Special Issue "Spin Optoelectronics"

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Microelectronics and Optoelectronics".

Deadline for manuscript submissions: closed (30 September 2016).

Special Issue Editors

Guest Editor
Prof. Riccardo Bertacco

Department of Physics, Politecnico di Milano, and IFN-CNR, c/o Politecnico di Milano, via Colombo 81, 20133, Milano, Italy
Website | E-Mail
Interests: nanomagnetism; spintronics; nanobiotechnology
Guest Editor
Prof. Matteo Cantoni

Department of Physics, Politecnico di Milano, Milano via G. Colombo 81, 20133 Milano, Italy
Website | E-Mail
Interests: optical spin orientation; photodetectors; semiconductor spintronics; magnetoelectric coupling; antiferromagnetic spintronics; spin orbitronics
Guest Editor
Dr. Christian Rinaldi

Department of Physics, Politecnico di Milano, and IFN-CNR, c/o Politecnico di Milano, via Colombo 81, 20133, Milano, Italy
Website | E-Mail
Interests: Spintronics, spin orbitronics; semiconductor spintronics; ferroelectrics; antiferromagnetic spintronics; optical spin orientation; photodetectors

Special Issue Information

Dear Colleagues,

Spin-optoelectronics is a novel research area at the crossroads between the fundamental physics of quantum-mechanical spin, optoelectronics, and nanotechnology. Spin- and light-polarization effects in nanostructures, possibly involving the confinement of both charges and photons, are very appealing for the implementation of innovative optoelectronic systems. In particular, the coupling between the photon helicity and the spin angular momentum of electrons can be used for the magnetically controlled generation and detection of circularly polarized light, to be employed in systems exploiting the additional degree of freedom connected to the light polarization.

Multiple-state logic and novel communication protocols can be implemented based on the capability of manipulating and detecting the different polarization states of light pulses in integrated platforms without the use of external optical elements. In this framework, novel devices such as optical interconnects, optical switches, and modulators can be realized with reconfigurable functionality depending on the configuration of the magnetic electrodes embedded in the emitters and detectors of the polarized light. The information, ultimately carried out by the spin of electrons and photons, can be encoded in the confined spin state, manipulated at the nanoscale and redelivered in the form of polarized photons. Major future applications of such a novel approach comprise the areas of quantum computing and data-transmission cryptography based on the coherent interaction between qubits via photon-polarization effects.

We invite researchers to submit cutting-edge research articles describing and assessing spin-optoelectronic devices and related physics, as well as experiments, numerical methods and models, in order to provide a complete overview of the research activity in this fascinating multi-disciplinary field, at the crossroad between different disciplines such magnetism, spintronics, electronics and optics.

Potential topics include, but are not limited to:

  • Optical spin orientation
  • Spin photodiodes
  • Spin LEDs
  • Reconfigurable optoelectronic devices
  • Semiconductor spintronics

Prof. R. Bertacco
Prof. M. Cantoni
Dr. C. Rinaldi
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Published Papers (5 papers)

