Editor’s Choice Articles

Editor’s Choice articles are based on recommendations by the scientific editors of MDPI journals from around the world. Editors select a small number of articles recently published in the journal that they believe will be particularly interesting to readers, or important in the respective research area. The aim is to provide a snapshot of some of the most exciting work published in the various research areas of the journal.

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35 pages, 9979 KB  
Review
Applications of MXenes in Neuromorphic Computing and Memristors: From Material Synthesis and Physical Mechanisms to Integrated Sensing, Memory, and Computation
by Yifeng Fu and Jianguang Xu
J. Low Power Electron. Appl. 2026, 16(1), 8; https://doi.org/10.3390/jlpea16010008 - 25 Feb 2026
Viewed by 2200
Abstract
In the post-Moore’s Law era, conventional Von Neumann architectures face critical limitations, such as the “memory wall” and excessive power consumption, particularly when processing unstructured data. Neuromorphic computing, inspired by the human brain, offers a promising solution through parallel processing and adaptive learning. [...] Read more.
In the post-Moore’s Law era, conventional Von Neumann architectures face critical limitations, such as the “memory wall” and excessive power consumption, particularly when processing unstructured data. Neuromorphic computing, inspired by the human brain, offers a promising solution through parallel processing and adaptive learning. Among the candidates for artificial synapses, memristors based on two-dimensional MXenes (specifically Ti3C2Tx) have attracted significant attention due to their unique layered structure, high metallic conductivity, and tunable physicochemical properties. This review provides a comprehensive analysis of MXene-based memristors, from material synthesis to system-level applications. We examine how different synthesis strategies, including etching methods, directly influence device performance and elucidate the underlying resistive switching mechanisms driven by ion migration, valence change, and interfacial processes. Furthermore, the review demonstrates the efficacy of MXenes in emulating biological synaptic functions—such as spike-timing-dependent plasticity (STDP) and long-term potentiation/depression (LTP/LTD)—and their application in tasks like handwritten digit recognition. Finally, we highlight emerging frontiers in flexible electronics and in-sensor computing, offering insights into the future trajectory of integrated sensing, memory, and computation. Full article
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23 pages, 2239 KB  
Article
SparseDroop: Hardware–Software Co-Design for Mitigating Voltage Droop in DNN Accelerators
by Arnab Raha, Shamik Kundu, Arghadip Das, Soumendu Kumar Ghosh and Deepak A. Mathaikutty
J. Low Power Electron. Appl. 2026, 16(1), 2; https://doi.org/10.3390/jlpea16010002 - 23 Dec 2025
Viewed by 2229
Abstract
Modern deep neural network (DNN) accelerators must sustain high throughput while avoiding performance degradation from supply voltage (VDD) droop, which occurs when large arrays of multiply–accumulate (MAC) units switch concurrently and induce high peak current (ICCmax) [...] Read more.
Modern deep neural network (DNN) accelerators must sustain high throughput while avoiding performance degradation from supply voltage (VDD) droop, which occurs when large arrays of multiply–accumulate (MAC) units switch concurrently and induce high peak current (ICCmax) transients on the power delivery network (PDN). In this work, we focus on ASIC-class DNN accelerators with tightly synchronized MAC arrays rather than FPGA-based implementations, where such cycle-aligned switching is most pronounced. Conventional guardbanding and reactive countermeasures (e.g., throttling, clock stretching, or emergency DVFS) either waste energy or incur non-trivial throughput penalties. We propose SparseDroop, a unified hardware-conscious framework that proactively shapes instantaneous current demand to mitigate droop without reducing sustained computing rate. SparseDroop comprises two complementary techniques. (1) SparseStagger, a lightweight hardware-friendly droop scheduler that exploits the inherent unstructured sparsity already present in the weights and activations—it does not introduce any additional sparsification. SparseStagger dynamically inspects the zero patterns mapped to each processing element (PE) column and staggers MAC start times within a column so that high-activity bursts are temporally interleaved. This fine-grain reordering smooths ICC trajectories, lowers the probability and depth of transient VDD dips, and preserves cycle-level alignment at tile/row boundaries—thereby maintaining no throughput loss and negligible control overhead. (2) SparseBlock, an architecture-aware, block-wise-structured sparsity induction method that intentionally introduces additional sparsity aligned with the accelerator’s dataflow. By co-designing block layout with the dataflow, SparseBlock reduces the likelihood that all PEs in a column become simultaneously active, directly constraining ICCmax and peak dynamic power on the PDN. Together, SparseStagger’s opportunistic staggering (from existing unstructured weight zeros) and SparseBlock’s structured, layout-aware sparsity induction (added to prevent peak-power excursions) deliver a scalable, low-overhead solution that improves voltage stability, energy efficiency, and robustness, integrates cleanly with the accelerator dataflow, and preserves model accuracy with modest retraining or fine-tuning. Full article
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10 pages, 2362 KB  
Article
Full-Bridge DC-DC Converter with Synchronous Rectification Based on GaN Transistors
by Xin Wang, Qingsong Zhao, Zenglong Zhao and Fanyi Meng
J. Low Power Electron. Appl. 2025, 15(2), 25; https://doi.org/10.3390/jlpea15020025 - 22 Apr 2025
Cited by 7 | Viewed by 6593
Abstract
This study presents a hard-switching full-bridge DC-DC converter with synchronous rectification based on Gallium Nitride (GaN) transistors to evaluate the advantages of GaN devices in power supplies. In comparison to traditional silicon-based devices, GaN transistors are utilized in both the primary and secondary [...] Read more.
