and quantum materials are highlighted and discussed aiming to improve the knowledge of the most important topics about condensed matter.

It is our pleasure to invite you to submit a manuscript for this Special Issue. Full papers, communications, and reviews are all welcome.

Dr. Carlo Grazianetti
Dr. Christian Martella
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Low-dimensional materials
  • Quantum materials
  • Topological materials
  • Synthesis and self-assembly
  • 2D materials
  • Thin films and nanosheets
  • Dirac and Weyl semimetals
  • Quantum confinement
  • Materials engineering

Published Papers (4 papers)

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Research

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11 pages, 4459 KiB  
Article
Graphene Growth on Electroformed Copper Substrates by Atmospheric Pressure CVD
by Lorenzo Pedrazzetti, Eugenio Gibertini, Fabio Bizzoni, Valeria Russo, Andrea Lucotti, Luca Nobili and Luca Magagnin
Materials 2022, 15(4), 1572; https://doi.org/10.3390/ma15041572 - 19 Feb 2022
Cited by 4 | Viewed by 1694
Abstract
Chemical vapor deposition (CVD) is regarded as the most promising technique for the mass production of graphene. CVD synthesis under vacuum is the most employed process, because the slower kinetics give better control on the graphene quality, but the requirement for high-vacuum equipment [...] Read more.
Chemical vapor deposition (CVD) is regarded as the most promising technique for the mass production of graphene. CVD synthesis under vacuum is the most employed process, because the slower kinetics give better control on the graphene quality, but the requirement for high-vacuum equipment heavily affects the overall energy cost. In this work, we explore the possibility of using electroformed Cu substrate as a catalyst for atmospheric-pressure graphene growth. Electrochemical processes can produce high purity, freestanding metallic films, avoiding the surface defects that characterize the rolled foils. It was found that the growth mode of graphene on the electroformed catalyst was related to the surface morphology, which, in turn, was affected by the preliminary treatment of the substrate material. Suitable conditions for growing single layer graphene were identified. Full article
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12 pages, 1534 KiB  
Article
Anisotropic Complex Refractive Indices of Atomically Thin Materials: Determination of the Optical Constants of Few-Layer Black Phosphorus
by Aaron M. Ross, Giuseppe M. Paternò, Stefano Dal Conte, Francesco Scotognella and Eugenio Cinquanta
Materials 2020, 13(24), 5736; https://doi.org/10.3390/ma13245736 - 16 Dec 2020
Cited by 8 | Viewed by 2927
Abstract
In this work, studies of the optical constants of monolayer transition metal dichalcogenides and few-layer black phosphorus are briefly reviewed, with particular emphasis on the complex dielectric function and refractive index. Specifically, an estimate of the complex index of refraction of phosphorene and [...] Read more.
In this work, studies of the optical constants of monolayer transition metal dichalcogenides and few-layer black phosphorus are briefly reviewed, with particular emphasis on the complex dielectric function and refractive index. Specifically, an estimate of the complex index of refraction of phosphorene and few-layer black phosphorus is given. The complex index of refraction of this material was extracted from differential reflectance data reported in the literature by employing a constrained Kramers–Kronig analysis combined with the transfer matrix method. The reflectance contrast of 1–3 layers of black phosphorus on a silicon dioxide/silicon substrate was then calculated using the extracted complex indices of refraction. Full article
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13 pages, 4173 KiB  
Article
Application-Oriented Growth of a Molybdenum Disulfide (MoS2) Single Layer by Means of Parametrically Optimized Chemical Vapor Deposition
by Pinakapani Tummala, Alessio Lamperti, Mario Alia, Erika Kozma, Luca Giampaolo Nobili and Alessandro Molle
Materials 2020, 13(12), 2786; https://doi.org/10.3390/ma13122786 - 20 Jun 2020
Cited by 18 | Viewed by 3673
Abstract
In the 2D material framework, molybdenum disulfide (MoS2) was originally studied as an archetypical transition metal dichalcogenide (TMD) material. The controlled synthesis of large-area and high-crystalline MoS2 remains a challenge for distinct practical applications from electronics to electrocatalysis. Among the [...] Read more.
In the 2D material framework, molybdenum disulfide (MoS2) was originally studied as an archetypical transition metal dichalcogenide (TMD) material. The controlled synthesis of large-area and high-crystalline MoS2 remains a challenge for distinct practical applications from electronics to electrocatalysis. Among the proposed methods, chemical vapor deposition (CVD) is a promising way for synthesizing high-quality MoS2 from isolated domains to a continuous film because of its high flexibility. Herein, we report on a systematic study of the effects of growth pressure, temperature, time, and vertical height between the molybdenum trioxide (MoO3) source and the substrate during the CVD process that influence the morphology, domain size, and uniformity of thickness with controlled parameters over a large scale. The substrate was pretreated with perylene-3,4,9,10-tetracarboxylic acid tetrapotassium salt (PTAS) seed molecule that promoted the layer growth of MoS2. Further, we characterized the as-grown MoS2 morphologies, layer quality, and physical properties by employing scanning electron microscopy (SEM), Raman spectroscopy, and photoluminescence (PL). Our experimental findings demonstrate the effectiveness and versatility of the CVD approach to synthesize MoS2 for various target applications. Full article
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Review

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13 pages, 1697 KiB  
Review
The Rise of the Xenes: From the Synthesis to the Integration Processes for Electronics and Photonics
by Carlo Grazianetti and Christian Martella
Materials 2021, 14(15), 4170; https://doi.org/10.3390/ma14154170 - 27 Jul 2021
Cited by 12 | Viewed by 2617
Abstract
The recent outcomes related to the Xenes, the two-dimensional (2D) monoelemental graphene-like materials, in three interdisciplinary fields such as electronics, photonics and processing are here reviewed by focusing on peculiar growth and device integration aspects. In contrast with forerunner 2D materials such as [...] Read more.
The recent outcomes related to the Xenes, the two-dimensional (2D) monoelemental graphene-like materials, in three interdisciplinary fields such as electronics, photonics and processing are here reviewed by focusing on peculiar growth and device integration aspects. In contrast with forerunner 2D materials such as graphene and transition metal dichalcogenides, the Xenes pose new and intriguing challenges for their synthesis and exploitation because of their artificial nature and stabilization issues. This effort is however rewarded by a fascinating and versatile scenario where the manipulation of the matter properties at the atomic scale paves the way to potential applications never reported to date. The current state-of-the-art about electronic integration of the Xenes, their optical and photonics properties, and the developed processing methodologies are summarized, whereas future challenges and critical aspects are tentatively outlined. Full article
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