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Research

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Open AccessArticle
High-Speed Non-Volatile Optical Memory: Achievements and Challenges
Received: 31 October 2016 / Revised: 22 December 2016 / Accepted: 28 December 2016 / Published: 10 January 2017
Cited by 1 | PDF Full-text (2213 KB) | HTML Full-text | XML Full-text
Abstract
We have proposed, fabricated, and studied a new design of a high-speed optical non-volatile memory. The recoding mechanism of the proposed memory utilizes a magnetization reversal of a nanomagnet by a spin-polarized photocurrent. It was shown experimentally that the operational speed of this [...] Read more.
We have proposed, fabricated, and studied a new design of a high-speed optical non-volatile memory. The recoding mechanism of the proposed memory utilizes a magnetization reversal of a nanomagnet by a spin-polarized photocurrent. It was shown experimentally that the operational speed of this memory may be extremely fast above 1 TBit/s. The challenges to realize both a high-speed recording and a high-speed reading are discussed. The memory is compact, integratable, and compatible with present semiconductor technology. If realized, it will advance data processing and computing technology towards a faster operation speed. Full article
(This article belongs to the Special Issue Spin Optoelectronics)
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Open AccessArticle
Stability Analysis of Quantum-Dot Spin-VCSELs
Electronics 2016, 5(4), 83; https://doi.org/10.3390/electronics5040083
Received: 20 October 2016 / Revised: 15 November 2016 / Accepted: 18 November 2016 / Published: 23 November 2016
Cited by 7 | PDF Full-text (1143 KB) | HTML Full-text | XML Full-text
Abstract
Spin-polarized vertical-cavity surface-emitting lasers (spin-VCSELs) and vertical external-cavity surface-emitting lasers (spin-VECSELs) are of interest since their output polarization can be manipulated by spin-selective pumping, either optical or electrical. These devices, using quantum dot (QD) material for the active region, have shown instability (periodic [...] Read more.
Spin-polarized vertical-cavity surface-emitting lasers (spin-VCSELs) and vertical external-cavity surface-emitting lasers (spin-VECSELs) are of interest since their output polarization can be manipulated by spin-selective pumping, either optical or electrical. These devices, using quantum dot (QD) material for the active region, have shown instability (periodic oscillations) and polarization switching in previous theoretical simulations based on a rate equation model. It has been recognized that the polarization switching occurs between two possible sets of solutions, termed here in-phase and out-of-phase. The present contribution seeks to give enhanced understanding of these behaviors by applying a stability analysis to the system of equations used for such simulations. The results indicate that the choice of in-phase and out-of-phase solutions that appear in a time-dependent simulation is determined by the condition that the corresponding steady-state solutions are stable against small perturbations. The stability analysis is shown to be a valuable theoretical tool for future study of spin-V(E)SELs in the context of understanding and guiding future experimental research. Full article
(This article belongs to the Special Issue Spin Optoelectronics)
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Open AccessArticle
Optical Orientation and Inverse Spin Hall Effect as Effective Tools to Investigate Spin-Dependent Diffusion
Electronics 2016, 5(4), 80; https://doi.org/10.3390/electronics5040080
Received: 1 October 2016 / Revised: 15 November 2016 / Accepted: 17 November 2016 / Published: 22 November 2016
Cited by 1 | PDF Full-text (352 KB) | HTML Full-text | XML Full-text
Abstract
In this work we address optical orientation, a process consisting in the excitation of spin polarized electrons across the gap of a semiconductor. We show that the combination of optical orientation with spin-dependent scattering leading to the inverse spin-Hall effect, i.e., to the [...] Read more.
In this work we address optical orientation, a process consisting in the excitation of spin polarized electrons across the gap of a semiconductor. We show that the combination of optical orientation with spin-dependent scattering leading to the inverse spin-Hall effect, i.e., to the conversion of a spin current into an electrical signal, represents a powerful tool to generate and detect spin currents in solids. We consider a few examples where these two phenomena together allow addressing the spin-dependent transport properties across homogeneous samples or metal/semiconductor Schottky junctions. Full article
(This article belongs to the Special Issue Spin Optoelectronics)
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Open AccessArticle
Two Micron Pixel Pitch Active Matrix Spatial Light Modulator Driven by Spin Transfer Switching
Electronics 2016, 5(3), 55; https://doi.org/10.3390/electronics5030055
Received: 28 June 2016 / Revised: 16 August 2016 / Accepted: 1 September 2016 / Published: 9 September 2016
Cited by 8 | PDF Full-text (3868 KB) | HTML Full-text | XML Full-text
Abstract
We have developed an active matrix-addressed magneto-optical spatial light modulator driven by spin-transfer switching (spin-SLM) which has a 100 × 100 array pixel layout with a 2 µm pixel pitch. It has pixel-selection-transistors and logic circuits which convert serial data into parallel data [...] Read more.
We have developed an active matrix-addressed magneto-optical spatial light modulator driven by spin-transfer switching (spin-SLM) which has a 100 × 100 array pixel layout with a 2 µm pixel pitch. It has pixel-selection-transistors and logic circuits which convert serial data into parallel data to reduce input terminals. We have confirmed successful magnetization switching of each pixel by injecting a pulse current generated from the logic circuit, and its optical display capability by showing digital characters. Full article
(This article belongs to the Special Issue Spin Optoelectronics)
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Review

Jump to: Research

Open AccessFeature PaperReview
Progress towards Spin-Based Light Emission in Group IV Semiconductors
Electronics 2017, 6(1), 19; https://doi.org/10.3390/electronics6010019
Received: 21 December 2016 / Revised: 27 January 2017 / Accepted: 20 February 2017 / Published: 7 March 2017
Cited by 7 | PDF Full-text (1445 KB) | HTML Full-text | XML Full-text
Abstract
Spin-optoelectronics is an emerging technology in which novel and advanced functionalities are enabled by the synergetic integration of magnetic, optical and electronic properties onto semiconductor-based devices. This article reviews the possible implementation and convergence of spintronics and photonics concepts on group IV semiconductors: [...] Read more.
Spin-optoelectronics is an emerging technology in which novel and advanced functionalities are enabled by the synergetic integration of magnetic, optical and electronic properties onto semiconductor-based devices. This article reviews the possible implementation and convergence of spintronics and photonics concepts on group IV semiconductors: the core materials of mainstream microelectronics. In particular, we describe the rapid pace of progress in the achievement of lasing action in the notable case of Ge-based heterostructures and devote special attention to the pivotal role played by optical investigations in advancing the understanding of the rich spin physics of group IV materials. Finally, we scrutinize recent developments towards the monolithic integration on Si of a new class of spin-based light emitting devices having prospects for applications in fields such as cryptography and interconnects. Full article
(This article belongs to the Special Issue Spin Optoelectronics)
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