This study presents a hard-switching full-bridge DC-DC converter with synchronous rectification based on Gallium Nitride (GaN) transistors to evaluate the advantages of GaN devices in power supplies. In comparison to traditional silicon-based devices, GaN transistors are utilized in both the primary and secondary stages of the converter, exploiting GaN’s lower on-resistance to enhance performance. The converter operates at a switching frequency of 300 kHz, with an input voltage range of 36 V to 75 V, delivering an output of 28 V/42 A. Experimental results show that the GaN-based converter achieves an output power of 1176 W within standard half-brick package dimensions. The measured peak efficiency is 97.1%, and the power density reaches 430 W/in3. These findings demonstrate that GaN-based converters offer superior efficiency and power density compared to conventional silicon-based designs, making them highly suitable for aerospace, automotive, and communication power supplies. Full article
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27 pages, 6837 KB  
Review
Prospective Review of Magneto-Resistive Current Sensors with High Sensitivity and Wide Temperature Range
by Zicai Yang and Yanfeng Jiang
J. Low Power Electron. Appl. 2024, 14(3), 43; https://doi.org/10.3390/jlpea14030043 - 19 Aug 2024
Cited by 20 | Viewed by 7133
Abstract
Current sensors play a vital role in power systems, industrial production, smart devices and other fields, which can provide critical current information in the systems for the safety and efficiency managements. The development of magneto-resistive effect technology in recent years expedites the research [...] Read more.
Current sensors play a vital role in power systems, industrial production, smart devices and other fields, which can provide critical current information in the systems for the safety and efficiency managements. The development of magneto-resistive effect technology in recent years expedites the research process of the current sensors in industrial-level applications. In the review, starting with the development status of the current sensors, the physical mechanisms of the relevant magneto-resistive effects and their early applications as the current sensors are introduced. Several design methods of the magnetic sensors, as well as their merits and shortcomings, are summarized. The performance parameters of the magnetic sensors based on AMR, GMR, TMR and Hall effects are reviewed, including the front-end amplification circuits and conditioning circuits. The industrial applications of the current sensors in the fields of automobiles and photovoltaic inverters are enumerated. The criterions for the current sensors to be used in different scenarios are discussed. In the future, it is imperative to continue the research and development of novel current sensors in order to satisfy the increasingly stringent demands of the industrial developments, in terms of the performance, cost and reliability of the current sensors. Full article
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17 pages, 1008 KB  
Article
Design and Assessment of Hybrid MTJ/CMOS Circuits for In-Memory-Computation
by Prashanth Barla, Hemalatha Shivarama, Ganesan Deepa and Ujjwal Ujjwal
J. Low Power Electron. Appl. 2024, 14(1), 3; https://doi.org/10.3390/jlpea14010003 - 6 Jan 2024
Cited by 9 | Viewed by 5642
Abstract
Hybrid magnetic tunnel junction/complementary metal oxide semiconductor (MTJ/CMOS) circuits based on in-memory-computation (IMC) architecture is considered as the next-generation candidate for the digital integrated circuits. However, the energy consumption during the MTJ write process is a matter of concern in these hybrid circuits. [...] Read more.
Hybrid magnetic tunnel junction/complementary metal oxide semiconductor (MTJ/CMOS) circuits based on in-memory-computation (IMC) architecture is considered as the next-generation candidate for the digital integrated circuits. However, the energy consumption during the MTJ write process is a matter of concern in these hybrid circuits. In this regard, we have developed a novel write circuit for the contemporary three-terminal perpendicular-MTJs that works on the voltage-gated spin orbit torque (VG+SOT) switching mechanism to store the information in hybrid circuits for IMC architecture. Investigation of the novel write circuit reveals a remarkable reduction in the total energy consumption (and energy delay product) of 92.59% (95.81) and 92.28% (42.03%) than the conventional spin transfer torque (STT) and spin-Hall effect assisted STT (SHE+STT) write circuits, respectively. Further, we have developed all the hybrid logic gates followed by nonvolatile full adders (NV-FAs) using VG+SOT, STT, and SHE+STT MTJs. Simulation results show that with the VG+SOT NOR-OR, NAND-AND, XNOR-XOR, and NV-FA circuits, the reduction in the total power dissipation is 5.35% (4.27%), 5.62% (3.2%), 3.51% (2.02%), and 4.46% (2.93%) compared to STT (SHE+STT) MTJs respectively. Full article
(This article belongs to the Special Issue Recent Advances in Spintronics)
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