Growth and Characterization of Bulk Crystals

Dear Colleagues,

Electronic and optical devices are key elements for the modern information society.

It is well known that these devices are almost all based on single crystals of semiconductors and oxides.

Looking into history, we can see that progress in crystal growth techniques makes tremendous developments in the field of microelectronics, information technology, power electronics, photovoltaics, optics, optoelectronics and scintillator materials. Many growth methods are available to produce these semiconductor and oxide crystals. Techniques include Czochralski, flux growth, floating zone, Stepanov, edge-defined film-fed growth (EFG), vertical gradient freeze (VGF), Bridgman–Stockbarger, Verneuil, unidirectional solidification, and hydrothermal growth methods, to name a few.

At present, the increase of high-quality crystal yield and its size enlargement are imperative demands from the industry. In order to fulfill the industry requirements, researchers are expected to give insights into crystal growth mechanisms in order to understand crystalline perfection, composition, strain, and defects that are introduced during growth and processing. On one side, characterization methods like X-ray and electron diffraction, optical spectroscopy, mass spectroscopy, and electric and magnetic measurements provide this insight, and they have become important tools in the study of bulk crystal growth and materials properties.

On the other side, in recent decades, computer modeling has become an essential tool for optimization of growth design and automation process.

We kindly invite you to submit a manuscript(s) for this Special Issue. Full papers, communications, and reviews in the field of bulk crystal growth—growth techniques, characterization, and computer models—are all welcome.

Prof. Dr. Daniel Vizman
Guest Editor

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