Advances in Nanomaterials and Nanoscale Semiconductor Applications
A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Advanced Nanomaterials and Nanotechnology".
Deadline for manuscript submissions: closed (30 December 2023) | Viewed by 679
Special Issue Editors
Interests: nanomaterials; nano semiconductor devices; nanoelectronics
Special Issue Information
Dear Colleagues,
Due to the limited conductivity of Silicon material, alternating materials are used for nanoscale semiconductor devices to enhance the device performance, such as Germanium, III-V compound semiconductors, carbon, and graphene, etc. The scaling of bulk silicon MOSFET in nanoscale is also facing problems from Short Channel Effects, high leakage currents, and power dissipation. To overcome these challenges, alternating semiconductor device structures are required for nanoscale semiconductor circuits and system design. Nanoscale semiconductor devices such as double-gate MOSFET, FinFET, nanowires, CNTFET, TFET, FeFET, Gate-All-Around (GAA), HEMT, and spin-based devices are proposed and available in the literature.
This Special Issue will cover promising and novel research trends in materials and devices and the exploration of their applications in energy storage, energy conversion, and sensor design. The topics of interest include, but are not limited to, the following:
- Nanomaterials
- Nanoscale semiconductor devices
- Novel materials for solar cells
- Nanoscale devices for energy conversion
- FinFET and its applications
- TFET for sensor design
- CNTFET for memory design
- HEMT and its applications
- FeFET
- Gate-All-Around structures
- Nanowire and nanoribbons
- Nanodevice-based sensor applications
- Nano biomaterials for biomedical application
Dr. Balwinder Raj
Dr. Suman Lata Tripathi
Guest Editors
Manuscript Submission Information
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Keywords
- nanomaterials
- nanodevices
- energy conversion
- novel materials for solar cells
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