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Optical Orientation and Inverse Spin Hall Effect as Effective Tools to Investigate Spin-Dependent Diffusion

Dipartimento di Fisica and LNESS, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano, Italy
Istituto di Fotonica e Nanotecnologie - Centro Nazionale delle Ricerche, LNESS, via Anzani 42, 22100 Como, Italy
Université Grenoble Alpes, Institut Nanosciences et Cryogénie (INAC) - Spintec, F-38000 Grenoble, France
Commissariat à l’énergie atomique et aux énergies alternatives (CEA), Institut Nanosciences et Cryogénie (INAC) - Spintec, F-38054 Grenoble, France
Author to whom correspondence should be addressed.
Academic Editors: Matteo Cantoni, Riccardo Bertacco and Christian Rinaldi
Electronics 2016, 5(4), 80;
Received: 1 October 2016 / Revised: 15 November 2016 / Accepted: 17 November 2016 / Published: 22 November 2016
(This article belongs to the Special Issue Spin Optoelectronics)
PDF [352 KB, uploaded 22 November 2016]


In this work we address optical orientation, a process consisting in the excitation of spin polarized electrons across the gap of a semiconductor. We show that the combination of optical orientation with spin-dependent scattering leading to the inverse spin-Hall effect, i.e., to the conversion of a spin current into an electrical signal, represents a powerful tool to generate and detect spin currents in solids. We consider a few examples where these two phenomena together allow addressing the spin-dependent transport properties across homogeneous samples or metal/semiconductor Schottky junctions. View Full-Text
Keywords: optical orientation; spin current; inverse spin Hall effect optical orientation; spin current; inverse spin Hall effect

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Finazzi, M.; Bottegoni, F.; Zucchetti, C.; Bollani, M.; Ballabio, A.; Frigerio, J.; Rortais, F.; Vergnaud, C.; Marty, A.; Jamet, M.; Isella, G.; Ciccacci, F. Optical Orientation and Inverse Spin Hall Effect as Effective Tools to Investigate Spin-Dependent Diffusion. Electronics 2016, 5, 80.

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