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Electronics
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High Carrier Mobility Devices Technology and Applications
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High Carrier Mobility Devices Technology and Applications

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Microelectronics".

Deadline for manuscript submissions: 15 August 2024 | Viewed by 1691

Special Issue Editors

Prof. Dr. Yahya M. Meziani

E-Mail Website
Guest Editor
Department of Applied Physics, Salamanca University, 37008 Salamanca, Spain
Interests: terahertz technology; sensors; field effect transistor; electronic devices for terahertz detection and emission; plasmons; CMOS; semiconductor physics; 2D material; graphene based FET; THz-TDS
Prof. Dr. Jesús Enrique Velázquez-Pérez

E-Mail Website
Guest Editor
Department of Applied Physics, Salamanca University, 37008 Salamanca, Spain
Interests: Monte Carlo simulation; TCAD; terahertz technology; sensors; field effect transistor; electronic devices for terahertz detection and emission; plasmons; CMOS; semiconductor physics; 2D material; graphene based FET; THz-TDS; HEMT

Special Issue Information

Dear Colleagues,

High speed and high carrier mobility are key parameters for the development of the new era of electronic devices toward different fields such as telecommunication (6G), high-speed electronics, modulation, mixing, etc. Great progress has been made in the development of CMOS (FINFETs, SOI) and III–V materials. An increase in the cut-off frequency from 50 to 350 GHz was obtained when moving from the 130 to the 22 nm node. Nevertheless, challenges in the fabrication process arose in the 16 and 10 nm technology nodes, and more are expected in the 3 nm node. There are also new emerging two-dimensional materials (2D material) that show high carrier mobility, tunable band gap, and ultra-broad band optical absorption and response, which make these materials interesting for applications in Terahertz generation, detectors, modulators, etc. The first exfoliated graphene sheet was obtained in 2004 by Profs. Geim and Novoslov (Nobel Laureate in 2010), and since then, about 5619 layered compounds (1825 of which are easy to fabricate) have been developed and are under intensive investigation. The goal of this Special Issue is to present new advances in the development of new devices for ultra-high frequency operations (from the microwave up to the terahertz range) from both technologies. The issue addresses the fabrication process challenges, the simulation, and their characterization for the frequency range. The use of those devices for practical applications such as communication, inspection, amplification, and sensing is of great importance.

The scope of this Special Issue is to highlight research on new devices based on Silicon CMOS, III–V materials, and new 2D materials and their uses for applications in the frequency range from microwaves up to the terahertz. The purpose is to investigate the properties of those materials toward high-speed and high-mobility devices for practical application in security, communication, detection, and generation of electromagnetic radiation. The aim is to introduce new ideas to the research of new materials and its development for ultra-high frequency applications, a very hot topic in research today.

Prof. Dr. Yahya M. Meziani
Prof. Dr. Jesús Enrique Velázquez-Pérez
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • high carrier mobility
  • field effect transistors
  • terahertz
  • telecommunications
  • 6G
  • optoelectronic
  • plasmonic

Published Papers (2 papers)

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16 pages, 6076 KiB  
Article
Full-Custom 90 nm CNTFET Process Design Kit: Characterization, Modeling, and Implementation
by Liming Chen, Yuyan Zhang, Zhifeng Chen, Jiming Chen, Huangwei Chen, Jianhua Jiang and Chengying Chen
Electronics 2024, 13(3), 605; https://doi.org/10.3390/electronics13030605 - 01 Feb 2024
Viewed by 749
Abstract
As the semiconductor industry enters the post-Moore era, the carbon nanotube field-effect transistor (CNTFET) has become a powerful substitute for silicon-based transistors beyond 5 nm process nodes due to its high mobility, low power consumption, and ultra-thin-body electrical advantages. Carbon-based transistor technology has [...] Read more.
As the semiconductor industry enters the post-Moore era, the carbon nanotube field-effect transistor (CNTFET) has become a powerful substitute for silicon-based transistors beyond 5 nm process nodes due to its high mobility, low power consumption, and ultra-thin-body electrical advantages. Carbon-based transistor technology has made significant progress in device manufacture and preparation, but carbon-based process design kits (PDKs) that meet the standards of commercial design tools are still an important bottleneck hindering the development of carbon-based integrated circuits. For the first time, a complete full-custom 90 nm CNTFET PDK is proposed in this paper, which includes Pcells for transistors, resistors, and capacitors; a compact model; DRC/LVS/PEX rules; and a standard cell and timing library. It can support the entire design flow of analog, digital, and mixed-signal carbon-based integrated circuits. To achieve an accurate compact model, the back-gate effect of CNTFETs and the influence of gate/drain voltage on transport probability are analyzed. Then the theoretical formulas for mobility and channel current are established. The comparison of the simulation and test results of CNTFET characteristics proves the accuracy of the compact model. Using this PDK, combined with standard IC design tools and design flow, the circuit and layout of an operational amplifier, SRAM, and 8-bit counter are completed. The simulation results verify the correctness and effectiveness of the PDK, laying a solid foundation for the large-scale industrialization of carbon-based integrated circuits. Full article
(This article belongs to the Special Issue High Carrier Mobility Devices Technology and Applications)
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19 pages, 3886 KiB  
Article
Investigation of Nano-Heat-Transfer Variability of AlGaN/GaN-Heterostructure-Based High-Electron-Mobility Transistors
by Haikel Mzoughi, Faouzi Nasri, Maha Almoneef, Sonia Soltani, Mohamed Mbarek and Amenallah Guizani
Electronics 2024, 13(1), 164; https://doi.org/10.3390/electronics13010164 - 29 Dec 2023
Viewed by 627
Abstract
The aim of this work is to propose an electrothermal model for predicting the electron mobility, the effective thermal conductivity, and the operating temperature of AlGaN/GaN HEMT devices. The suggested model comprises an enhanced ballistic-diffusive model (BDE) coupled with a drift-diffusion model (D-D). [...] Read more.
The aim of this work is to propose an electrothermal model for predicting the electron mobility, the effective thermal conductivity, and the operating temperature of AlGaN/GaN HEMT devices. The suggested model comprises an enhanced ballistic-diffusive model (BDE) coupled with a drift-diffusion model (D-D). Furthermore, the given model considers total electron mobility, which depends on mobility degradation caused by phonon interactions, surface imperfections, and carrier mobility inside the bulk GaN material. The model is validated based on available experimental and numerical results, and good concordance is observed. It is found that the degradation of the drain current is due to electron mobility and effective thermal conductivity degradation. The output characteristic’s degradation due to changing device temperature is analyzed. We demonstrate that for gate biases of −1 V, 0 V, and 1 V, operating temperatures of 390 K, 470 K, and 570 K are obtained when the drain currents are 0.1 A, 0.24 A, and 0.38 A, respectively. Furthermore, we demonstrate that the temperature is maximal in the active region. The temporal temperature evolution presents the same trends with the same amplitude compared to the experimental data, and the error does not exceed 5%. Full article
(This article belongs to the Special Issue High Carrier Mobility Devices Technology and Applications)
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