Advanced Non-Volatile Memory Devices and Systems

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Microelectronics".

Deadline for manuscript submissions: 15 October 2024 | Viewed by 484

Special Issue Editors


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Guest Editor
Institut Matériaux Microélectronique et Nanosciences de Provence (IM2NP), CNRS, Aix-Marseille University, 13453 Marseille, France
Interests: non-volatile memories; MRAM; TCAD simulation; reliability; security
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Guest Editor
Institut Matériaux Microélectronique et Nanosciences de Provence (IM2NP), CNRS, Aix-Marseille University, 13453 Marseille, France
Interests: non-volatile memories; PCM; OxRAM; electrical characterization; reliability; modeling

Special Issue Information

Dear Colleagues,

Advanced non-volatile memory devices and systems have had a profound impact on the field of data storage and computing, revolutionizing the way we store, access, and manage information. These technologies have significantly improved data transfer speeds, energy efficiency, and overall performance in various electronic devices.

One major impact of advanced non-volatile memory devices is their role in modern storage solutions. Traditional hard disk drives (HDDs) have been gradually replaced by solid-state drives (SSDs) based on technologies like NAND Flash and 3D XPoint, offering much faster read and write speeds, reduced power consumption, and enhanced reliability.

Furthermore, non-volatile memory has become an essential component in mobile devices, such as smartphones and tablets. These devices require fast and reliable memory to store and access data promptly, enabling seamless user experiences. Non-volatile memory also contributes to the longevity of data in case of power interruptions, safeguarding critical information.

In the realm of data centers and cloud computing, advanced non-volatile memory technologies have played a crucial role in enhancing data storage and retrieval efficiency. The rapid adoption of solid-state drives in data centers has led to reduced latency and improved data access times, resulting in better performance for cloud-based services and applications.

Another significant impact is in the Internet of Things (IoT) domain. Non-volatile memory provides low-power and durable storage solutions for the vast amounts of data generated by IoT devices, enabling edge computing capabilities and real-time data analysis without relying heavily on cloud services.

Furthermore, advanced non-volatile memory devices have enabled the development of novel computing architectures, such as neuromorphic computing and in-memory computing. These architectures leverage the unique properties of non-volatile memory to perform specific tasks efficiently, such as pattern recognition and associative memory tasks.

In conclusion, this Special Issue is dedicated to advanced non-volatile memory devices and systems.

Dr. Jérémy Postel-Pellerin
Dr. Vincenzo Della Marca
Guest Editors

Manuscript Submission Information

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Keywords

  • non-volatile memories
  • OxRAM
  • MRAM
  • FeRAM
  • PCM
  • Flash
  • reliability
  • architecture
  • circuit design

Published Papers (1 paper)

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Research

16 pages, 4294 KiB  
Article
Evaluation of a Simplified Modeling Approach for SEE Cross-Section Prediction: A Case Study of SEU on 6T SRAM Cells
by Cleiton M. Marques, Frédéric Wrobel, Ygor Q. Aguiar, Alain Michez, Frédéric Saigné, Jérôme Boch, Luigi Dilillo and Rubén García Alía
Electronics 2024, 13(10), 1954; https://doi.org/10.3390/electronics13101954 - 16 May 2024
Viewed by 284
Abstract
Electrical models play a crucial role in assessing the radiation sensitivity of devices. However, since they are usually not provided for end users, it is essential to have alternative modeling approaches to optimize circuit design before irradiation tests, and to support the understanding [...] Read more.
Electrical models play a crucial role in assessing the radiation sensitivity of devices. However, since they are usually not provided for end users, it is essential to have alternative modeling approaches to optimize circuit design before irradiation tests, and to support the understanding of post-irradiation data. This work proposes a novel simplified methodology to evaluate the single-event effects (SEEs) cross-section. To validate the proposed approach, we consider the 6T SRAM cell a case study in four technological nodes. The modeling considers layout features and the doping profile, presenting ways to estimate unknown parameters. The accuracy and limitations are determined by comparing our simulations with actual experimental data. The results demonstrated a strong correlation with irradiation data, without requiring any fitting of the simulation results or access to process design kit (PDK) data. This proves that our approach is a reliable method for calculating the single-event upset (SEU) cross-section for heavy-ion irradiation. Full article
(This article belongs to the Special Issue Advanced Non-Volatile Memory Devices and Systems)
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