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Special Edition on Semiconductor Materials and Optics
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Special Edition on Semiconductor Materials and Optics

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Quantum Materials".

Deadline for manuscript submissions: closed (10 November 2023) | Viewed by 3626

Special Issue Editors

Prof. Dr. Mauro Fernandes Pereira

E-Mail Website
Guest Editor
Physics Department, Khalifa University of Science and Technology, Abu Dhabi, United Arab Emirates
Interests: semiconductor materials and optics; gigahertz, terahertz, and mid-infrared radiation (GIGA-TERA-MIR); (NIR-IR); quantum cascade lasers; dilute semiconductors; nitride, bismide and antimonide-based lasers; methods, materials, and devices for sensitive gas detection, water quality control, and metabolomics; GHz-THz frequency multiplication and controllable GHz-THz nonlinearities in semiconductor superlattices; THz metamaterials, nanoparticles for medical physics applications; sensors for CBRN detection and water quality monitoring
Special Issues, Collections and Topics in MDPI journals
Dr. Apostolos Apostolakis

E-Mail Website
Guest Editor
Institute of Physics of the Czech Academy of Sciences, Prague, Czech Republic
Interests: theory and simulations in condensed matter physics; nonlinear dynamics; THz physics; mid-infrared radiation; high harmonic generation in condensed matter; semiconductor heterostructures; physical acoustics; acoustoelectronics; opto-electronic devices; sensors for CBRN detection and water quality monitoring

Special Issue Information

Dear Colleagues,

Recent advances in optics have had a large societal impact through new devices and applications, and have promoted a deeper understanding of the intrinsically quantum nature of matter and radiation, in the wake of highly controlled experiments.

The main focus of this Special Issue will thus cover semiconductor materials and optics. Both fundamental physics and applications will be covered. Original research articles and reviews are welcome. Research areas may include (but not limited to) the following:

  1. Optoelectronic and kinetic properties of semiconductor materials;
  2. High harmonic generation in semiconductor crystals and artificial nanostructures;
  3. Negative differential conductivity (NDC) and electrical domain instabilities in GaAs, GaN and other semiconductor crystals;
  4. Bloch oscillations in superlattices, quantum cascade lasers, and other semiconductor crystals;
  5. Semiconductor quantum dots;
  6. MIR-THz OCLs and other semiconductor nanocrystals applied to explosives detection;
  7. Semiconductor-based gas sensors.

Prof. Dr. Mauro Fernandes Pereira
Dr. Apostolos Apostolakis
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • nonlinear optics
  • metamaterials
  • quantum cascade lasers
  • quantum cascade detectors
  • semiconductor superlattice multipliers
  • semiconductor materials and optics
  • sensitive gas detection
  • high harmonic generation
  • negative differential resistance
  • water quality control
  • metabolomics
  • sensors for CBRN
  • waveguides
  • novel photonic functionalities
  • optical computing
  • laser materials

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Further information on MDPI's Special Issue policies can be found here.

Published Papers (2 papers)

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Research

16 pages, 4129 KiB  
Article
Resonant Tunnelling and Intersubband Optical Properties of ZnO/ZnMgO Semiconductor Heterostructures: Impact of Doping and Layer Structure Variation
by Aleksandar Atić, Xizhe Wang, Nikola Vuković, Novak Stanojević, Aleksandar Demić, Dragan Indjin and Jelena Radovanović
Materials 2024, 17(4), 927; https://doi.org/10.3390/ma17040927 - 17 Feb 2024
Cited by 1 | Viewed by 1544
Abstract
ZnO-based heterostructures are up-and-coming candidates for terahertz (THz) optoelectronic devices, largely owing to their innate material attributes. The significant ZnO LO-phonon energy plays a pivotal role in mitigating thermally induced LO-phonon scattering, potentially significantly elevating the temperature performance of quantum cascade lasers (QCLs). [...] Read more.
ZnO-based heterostructures are up-and-coming candidates for terahertz (THz) optoelectronic devices, largely owing to their innate material attributes. The significant ZnO LO-phonon energy plays a pivotal role in mitigating thermally induced LO-phonon scattering, potentially significantly elevating the temperature performance of quantum cascade lasers (QCLs). In this work, we calculate the electronic structure and absorption of ZnO/ZnMgO multiple semiconductor quantum wells (MQWs) and the current density–voltage characteristics of nonpolar m-plane ZnO/ZnMgO double-barrier resonant tunnelling diodes (RTDs). Both MQWs and RTDs are considered here as two building blocks of a QCL. We show how the doping, Mg percentage and layer thickness affect the absorption of MQWs at room temperature. We confirm that in the high doping concentrations regime, a full quantum treatment that includes the depolarisation shift effect must be considered, as it shifts mid-infrared absorption peak energy for several tens of meV. Furthermore, we also focus on the performance of RTDs for various parameter changes and conclude that, to maximise the peak-to-valley ratio (PVR), the optimal doping density of the analysed ZnO/Zn88Mg12O double-barrier RTD should be approximately 1018 cm−3, whilst the optimal barrier thickness should be 1.3 nm, with a Mg mole fraction of ~9%. Full article
(This article belongs to the Special Issue Special Edition on Semiconductor Materials and Optics)
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17 pages, 3418 KiB  
Article
Study of the Influence of the Irradiation Flux Density on the Formation of a Defect Structure in AlN in the Case of the Effect of Overlapping of the Heavy Ion Motion Trajectories in the Near-Surface Layer
by Yeugeniy V. Bikhert, Artem L. Kozlovskiy, Anatoli I. Popov and Maxim V. Zdorovets
Materials 2023, 16(15), 5225; https://doi.org/10.3390/ma16155225 - 25 Jul 2023
Cited by 1 | Viewed by 1454
Abstract
The aim of this paper is to test the previously stated hypothesis and several experimental facts about the effect of the ion flux or ion beam current under irradiation with heavy ions on the radiation damage formation in the ceramic near-surface layer and [...] Read more.
The aim of this paper is to test the previously stated hypothesis and several experimental facts about the effect of the ion flux or ion beam current under irradiation with heavy ions on the radiation damage formation in the ceramic near-surface layer and their concentration. The hypothesis is that, when considering the possibilities of using ion irradiation (usually with heavy ions) for radiation damage simulation at a given depth, comparable to neutron irradiation, it is necessary to consider the rate factor for the set of atomic displacements and their accumulation. Using the methods of X-ray diffraction analysis, Raman and UV–Vis spectroscopy, alongside photoluminescence, the mechanisms of defect formation in the damaged layer were studied by varying the current of the Xe23+ ion beam with an energy of 230 MeV. As a result of the experimental data obtained, it was found that, with the ion beam current elevation upon the irradiation of nitride ceramics (AlN) with heavy Xe23+ ions, structural changes have a pronounced dependence on the damage accumulation rate. At the same time, the variation of the ion beam current affects the main mechanisms of defect formation in the near-surface layer. It has been found that at high values of flux ions, the dominant mechanism in damage to the surface layer is the mechanism of the formation of vacancy defects associated with the replacement of nitrogen atoms by oxygen atoms, as well as the formation of ON–VAl complexes. Full article
(This article belongs to the Special Issue Special Edition on Semiconductor Materials and Optics)
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