Metal–Semiconductor Photodetector

Dear Colleagues,

Photodetectors have attracted increasing attention in the past few decades, primarily due to their wide applications in various purposes, such as image sensing, optical communication, biomedical imaging, and motion detection. Metal–semiconductor photodetectors have attracted much attention due to their figures of merit, including fabrication simplicity and direct compatibility with modern high-speed integrated circuitry. Recently, efforts have been made to improve the responsivity, detectivity, and other key parameters of photodetectors.

To bring additional attention to this area of research, this Special Issue highlights progress reports, reviews, and original research articles on “Metal–Semiconductor Photodetectors”; potential topics include, but are not limited to:

• Manufacturing process for metal–semiconductor photodetectors.
• Metallic nanostructures in metal–semiconductor photodetectors.
• Carrier transport in metal–semiconductor photodetectors.
• Internal gain mechanism in metal–semiconductor photodetectors.
• Defects and dislocations near metal–semiconductor interfaces and their influence on photodetection properties.

Prof. Dr. Liming Wang
Prof. Dr. Huiyong Hu
Guest Editors

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