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Surface Modulation of Semiconductor Quantum Dots for Advanced Optoelectronic Applications

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Optical and Photonic Materials".

Deadline for manuscript submissions: 20 May 2026 | Viewed by 113

Special Issue Editors


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Guest Editor
College of Physics and Optoelectronic Engineering, Harbin Engineering University, Harbin 150001, China
Interests: micro/nanostructured surfaces; surface/interface wettability; photothermal management

E-Mail Website
Guest Editor
College of Physics and Optoelectronic Engineering, Harbin Engineering University, Harbin 150001, China
Interests: quantum dots; perovskite; light-emitting diodes; nanocrystals; ultrafast spectra
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Special Issue Information

Dear Colleagues,

The surface modulation of micro/nanomaterials such as semiconductor quantum dots (QDs) serves as a pivotal strategy to tailor their optoelectronic properties, enabling breakthroughs in device performance and functionality. Based on surface chemistry, ligand exchange, and heterostructural configurations, researchers can precisely manipulate the dynamics, stability, and interfacial interactions of charge carriers, critical factors for applications spanning solar cells, light-emitting diodes (LEDs), photodetectors, and quantum light sources. Recent advancements in surface passivation, core–shell structure, encapsulation, and hybrid architectures have enabled unprecedented control over quantum confinement effects, defect mitigation, and environmental resilience. Nevertheless, challenges persist in achieving the precise modulation and control of long-term operational stability, scalable synthesis with atomic-level precision, and high-performance optoelectronic devices.

This Special Issue seeks to compile cutting-edge research on surface modulation strategies for semiconductor QDs, emphasizing their role in advancing next-generation optoelectronic technologies. We welcome original research articles, reviews, and perspectives that address fundamental insights, innovative methodologies, and practical applications. Topics of interest include, but are not limited to, the following:

  • Surface ligand chemistry and its impact on charge transport and photoluminescence quantum yield;
  • First-principle calculations for the surface design of micro/nanomaterials;
  • Core–shell architectures and graded interface design for enhanced exciton confinement;
  • In situ characterization of surface dynamics under operational conditions;
  • Surface defect passivation techniques for improved stability and reduced non-radiative recombination;
  • Scalable synthesis routes for monodisperse QDs;
  • QDs for flexible and stretchable electronics;
  • Surface plasmon coupling and photon management in QD-based optoelectronic devices;
  • Advanced computational models for predicting surface-mediated optoelectronic behaviors;
  • Novel quantum dot light-emitting materials;
  • Highly efficient QD light-emitting diodes, solar cells, and photodetectors;
  • Challenges in QD surface standardization for industrial-scale manufacturing;
  • Emerging applications in quantum information, bioimaging, and energy harvesting;
  • Regulation of surface wettability in micro/nanostructures and applications;
  • Synergistic modulation of QD surface chemistry and wettability for photothermal performance optimization;
  • Bioinspired micro/nanostructured interfaces for efficient photothermal management;
  • Dynamic wettability surfaces in photothermally responsive devices;
  • Interfacial regulation mechanisms in photothermal catalysis using micro/nanostructures;
  • Surface engineering for flexible/stretchable photothermal devices;
  • Multiscale simulation of micro/nanostructured interfaces and photothermal–wettability coupling mechanisms.

We invite contributions that bridge theoretical, experimental, and translational research to accelerate the development of robust, high-performance QD-based systems.

Dr. Xiaoli Yin
Dr. Chenghao Bi
Guest Editors

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Keywords

  • semiconductor quantum dots
  • optoelectronic devices
  • light-emitting diodes
  • solar cells
  • surface design of micro/nanomaterials
  • novel quantum dots light-emitting materials
  • core-shell architectures and graded interface design

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Published Papers (1 paper)

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Research

13 pages, 1889 KB  
Article
Dimension Tailoring of Quasi-2D Perovskite Films Based on Atmosphere Control Toward Enhanced Amplified Spontaneous Emission
by Zijia Wang, Xuexuan Huang, Zixuan Song, Chiyu Guo, Liang Tao, Shibo Wei, Ke Ren, Yuze Wu, Xuejiao Sun and Chenghao Bi
Materials 2025, 18(19), 4628; https://doi.org/10.3390/ma18194628 - 7 Oct 2025
Abstract
Quasi-two-dimensional (Q2D) perovskite films have garnered significant attention as novel gain media for lasers due to their tunable bandgap, narrow linewidth, and solution processability. Q2D perovskites endowed with intrinsic quantum well structures demonstrate remarkable potential as gain media for cost-effective miniaturized lasers, owing [...] Read more.
Quasi-two-dimensional (Q2D) perovskite films have garnered significant attention as novel gain media for lasers due to their tunable bandgap, narrow linewidth, and solution processability. Q2D perovskites endowed with intrinsic quantum well structures demonstrate remarkable potential as gain media for cost-effective miniaturized lasers, owing to their superior ambient stability and enhanced photon confinement capabilities. However, the mixed-phase distribution within Q2D films constitutes a critical determinant of their optical properties, exhibiting pronounced sensitivity to specific fabrication protocols and processing parameters, including annealing temperature, duration, antisolvent volume, injection timing, and dosing rate. These factors frequently lead to broad phase distribution in Q2D perovskite films, thereby inducing incomplete exciton energy transfer and multiple emission peaks, while simultaneously making the fabrication processes intricate and reducing reproducibility. Here, we report a novel annealing-free and antisolvent-free method for the preparation of Q2D perovskite films fabricated in ambient atmosphere. By constructing a tailored mixed-solvent vapor atmosphere and systematically investigating its regulatory effects on the nucleation and growth processes of film via in situ photoluminescence spectra, we successfully achieved the fabrication of Q2D perovskite films with large n narrow phase distribution characteristics. Due to the reduced content of small n domains, the incomplete energy transfer from small n to large n phases and the carriers’ accumulation in small n can be greatly suppressed, thereby suppressing the trap-assistant nonradiative recombination and Auger recombination. Ultimately, the Q2D perovskite film showed a single emission peak at 519 nm with the narrow full width at half maximum (FWHM) of 21.5 nm and high photoluminescence quantum yield (PLQY) of 83%. And based on the optimized Q2D film, we achieved an amplified spontaneous emission (ASE) with a low threshold of 29 μJ·cm−2, which was approximately 60% lower than the 69 μJ·cm−2 of the control film. Full article
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