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High-Performance Materials for Thin-Film Transistors and Other Electronic Device Applications

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: 20 September 2024 | Viewed by 1114

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Guest Editor
Department of Information Display, Kyung Hee University, Seoul, Republic of Korea
Interests: thin film transistors; high-k dielectrics; solution process; oxide materials
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Special Issue Information

Dear Colleagues,

In the last 40 years, thin-film transistors (TFTs) have come a long way from potential electronic devices to being used in our smartphones. Advancements in TFTs have been achieved through technological improvements in the research and development of materials, processes, and devices.

From a materials perspective, semiconductors have been the main focus. Amorphous and polycrystalline materials have been investigated, from amorphous silicon and polysilicon to organic materials, oxide semiconductors, CNTs, and the recent development of perovskite and 2D materials. For dielectrics, SiO2 has been the main choice, but high-k dielectrics have also been considered. Ferroelectric dielectrics have also opened the way to other advanced applications. The materials used as the substrate have also changed with time, as nowadays flexible or even stretchable substrates are commonly investigated. In terms of processes, vacuum processes like sputtering and plasma-enhanced chemical vapor deposition (PECVD) have mostly been used for practical industrial applications. Nonetheless, non-vacuum processes, including but not limited to inkjet printing, spin-coating, spray coating, and roll-to-roll, have led to the possibility of devices with reproducible and high-mobility characteristics. In terms of devices, conventional TFT structures (staggered, inverted staggered, coplanar, and inverted coplanar) and other structures (like the Corbino TFT, dual gate, etc.) have been widely investigated to obtain devices with higher stability and higher mobility. More recently, hybrid solutions, like LTPO inverters, have been investigated for CMOS applications, and the development of technology computer-aided design (TCAD) has allowed us to better understand and strategize the development of circuits for larger electronics like active matrix organic light-emitting diodes (AMOLED). Finally, TFTs can also be used in bioelectronics or even in biomimicking (e.g., synaptic) devices.

In this paper, we invite the submission of manuscripts related to the most recent and newest approaches to TFT materials, processes, and devices that could reflect tomorrow’s applications. Full papers, communications, and reviews are welcome.

Dr. Christophe Avis
Guest Editor

Manuscript Submission Information

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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • thin-film transistor
  • vacuum process
  • solution process
  • flexible and stretchable substrates
  • oxide semiconductors
  • 2D materials
  • perovskite
  • organic semiconductors
  • LTPO
  • bioelectronics

Published Papers (1 paper)

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Research

14 pages, 2807 KiB  
Article
Influence of NF3 Plasma-Treated HfO2 Gate Insulator Surface on Tin Oxide Thin-Film Transistors
by Christophe Avis and Jin Jang
Materials 2023, 16(22), 7172; https://doi.org/10.3390/ma16227172 - 15 Nov 2023
Viewed by 893
Abstract
We studied the impact of NF3 plasma treatment on the HfO2 gate insulator of amorphous tin oxide (a-SnOx) thin-film transistors (TFTs). The plasma treatment was for 0, 10, or 30 s. The HfO2 insulator demonstrated a slightly higher [...] Read more.
We studied the impact of NF3 plasma treatment on the HfO2 gate insulator of amorphous tin oxide (a-SnOx) thin-film transistors (TFTs). The plasma treatment was for 0, 10, or 30 s. The HfO2 insulator demonstrated a slightly higher breakdown voltage, whereas the capacitance value remained almost constant (~150 nF/cm2). The linear mobility slightly increased from ~30 to ~35 cm2/Vs when the treatment time increased from 0 to 10 s, whereas a 30 s-treated TFT demonstrated a decreased mobility of ~15 cm2/Vs. The subthreshold swing and the threshold voltage remained in the 100–120 mV/dec. range and near 0 V, respectively. The hysteresis dramatically decreased from ~0.5 V to 0 V when a 10 s treatment was applied, and the 10 s-treated TFT demonstrated the best stability under high current stress (HCS) of 100 μA. The analysis of the tin oxide thin film crystallinity and oxygen environment demonstrated that the a-SnOx remained amorphous, whereas more metal–oxygen bonds were formed with a 10 s NF3 plasma treatment. We also demonstrate that the density of states (DOS) significantly decreased in the 10 s-treated TFT compared to the other conditions. The stability under HCS was attributed to the HfO2/a-SnOx interface quality. Full article
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